10292results about How to "Prevent splash" patented technology

A substrate processing apparatus is provided. The apparatus includes a plurality of fluid suppliers 61, 61, 63 for supplying different processing fluids. In processing a wafer W, the substrate processing apparatus moves the fluid suppliers 61, 62, 63 along the peripheral part of the wafer W relatively. The fluid suppliers 61, 62, 63 are arranged in a direction extending from the circumference of the wafer W to its inside. With the arrangement, the apparatus is capable of stable processing of the wafer W in spite of rotating the wafer W at a low speed. Further, it is possible to improve a throughput of the apparatus in resist processing.

A valve comprising a housing accommodating a first and a second outlet port, a first stage float member associated with the first outlet port and a second stage float member associated with the second outlet port. The float members are displaceable within the housing about parallel axes, between an open position and a closed position. The first stage float member at least partially overlaps over the second stage float member.

An aromatic nebulizing diffuser includes a base panel (10), a power adapter (20), an electric fan (30), a shell (40), a fluid container (50), an oscillator (60) and a top over (70). The oscillator (60) oscillates an aromatic fluid in the fluid container (50) to produce a fine mist. The fluid container (50) has an air conduit (53) that reduces in direction from its bottom air inlet (531) toward its top air outlet (532) for causing acceleration of the speed of the induced flow of air to carrying the fine mist of aromatic fluid droplets out of jet holes (71) on the top cover (70). The fluid container (50) is detachably fastened to the base panel (10) by means of plugging bottom mounting rods (512) of the fluid container (50) into respective tubular upright posts (12) of the base panel (10), facilitating cleaning.

A substrate processing apparatus is provided. The apparatus includes a plurality of fluid suppliers 61, 61, 63 for supplying different processing fluids. In processing a wafer W, the substrate processing apparatus moves the fluid suppliers 61, 62, 63 along the peripheral part of the wafer W relatively. The fluid suppliers 61, 62, 63 are arranged in a direction extending from the circumference of the wafer W to its inside. With the arrangement, the apparatus is capable of stable processing of the wafer W in spite of rotating the wafer W at a low speed. Further, it is possible to improve a throughput of the apparatus in resist processing.

The invention discloses a sputtering chamber, a pre-cleaning chamber and plasma processing equipment. The sputtering chamber comprises a cavity, a target, an electrostatic chuck and an inductance coil, wherein the target is arranged at the top end of the cavity and is connected with a power supply; the electrostatic chuck is arranged at the bottom of the cavity; and the inductance coil is arranged at the outer side of the cavity. The sputtering chamber can be used for preventing the inductance coil from being sputtered by plasma, thereby the service life of the inductance coil is prolonged, the use cost of the sputtering chamber is reduced, particle pollution sources in the sputtering chamber are reduced, the pollution caused by particles deposited on the surface of the inductance coil to processed workpieces is avoided and the utilization rate of the target is improved. According to the pre-cleaning chamber, a top cover can be designed to be an easily-processed structure, so that an arched structure with higher processing cost is avoided, and further the processing cost of the top cover is reduced, the adhesive force of the particles and the top cover is improved and the pollution of the particles attached to the surface of the top cover to the processed workpieces positioned below the top cover is reduced and even avoided.

When two high-strength steel sheets (1A, 1B) having a sheet thickness ratio of 2 to 5, inclusive, and both having a tension strength of 780 MPa to 1850 MPa, inclusive, are overlapped with each other and resistance spot welding is performed, a first energizing process that is a preliminary energization with an applied pressure of P1 kN and a welding current of I1 kA and a second energizing process that is a main energization with an applied pressure of P2 kN and a welding current of I2 kA are performed, wherein the sheet thickness ratio is defined as the ratio of the total steel sheet thickness to the thickness of a steel sheet on the thinner side (the thickness per sheet if the two steel sheets (1A, 1B) have the same thickness). The applied pressures P1 and P2 are set to a constant applied pressure of P = P1 = P2 through the first energizing process and the second energizing process. In addition, when an average sheet thickness of the steel sheets (1A, 1B) is assumed to be t mm, the applied pressure P is set in the range expressed by the formula {0.5 ≤ P ≤ 3.0t(1 / 3)}. The welding current I1 is set in the range of 30% to 90%, inclusive, of the welding current I2. The second energizing process is initiated within 0.1 s after the completion of the first energizing process.