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3 results about "Diffusion current" patented technology

Diffusion Current is a current in a semiconductor caused by the diffusion of charge carriers (holes and/or electrons). This is the current which is due to the transport of charges occurring because of non-uniform concentration of charged particles in a semiconductor. The drift current, by contrast, is due to the motion of charge carriers due to the force exerted on them by an electric field. Diffusion current can be in the same or opposite direction of a drift current. The diffusion current and drift current together are described by the drift–diffusion equation.

A method for measuring the thickness of a diffusion layer at a wafer level

A wafer-level diffusion layer thickness measurement method converts limiting diffusion current into diffusion layer thickness, realizes evaluation of mass transfer performance of different types of electroplating tanks in the same dimension, overcomes the problem of great difference between electric field, flow field, concentration field and wafer-level electroplating copper process in the test electrolytic cell, is closer to the actual electroplating process, and can guide the understanding of TSV hole, bump, RDL and other electroplating copper processes.
Owner:XIAMEN UNIV

Passivation efficacy testing method, device and system, computer equipment and storage medium

PendingCN122092795Aachieve efficiencyRealize evaluationPhotovoltaic monitoringElectrical batteryComputational physics
The invention relates to a passivation efficacy test method, device and system, computer equipment and a storage medium, and the method comprises the steps: carrying out the dark-state volt-ampere test of a perovskite photovoltaic cell, obtaining the volt-ampere characteristic parameters, carrying out the fitting analysis through combining with the volt-ampere characteristic parameters, obtaining the diffusion current and generated current of the perovskite photovoltaic cell in a reverse bias state, and obtaining the passivation efficacy of the perovskite photovoltaic cell. Finally, the diffusion current and the generated current are combined for analysis and calculation, and passivation efficiency parameters representing the passivation efficiency of the perovskite photovoltaic cell in the current state can be obtained. Through the scheme, the passivation potency parameter of the perovskite photovoltaic cell can be analyzed and calculated by adopting a simple volt-ampere test mode without a complex algorithm, that is, the performance evaluation of the passivation material of the perovskite photovoltaic cell is realized, the evaluation algorithm is simple, and the calculation cost is greatly reduced.
Owner:CONTEMPORARY AMPEREX TECHNOLOGY CO LTD

A method for detecting the limiting diffusion current density of lithium-ion batteries during fast charging

This application discloses a method for detecting the limiting diffusion current density of a lithium-ion battery during fast charging. The method includes: obtaining the negative electrode system and electrolyte system in a testing device based on the lithium-ion battery system to be tested; sequentially stacking a first electrode, a first separator, a first reference electrode, a second separator, and a second electrode in the first electrolyte of the testing device to form a battery circuit; the second electrode includes: a first current collector with a groove on one side, and two reference electrodes disposed in the groove; a negative electrode active material layer disposed on at least one side of the first current collector; and an insulating encapsulation film disposed between the negative electrode active material layer and the first current collector; operating the testing device and charging the battery circuit with a first preset current in i cycles and a second preset current in i+1 cycles; detecting the potential difference between the first reference electrode and the second reference electrode, determining the maximum potential difference, and taking the charging current density at the first occurrence of the maximum potential difference as the limiting diffusion current density.
Owner:BEIJING INST OF TECH