A process monitoring technique for
transistor-based devices is described. The technique utilizes an oscillator-based sensor and operates in two phases: calibration and measurement. During calibration, the oscillator is supplied with a calibration current, and the resulting frequency is measured. A correction factor is calculated by dividing the measured frequency by the calibration current. In the measurement phase, the oscillator is supplied with current from the
device under test, such as a
memory cell or other
transistor-based structure. The frequency produced is measured and divided by the correction factor to determine the current from the device. This approach yields a current value independent of parasitic resistances and capacitances in the oscillator. The technique enables accurate
process variation monitoring with little modification to existing circuit structures and is applicable to various
transistor-based devices, including SRAM cells, logic circuits, and analog circuits.