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A copper indium gallium sulfur two-dimensional nanostructure array and its preparation method and application

A two-dimensional nanostructure, copper indium gallium sulfide technology, applied in nanotechnology, nano optics, nanotechnology, etc., can solve the problems of insufficient absorption, sensitivity to light incident angle, and high preparation cost

Active Publication Date: 2021-05-18
SHANGQIU NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] Aiming at the deficiencies of the prior art, the object of the present invention is to provide a copper indium gallium sulfur two-dimensional nanostructure array and its preparation method and application, which can effectively solve the problem that the light absorption of the solar cell absorption layer in the photovoltaic field is not strong enough , is sensitive to the incident angle of light, and the problem of high preparation cost

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  • A copper indium gallium sulfur two-dimensional nanostructure array and its preparation method and application
  • A copper indium gallium sulfur two-dimensional nanostructure array and its preparation method and application

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Embodiment 1

[0034] A copper indium gallium sulfur two-dimensional nanostructure array, the preparation method of which comprises the following steps:

[0035] (1) Clean the FTO glass substrate sequentially with 1mol / L NaOH, 1mol / L HCl solution, absolute ethanol, and deionized water, and then put it into the bottom of the stainless steel reactor. Copper chloride dihydrate, thiourea and polyvinylpyrrolidone (PVP) are dissolved in 95% (v / v) ethanol (precursor liquid), put into reactor, the ratio of precursor liquid volume and reactor volume is 3:5 ;

[0036] (2) After sealing the reaction kettle, put it into a blast drying oven, heat it at 100°C for 5h, take out the FTO glass substrate, wash and dry it, and obtain Cu substrates arranged regularly. 2 S nanosheet clusters;

[0037] (3) Through the continuous ion layer adsorption and reaction method (SILAR), in a constant temperature water bath at 10 ° C, the FTO glass substrate obtained in step (2) was sequentially placed in 0.1M InCl 3 sol...

Embodiment 2

[0040] A copper indium gallium sulfur two-dimensional nanostructure array, the preparation method of which comprises the following steps:

[0041] (1) Clean the FTO glass substrate sequentially with 1mol / L NaOH, 1mol / L HCl solution, absolute ethanol, and deionized water, and put it into the bottom of the stainless steel reactor. Copper chloride dihydrate, thiourea and polyvinylpyrrolidone (PVP) are dissolved in 95% (v / v) ethanol (precursor liquid), put into reactor, the ratio of precursor liquid volume and reactor volume is 4:5 ;

[0042] (2) After sealing the reaction kettle, put it into a blast drying oven, heat it at 300°C for 72h, take out the FTO glass substrate, wash and dry it, and obtain Cu substrates arranged regularly. 2 S nanosheet clusters;

[0043] (3) Through the continuous ion layer adsorption and reaction method (SILAR), in a constant temperature water bath at 20 ° C, the FTO glass substrate obtained in step (2) was sequentially placed in 0.5M InCl 3 solutio...

Embodiment 3

[0046] A copper indium gallium sulfur two-dimensional nanostructure array, the preparation method of which comprises the following steps:

[0047] (1) Clean the FTO glass substrate sequentially with 1mol / L NaOH, 1mol / L HCl solution, absolute ethanol, and deionized water, and then put it into the bottom of the stainless steel reactor. Copper chloride dihydrate, thiourea and PVP are dissolved in 95% ethanol (precursor solution), and put into a reactor, the ratio of the volume of the precursor solution to the volume of the reactor is 3:5;

[0048] (2) After sealing the reaction kettle, put it into a blast drying oven, heat it at 200°C for 24 hours, take out the FTO glass substrate, wash and dry it, and obtain Cu substrates arranged regularly. 2 S nanosheet clusters;

[0049] (3) Through the continuous ion layer adsorption and reaction method (SILAR), in a constant temperature water bath at 15 ° C, the FTO glass substrate obtained in step (2) was sequentially placed in 1M InCl 3...

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Abstract

The invention discloses a copper indium gallium sulfur two-dimensional nanostructure array and its preparation method and application. The two-dimensional nanostructure array is composed of regularly arranged semiconductor nanosheet clusters grown on an FTO glass substrate. The present invention directly grows Cu on the FTO glass substrate by hydrothermal method x S nanosheet clusters, and then SILAR indium gallium sulfide on it, and then annealed, so that the deposited indium gallium sulfide part into the Cu x In the S lattice, a copper indium gallium sulfur two-dimensional nanostructure array is obtained. Among them, the SILAR method can adjust the thickness of the deposited film by controlling the number of deposition cycles. At the same time, this method inherits the advantages of atomic layer deposition and can achieve uniform deposition of films on complex substrates. The two-dimensional nanostructure array prepared by the invention is arranged in an orderly manner, has good periodicity and excellent light absorption performance, and can be used for the preparation of high-efficiency and large-area solar cells.

Description

technical field [0001] The invention belongs to the technical field of solar photovoltaic cells, and specifically relates to a copper indium gallium sulfur two-dimensional nanostructure array and a preparation method and application thereof. Background technique [0002] With the development of nanotechnology and the improvement of people's requirements for photoelectric conversion efficiency, nanomaterials have attracted continuous attention in the field of photovoltaics due to their large specific surface area and good light absorption performance. At the same time, more and more researchers have begun the preparation of nanomaterial solar cells, such as nanofilms, nanowires, and nanoribbon array solar cells. [0003] Chinese patent CN201910137636 discloses a method of copper-cobalt-tin-sulfur nanocrystalline thin film that can be applied in the field of solar cells. In the method, the mixed raw material containing copper salt, tin salt, cobalt salt and sulfur source is r...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L31/18B82Y20/00B82Y40/00
CPCB82Y20/00B82Y40/00H01L21/02422H01L21/02568H01L21/02598H01L21/0262H01L31/18Y02P70/50
Inventor 李立强贾廷见曹译恒
Owner SHANGQIU NORMAL UNIVERSITY
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