694results about How to "Reduce static power consumption" patented technology

By forming MOSFETs on a substrate having pre-existing ridges of semiconductor material (i.e., a “corrugated substrate”), the resolution limitations associated with conventional semiconductor manufacturing processes can be overcome, and high-performance, low-power transistors can be reliably and repeatably produced. Forming a corrugated substrate prior to actual device formation allows the ridges on the corrugated substrate to be created using high precision techniques that are not ordinarily suitable for device production. MOSFETs that subsequently incorporate the high-precision ridges into their channel regions will typically exhibit much more precise and less variable performance than similar MOSFETs formed using optical lithography-based techniques that cannot provide the same degree of patterning accuracy. Additional performance enhancement techniques such as pulse-shaped doping and “wrapped” gates can be used in conjunction with the segmented channel regions to further enhance device performance.

By forming MOSFETs on a substrate having pre-existing ridges of semiconductor material (i.e., a “corrugated substrate”), the resolution limitations associated with conventional semiconductor manufacturing processes can be overcome, and high-performance, low-power transistors can be reliably and repeatably produced. Forming a corrugated substrate prior to actual device formation allows the ridges on the corrugated substrate to be created using high precision techniques that are not ordinarily suitable for device production. MOSFETs that subsequently incorporate the high-precision ridges into their channel regions will typically exhibit much more precise and less variable performance than similar MOSFETs formed using optical lithography-based techniques that cannot provide the same degree of patterning accuracy. Additional performance enhancement techniques such as pulse-shaped doping and “wrapped” gates can be used in conjunction with the segmented channel regions to further enhance device performance.

By forming MOSFETs on a substrate having pre-existing ridges of semiconductor material (i.e., a “corrugated substrate”), the resolution limitations associated with conventional semiconductor manufacturing processes can be overcome, and high-performance, low-power transistors can be reliably and repeatably produced. Forming a corrugated substrate prior to actual device formation allows the ridges on the corrugated substrate to be created using high precision techniques that are not ordinarily suitable for device production. MOSFETs that subsequently incorporate the high-precision ridges into their channel regions will typically exhibit much more precise and less variable performance than similar MOSFETs formed using optical lithography-based techniques that cannot provide the same degree of patterning accuracy. Additional performance enhancement techniques such as pulse-shaped doping and “wrapped” gates can be used in conjunction with the segmented channel regions to further enhance device performance.

By forming MOSFETs on a substrate having pre-existing ridges of semiconductor material (i.e., a “corrugated substrate”), the resolution limitations associated with conventional semiconductor manufacturing processes can be overcome, and high-performance, low-power transistors can be reliably produced. Ridges on the corrugated substrate can be created using high precision techniques that are not ordinarily suitable for device production. MOSFETs that subsequently incorporate the high-precision ridges into their channel regions will typically exhibit much more precise and less variable performance than similar MOSFETs formed using optical lithography-based techniques that cannot provide the same degree of patterning accuracy. Additional performance enhancement techniques such as pulse-shaped doping, “wrapped” gates, epitaxially grown conductive regions, epitaxially grown high mobility semiconductor materials, high-permittivity ridge isolation material, and narrowed base regions can be used in conjunction with the segmented channel regions to further enhance device performance.

By forming MOSFETs on a substrate having pre-existing ridges of semiconductor material (i.e., a “corrugated substrate”), the resolution limitations associated with conventional semiconductor manufacturing processes can be overcome, and high-performance, low-power transistors can be reliably and repeatably produced. Forming a corrugated substrate prior to actual device formation allows the ridges on the corrugated substrate to be created using high precision techniques that are not ordinarily suitable for device production. MOSFETs that subsequently incorporate the high-precision ridges into their channel regions will typically exhibit much more precise and less variable performance than similar MOSFETs formed using optical lithography-based techniques that cannot provide the same degree of patterning accuracy. Additional performance enhancement techniques such as pulse-shaped doping, “wrapped” gates, epitaxially grown conductive regions, epitaxially grown high mobility semiconductor materials (e.g. silicon-germanium, germanium, gallium arsenide, etc.), high-permittivity ridge isolation material, and narrowed base regions can be used in conjunction with the segmented channel regions to further enhance device performance.

