133results about How to "Improve power supply rejection ratio" patented technology

The invention relates to a band-gap reference circuit. The band-gap reference circuit comprises a reference voltage source VREF, a band-gap core circuit, a negative feedback circuit and a starting circuit, wherein gate voltage V_REG is stretched by the reference voltage source VREF so that internal voltage pre-stabilization can be achieved, an internal voltage pre-stabilizing circuit is formed, the band-gap core circuit is provided with an automatic biasing cascode amplifying circuit used for increasing a power supply rejection ratio, the negative feedback circuit provides the supply voltage VDD, processed through voltage stabilization, for the band-gap core circuit, and the starting circuit stretches the reference voltage source VREF when work begins so that the automatic biasing cascode amplifying circuit can work normally. According to the band-gap reference circuit, due to the facts that the supply voltage VDD processed through voltage stabilization is provided for the band-gap core circuit through the negative feedback circuit, and the automatic biasing cascode amplifying circuit is adopted inside for increasing the power supply rejection ratio, area and power consumption are saved.

The invention discloses a bandgap reference voltage source which comprises a starting circuit, a core bandgap reference circuit and a high-order compensation circuit. The core bandgap reference circuit comprises PMOS tubes M1, M2 and M3, NPN triodes Q1 and Q2 and resistance units R1, RB1, RB2 and RA; and the high-order compensation circuit comprises PMOS tubes M4, M5, M6, M7, M8, M9, M10 and M11, NPN triodes Q3, Q4, Q5, Q6, Q7 and Q8 and resistance units R2 and R3. The bandgap reference voltage source disclosed by the invention adopts the high-order compensation circuit, thereby the temperature coefficient is reduced greatly; the circuits adopt the resistance ratio, thus the circuits can not be affected by the absolute value of the resistance, and the influence of the temperature coefficient of the resistance to the output quantity can be reduced. The bandgap reference voltage source has high power supply rejection ratio and can ensure that the circuits can resist the interference of a power supply.

An apparatus and method for a system with improved power supply rejection ratio (PSRR) over a wide frequency range. The improved PSRR is achieved by negating the influence of the parasitic capacitance associated with the bias lines and the introduction of a regulated power supply with embodiments associated with providing a ripple free and regulated supply. With reduction of parasitic capacitance, and providing an ENABLE switch by a pre-regulated supply, the degradation of the PSRR is achieved. The embodiments include both n-channel and p-channel MOSFETs implementations, and a positive and negative regulated power supply voltage. With the combined influence of the utilization of the VREG supply, and the lowering of battery-to-bias line capacitance using design layout and improved floor planning an improved PSRR over a wide frequency distribution is achieved.

A voltage regulation circuit. The voltage regulator includes an input stage, a reference voltage circuit, a gain stage, and an output stage. The reference voltage circuit is coupled to one input of the input stage, and the output stage is coupled to another input of the input stage. The gain stage includes a buffer device coupled to the output of the input stage and a drive circuit coupled to the output stage. The buffer device is operable to provide isolation between the input stage and the drive circuit. The drive circuit may include a first transistor coupled to the output stage, a base current translation circuit, and a current divide circuit coupled to the first transistor and to said base current translation circuit. The input stage may be biased with a substantially constant bias current, such that output dependent current loading effects are avoided.

An improved voltage reference generator is provided. The voltage reference generator comprises: a first transistor having a gate electrode biased to place the first transistor in a weak inversion mode; and a second transistor connected in series with said first transistor and having a gate electrode biased to place the second transistor in a weak inversion mode, where the threshold voltage of the first transistor is smaller than the threshold voltage of the second transistor and the gate electrode of the second transistor is electrically coupled to a drain electrode of the second transistor and the source electrode of the first transistor to form an output for a reference voltage.

