42 results about "Vertical-external-cavity surface-emitting-laser" patented technology

The invention relates to the technical field of lasers, in particular to a multi-chip vertical external cavity surface emitting laser which comprises a chip set, a first prism, a second prism and an output coupling mirror which are sequentially arranged along a preset central axis. The chipset comprises N gain chips, and the N gain chips output N sub light beams; the N sub-beams pass through the first prism, the sub-beams emitted from the first prism converge towards a preset central axis, the sub-beams are incident to the second prism before convergence and are combined into a resonant beam through the second prism, the resonant beam resonates in a resonant cavity formed by the output coupling mirror and the chip set, and the output coupling mirror and the chip set form a resonant cavity; the output laser is emitted from the output coupling mirror; wherein N is greater than 1. The invention is beneficial for solving the problems that the power of a single chip is limited, the beam combining efficiency is low, only incoherent beam combining can be realized, and a multi-chip beam combining structure is complex.

The disclosure relates to a handheld device for optoacoustic imaging of an object, wherein the device comprises: i) at least one VCSEL sensor unit comprising a vertical-cavity surface-emitting laser (VCSEL), a laser resonator and a photodiode provided in and / or at the laser resonator and being arranged and / or configured to illuminate the object with first electromagnetic radiation emerging from the laser resonator, allow second electromagnetic radiation, which has been reflected and / or scattered by the object in response to illuminating the object with the first electromagnetic radiation, to enter the laser resonator and mix and / or interfere with the first electromagnetic radiation, whereby an interference signal is obtained, and detect the interference signal with the photodiode, wherein the at least one electronic controller is configured to derive, based on the detected interference signal, positional information regarding a position and / or distance and / or movement of the at least one VCSEL sensor unit and / or the handheld device relative to the object; and / or ii) at least one vertical-cavity surface-emitting laser (VCSEL) configured to illuminate the object with first electromagnetic radiation, a detector, in particular an optical or ultrasound detector, configured to, in particular incoherently, detect a response signal, in particular an optical signal or an ultrasound signal, emanating from the object in response to illuminating the object with the first electromagnetic radiation, wherein the at least one electronic controller is configured to derive, based on the detected response signal, a time measure characterizing a duration (time of flight) it takes for the first electromagnetic radiation to travel from the VCSEL to the object and, after reflection or conversion into an ultrasound wave by the object, back to the detector, and to derive positional information regarding a height position and / or distance of the at least one VCSEL and / or handheld device relative to the object. The disclosure further relates to an according handheld device for ultrasound imaging and an according system for optoacoustic or ultrasound imaging.

Provided is a vertical cavity surface emitting laser element that includes a first substrate, a second substrate, a first DBR layer, and a second DBR layer. The first substrate is formed of a first material and includes an active layer. The second substrate is formed of a second material and is bonded to the first substrate, the second material causing light having a specific wavelength to be transmitted therethrough and being different from that of the first substrate. The first DBR layer is provided on a side of the first substrate opposite to the second substrate and reflects the light having the wavelength. The second DBR layer is provided on a side of the second substrate opposite to the first substrate and reflects the light having the wavelength.

A method of accounting for signal noise in a hybrid laser system is described. The hybrid laser system includes a high reflectivity mirror, a nitrogen-vacancy center diamond, a microwave antenna, a dichroic mirror, a half-vertical cavity surface emitting laser (VCSEL), a birefringent filter, an etalon, an output coupler, and a photodiode. The method includes: measuring a shift in a left-hand side frequency as related to an optically detected magnetic resonance (ODMR) frequency peak of an ODMR signal; measuring a shift in a right-hand side frequency as related to the ODMR frequency peak; normalizing the shift in the left-hand side frequency; normalizing the shift in the right-hand side frequency; and comparing the shift in the left-hand side frequency to the shift in the right-hand side frequency to determine a technical noise associated with the ODMR signal.

A vertical cavity surface emitting laser, and a preparation method therefor. The preparation method comprises: S1: providing a substrate (10); S2: sequentially growing on the substrate (10) a buffer layer (20), an N-type DBR (30), an N-spacer layer (40), a multi-quantum well layer (50), a P-spacer layer (60), a thin layer (70) and a first P‑GaAs layer (81); S3: growing a plurality of parallel AlAs nanowires (82); S4: growing a second P‑GaAs layer (83) on the AlAs nanowires (82); S5: repeating S3-S4 so as to form a P-type DBR, wherein the P-type DBR comprises the first P‑GaAs layer (81), the AlAs nanowires (82) and the second P‑GaAs layer (83); S6: etching the P-type DBR to form a plurality of columnar structures; S7: using an HF solution to corrode the AlAs nanowires (82), so as to obtain a plurality of linear cavities (84); and S8: depositing a first electrode (91) and a second electrode (92), so as to obtain a vertical cavity surface emitting laser. In the preparation method, a nanowire array structure is prepared by means of laser-induced thin film deposition, and in combination with a selective corrosion process, the dependence on growth processes and devices can be reduced, thereby lowering the process barrier, improving the preparation efficiency and achieving low production costs.