A single-ended to differential converter uses a cross-coupled latch that maximizes the output zero-crossing symmetry and is self compensating over PVT variations. An in-phase driving signal is provided by an always-on transmission gate coupled to the input. An out-of-phase driving signal is provided by an inverter coupled to the input. The in-phase and out-of-phase driving signals each drive an input of the cross-coupled latch. The in-phase driving signal from the always-on transmission gate starts to bring the cross-coupled latch into conduction, and when the out-of-phase driving signal arrives, the simultaneous driving of the cross-coupled latch causes a rapid and symmetric transition of both outputs of the cross-coupled latch.

A memory system uses multiple pulse amplitude modulation (multi-PAM) output drivers and receivers to send and receive multi-PAM sigsnals. A multi-PAM signal has more than two voltage levels, with each data interval now transmitting a “symbol” at one of the valid voltage levels. In one embodiment, a symbol represents two or more bits. The multi-PAM output driver drives an output symbol onto a signal line. The output symbol represents at least two bits that include a most significant bit (MSB) and a least significant bit (LSB). The multi-PAM receiver receives the output symbol from the signal line and determines the MSB and the LSB.

An interrupt controller for managing interrupt requests comprises interrupt control circuitry in a first domain, the first domain being switchable to a low-power mode, and interrupt request monitoring circuitry in a second domain. The interrupt control circuitry is responsive to a low power request signal received by the interrupt controller to communicate interrupt select information to the interrupt request monitoring circuitry prior to the first domain being switched to a low power mode, the interrupt select information identifying interrupt requests which indicate exit from the low power mode. The interrupt request monitoring circuitry comprises a select information store configured to store the select information communicated to the interrupt request monitoring circuitry by the interrupt control circuitry. The interrupt request monitoring circuitry comprises interrupt inputs for receiving the interrupt requests, and is responsive to a received interrupt request identified by the stored interrupt select information as indicating exit from the low power mode to trigger switching of the first domain out of the low power mode.

The present invention provides device components geometries and fabrication strategies for enhancing the electronic performance of electronic devices based on thin films of randomly oriented or partially aligned semiconducting nanotubes. In certain aspects, devices and methods of the present invention incorporate a patterned layer of randomly oriented or partially aligned carbon nanotubes, such as one or more interconnected SWNT networks, providing a semiconductor channel exhibiting improved electronic properties relative to conventional nanotubes-based electronic systems.

By forming MOSFETs on a substrate having pre-existing ridges of semiconductor material (i.e., a “corrugated substrate”), the resolution limitations associated with conventional semiconductor manufacturing processes can be overcome, and high-performance, low-power transistors can be reliably and repeatably produced. Forming a corrugated substrate prior to actual device formation allows the ridges on the corrugated substrate to be created using high precision techniques that are not ordinarily suitable for device production. MOSFETs that subsequently incorporate the high-precision ridges into their channel regions will typically exhibit much more precise and less variable performance than similar MOSFETs formed using optical lithography-based techniques that cannot provide the same degree of patterning accuracy. A multi step epitaxial process can be used to extend the ridges with different dopant types, high mobility semiconductor, and or advanced multi-layer strutures. For CMOS integrated circuits a capping layer is formed over the a first region. Epitaxial layers are formed in a second region. Then the capping layer is removed from the first region and a capping layer is formed over the second region. Epitaxial layers can than be formed in the first region.

The invention relates to an integrated circuit SoC chip circuit structure capable of realizing power reduction and a method thereof. The SoC chip contains at least one working domain which powers off when idle and at least one real-time-domain which continuously powers on, wherein an isolator is arranged between the working domain and the real-time-domain, and the working domain and the real-time-domain are separately connected with an external power supply source. The method of the invention comprises the processes of working domain power-off treatment and working domain wakeup power-on treatment. By adopting the integrated circuit SoC chip circuit structure capable of realizing power reduction and the method thereof, when the chip is idle, the working domain is in power-off state and the real-time-domain generates quiescent power drain; if the leakage of the real-time-domain is ensured to be as low as possible, the quiescent power drain of the chip can be reduced to be as low as possible and the quiescent power drain of the SoC chip can be effectively reduced; the structure is simple and practical, the control process is fast and convenient, the work performance is stable and reliable and the range of application is wide, thus the structure lays a solid foundation for the application of higher precision integrated circuit process technology in portable devices and the further development of portable devices.