Wide base region lumped electric charge modeling method for large-power bipolar semiconductor device
A modeling method and semiconductor technology, applied in the fields of instruments, electrical digital data processing, special data processing applications, etc., can solve the problems of mixed model parameters, low simulation accuracy, high numerical model accuracy, and achieve clear definition and representation. Improve simulation accuracy and reduce complexity
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[0027] The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments to facilitate a clear understanding of the present invention, but they do not limit the present invention.
[0028] Such as figure 1 As shown, the present invention divides the wide base area into n areas with equal width, and uses n lumped charges to represent the charge distribution in the n areas respectively, n≥3, that is, n is an integer greater than or equal to 3, according to the area The charge distribution and charge motion mechanism define drift current and diffusion current, determine the hole current and electron current between adjacent regions through the current density equation, and determine the recombination current caused by the charge in each region according to the current continuity equation, and use the hole current , electron current and recombination current as the basis to establish a lumped charge model with a ...
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