In some implementations, a VCSEL device includes a substrate having a first surface and a second surface opposite the first surface. The VCSEL device may include a VCSEL array including a plurality of VCSELs disposed on the first surface of the substrate. The plurality of VCSELs may be configured for backside emission through the substrate. Respective emission areas for the plurality of VCSELs may be defined on the second surface of the substrate. The respective emission areas may define a perimeter of an emission region of the VCSEL device. The VCSEL device may include an anti-reflection (AR) coating on the second surface of the substrate. The VCSEL device may include a plurality of dummy posts disposed on the AR coating. The plurality of dummy posts may be positioned within the emission region, outside of the respective emission areas for the plurality of VCSELs.

Non-invasive in vivo measurement, by Raman spectroscopy, of analyte e.g. glucose present in e.g. interstitial fluid in the skin of a subject. A plurality of vertical-cavity surface-emitting lasers (VC

Spontaneous and stimulated emission devices such as edge emitting laser diodes and vertical cavity surface emitting lasers operating in the visible spectrum and in the infrared spectrum between 380 mm and 1600 nm, and to the application of the light-emitting devices are disclosed. The devices are based on relaxed InGaN to provide strain-balanced epitaxial layer stacks.

A Provided is a light-emitting element array that includes a plurality of light-emitting elements two-dimensionally arranged on a light-emitting element surface of the light-emitting element array, each of the plurality of light-emitting elements being a vertical cavity surface emitting laser and being formed in a mesa shape surrounded by a recessed portion formed in the light-emitting element surface, an inclined surface being formed on an outer periphery of a light-emitting element group including the plurality of light-emitting elements, a depth of the recessed portion from the light-emitting element surface gradually increasing as away from the light-emitting element group.

An optoelectronic device includes an array of vertical-cavity surface-emitting lasers (VCSELs) formed on a common substrate. Each VCSEL of the array include a first reflector structure formed above the substrate; a second reflector structure formed above the substrate; an active region formed above the substrate between the first reflector structure and the second reflector structure including one or more multiple-quantum- wells (MQWs) regions, one or more oxide layers defining an aperture region; and a grating layer formed on the first reflector structure. The grating layer includes gratings that extend parallel along a first direction in a first plane that is parallel to a top surface of the first reflector structure. For each VCSEL of the VCSEL array, a height of its gratings in the grating layer of VCSEL is a function of a position of the respective VCSEL.

An electronic device includes a self -mixing interferometer (SMI) sensor. The SMI sensor includes a vertical cavity surface emitting laser (VCSEL) configured to output optical light toward a user or object. The VCSEL includes: a. semiconductor substrate; a first reflector structure formed above a first surface of the semiconductor substrate; a second reflector structure formed above the first surface of the semiconductor substrate; a. Fabry-Perot Cavity including an active region arranged, between the first reflector structure and the second reflector structure; a mode filter cap layer formed on or over a first surface of the first reflector structure facing away from the semiconductor substrate. The SMI sensor further includes a detector configured detect self-mixing interferometer (SMI) signals formed in the Fabry-Perot Cavity and further configured to generate electrical signals based on the detected reflected optical light.

Embodiments of the present disclosure generally relate to a vertical cavity surface emitting laser, a head gimbal assembly for mounting a vertical cavity surface emitting laser, and devices incorporating such articles. In an embodiment, a vertical cavity surface emitting laser (VCSEL) device is provided. The VCSEL device includes a chip for mounting on a slider and two laser diode electrodes. The chip has six surfaces, wherein a first surface of the chip is for facing the slider, a second surface of the chip is opposite the first surface, and the two laser diode electrodes are positioned in any combination on one or more of a third surface, a fourth surface, a fifth surface, or a sixth surface of the chip.

A light emitting device includes a substrate, a first light emitting element arranged on the substrate, a second light emitting element arranged on the substrate, and a wiring layer arranged over the first light emitting element and the second light emitting element. Each of the first light emitting element and the second light emitting element is a vertical cavity surface emitting laser (VCSEL) element. The first light emitting element is configured to emit light by being supplied with electric power from the wiring layer. The second light emitting element is configured such that electric power for causing the second light emitting element to emit light is not supplied from the wiring layer to the second light emitting element.

A vertical-cavity surface-emitting laser includes a first reflector connected to a first semiconductor substrate, a second reflector, and an active region including a quantum well structure for emitting light. The active region is located in series between the first reflector and the second reflector. The first reflector is located in series between the first semiconductor substrate and the active region. A surface of an outer face of the first semiconductor substrate that faces away from the first reflector has an orientation mark that is configured so as to define a position of the vertical-cavity surface-emitting laser in a plane in parallel with the outer face of the first semiconductor substrate.

