Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Voltage reference circuit with high power supply rejection ratio

A technology with high power supply rejection ratio and voltage reference, applied in the direction of adjusting electrical variables, control/regulation systems, instruments, etc., can solve the problems of low power supply fluctuation capability and insufficient power supply fluctuation suppression ability, and achieve the goal of improving power supply rejection ratio Effect

Inactive Publication Date: 2021-02-26
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF9 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Aiming at the shortcomings of the above-mentioned traditional bandgap reference structure, which has a low ability to suppress power supply fluctuations, the present invention proposes a voltage reference circuit with a high power supply rejection ratio, which solves the problem that the existing bandgap reference circuit has insufficient ability to suppress power supply fluctuations. question

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Voltage reference circuit with high power supply rejection ratio
  • Voltage reference circuit with high power supply rejection ratio
  • Voltage reference circuit with high power supply rejection ratio

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in detail below in conjunction with the accompanying drawings. Apparently, the described embodiments are only some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0026] It should be noted that in the present invention, relative terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply that these entities or operations Any such actual relationship or order exists between.

[0027] The overall structural block diagram of a voltage reference circuit with high power supply rejection ratio proposed by the present ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A voltage reference circuit with a high power supply rejection ratio comprises a starting module, a zero temperature drift current generation module and an active attenuator module; the starting module reduces a first node potential in the zero temperature drift current generation module when a power supply voltage is established, so that the voltage reference circuit is separated from a zero state, quits working after starting is completed, and the current consumption is reduced to be extremely low; the zero temperature drift current generation module clamps the loop current at a zero temperature drift point through an operational amplifier so as to generate zero temperature drift current, and outputs the zero temperature drift current to the active attenuator module through a current mirror. According to the invention, the introduced current source structure composed of the active attenuator, the second PMOS transistor and the third PMOS transistor and the operational amplifier closed-loop circuit both improve the power supply rejection ratio of the voltage reference circuit, and the active attenuator module converts zero temperature drift current into zero temperature drift voltage through the reference NMOS transistor in diode connection. Meanwhile, a reference voltage is output through a resistance voltage division network formed by a second resistor and a third resistor,and the power supply rejection ratio is further increased.

Description

technical field [0001] The invention belongs to the technical field of integrated circuits, and in particular relates to a high power supply rejection ratio (PowerSupply Rejection Ratio, PSRR) voltage reference circuit. Background technique [0002] The voltage reference circuit is an integral part of all electronic systems. In some special environments, not only the reference voltage generated by the voltage reference circuit is required not to change with the change of the power supply voltage and temperature, but also the reference voltage is required to be sensitive to the fluctuation of the power supply. Inhibition. The traditional bandgap reference structure is the most widely used, but its ability to suppress power supply fluctuations is low under a simple structure. Contents of the invention [0003] Aiming at the shortcomings of the above-mentioned traditional bandgap reference structure, which has a low ability to suppress power supply fluctuations, the present ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G05F1/56
CPCG05F1/56
Inventor 罗萍杨秉中王远飞杨健
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products