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Acetone gas sensitive material and preparation method thereof

A technology of acetone gas-sensing and gas-sensing materials, which is applied in the fields of analysis materials, material resistance, chemical instruments and methods, etc., can solve the problems of high detection limit, high working temperature, low sensitivity of acetone gas, etc., and achieves high sensitivity and low cost. , high selectivity and stability

Pending Publication Date: 2020-08-04
YANGZHOU UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In order to overcome the above ZnFe 2 o 4 Nanoparticles etc. have low sensitivity to low-concentration acetone gas, high working temperature and high detection limit defects. The purpose of this invention is to provide a kind of acetone gas-sensitive material and its preparation method

Method used

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  • Acetone gas sensitive material and preparation method thereof
  • Acetone gas sensitive material and preparation method thereof
  • Acetone gas sensitive material and preparation method thereof

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preparation example Construction

[0029] The preparation method of gas-sensitive material of the present invention, carry out as follows:

[0030] (1) Preparation of organic solvents. At room temperature, pour isopropanol (30 ml) and glycerol (8 ml) into a 250 ml beaker successively, and magnetically stir for a period of time to obtain a homogeneous organic solvent system.

[0031] (2) Preparation of the mixed solution. At room temperature, Cu(CH 3 COO) 2 ·H 2 O, Zn(CH 3 COO) 2 2H 2 O and Fe(NO 3 ) 3 9H 2 The molar mass ratio of O is x mmol: 1-x mmol: 1 mmol (x=0.25, 0.5, 0.75, 1) and added to the organic solvent system in step (1) while stirring, and a uniform solution was obtained after magnetic stirring for a certain period of time.

[0032] (3) Autoclave reaction. Transfer the homogeneous solution in step (2) to a 100 ml polytetrafluoroethylene-lined stainless steel autoclave, seal it, and place it at 180 ° C for 12 h. After the reaction, it is naturally cooled to room temperature, centrifuged, ...

Embodiment 1

[0038] At room temperature, mix 8 ml of glycerin and 30 ml of isopropanol, and magnetically stir to obtain a homogeneous organic solvent. 0.125mmol Cu(CH 3 COO) 2 ·H 2 O, 0.375 mmol Zn(CH 3 COO) 2 2H 2 O and 1 mmol Fe(NO 3 ) 3 9H 2 O was added to the mixed solvent successively while stirring, and a uniform solution was obtained after stirring for a certain period of time. Then transfer it to a 100 ml polytetrafluoroethylene-lined stainless steel autoclave, seal it, and keep it at 180 °C for 12 h. After the reaction is completed, it is naturally cooled to room temperature, centrifuged, washed, and the product is heated at 60 °C. After drying for 12 h, the precursor material was obtained. Finally, the obtained precursor material was subjected to high-temperature heat treatment at a temperature of 400 °C, held for 2 h, and the heating rate was 4 °C / min, and then naturally cooled to room temperature to obtain a hollow structure Cu 0.25 Zn 0.75 Fe 2 o 4 gas sensitive m...

Embodiment 2

[0040] At room temperature, mix 8 ml of glycerin and 30 ml of isopropanol, and magnetically stir to obtain a homogeneous organic solvent. 0.25 mmolCu(CH 3 COO) 2 ·H 2 O, 0.25 mmol Zn(CH 3 COO) 2 2H 2 O and 1 mmol Fe(NO 3 ) 3 9H 2 O was added to the mixed solvent successively while stirring, and a uniform solution was obtained after stirring for a certain period of time. Then transfer it to a 100 ml polytetrafluoroethylene-lined stainless steel autoclave, seal it, and keep it at 180 °C for 12 h. After the reaction is completed, it is naturally cooled to room temperature, centrifuged, washed, and the product is heated at 60 °C. After drying for 12 h, the precursor material was obtained. Finally, the obtained precursor material was subjected to high-temperature heat treatment at a temperature of 400 °C, held for 2 h, and the heating rate was 4 °C / min, and then naturally cooled to room temperature to obtain a hollow structure Cu 0.5 Zn 0.5 Fe 2 o 4 gas sensitive mater...

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Abstract

The invention discloses an acetone gas sensitive material and a preparation method thereof. The material has the following structure: CuxZn (1-x) Fe2O4, x = 0.25-1, the copper-zinc mixed ferrite hollow sphere acetone gas sensitive material is prepared by adopting a one-step solvothermal method and high-temperature heat treatment, and the novel spinel structure gas sensitive material is successfully obtained by gradually replacing Zn ions with Cu ions. The preparation method is simple, efficient and safe, the cost is low, the practical application value is high, according to the gas sensitive material, cation redistribution is realized, a hollow structure is realized, compared with a zinc ferrite hollow ball, the mixed spinel structure gas-sensitive material and CuFe2O4 hollow spheres showmore excellent gas-sensitive performance on low-concentration acetone at a relatively low temperature (125 DEG C), including high sensitivity, quick response and excellent selectivity, and show a wideapplication prospect in the field of quick nondestructive detection of respiratory gas (acetone) of diabetic patients.

Description

technical field [0001] The invention relates to the technical field of gas-sensing materials, in particular to a mixed-type ferrite-acetone gas-sensing material, a preparation method thereof, and gas-sensing applications. Background technique [0002] Over the past few decades, metal oxide semiconductors (MOSs) have attracted considerable attention due to their excellent gas sensing properties. such as α-Fe 2 o 3 , SnO 2 , In 2 o 3 , WO 3 , ZnO, NiO, etc., have been extensively studied and applied to gas sensors due to their small size, low cost, and low power consumption. In recent years, spinel oxide (AB 2 o 4 ) have attracted much attention due to their excellent gas sensitivity, and the response to certain gases is often higher than that of single metal oxides. As a typical spinel ferrite (AFe 2 o 4 ; A = Mn, Zn, Co, Ni, Cd), zinc ferrite (ZnFe 2 o 4 ) is a semiconductor with a narrow bandgap (~1.9 eV) and has attracted much attention in the field of gas sen...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G49/00G01N27/12
CPCC01G49/009C01G49/0063G01N27/125C01P2004/34C01P2004/61C01P2004/03C01P2004/04
Inventor 张超吴凯迪刘雨涵刘可为徐金勇
Owner YANGZHOU UNIV
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