Techniques for realizing compound semiconductor (CS) optoelectronic devices on silicon (Si) substrates for mobile applications are disclosed. The integration platform is based on heteroepitaxy of CS materials and device structures on Si by direct heteroepitaxy on planar Si substrates or by selective area heteroepitaxy on dielectric patterned Si substrates. Following deposition of the CS device structures, device fabrication steps can be carried out using Si complimentary metal-oxide semiconductor (CMOS) fabrication techniques to enable large-volume manufacturing. The integration platform can enable manufacturing of optoelectronic devices including photodetector arrays for image sensors and vertical cavity surface emitting laser arrays. Such devices can be used in various applications including light detection and ranging (LIDAR) systems for mobile devices such as smart phones and tablets, and for other perception applications such as industrial vision, artificial intelligence (AI), augmented reality (AR) and virtual reality (VR).

The invention relates to independent control of polarization orientation and optical mode of a vertical cavity surface emitting laser. In some embodiments, a VCSEL includes a first cap layer and a second cap layer. The first cap layer includes a semiconductor material and is disposed over the confinement hole of the VCSEL. The second cap layer includes a dielectric material and is disposed over the confinement hole of the VCSEL. A polarizing filter structure is formed in the first cap layer. A mode filter structure is formed in the second cap layer.

A charged inductive laser driver may be configured to provide a pre-emphasized current to a first laser load and a second laser load, wherein the pre-emphasized current is configured to achieve a square pulse as a combined output of the first laser load and the second laser load.

An optoelectronic assembly includes a printed circuit board (PCB), an integrated circuit (IC) substrate operably mounted on the PCB, the IC substrate comprising at least one of active elements and passive elements, a vertical-cavity surface-emitting laser (VCSEL) operably mounted on a first surface of the IC substrate, an optical detector operably mounted adjacent to the VCSEL on the first surface of the IC substrate, and a molding compound formed on the IC substrate encapsulating a plurality of sides of the VCSEL and a plurality of sides of the optical detector, in which at least one electrical communication path between the optical detector and the VCSEL is confined within the IC substrate.

Circuits, such as chiplets and memory devices, and surface-emitting light sources, such as vertical-cavity surface-emitting lasers (VCSELs), are bonded to a front side of a photonic wafer-scale interposer (PWSI). The PWSI includes waveguides for communication among the circuits, memory devices, and surface-emitting light sources. Memory devices are grouped by a memory fabric, resulting in a disaggregated memory structure. A first circuit accesses memory. The accessing is based on the disaggregated memory structure. The accessing can include sending electrical data by the first circuit to a first surface-emitting light source. A degree of freedom (DoF) of a light beam emitted by the first surface-emitting light source can be modulated. The emitted light beam can comprise a degree of freedom modulated beam (DFMB) that is based on the sent electrical data. The memory fabric can allocate memory based on memory needs of the first circuit.

An optoelectronic apparatus is adapted to generate a structured light pattern. The optoelectronic apparatus has: a first array of vertical cavity surface emitting lasers (VCSELs); a first homogenization optics arrangement associated with the first array of VCSELs; a second array of VCSELs; a second homogenization optics arrangement associated with the second array of VCSELs; and a pattern optics arrangement configured to generate a structured light pattern based on a common homogeneous intensity distribution in an intermediate plane. The first homogenization optics arrangement and the second homogenization, each associated with a different one of the first array of VCSELs or the second array of VCSELs, are arranged such that their intensity distributions add up to the common homogeneous top-hat intensity distribution in the intermediate plane.

The invention is entitled "VCSEL array for HAMR." The present disclosure relates to the pre-processing of a magnetic recording head for a magnetic media drive. For a heat-assisted magnetic recording (HAMR) head, an optical source provides the heat necessary for the drive operation. A vertical cavity surface emitting laser (VCSEL) is mounted to the top surface of the slider. A plurality of laser beams are emitted from the bottom surface of the VCSEL and are directed to a corresponding number of waveguide structures within the HAMR head. The waveguide structures feed into a multimode interference (MMI) device which then directs the laser light into a single waveguide to be focused on a near-field transducer (NFT). The VCSEL laser is phase coherent and does not have mode hopping.

A photonic integrated circuit including a first 4f system, a leader laser, a first diffractive optical element, a second 4f system, a plurality of first vertical-cavity surface-emitting lasers, a plurality of second vertical-cavity surface-emitting lasers, a plurality of second diffractive optical elements, a third diffractive optical element and a plurality of detectors is provided. The leader laser is disposed at the object plane of the first 4f system. The first diffractive optical element is disposed at the pupil plane of the first 4f system. The plurality of first vertical-cavity surface-emitting lasers and the plurality of second vertical-cavity surface-emitting lasers are disposed at the object plane of the second 4f system. The plurality of second diffractive optical elements and the third diffractive optical element are disposed at the pupil plane of the second 4f system. The plurality of detectors are disposed at the image plane of the second 4f system.

