This invention relates to a
MOSFET with a
trench gate structure on a GaN substrate and a method for fabricating the same, comprising: fabricating a GaN epitaxial layer on a GaN substrate; selectively
etching the GaN epitaxial layer to form a trench structure; depositing a first insulating
dielectric layer; growing a first
metal gate on the first insulating
dielectric layer in the trench structure; growing a second insulating
dielectric layer on the first
metal gate; selectively
etching away the second insulating
dielectric layer except for the area above the first
metal gate and the area of the first insulating
dielectric layer except for the area around the first
metal gate; depositing
silicon dioxide to simultaneously form a sidewall structure on the inner wall of the trench structure, an isolation
dielectric layer on the second insulating dielectric layer, and a
surface preparation layer of the GaN epitaxial
layers on both sides of the trench structure; growing a second
metal gate on the isolation dielectric layer;
ion implantation on the GaN epitaxial
layers on both sides of the trench structure to form source and drain regions, and fabricating contact electrodes
and gate electrodes; and fabricating a surface
passivation layer, with the contact electrodes
and gate electrodes exposed on the surface
passivation layer.