Transverse parasitic plug-and-play (PNP) device in SiGe heterojunction bipolar transistor (HBT) technique and production method

Abstract

The invention discloses a transverse parasitic PNP device in the SiGe HBT technique. An active region is isolated by field oxide of a shallow groove; a collector region comprises P-type buried layers formed at the bottom of the shallow groove and on two sides of the active region and P-type impurity ion implanted layers formed at the bottom of the shallow groove and connected with the P-type buried layers, wherein the transverse distance between each P-type buried layer and a base region is larger than 1 micron; the base region is formed by an N-type impurity ion implanted layer formed on the upper portion of the active region; and an emitting region is formed by a P-type SiGe epitaxial layer formed on the N-type impurity ion implanted layer of the active region and a polysilicon layer formed at the top of the shallow groove and connected with the P-type SiGe epitaxial layer, wherein the upper portion of the P-type SiGe epitaxial layer is provided with a silicide barrier layer. The invention further discloses a production method of the PNP device. According to the device and the method, the performances of the PNP device are improved, SiGe free of metal silicide is formed in the emitting region, loss of silicon for the metal silicide is reduced, the thickness of the emitting region is increased, base diffusion current is reduced, and the DC amplification factor is increased.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuits, in particular to a lateral parasitic PNP device in a silicon-germanium HBT process. The invention also relates to a manufacturing method of the lateral parasitic PNP device in the silicon germanium HBT process. Background technique [0002] The lateral parasitic PNP transistor in the conventional silicon germanium HBT process, its collector region is formed by high-dose, low-energy boron implantation plus an annealing impurity and / or traditional CMOS P-well implantation, so doped The impurity concentration is higher, and the metal silicide on the emitter makes the diffusion length of the emitter region shorter, resulting in a larger diffusion current in the base region. In order to make the device have a proper DC current magnification, it is usually necessary to reduce the concentration and thickness of the base region to increase the diffusion current in the collector region, a...

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Problems solved by technology

[0002] The lateral parasitic PNP transistor in the conventional silicon germanium HBT process, its collector region is formed by high-dose, low-energy boron implantation plus an annealing impurity and / or traditional CMOS P-well implantation, so doped The impurity concentration is higher, and there is metal silicide on the emitter, which makes the diffusion length of the emitter region shorter, resulting in a larger diffusion current in the base region

In order to make the device have a proper DC current magnification, it is usually necessary to reduce the concentration and thickness of the base region to increase the diffusion current in the collector region, and the Earley voltage of the triode formed in this way is very low, and the consistency of the main parameters of the device will be very poor.

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