13 results about "Vertical-external-cavity surface-emitting-laser" patented technology

The invention relates to the technical field of lasers, in particular to a multi-chip vertical external cavity surface emitting laser which comprises a chip set, a first prism, a second prism and an output coupling mirror which are sequentially arranged along a preset central axis. The chipset comprises N gain chips, and the N gain chips output N sub light beams; the N sub-beams pass through the first prism, the sub-beams emitted from the first prism converge towards a preset central axis, the sub-beams are incident to the second prism before convergence and are combined into a resonant beam through the second prism, the resonant beam resonates in a resonant cavity formed by the output coupling mirror and the chip set, and the output coupling mirror and the chip set form a resonant cavity; the output laser is emitted from the output coupling mirror; wherein N is greater than 1. The invention is beneficial for solving the problems that the power of a single chip is limited, the beam combining efficiency is low, only incoherent beam combining can be realized, and a multi-chip beam combining structure is complex.

Non-invasive in vivo measurement, by Raman spectroscopy, of analyte e.g. glucose present in e.g. interstitial fluid in the skin of a subject. A plurality of vertical-cavity surface-emitting lasers (VC

An electronic device includes a self -mixing interferometer (SMI) sensor. The SMI sensor includes a vertical cavity surface emitting laser (VCSEL) configured to output optical light toward a user or object. The VCSEL includes: a. semiconductor substrate; a first reflector structure formed above a first surface of the semiconductor substrate; a second reflector structure formed above the first surface of the semiconductor substrate; a. Fabry-Perot Cavity including an active region arranged, between the first reflector structure and the second reflector structure; a mode filter cap layer formed on or over a first surface of the first reflector structure facing away from the semiconductor substrate. The SMI sensor further includes a detector configured detect self-mixing interferometer (SMI) signals formed in the Fabry-Perot Cavity and further configured to generate electrical signals based on the detected reflected optical light.

A vertical-cavity surface-emitting laser includes a first reflector connected to a first semiconductor substrate, a second reflector, and an active region including a quantum well structure for emitting light. The active region is located in series between the first reflector and the second reflector. The first reflector is located in series between the first semiconductor substrate and the active region. A surface of an outer face of the first semiconductor substrate that faces away from the first reflector has an orientation mark that is configured so as to define a position of the vertical-cavity surface-emitting laser in a plane in parallel with the outer face of the first semiconductor substrate.

Circuits, such as chiplets and memory devices, and surface-emitting light sources, such as vertical-cavity surface-emitting lasers (VCSELs), are bonded to a front side of a photonic wafer-scale interposer (PWSI). The PWSI includes waveguides for communication among the circuits, memory devices, and surface-emitting light sources. Memory devices are grouped by a memory fabric, resulting in a disaggregated memory structure. A first circuit accesses memory. The accessing is based on the disaggregated memory structure. The accessing can include sending electrical data by the first circuit to a first surface-emitting light source. A degree of freedom (DoF) of a light beam emitted by the first surface-emitting light source can be modulated. The emitted light beam can comprise a degree of freedom modulated beam (DFMB) that is based on the sent electrical data. The memory fabric can allocate memory based on memory needs of the first circuit.

The invention is entitled "VCSEL array for HAMR." The present disclosure relates to the pre-processing of a magnetic recording head for a magnetic media drive. For a heat-assisted magnetic recording (HAMR) head, an optical source provides the heat necessary for the drive operation. A vertical cavity surface emitting laser (VCSEL) is mounted to the top surface of the slider. A plurality of laser beams are emitted from the bottom surface of the VCSEL and are directed to a corresponding number of waveguide structures within the HAMR head. The waveguide structures feed into a multimode interference (MMI) device which then directs the laser light into a single waveguide to be focused on a near-field transducer (NFT). The VCSEL laser is phase coherent and does not have mode hopping.