The invention relates to a low-temperature drift detuning self-calibration operational amplifier circuit and a design method of the low-temperature drift detuning self-calibration operational amplifier circuit. The low-temperature drift detuning self-calibration operational amplifier circuit comprises two gain units, a biased module, three capacitors, a current source, six switches, four P-type metal oxide semiconductor (MOS) pipes and five N-type MOS pipes, wherein each gain unit comprises a capacitor, two resistors, a switch, ten P-type MOS pipes and four N-type MOS pipes. A folded cascade structure is adopted to be used as a gain stage of an amplifier so that high voltage gain and a high power supply rejection ratio can be obtained. Due to the fact that the MOS capacitor is adopted to store, operate and amplify detuning information caused by technology variation, and the detuning information is successively and automatically calibrated when a closed loop is used, low direct current detuning is achieved. A lower temperature coefficient is achieved by adoption of a temperature compensation technology. A high drive capability is obtained by adoption of push-pull output of an AB class.

The invention discloses a low-voltage nanowatt-scale full CMOS current mode reference voltage source. The reference voltage source is characterized by comprising a starting circuit, an IPTATa reference current source circuit, an IPTATb reference current source circuit and a temperature compensating circuit, wherein the starting circuit is connected to the IPTATa reference current source circuit and the IPTATb reference current source circuit and is used for supplying current when the reference voltage source is started so as to deviate the reference voltage source from a degeneration bias point; the IPTATa reference current source circuit and the IPTATb reference current source circuit respectively generate a bias current to supply current bias to the temperature compensating circuit; and the temperature compensating circuit is used for making difference on the two bias currents in different multiples to obtain a temperature-irrelevant reference current and driving an MOS pipe in the temperature compensating circuit to obtain an output voltage which is not influenced by the supply voltage and the temperature change. The reference voltage source has the characteristics that the power consumption is low, the layout area is small, devices are matched with a standard CMOS process, the temperature coefficient is low, and the suppression ratio of the supply voltage is high.

The present invention provides a current controlled oscillator comprising a first section providing a first differential output and a second section providing a second differential output. A loading structure comprised of resistive and reactive elements electrically connects the first differential output with the second differential output. The resistive and reactive elements have values chosen such that the resistive elements substantially extend the linear operating frequency range of the current controlled oscillator. Transistors of the loading structure have which are tied to a power supply rejection ratio compensation section for compensating for variations in power supply voltage.

The invention discloses a high order temperature supplementary band gap reference circuit, comprising a band gap reference main circuit, a feedback control loop and an output circuit, wherein the band gap reference main circuit consists of six PMOS tubes, two NMOS tubes, three resistances and two PNP triodes, the feedback control loop consists of two PMOS tubes, two NMOS tubes and two PNP triodes, and the output circuit consists of two PMOS tubes and four resistances. The circuit of the invention has lower temperature coefficient, higher power supply rejection rate as well as higher process stability.

The invention provides a microphone interface circuit, comprising a power supply module, a resistance convertor and an amplifier, wherein the power supply module provides working voltage for a microphone via a first node; the impedance transformer is provided with a first input end and a second input end, receives an output signal of the microphone; the amplifier is coupled between the impedance transformer and the output end of the microphone interface circuit; and a impedance matcher is coupled between the first node and the second input end of the resistance convertor. The invention can well improve rejection ratio of the power supply, effectively eliminate noise signals and enhance the tone quality of the microphone.

The invention discloses a high PSRR reference source circuit with adjustable output, comprising a generating circuit of a reference source circuit and a first grade circuit for PSRR increase. The circuit is characterized in that a floating voltage source is arranged in the generating circuit of the reference source circuit, a gain increase grade is arranged on a reference voltage output circuit, and the floating voltage source provides proper bias voltage for the gain increase grade so that the gain increase grade can competely work in a saturation region and the reference source circuit can have high PSRR in the entire VREF output region; and the floating voltage source and the gain increase grade guarantee that the reference source circuit can always have high PSRR during the output of wide range of VREF (higher than 1.2V).

A differential amplifier circuit can reduce consumption current and the circuit size while improving a power supply rejection ratio. The differential amplifier circuit includes a power supply line and an input part that includes an input circuit and an active load. The input circuit includes two differential input elements, and the active load includes two transistors connected to the two differential input elements. The input part generates a differential signal in response to an input signal given to the two differential input elements. The differential amplifier circuit also includes an amplifying part for generating an output voltage generating signal by amplifying the differential signal. The differential amplifier circuit also includes an output part for generating an output voltage based on the output voltage generating signal and a power supply voltage. The differential amplifier circuit includes a noise permitting part located between control terminals of the two transistors and the power supply line.

