62results about How to "Improve electronic properties" patented technology

The present invention provides device components geometries and fabrication strategies for enhancing the electronic performance of electronic devices based on thin films of randomly oriented or partially aligned semiconducting nanotubes. In certain aspects, devices and methods of the present invention incorporate a patterned layer of randomly oriented or partially aligned carbon nanotubes, such as one or more interconnected SWNT networks, providing a semiconductor channel exhibiting improved electronic properties relative to conventional nanotubes-based electronic systems.

P-type active region 12; n-type source/drain regions 13a and 13b; gate insulating film 14 made of a thermal oxide film; gate electrode 15; source/drain electrodes 16a and 16b, are provided over a p-type SiC substrate 11. In the active region 12, p-type heavily doped layers 12a, which are thin enough to create a quantum effect, and thick undoped layers 12b are alternately stacked. When carriers flow, scattering of impurity ions in the active region is reduced, and the channel mobility increases. In the OFF state, a depletion layer expands throughout the active region, and the breakdown voltage increases. As a result of reduction in charges trapped in the gate insulating film or near the interface between the gate insulating film and the active region, the channel mobility further increases.

The invention discloses a platinum diselenide crystal material and a preparation method thereof. The preparation method comprises the following steps: 1) under a vacuum environment, evaporating and depositing a proper amount of high purity selenium on a metal platinum substrate; and 2) carrying out an annealing treatment, so that selenium atoms covering the surface of the substrate and platinum atoms on the substrate interact to form a two-dimensional ordered crystalline state membrane structure in a sandwich arrangement of selenium-platinum-selenium so as to obtain the platinum diselenide crystal material. The inorganic two-dimensional crystalline state material is a new member of a transitional metal disulfide compound family, expands the field of research on non-carbon based two-dimensional crystal materials, and has a wide application potential in future information electronics and apparatus development and research. According to the method disclosed by the invention, the platinum diselenide two-dimensional crystalline state material with a big area and a high quality is grown on a molecular beam epitaxial method, so that the electronic properties of the platinum diselenide crystalline state material and related applications and development are favorably researched.

The invention provides a process for producing a layer of a semiconductor material, wherein the process comprises: a) disposing on a substrate: i) a plurality of particles of a semiconductor material, ii) a binder, wherein the binder is a molecular compound comprising at least one metal atom or metalloid atom, and iii) a solvent; and b) removing the solvent. The invention also provides a layer of semiconductor material obtainable by this process. In a preferred embodiment, the particles of a semiconductor material comprise mesoporous particles of the semiconductor material or mesoporous single crystals of the semiconductor material. The invention provides a process for producing a compact layer of a semiconductor material, wherein the process comprises: disposing on a substrate i) a solvent, and ii) a molecular compound comprising at least one metal or metalloid atom and one or more groups of formula OR, wherein each R is the same or different and is an unsubstituted or substituted C₁-C₈ hydrocarbyl group, and wherein two or more R groups may be bonded to each other; and b) removing the solvent. The invention also provides a compact layer of a semiconductor material obtainable by this process. These processes can be effectively performed at temperatures of less than 300° C. Further provided are semiconductor devices comprising either a layer of a semiconductor material or a compact layer of a semiconductor material obtainable by the processes of the invention. The invention also provides a process for producing a semiconductor device.

The invention discloses a preparation method of a silylene material. The preparation method comprises the following steps of 1) evaporating and depositing a proper amount of silicons to a transitional metal iridium substrate; and 2) annealing the whole sample so that the silicons are interacted with each other; forming a two-dimensional orderly film-shaped structure on the surface of the substrate; and arranging silicon atoms in a hexagonal honeycomb shape, so as to form a novel two-dimensional crystal material-silylene. The novel material is similar to graphene and obtains wide application potential in the future development and research aspect of information electronics and devices.

The invention discloses a catalytic hydrogenation catalyst as well as a preparation thereof and application thereof to the selective hydrogenation reaction of an aromatic nitro compound. The catalystcomprises an activated carbon carrier coated with a modified coating layer and metal quantum dots loaded on the carrier; metal is palladium, and the particle size range of each of the metal quantum dots is between 4 mm and 7 nm; activated carbon is irregular or molded granular activated carbon, and the size is not greater than 1 cm; a pore structure of the activated carbon coated with the modifiedcoating layer is dominated by a mesopore, the micro-pore ratio is reduced to below 10 percent, and the composition materials of the modified coating layer are titanium dioxide, silicon dioxide and titanium silicate. The invention discloses the application of the catalytic hydrogenation catalyst to the reaction of aromatic hydroxylamine shown as a selective catalytic hydrogenation synthesis formula II of the aromatic nitro compound shown as a formula I; the catalytic hydrogenation catalyst has the characteristics of no additive requirement, high conversion rate, good selectivity, high hydrogenation reaction rate, good stability, long catalyst service life and hydrogen recycling.

The invention relates to a fuel cell cathode catalyst and a preparation method thereof, a membrane electrode and a fuel cell. The preparation method of the fuel cell cathode catalyst comprises the following steps: providing or preparing a nitrogen-doped carbon carrier deposited with platinum alloy nanoparticles, wherein the platinum alloy nanoparticles comprise platinum and at least one 3d transition metal; and carrying out acid treatment to consume the 3d transition metal on the surface layer of the platinum alloy nanoparticles, and then, carrying out heat treatment for 1-20 h at the temperature of 100-300 DEG C to obtain the fuel cell cathode catalyst. The fuel cell cathode catalyst prepared by the preparation method has excellent catalytic activity and stability, and is beneficial to industrial application.

