Sub-threshold full CMOS reference voltage source

A reference voltage source and reference voltage technology, which is applied in the direction of adjusting electrical variables, control/regulation systems, instruments, etc., and can solve problems such as poor performance of reference voltage sources

Active Publication Date: 2016-01-27
GUILIN UNIV OF ELECTRONIC TECH
View PDF4 Cites 20 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is that the performance of the existing reference voltage source is not good enough to provide a sub-threshold full CMOS reference voltage source

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Sub-threshold full CMOS reference voltage source
  • Sub-threshold full CMOS reference voltage source
  • Sub-threshold full CMOS reference voltage source

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] Below in conjunction with accompanying drawing and embodiment, describe technical solution of the present invention in detail:

[0021] A subthreshold full CMOS voltage reference, such as figure 1 Shown, including start-up circuit, sub-threshold operational amplifier, nanoamp reference current generation circuit and reference voltage generation circuit; where M 0 ~ M 2 For 3.3VMOS tube, M 3 ~ M 32 for 1.8VMOS tube, C 0 and C 1 for the capacitance. Using the working characteristics of MOS transistors in the sub-threshold region, a nanoampere-level reference current is generated; a cascode current mirror is used to suppress power supply noise; an operational amplifier in the sub-threshold region is added to achieve higher power consumption without increasing power consumption. Large gain improves the power supply voltage rejection ratio; using the gate-source voltage difference of 1.8VMOS tube and 3.3VMOS tube, a reference voltage with zero temperature drift is obta...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a sub-threshold full CMOS reference voltage source. A start-up circuit helps a reference voltage source from getting rid of a degeneration bias point to enter the normal working state. A sub-threshold operation amplifier is ensured to run at low power consumption while being larger in gain at the same time. In this way, the voltage rejection ratio of the power supply is increased. An Nano-ampere reference current generating circuit generates a Nano-ampere-level reference current and suppresses the generation of the noise of the power supply so as to provide a current bias for a reference voltage generating circuit. The reference voltage generating circuit is composed of two MOS tube gate voltage differences of different standard voltages, wherein a reference voltage independent of the temperature is obtained through the coadjustment process. According to the invention, no passive resistor, diode or triode is adopted, and the sub-threshold full CMOS reference voltage source is compatible with the standard CMOS process. Therefore, the layout area is greatly reduced, and the production cost is lowered. The sub-threshold full CMOS reference voltage source is small in power consumption, high in power supply rejection ratio, low in temperature drift coefficient and low in power supply voltage regulation rate.

Description

technical field [0001] The invention relates to the field of integrated circuit design, in particular to a sub-threshold full CMOS reference voltage source. Background technique [0002] The voltage reference source is an indispensable module in analog integrated circuits and hybrid integrated circuits. It is commonly used in circuit systems such as analog-to-digital converters (ADC), digital-to-analog converters (DAC), power amplifiers, and DC-DC converters. It is used to generate a voltage reference that does not change with the power supply voltage and temperature, and provides a reference voltage for other circuit modules, and its characteristics greatly affect the performance of the entire system. [0003] With the continuous increase of integrated circuit system integration, low voltage and low power consumption become more and more important. However, the traditional bandgap reference voltage source consumes a lot of power due to the large current required, and needs...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G05F1/56
Inventor 韦雪明朱智勇段吉海邓进丽赵洪飞乔帅领
Owner GUILIN UNIV OF ELECTRONIC TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap