135 results about "Vertical-external-cavity surface-emitting-laser" patented technology

A vertical-cavity surface-emitting laser (VCSEL) may include a first mirror structure over a cavity region. The VCSEL may include a grating associated with polarizing light emitted by the VCSEL. The grating may be over the first mirror structure. The VCSEL may include a mode filter (MF) structure over the grating. The MF structure may comprise an MF layer in a first region of the MF structure to at least partially suppress a higher order transverse mode (HOM) of the light, the MF layer comprising a dielectric layer. The MF structure may include a second minor structure in at least a second region of the MF structure to increase reflectivity on a side of the VCSEL comprising the first minor structure.

A vertical-cavity surface-emitting laser (VCSEL) may include a first top mirror structure over a cavity region. The VCSEL may include a grating layer over the first top mirror structure. The grating layer may comprise a plurality of oxidized regions that form a grating structure in the grating layer. The grating structure may be associated with polarization of output light emitted by the VCSEL. The surface of the grating layer may be a planar surface.

The invention relates to the technical field of lasers, in particular to a multi-chip vertical external cavity surface emitting laser which comprises a chip set, a first prism, a second prism and an output coupling mirror which are sequentially arranged along a preset central axis. The chipset comprises N gain chips, and the N gain chips output N sub light beams; the N sub-beams pass through the first prism, the sub-beams emitted from the first prism converge towards a preset central axis, the sub-beams are incident to the second prism before convergence and are combined into a resonant beam through the second prism, the resonant beam resonates in a resonant cavity formed by the output coupling mirror and the chip set, and the output coupling mirror and the chip set form a resonant cavity; the output laser is emitted from the output coupling mirror; wherein N is greater than 1. The invention is beneficial for solving the problems that the power of a single chip is limited, the beam combining efficiency is low, only incoherent beam combining can be realized, and a multi-chip beam combining structure is complex.

An emitter includes a substrate; a current-blocking distributed Bragg reflector (DBR) arranged on the substrate, wherein the current-blocking DBR includes a plurality of p-n junctions connected vertically in series to form a bidirectional current-blocking structure; a bottom contact layer arranged on the current-blocking DBR; a bottom DBR arranged on the bottom contact layer; a top DBR arranged on the bottom DBR; an active region configured to generate a laser light, wherein the active region is arranged between the bottom DBR and the top DBR; a top contact layer arranged on the top DBR; and an optical output arranged over the top DBR, wherein the emitter is configured to emit the laser light via the optical output.

An optical subsystem with flat lenses for multimode transceivers is provided. The optical subsystem includes a photonic integrated circuit (PIC). The optical subsystem also includes a vertical cavity surface emitting laser (VCSEL) disposed on the PIC, a photodetector disposed on the PIC, a transmit multimode fiber (TX-MMF) disposed on the PIC, and a receiver multimode fiber (RX-MMF) disposed on the PIC. The PIC includes a substrate, an oxide layer disposed above the substrate, and a plurality of metalenses disposed in the oxide layer. The substrate includes a polymer region and a mirror disposed at a base of the polymer region.

A self-mixing interferometric laser sensor (100) comprises a vertical cavity surface emitting laser, VCSEL, (10) configured to emit laser radiation (9) with a linear polarization (90) through an emission surface (14), a first photodetector (21) configured to monitor a first part (91) of the laser radiation (9) and to output a first signal (1), a first linear polarizer (23) arranged in front of the first photodetector (21) such that the first part (91) of the laser radiation (9) passes through the linear polarizer (23) before reaching the first photodetector (21), a second photodetector (22) configured to monitor a second part (92) of the laser radiation (9) and to output a second signal (2), a second linear polarizer (24) arranged in front of the second photodetector (22) such that the second part (92) of the laser radiation (9) passes through the second linear polarizer (24) before reaching the second photodetector (22), wherein the first linear polarizer (23) is oriented at a first angle (71) with respect to the linear polarization (90) of the VCSEL (10), wherein the second linear polarizer (24) is oriented at a second angle (72) with respect to the linear polarization (90) of the VCSEL (10), wherein the first angle (71) is substantially +45° and the second angle (72) is substantially -45°.

The invention provides a light generating system (1000) comprising n first vertical cavity surface emitting lasers (110) and a control system (300), wherein n≥1, wherein each of the n first vertical cavity surface emitting lasers (110) is configured to generate first laser light (111) changing between at least two centroid wavelengths (λnc,1, λnc,2) having a wavelength difference of at least 10 nm, with a changing frequency of at least 50 Hz; wherein the control system (300) is configured to control the n first vertical cavity surface emitting lasers (110) such that system light (1001) is generated comprising the first laser light (111) of at least one of the n first vertical cavity surface emitting lasers (110), and wherein the control system (300) is configured to control a spectral power distribution of the system light (1001), wherein the system light (1001) is white light having a correlated color temperature in a range from 1800 K to 8000 K and a color rendering index of at least 70.

An electrical pumping vertical external-cavity surface-emitting laser (EP-VECSEL) device. The device includes a first reflective element and an active region comprising a plurality of emitters, disposed on the first reflective element configured to accept an electrical current at multiple emitters on the active region such that the multiple emitters produce a plurality of lasers. The multiple emitters may be configured to form a desired Hermite Gaussian (HG) mode shape. The device includes a second reflective element disposed on the active region. The device further includes an array output coupler disposed optically in line with the second reflective element such that the plurality of lasers are directed into the array output coupler.

Proposed is a lidar device. The lidar device may include a polygonal mirror rotating along a rotational axis, reflecting a laser beam provided from a side toward an object and receiving a laser beam reflected from the object. The lidar device may also include a laser emitting module including a plurality of VCSEL (Vertical Cavity Surface Emitting Laser) elements emitting a laser beam toward the polygonal mirror and arranged along the rotational axis. The lidar device may further include a metasurface forming, via a plurality of nanopillars disposed on an emission surface side of the laser emitting module, a beam of line pattern line pattern being extended along the rotational axis using the laser beam emitted from the laser emitting module. The lidar device may further include a sensor unit receiving, via the polygonal mirror, the laser beam reflected from the object.

To provide a vertical resonator surface emitting laser element that can reduce the variation in threshold current.SOLUTION: A vertical resonator surface emitting laser element includes a substrate containing GaN, an AlGaN underlayer provided on the upper surface of the substrate, a multilayer reflective layer including an AlInN layer and provided on the upper surface of the underlayer, an n-side semiconductor layer, an active layer, and a p-side semiconductor layer. The n-side semiconductor layer, active layer, and p-side semiconductor layer are provided above the multilayer reflective layer.SELECTED DRAWING: Figure 1

A bird station comprising a perching area, and a detachable electronic control module comprising: at least one of a camera unit and a microphone unit; a controller; and an object detection unit comprising a vertical cavity surface emitting laser (VCSEL). The VCSEL is operable to generate a source beam directed towards the perching area of the bird station. The object detection unit is arranged to detect a return beam formed by reflection of the source beam from an object when the object is located in the perching area of the bird station and, based on a detection of the return beam, determine that there is an object located in the perching area. The controller is operable to activate the one of the camera unit and the microphone unit in response to the object detection unit determining that there is an object located in the perching area of the bird station.

The disclosure relates to a handheld device for optoacoustic imaging of an object, wherein the device comprises: i) at least one VCSEL sensor unit comprising a vertical-cavity surface-emitting laser (VCSEL), a laser resonator and a photodiode provided in and / or at the laser resonator and being arranged and / or configured to illuminate the object with first electromagnetic radiation emerging from the laser resonator, allow second electromagnetic radiation, which has been reflected and / or scattered by the object in response to illuminating the object with the first electromagnetic radiation, to enter the laser resonator and mix and / or interfere with the first electromagnetic radiation, whereby an interference signal is obtained, and detect the interference signal with the photodiode, wherein the at least one electronic controller is configured to derive, based on the detected interference signal, positional information regarding a position and / or distance and / or movement of the at least one VCSEL sensor unit and / or the handheld device relative to the object; and / or ii) at least one vertical-cavity surface-emitting laser (VCSEL) configured to illuminate the object with first electromagnetic radiation, a detector, in particular an optical or ultrasound detector, configured to, in particular incoherently, detect a response signal, in particular an optical signal or an ultrasound signal, emanating from the object in response to illuminating the object with the first electromagnetic radiation, wherein the at least one electronic controller is configured to derive, based on the detected response signal, a time measure characterizing a duration (time of flight) it takes for the first electromagnetic radiation to travel from the VCSEL to the object and, after reflection or conversion into an ultrasound wave by the object, back to the detector, and to derive positional information regarding a height position and / or distance of the at least one VCSEL and / or handheld device relative to the object. The disclosure further relates to an according handheld device for ultrasound imaging and an according system for optoacoustic or ultrasound imaging.

Provided is a vertical cavity surface emitting laser element that includes a first substrate, a second substrate, a first DBR layer, and a second DBR layer. The first substrate is formed of a first material and includes an active layer. The second substrate is formed of a second material and is bonded to the first substrate, the second material causing light having a specific wavelength to be transmitted therethrough and being different from that of the first substrate. The first DBR layer is provided on a side of the first substrate opposite to the second substrate and reflects the light having the wavelength. The second DBR layer is provided on a side of the second substrate opposite to the first substrate and reflects the light having the wavelength.

A method of accounting for signal noise in a hybrid laser system is described. The hybrid laser system includes a high reflectivity mirror, a nitrogen-vacancy center diamond, a microwave antenna, a dichroic mirror, a half-vertical cavity surface emitting laser (VCSEL), a birefringent filter, an etalon, an output coupler, and a photodiode. The method includes: measuring a shift in a left-hand side frequency as related to an optically detected magnetic resonance (ODMR) frequency peak of an ODMR signal; measuring a shift in a right-hand side frequency as related to the ODMR frequency peak; normalizing the shift in the left-hand side frequency; normalizing the shift in the right-hand side frequency; and comparing the shift in the left-hand side frequency to the shift in the right-hand side frequency to determine a technical noise associated with the ODMR signal.

A vertical cavity surface emitting laser, and a preparation method therefor. The preparation method comprises: S1: providing a substrate (10); S2: sequentially growing on the substrate (10) a buffer layer (20), an N-type DBR (30), an N-spacer layer (40), a multi-quantum well layer (50), a P-spacer layer (60), a thin layer (70) and a first P‑GaAs layer (81); S3: growing a plurality of parallel AlAs nanowires (82); S4: growing a second P‑GaAs layer (83) on the AlAs nanowires (82); S5: repeating S3-S4 so as to form a P-type DBR, wherein the P-type DBR comprises the first P‑GaAs layer (81), the AlAs nanowires (82) and the second P‑GaAs layer (83); S6: etching the P-type DBR to form a plurality of columnar structures; S7: using an HF solution to corrode the AlAs nanowires (82), so as to obtain a plurality of linear cavities (84); and S8: depositing a first electrode (91) and a second electrode (92), so as to obtain a vertical cavity surface emitting laser. In the preparation method, a nanowire array structure is prepared by means of laser-induced thin film deposition, and in combination with a selective corrosion process, the dependence on growth processes and devices can be reduced, thereby lowering the process barrier, improving the preparation efficiency and achieving low production costs.

In some implementations, a VCSEL device includes a substrate having a first surface and a second surface opposite the first surface. The VCSEL device may include a VCSEL array including a plurality of VCSELs disposed on the first surface of the substrate. The plurality of VCSELs may be configured for backside emission through the substrate. Respective emission areas for the plurality of VCSELs may be defined on the second surface of the substrate. The respective emission areas may define a perimeter of an emission region of the VCSEL device. The VCSEL device may include an anti-reflection (AR) coating on the second surface of the substrate. The VCSEL device may include a plurality of dummy posts disposed on the AR coating. The plurality of dummy posts may be positioned within the emission region, outside of the respective emission areas for the plurality of VCSELs.

In some implementations, an optical system may include an optical emitter configured to emit a beam, wherein the optical emitter is a vertical cavity surface emitting laser (VCSEL), and wherein the VCSEL is a top-emitting VCSEL or a bottom-emitting VCSEL. The optical system may include a liquid crystal component, the liquid crystal component being disposed on a surface of the optical emitter. The optical system may include a control component.

Non-invasive in vivo measurement, by Raman spectroscopy, of analyte e.g. glucose present in e.g. interstitial fluid in the skin of a subject. A plurality of vertical-cavity surface-emitting lasers (VC

Spontaneous and stimulated emission devices such as edge emitting laser diodes and vertical cavity surface emitting lasers operating in the visible spectrum and in the infrared spectrum between 380 mm and 1600 nm, and to the application of the light-emitting devices are disclosed. The devices are based on relaxed InGaN to provide strain-balanced epitaxial layer stacks.

An optical device may include a substrate including a conductive core, a first layer stack on a first surface of the conductive core, a conductor-filled trench extending through the first layer stack to the conductive core such that the conductor-filled trench is on the first surface of the conductive core, and a second layer stack on a second surface of the conductive core. The optical device may include a vertical-cavity surface-emitting laser (VCSEL) chip above the conductor-filled trench. The VCSEL chip may include an array of VCSELs. A size of the conductor-filled trench may match a size of the VCSEL chip, match a size of an emission region of the array of VCSELs, or be greater than the size of the emission region of the array of VCSELs and less than the size of the VCSEL chip.

A method for physical random number generation includes the steps of: modulating the gain of a vertical-cavity surface-emitting laser periodically from the lower threshold to the upper threshold and back; maintaining the gain per round trip positive for a longer period than the round trip time of the cavity; maintaining the net gain per round trip negative for a longer period than the round trip time of the cavity, in order to create optical pulses of random amplitude; detecting the optical pulses; converting the optical pulses into electrical analog pulses; and digitising the electrical analog pulses into random numbers.

A measurement system comprising one or more semiconductor diodes configured to penetrate tissue comprising skin. The detection system comprising a camera, which may also include a direct or indirect time-of-flight sensor. The detection system synchronized to the pulsing of the semiconductor diodes, and the camera further coupled to a processor. The detection system non-invasively measuring blood within the skin, measuring hemoglobin absorption between 700 to 1300 nm, and the processor deriving physiological parameters and comparing properties between different spatial locations and variation over time. The semiconductor diodes may comprise vertical cavity surface emitting lasers, and the detection system may comprise single photon avalanche photodiodes. The measurement system may be used to observe eye parameters and differential blood flow. The system may be used with photo-bio-modulation therapy, or it may be used in advanced driver monitoring systems for multiple functions including head pose, eye tracking, facial authentication, and smart restraint control systems.

The invention provides a driving circuit. The output end of a bias current control sub-circuit is connected with the output end of an output driving sub-circuit and a driven element; the output driving sub-circuit comprises a differential pair module circuit, a source electrode of a PMOS transistor is connected with a power supply, and a drain electrode of the PMOS transistor is connected with a load resistor RL1 and a load resistor RL2 to form an intersection point; the end, close to a driven element, of the load resistor RL2 is the output end of the output driving sub-circuit and connected with one end of the load resistor Rf, and the end, away from the load resistor RL2, of the load resistor Rf is connected with the first input end of the first operational amplifier. The end, close to the PMOS transistor, of the load resistor RL1 is connected with one end of the load resistor Rref, and the end, away from the load resistor RL1, of the load resistor Rref is connected with the second input end of the first operational amplifier and connected with a first current source. The output end of the first operational amplifier is connected with the grid electrode of the PMOS transistor. The invention provides an optimized driving circuit which can realize higher-speed optical communication application.

A vertical cavity surface emitting laser device includes: an optical resonator; a photodiode; and a contact arrangement. The optical resonator includes: two distributed Bragg reflectors (DBRs) and an active region between the DBRs. The photodiode has a light absorption region in the optical resonator. The contact arrangement provides drive current to pump the optical resonator, and contacts the photodiode. The active region has an InxGa1-xAs layer, where 0≤x<1. The light absorption region has an InyGa1-yAs layer, where 0<y<1, and y>x. The InyGa1-yAs layer is an intrinsic layer of the light absorption region. The InyGa1-yAs layer is 15-50 nm thick. The light absorption region has an undoped layer with a material different from the InyGa1-yAs layer. The InyGa1-yAs layer is immediately adjacent to the undoped layer. An intrinsic zone of the light absorption region is at least 70 nm thick.

A Provided is a light-emitting element array that includes a plurality of light-emitting elements two-dimensionally arranged on a light-emitting element surface of the light-emitting element array, each of the plurality of light-emitting elements being a vertical cavity surface emitting laser and being formed in a mesa shape surrounded by a recessed portion formed in the light-emitting element surface, an inclined surface being formed on an outer periphery of a light-emitting element group including the plurality of light-emitting elements, a depth of the recessed portion from the light-emitting element surface gradually increasing as away from the light-emitting element group.

An optoelectronic device includes an array of vertical-cavity surface-emitting lasers (VCSELs) formed on a common substrate. Each VCSEL of the array include a first reflector structure formed above the substrate; a second reflector structure formed above the substrate; an active region formed above the substrate between the first reflector structure and the second reflector structure including one or more multiple-quantum- wells (MQWs) regions, one or more oxide layers defining an aperture region; and a grating layer formed on the first reflector structure. The grating layer includes gratings that extend parallel along a first direction in a first plane that is parallel to a top surface of the first reflector structure. For each VCSEL of the VCSEL array, a height of its gratings in the grating layer of VCSEL is a function of a position of the respective VCSEL.

An electronic device includes a self -mixing interferometer (SMI) sensor. The SMI sensor includes a vertical cavity surface emitting laser (VCSEL) configured to output optical light toward a user or object. The VCSEL includes: a. semiconductor substrate; a first reflector structure formed above a first surface of the semiconductor substrate; a second reflector structure formed above the first surface of the semiconductor substrate; a. Fabry-Perot Cavity including an active region arranged, between the first reflector structure and the second reflector structure; a mode filter cap layer formed on or over a first surface of the first reflector structure facing away from the semiconductor substrate. The SMI sensor further includes a detector configured detect self-mixing interferometer (SMI) signals formed in the Fabry-Perot Cavity and further configured to generate electrical signals based on the detected reflected optical light.

Embodiments of the present disclosure generally relate to a vertical cavity surface emitting laser, a head gimbal assembly for mounting a vertical cavity surface emitting laser, and devices incorporating such articles. In an embodiment, a vertical cavity surface emitting laser (VCSEL) device is provided. The VCSEL device includes a chip for mounting on a slider and two laser diode electrodes. The chip has six surfaces, wherein a first surface of the chip is for facing the slider, a second surface of the chip is opposite the first surface, and the two laser diode electrodes are positioned in any combination on one or more of a third surface, a fourth surface, a fifth surface, or a sixth surface of the chip.

The present invention provides a drive circuit, wherein the output end of a bias current control subcircuit is connected to the output end of an output drive subcircuit and a driven element; the output drive subcircuit includes a differential pair module circuit, wherein the source of a PMOS transistor is connected to a power supply, and the drain is connected to load resistors RL1 and RL2, forming a junction; the end of load resistor RL2 closest to the driven element serves as the output end of the output drive subcircuit and is connected to one end of load resistor Rf; the end of load resistor Rf remote from load resistor RL2 is connected to the first input end of a first operational amplifier; the end of load resistor RL1 closest to the PMOS transistor is connected to one end of load resistor Rref; the end of load resistor Rref remote from load resistor RL1 is connected to the second input end of the first operational amplifier and to a first current source; the output end of the first operational amplifier is connected to the gate of the PMOS transistor. The present invention provides an optimized drive circuit capable of achieving higher-speed optical communication applications.