The invention belongs to the technical field of carbon nanotube, and discloses a flame method modified carbon nanotube, and a preparation method and applications thereof. According to the preparationmethod, ethanol flame combustion is adopted for surface modification of carbon nanotube so as to obtain TCNTs with a relatively large pore diameter as a matrix; in the presence of a nickel salt catalyst, flame combustion time and temperature are controlled, and in-suit growth of nanometer scale short carbon nanotubes (FCNTs) on the internal wall and the external wall of the TCNTs with certain spatial constraint effect is realized, and carbon nanotube composite fractal structures with different modification effects are obtained; when the flame method modified carbon nanotube is taken as a lithium ion battery anode material, excellent lithium ion storage ratio capacity is achieved. Compared with chemical vapor deposition method in the prior art wherein expensive production equipment, enclosed production environment, and relatively temperature (higher than 650 DEG C) are needed, the preparation method possesses following advantages: only alcohol flame is needed, open production environment is enough for production, and treatment temperature is relatively low (as low as 450 DEG C); obvious competitiveness is achieved; and large scale product is more convenient to realize.

The present invention proposes a method of producing a gallium nitride-based III-V Group compound semiconductor device. First, beryllium ions are diffused into the p-type layer of gallium nitride to increase hole mobility. Contacts are then added in subsequent procedures, thereby forming contacts having low-impedance ohmic contact layers.

The invention relates to a feed-in device of a monopole antenna, as well as a relevant analog broadcast playing system and an integrating system, in particular to a feed-in device used for a monopole antenna. The monopole antenna comprises a radiating unit and a grounding unit used for transmitting a multimedia signal to a multimedia playing device coupled to the radiating unit. The feed-in device comprises a first feed-in unit and a second feed-in unit, wherein the first feed-in unit is coupled to an inner lead of a coaxial cable and used for feeding the multimedia signal transmitted throughthe coaxial cable into the radiating unit; and the second feed-in unit is coupled to a net-shaped conductor of the coaxial cable and used for connecting the grounding unit. The feed-in device with the perfect grounding function completely feeds an analog broadcast signal into the analog broadcast playing system in a signal conduction mode, and a user does not need to disassemble the shell or the interior decorations of a vehicle and follow the specification restrictions of the FCC (Federal Communications Commission), i.e. the analog broadcast playing system can be shared to play digital satellite broadcasting program contents.

A leadframe package includes a die pad with four unitary, outwardly extending slender bars; a plurality of leads arranged along periphery of the die pad; a separate pad segment separated from the die pad and isolated from the plurality of leads; a semiconductor die mounted on an upper side of the die pad, wherein the semiconductor die contains first bond pads wire-bonded to respective the plurality of leads and a second bond pad wire-bonded to the separate pad segment; and a molding compound encapsulating the semiconductor die, the upper side of the die pad, the first suspended pad segment and inner portions of the plurality of leads.

The invention belongs to the technical field of sodium-sulfur batteries, and relates to a preparation method of a positive electrode material of a sodium-sulfur battery. The preparation method comprises the following steps of: (1) pretreating CNTs; (2) preparing CNTs@NiFe-LDH/C; and (3) preparing S@CNTs@NiFe-LDH/C composite material. According to the method, a graded nanostructure of superfine amorphous ferronickel layered double hydroxide andnanocarbon grafted on a carbon nanotube skeleton is constructed through in-situ growth; and with the obtained composite material adopted, the shuttling problem of sodium polysulfide can be effectively solved.

A process of forming a cross-linked electronically active hydrophilic co-polymer comprising the steps of: providing a co-monomer solution comprising at least one hydrophobic monomer, at least one hydrophilic monomer, water, at least one amino acid and at least one cross-linker; and polymerising the co-monomer solution.

A process of forming a cross-linked electronically active hydrophilic co-polymer is provided and includes the steps of: a. mixing an intrinsically electronically active material with water to form an intermediate mixture; b. adding at least one hydrophilic monomer, at least one hydrophobic monomer, and at least one cross-linker to the intermediate mixture to form a co-monomer mixture; and c. polymerising the co-monomer mixture.

The invention discloses a peanut bran-based supercapacitor electrode material and a preparation method and application thereof, and belongs to the technical field of supercapacitors. The supercapacitor electrode material is prepared by taking peanut bran powder as a raw material and potassium hydroxide and urea as activators. The preparation method comprises the following steps: drying peanut bran, crushing to obtain peanut bran powder, mixing the peanut bran powder with KOH and urea according to a certain ratio, dehydrating, and carbonizing to obtain the biomass carbon material. The biomass carbon provided by the invention has rich pore channel structures and a high graphitization degree, and has the characteristics of high specific capacitance, reversibility and good conductivity when being used as an electrode material of a supercapacitor. Meanwhile, the source of raw materials is wide, the problem of energy shortage is solved, and the cost of the electrode material can be effectively reduced, and the preparation process is simple, safe to use and easy to control and scale.