A system and method for the addition of heat transfer particles in a vertical cavity surface emitting laser (VCSEL) are disclosed. The method may include adding a plurality of nanoparticles to a passivation material. The plurality of nanoparticles may have a thermal conductivity of less than 2,200 Watts per meter-Kelvin (W / m-K) at zero degrees Kelvin. The method may also include forming a passivation layer between an active region and a contact in a vertical cavity surface emitting laser. The passivation layer may include the passivation material and the plurality of nanoparticles.

Aspects of the present disclosure include spatially distributed depth sensor arrays for vehicle sensing. An example spatially distributed depth sensor array includes a 1 x N array of unit cells. Each unit cell includes a receiving pixel having at least one single photon avalanche photodiode (SPAD) vertically stacked above at least one time-to-digital converter (TDC), a transmitting pixel having at least one vertical cavity surface emitting laser (VCSEL), and a backplane. The receiving pixel and the transmitting pixel are integrated onto a surface of the backplane to define a respective unit cell. The backplane is configured to receive a time-of-flight (TOF) signal from the at least one SPAD in response to detecting a photon emitted from the at least one VCSEL.

In some implementations, a vertical cavity surface emitting laser (VCSEL) device may include a substrate, and a set of epitaxial layers, disposed on the substrate, defining a plurality of VCSEL mesa structures, where each of the plurality of VCSEL mesa structures has a top surface and a sidewall. The VCSEL device may include an additional layer structure disposed on the set of epitaxial layers, where the additional layer structure configures the plurality of VCSEL mesa structures into a set of emitting VCSEL structures, for backside emission through the substrate, and a set of non-emitting VCSEL structures. The additional layer structure may include a first contact layer on the set of epitaxial layers at a base of the plurality of VCSEL mesa structures and surrounding each of the plurality of VCSEL mesa structures, and a second contact layer on top surfaces of the set of emitting VCSEL structures.

A method for manufacturing a distributed Bragg reflector. The distributed Bragg reflector is applied to a 1550 nm vertical-cavity surface-emitting laser, which structurally includes a top distributed Bragg reflector, a bottom distributed Bragg reflector, and a vertical cavity (including a P-type and an N-type electrode) and a multiple quantum well light-emitting layer that are positioned therebetween. An optical multilayer film of the distributed Bragg reflector is formed by sputtering, and includes silicon layers and silicon dioxide layers alternately stacked to each other. The silicon dioxide layers are produced by a process of nano-sputtering and micro-plasma oxidation. A reflectance of the bottom distributed Bragg reflector at 1,550 nm is greater than 99.9%, and a reflectance of the top distributed Bragg reflector at 1,550 nm is controlled to be between 95% and 99%, so that basic physical / optical requirements for forming a resonant laser can be improved.

A laser assembly includes a vertical cavity surface emitting laser and a resonant cavity extension. The resonant cavity extension is defined by two separate portions. A first portion may be formed from gallium arsenide and can define a microlens. A silicon dioxide layer can be disposed over the first portion and may be polished to a flat, planar surface. Reflective layers may interpose the first portion and second portion of the resonant cavity extension, and a reflective layer may be disposed over the planar surface. As a result of this construction, an extended cavity vertical surface emitting laser can be defined that is resistant to mode hopping and exhibits improved coherence length, beam divergence (high numerical aperture), and beam quality.

Techniques for realizing compound semiconductor (CS) optoelectronic devices on silicon (Si) substrates are disclosed. The integration platform is based on heteroepitaxy of CS materials and device structures on Si by direct heteroepitaxy on planar Si substrates or by selective area heteroepitaxy on dielectric patterned Si substrates. Following deposition of the CS device structures, device fabrication steps can be carried out using Si complimentary metal-oxide semiconductor (CMOS) fabrication techniques to enable large-volume manufacturing. The integration platform can enable manufacturing of optoelectronic module devices including photodetector arrays for image sensors and vertical cavity surface emitting laser arrays. Such module devices can be used in various applications including light detection and ranging (LIDAR) systems for automotive and robotic vehicles as well as mobile devices such as smart phones and tablets, and for other perception applications such as industrial vision, artificial intelligence (AI), augmented reality (AR) and virtual reality (VR).

Spontaneous and stimulated emission devices such as edge emitting laser diodes and vertical cavity surface emitting lasers operating in the visible spectrum and in the infrared spectrum between 380 nm and 1600 nm, and to the application of the light-emitting devices are disclosed. The devices are based on relaxed InGaN to provide strain-balanced epitaxial layer stacks.