The invention discloses a growth method for improving epitaxial
doping concentration stability of
silicon carbide and an epitaxial
wafer. The growth method comprises the following steps: S1, performing high
vacuum pumping and low-temperature baking treatment on a reaction cavity; s2, conveying the substrate into a reaction cavity, heating and depressurizing the reaction cavity, and introducing
hydrogen into the reaction cavity; s3, introducing
hydrogen and HCl gas into the reaction cavity, and performing in-situ
etching on the
silicon carbide substrate; s4, introducing
hydrogen and a
carbon source into the reaction cavity, and adjusting the temperature of the reaction cavity to an epitaxial temperature; s5, introducing a
silicon source, a
carbon source, hydrogen and a
doping source
ammonia gas into the reaction cavity, and growing a buffer layer; s6, increasing the introduction amount of the silicon source, the
carbon source, the hydrogen and the
doping source
ammonia gas, adjusting the carbon-silicon ratio, and growing a main epitaxial layer; s7, introducing hydrogen into the reaction cavity, and performing low-temperature baking and
etching; and S8, after epitaxial growth is completed, closing the reaction gas, cooling and boosting, and taking out the
silicon carbide epitaxial
wafer.