The invention discloses a
wafer level
package thermal wind sensor based on an
anodic bonding technology which comprises the following steps: step 1, preparation of
silicon chips, manufacturing a
heating element, a
thermal sensing temperature measuring element and an electric extraction pad by utilizing a standard
CMOS (complementary
metal-
oxide-
semiconductor transistor) technology, and
etching off an
oxide layer at the
anodic bonding area at the front surface of the
silicon chip by utilizing an MEMS (micro electro mechanical systems)
dry etching technology, so that a
silicon substrate is exposed; step 2, preparation of packaging glass substrate, preparing bosses for
anodic bonding by utilizing an anodic bonding technology, and preparing a through hole for electric extraction by utilizing a
laser etching technology; step 3, carrying out bonding packaging on the silicon chips and packaged glass substrate by utilizing the anodic bonding technology; step 4, carrying out
thinning on the substrate of the silicon chips by utilizing a
thinning technology; step 5, sticking and sealing a
ceramic sensing substrate on the back face of the pair of thinned chips; and step 6, scribing and finishing the preparation of the sensor. In the whole preparation process of the sensor, the preparation technologies used are compatible with the standard
CMOS technology; the postprocessing technology is simple; the
frontage protection of the silicon chips for sensing is realized by the packaging anodic bonding technology; the ceramics are basically sticked and sealed to the back face of the thinned silicon chips, on the one hand, the ceramics serve as
heat sensitive materials to sense the wind changes in the outside environment, and on the other hand, the ceramics are used for protecting the silicon chips. By the sensor, the
wafer level packaging is realized, and the sensor has the characteristics of good compatibility, simple subsequent technology, and low cost.