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P electrode structure on light exit side of LED

A technology of light-emitting diode and electrode structure, which is applied to circuits, electrical components, semiconductor devices, etc., and can solve problems such as inability to implement low-voltage driving.

Inactive Publication Date: 2004-02-04
SUMITOMO ELECTRIC IND LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

As a result, low voltage drive cannot be implemented

Method used

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  • P electrode structure on light exit side of LED
  • P electrode structure on light exit side of LED
  • P electrode structure on light exit side of LED

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Embodiment Construction

[0110] Specific embodiments of the present invention will be described below with reference to the drawings. The same numerals or symbols in each figure denote the same components to avoid repeated explanations. The dimensional ratios in the drawings do not necessarily agree with those described. [a. Material of light-emitting element]

[0111] The present invention aims to improve LEDs using ZnSe or GaN, which have a wide bandgap and exhibit high resistivity even when deposited with impurities due to the lack of charge carriers. [b. Shape of electrode]

[0112] The present invention aims to improve the shape of the p-electrode from which light emerges. [c.p-type contact layer]

[0113] With wide bandgap semiconductors such as ZnSe or GaN, p-type impurities are not easily deposited. Even when deposition is achieved satisfactorily, the activity ratio is low, and in many cases, not many positive holes are excited from the acceptor. Therefore, the number of p-type carriers ...

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Abstract

A structure of a p-electrode formed at the light-emerging side of an LED that comprises (a) an n-type semiconductor substrate, (b) an n-type cladding layer, an active layer, a p-type cladding layer, and a p-type contact layer formed on the substrate in this order, and (c) an n-electrode formed on the back face of the substrate. The structure of the p-electrode comprises a mesh-shaped semi-transparent thin-film metal electrode for diffusing electric current formed on the p-type contact layer and a bonding electrode for wire bonding. The metal electrode comprises a covering portion having a transmittance of at least 10% and an opening portion having an opening ratio of at least 20%. The bonding electrode is formed at the periphery of the p-type contact layer and is bonded directly to the mesh-shaped semi-transparent thin-film metal electrode. This structure can increase the intensity of the output light emerging from the p-side.

Description

technical field [0001] The present invention relates to the P-electrode structure on the light-emitting side of a light-emitting diode, and in particular, to an improved P-electrode structure so as not to hinder the passage of light in a light-emitting diode using a wide bandgap semiconductor such as ZnSe or GaN. Background technique [0002] A light emitting diode (hereinafter referred to as LED) has an n-electrode on one of its two main surfaces (top and bottom surfaces) and a p-electrode on the other surface. In the case of surface-illuminated LEDs, any surface can be used as the light exit surface. The requirement is that the electrodes, usually made of metal, do not impede the passage of light. [0003] LEDs such as AlGaAs-based LEDs have a structure in which a p-type GaAs contact layer of sufficient conductivity is provided on a pn junction, and a p-electrode in a small-area point shape or a ring is provided on the contact layer. The narrower p-electrode is also refe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/06H01L33/12H01L33/28H01L33/32H01L33/38H01L33/42
CPCH01L33/28H01L33/32H01L33/38
Inventor 片山浩二
Owner SUMITOMO ELECTRIC IND LTD
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