The invention relates to the technical field of
semiconductor processing, in particular to a novel
chip PAD
metal layer removing method, which comprises the following process steps: S1, preparing a
chip PAD top layer
metal corrosion solution; s2, heating the solution, completely immersing the sample
chip, and soaking at a constant temperature to remove top
metal of a chip PAD; s3, heating the solution, and completely immersing the sample chip at a constant temperature for 25 minutes; s4, taking out the sample chip, cleaning the sample chip in
purified water, and
drying the sample chip; s5, preparing a chip PAD secondary top layer metal
corrosion solution; s6, the chip PAD secondary top layer metal
corrosion solution is heated, the sample chip is completely immersed at the constant temperature for 12 hours, and chip PAD secondary top layer metal is removed; s7, the sample chip is taken out and cleaned; and S8, taking out the sample chip and
drying the sample chip to complete the removal of the PAD metal layer of the chip. According to the novel chip PAD metal layer removing method, chip layer removing can be achieved without expensive special equipment, the whole process is easy and convenient to operate, and the consumed time is short.