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Low noise sensor amplifiers and trans-impedance amplifiers using complementary pair of current injection field-effect transistor devices

A technology of field effect transistors and complementary pairs, applied in low noise amplifiers, DC coupled DC amplifiers, amplifier input/output impedance improvement, etc., can solve radiation and other problems

Pending Publication Date: 2019-08-23
CIRCUIT SEED LLC
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the system under consideration is an electronic circuit, most of the projected power travels through its wires, and some may radiate

Method used

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  • Low noise sensor amplifiers and trans-impedance amplifiers using complementary pair of current injection field-effect transistor devices
  • Low noise sensor amplifiers and trans-impedance amplifiers using complementary pair of current injection field-effect transistor devices
  • Low noise sensor amplifiers and trans-impedance amplifiers using complementary pair of current injection field-effect transistor devices

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Embodiment Construction

[0037] reference Figure 2a with 2b According to a preferred embodiment of the present invention, it provides a current injection field effect transistor (or iFET) 200, which is an enhancement type MOSFET and is composed of a substrate 26a or 26b, a source terminal 24a or 24b, and a drain terminal 29a or 29b, It defines two channels 23a and 25a, or 23b and 25b between them on the substrate 26a or 26b, respectively. Usually the first (source channel 23a or 23b) is connected to a power source (not shown) and the second (Drain channel 25a or 25b) is connected to a load (not shown). The substrate 26a or 26b is N-type or P-type. Two channels, the source and drain channels 23a and 25a, or 23b and 25b are connected to each other at the iPort control terminal 21a or 21b, respectively, as Figure 2a with 2b As shown, and channels 23a and 25a, or 23b and 25b share a common gate control terminal 27a or 27b. This configuration means that the iFET structure 200 has more than one control in...

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Abstract

This invention relates to low noise sensor amplifiers and trans-impedance amplifiers using a complementary pair of current injection field effect transistor (iFET) devices (CiFET). CiFET includes an N-type current field-effect transistor (NiFET) and a P-type current field-effect transistor (PiFET), each of the NiFET and PiFET has a source, a drain, a gate, and a diffusion (current injection) terminal (iPort). Each iFET also has a source channel with a width and a length between the source and diffusion terminal, and drain channel with a width and a length between the drain and the diffusion terminal. A trans-impedance of the CiFET device is adjusted by a ratio of width / length of source channel over width / length of drain channel of the iFET and supply power voltage. In one configuration, the gate terminals of the NiFET and PiFET are connected together to form a common gate. In another configuration that common gate is configured as a voltage input for a high input impedance mode. Output voltage swings around a common mode voltage.

Description

[0001] Cross reference [0002] This application claims the priority of U.S. Provisional Application No. 62 / 425,642 filed on November 23, 2016, the content of which is incorporated herein by reference in its entirety. Technical field [0003] The present invention relates to a low noise sensor amplifier and a transimpedance amplifier using complementary pairs of current injection field effect transistor devices. Background technique [0004] All signal sources function by projecting energy into their surrounding environment. If the system under consideration is an electronic circuit, most of the projected power propagates through its wires, and some may radiate. If the system under consideration is a volume conductor, the energy projected into it will move quickly throughout the medium, such as an antenna projecting radio signals into space. If the system is mechanical, the energy flux can move from one point to another in the form of waves. Whether the system is electronic, flui...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/26H03F3/45
CPCH03F1/086H03F1/26H03F3/45179H03F3/45475H03F2200/294H03F2200/451H03F1/56H01L29/78H01L27/092H01L27/088H01L21/823814H01L29/423H03F3/45183
Inventor S·M·朔贝尔R·C·朔贝尔T·R·哈德里克
Owner CIRCUIT SEED LLC
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