A circuit according to the present invention improves the power supply rejection ratio for a pulse width modulated digital amplifier and can be used as a compressor and/or limiter. The circuit preferably operates by using voltage level translation to vary the amplitude of a triangle wave in response to changes in power supply voltage prior to input of the wave into a comparator of the PWM device. Because the circuit operates to improve power supply rejection, little or no distortion is introduced into the signal when used as a compressor and/or limiter. Additionally, the circuit is optionally implemented in a Class D amplifier, and provides a lower cost of implementation than conventional designs in such implementations.

The invention discloses a pre-regulator circuit capable of increasing band-gap reference power supply rejection ratio. The pre-regulator circuit comprises a starting circuit, a PTAT current circuit and a band-gap referent voltage generating module, wherein the PTAT current circuit comprises a PMOS transistor M5, a PMOS transistor M6, a PMOS transistor M7, a PMOS transistor M8, a transistor Q1, a transistor Q2 and a resistor R1; the band-gap reference voltage generating module comprises a PMOS transistor M9, an NMOS transistor M10, a PMOS transistor M11, a PMOS transistor M12, an NMOS transistor M13, an NMOS transistor M14 and an NMOS transistor M15. The pre-regulator circuit has the advantages that part of the noise fluctuation of power supply voltage is removed through the pre-regulator technology, the pre-regulated voltage is used as the band-gap reference power supply voltage to increase the power supply rejection ratio of the circuit, a negative feedback method is used to increase the impedance from VOUT to power supply voltage in the pre-regulator technology, and the power supply rejection ratio is further increased.

A phase lock loop circuit (60) has a phase frequency detector (62), a charge pump (64), an active filter (87) and a voltage-controlled oscillator (100). The phase detector generates signals responsive to reference signal F_R and VCO output signal F_V. A charge pump generates a voltage at the input of a first transmission gate (76) according to the values of the phase detector signals. A predetermined voltage is generated at the input of a second transmission gate (112). When the transmission gates (76, 110) are closed (low impedance) the charge pump may sink or source current to the inverting input of the operational amplifier (86) of the active filter 86 and the predetermined voltage is applied to the non-inverting input. When the transmission gates are open (high impedance state) the inverting input is electrically isolated from the node and the non-inverting output is isolated from the power supply.

The invention discloses a high-order temperature compensation complementary superposition-based high-precision band-gap reference circuit. The circuit comprises an M-type temperature characteristic curve sub-circuit, a W-type temperature characteristic curve sub-circuit and a superposition mode selection sub-circuit, wherein the M-type temperature characteristic curve sub-circuit and the W-type temperature characteristic curve sub-circuit are arranged complementarily and symmetrically; both the M-type temperature characteristic curve sub-circuit and the W-type temperature characteristic curve sub-circuit comprise a feedback control circuit, a current generating circuit and an output circuit, wherein the current generating circuit is connected with the input end of the superposition mode selecting sub-circuit after being connected with an output circuit in series; and the output end of the output circuit is connected with the input end of the current generating circuit after being connected with the feedback control circuit in series. The circuit reduces a temperature coefficient of an output reference voltage to the maximum by using a nonlinear temperature compensation structure and a nonlinear temperature compensation method, thereby meeting the application of a high-precision system.

An amplifier arrangement comprising an amplifier (AMP) with a terminal (SPL) for a supply signal (VSPL) and a bias circuit (BIAS) for providing the supply signal (VSPL) at the terminal (SPL). The bias circuit holds an operating point (OP) of the amplifier (AMP) constant by means of the supply signal (VSPL). The bias circuit (BIAS) comprises a reference circuit (REF) for providing a reference signal (VREF) and a correction device (COR) by means of which the supply signal (VSPL) is regulated based on the reference signal (VREF) and a correction signal (Vfeed), the correction signal (Vfeed) being dependent on the operating point (OP) of the amplifier (AMP). A method for operating an amplifier arrangement is also described.