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Low-power-consumption charge pump for field effect power tube grid drive

A field effect power transistor and gate drive technology, which is used in high-efficiency power electronic conversion, conversion equipment without intermediate conversion to AC, climate sustainability, etc.

Inactive Publication Date: 2013-07-10
苏州硅智源微电子有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In many applications, the power dissipated in this type of circuit is usually the power dissipated by the load or the FET switch itself

Method used

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  • Low-power-consumption charge pump for field effect power tube grid drive
  • Low-power-consumption charge pump for field effect power tube grid drive
  • Low-power-consumption charge pump for field effect power tube grid drive

Examples

Experimental program
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Effect test

Embodiment Construction

[0013] figure 1 is a block diagram of the charge pump circuit 10 of the present invention.

[0014] Such as figure 1 As shown, the charge pump driving circuit 10 drives the gate 5 a of the field effect transistor 5 , which serves as an impedance high-side switch to provide power for the connection between the load 4 and the source 5 b of the field effect transistor 5 .

[0015] The charge pump circuit 10 includes a voltage multiplier circuit 15, which controls a voltage to be applied to the base of the field effect transistor 5 and turns the transistor on and off. When the gate voltage exceeds the threshold value of the gate voltage of the transistor, the field effect transistor 5 is in an off state. Although the gate voltage is greater than the threshold voltage enough to turn on the FET, by turning on the transistor to apply a supply voltage exceeding V S the gate voltage. Applying this high gate voltage causes the field effect transistor 5 to be more difficult to turn o...

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PUM

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Abstract

The invention discloses a low-power-consumption charge pump for field effect power tube grid drive. A low-power-consumption circuit capable of charging the grid of a transistor switch to a charge pump voltage (higher than a supply voltage) provided by the invention comprises a current control oscillator which can generate an oscillation waveform to drive a capacitive type charge pump circuit. The circuit can be used for monitoring the grid voltage of the transistor switch and reducing the frequency of oscillation waveform, thus reducing the power consumption. When the grid voltage exceeds the switch frequency, the fact that the transistor switch can sufficiently make the circuit in a micro-power consumption mode is revealed.

Description

technical field [0001] The invention relates to a micro-power consumption charge pump circuit, which is used to drive the gate voltage of a field effect transistor. A charge pump circuit is used to drive the gate voltage of the field effect transistor to a level that exceeds the supply voltage. Typically, this circuit has been used to drive field effect transistors in order to switch power to electronic loads. For example, in portable computer applications, field-effect power transistors are used to switch external devices such as disk drives and displays. Background technique [0002] In these and other applications, the peripheral is coupled to the power supply of the FET while the drain of the FET is coupled to the supply voltage. When a FET switch is coupled in this manner (as a so-called "high" drive), it is desirable to drive the switch with a gate voltage that exceeds the supply voltage and is used to fully turn on and boost the switch. Charge pump circuits used to...

Claims

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Application Information

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IPC IPC(8): H02M3/07
CPCY02B70/10
Inventor 包兴坤
Owner 苏州硅智源微电子有限公司
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