A method for forming a highly activated ultra shallow 
ion implanted semiconductive elements for use in sub-tenth micron 
MOSFET technology is described. A key feature of the method is the ability to activate the implanted 
impurity to a highly 
active state without permitting the 
dopant to diffuse further to deepen the junction. A selected single 
crystalline silicon active region is first amorphized by implanting a 
heavy ion such as 
silicon or 
germanium. A semiconductive 
impurity for example 
boron is then implanted and activated by 
pulsed laser annealing whereby the pulse 
fluence, frequency, and duration are chosen to maintain the amorphized region just below it's 
melting temperature. It is found that just below the 
melting temperature there is sufficient local 
ion mobility to secure the 
dopant into active positions within the 
silicon matrix to achieve a high degree of activation with essentially no change in concentration profile. The selection of the proper 
laser annealing parameters is optimized by observation of the reduction of 
sheet resistance and concentration profile as measured on a 
test site. Application of the method is applied to forming a MOS FET and a 
CMOS device. The additional 
processing steps required by the invention are applied simultaneously to both n-channel and p-channel devices of the 
CMOS device pair.