Aspects of the present disclosure include spatially distributed depth sensor arrays for vehicle sensing. An example spatially distributed depth sensor array includes a 1 x N array of unit cells. Each unit cell includes a receiving pixel having at least one single photon avalanche photodiode (SPAD) vertically stacked above at least one time-to-digital converter (TDC), a transmitting pixel having at least one vertical cavity surface emitting laser (VCSEL), and a backplane. The receiving pixel and the transmitting pixel are integrated onto a surface of the backplane to define a respective unit cell. The backplane is configured to receive a time-of-flight (TOF) signal from the at least one SPAD in response to detecting a photon emitted from the at least one VCSEL.

A laser assembly includes a vertical cavity surface emitting laser and a resonant cavity extension. The resonant cavity extension is defined by two separate portions. A first portion may be formed from gallium arsenide and can define a microlens. A silicon dioxide layer can be disposed over the first portion and may be polished to a flat, planar surface. Reflective layers may interpose the first portion and second portion of the resonant cavity extension, and a reflective layer may be disposed over the planar surface. As a result of this construction, an extended cavity vertical surface emitting laser can be defined that is resistant to mode hopping and exhibits improved coherence length, beam divergence (high numerical aperture), and beam quality.

This disclosure relates to the field of vertical-cavity surface-emitting lasers (VCSELs), and particularly to a semiconductor device (1) comprising a VCSEL array and a method for manufacturing the semiconductor device comprising the VCSEL array, wherein the semiconductor device comprises: a first VCSEL having a first active region; a second VCSEL having a second active region; a bridge connecting the first VCSEL and the second VCSEL; wherein the first active region of the first VCSEL and the second active region of the second VCSEL are arranged along a first crystal axis; and a blocking structure disposed between the first VCSEL and the second VCSEL, wherein the blocking structure is adapted to block defects from propagating along the first crystal axis between the first VCSEL and the second VCSEL.

The invention discloses a vertical external cavity surface emitting laser and laser equipment, and relates to the technical field of semiconductor light sources. The vertical external cavity surface emitting laser comprises a pump light source and a light emitting structure which are arranged in a stacked mode and further comprises a resonance assembly arranged on the light emitting structure for emitting light, a first resonance cavity is formed between the resonance assembly and the light emitting structure, pump light beams emitted by the pump light source are projected to the light emitting structure, and the light emitting structure is stimulated to emit photons in a radiation mode. And the photons are reflected back and forth in the first resonant cavity and are stimulated again in the back-and-forth reflection process to form a laser beam. According to the vertical external cavity surface emitting laser and the laser equipment, the volume of the vertical external cavity surface emitting laser can be reduced, and the coupling efficiency is improved.

Embodiments of the present disclosure generally relate to a vertical cavity surface emitting laser, a head gimbal assembly for mounting a vertical cavity surface emitting laser, and devices incorporating such articles. In an embodiment, a vertical cavity surface emitting laser (VCSEL) device is provided. The VCSEL device includes a chip for mounting on a slider and two laser diode electrodes. The chip has six surfaces, wherein a first surface of the chip is for facing the slider, a second surface of the chip is opposite the first surface, and the two laser diode electrodes are positioned in any combination on one or more of a third surface, a fourth surface, a fifth surface, or a sixth surface of the chip.

The invention discloses a vertical external cavity surface emitting laser and laser equipment, and relates to the technical field of semiconductor light sources. The vertical external cavity surface emitting laser comprises a pump light source, a pump transparent reflecting layer and a first active layer which are arranged in a stacked mode, a first reflecting mirror is further arranged on the side, away from the pump transparent reflecting layer, of the first active layer, and a resonant cavity is formed by the first reflecting mirror and the pump transparent reflecting layer. A pumping light beam emitted by the pumping light source is projected to the first active layer through the pumping transparent reflecting layer to excite the first active layer to emit photons, and the photons are reflected back and forth in the resonant cavity and are subjected to stimulated radiation again in the back-and-forth reflection process to form a laser beam. According to the vertical external cavity surface emitting laser and the laser equipment, the volume of the vertical external cavity surface emitting laser can be reduced, and the coupling efficiency is improved.

An erasable magnetoresistive random access memory (MRAM) structure and method of manufacturing the same includes an MRAM cell disposed between a bit line circuit element and a word line circuit element, and a vertical cavity surface emitting laser (VCSEL) element disposed above the MRAM cell. Laser output of the VCSEL is directed toward the MRAM cell.