Sputtering chamber, pre-cleaning chamber and plasma processing equipment

一种溅射腔、预清洗的技术，应用在溅射镀覆、离子注入镀覆、金属材料涂层工艺等方向，达到提高利用率、提高质量、降低加工成本的效果

Active Publication Date: 2012-04-18
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] The technical problem to be solved by the present invention is to provide a sputtering chamber for the above-mentioned defects in plasma processing equipment, which can reduce the pollution of particles to the workpiece to be processed, and can reduce the cost of using the sputtering chamber

Method used

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  • Sputtering chamber, pre-cleaning chamber and plasma processing equipment
  • Sputtering chamber, pre-cleaning chamber and plasma processing equipment
  • Sputtering chamber, pre-cleaning chamber and plasma processing equipment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0063] Figure 4 It is a schematic structural diagram of a sputtering chamber provided by the present invention. Such as Figure 4 As shown, the sputtering chamber includes a cavity 20 , a target 25 , an electrostatic chuck 29 and an induction coil 13 . The cavity 20 is fixed on the upper surface of the bottom wall 2 , and a target 25 is arranged on the top of the cavity 20 . The target 25, the chamber body 20 and the bottom wall 2 constitute the sputtering chamber of the plasma processing device.

[0064] The cavity 20 includes a stacked insulator cavity 21 and a first conductive sub-cavity 22, wherein the first conductive sub-cavity 22 is made of a conductive material (such as stainless steel and aluminum) and grounded, which serves as a link between the radio frequency and the DC circuit. The ground terminal is used to ensure normal plasma ignition and maintenance. The insulator cavity 21 is made of insulating material (such as ceramic or quartz).

[0065] The target 2...

Embodiment 2

[0088] Figure 9 A schematic structural diagram of the pre-cleaning chamber provided in Embodiment 2 of the present invention. Such as Figure 9 As shown, the pre-cleaning chamber includes a chamber body 20 , a top cover 35 , an electrostatic chuck 29 and an induction coil 13 . The cavity 20 is fixed on the upper surface of the bottom wall 2 , and the top cover 35 is arranged on the top of the cavity 20 . The top cover 35, the chamber body 20 and the bottom wall 2 form a pre-cleaning chamber.

[0089] The cavity 20 includes a cylindrical second conductive sub-cavity 23 , an insulator cavity 21 and a first conductive sub-cavity 22 stacked sequentially from top to bottom, and the second conductive sub-cavity 23 and the first conductive sub-cavity The body 22 is grounded to serve as the ground terminal of the radio frequency and DC circuits, and is used to ensure normal plasma ignition and maintenance.

[0090] The inductance coil 13 is arranged outside the insulator cavity 2...

Embodiment 3

[0096] Figure 10 A schematic structural diagram of the pre-cleaning chamber provided in Embodiment 3 of the present invention. see Figure 10 , the pre-cleaning chamber includes a cavity 20 , a target 39 , an electrostatic chuck 29 and an induction coil 13 . The cavity 20 is fixed on the upper surface of the bottom wall 2 , and the top cover 35 is arranged on the top of the cavity 20 . The top cover 35, the chamber body 20 and the bottom wall 2 constitute a sputtering chamber.

[0097] The cavity 20 includes a cylindrical second conductive sub-cavity 23 , an insulator cavity 21 and a first conductive sub-cavity 22 stacked sequentially from top to bottom, and the second conductive sub-cavity 23 and the first conductive sub-cavity The body 22 is grounded as the ground terminal of the radio frequency and DC circuits to ensure normal plasma ignition and maintain the plasma.

[0098] The inductance coil 13 is arranged outside the insulator cavity 21 and connected to the first ...

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Abstract

The invention discloses a sputtering chamber, a pre-cleaning chamber and plasma processing equipment. The sputtering chamber comprises a cavity, a target, an electrostatic chuck and an inductance coil, wherein the target is arranged at the top end of the cavity and is connected with a power supply; the electrostatic chuck is arranged at the bottom of the cavity; and the inductance coil is arranged at the outer side of the cavity. The sputtering chamber can be used for preventing the inductance coil from being sputtered by plasma, thereby the service life of the inductance coil is prolonged, the use cost of the sputtering chamber is reduced, particle pollution sources in the sputtering chamber are reduced, the pollution caused by particles deposited on the surface of the inductance coil to processed workpieces is avoided and the utilization rate of the target is improved. According to the pre-cleaning chamber, a top cover can be designed to be an easily-processed structure, so that an arched structure with higher processing cost is avoided, and further the processing cost of the top cover is reduced, the adhesive force of the particles and the top cover is improved and the pollution of the particles attached to the surface of the top cover to the processed workpieces positioned below the top cover is reduced and even avoided.

Description

technical field [0001] The invention relates to the technical field of semiconductor processing, and relates to a sputtering chamber, a pre-cleaning chamber and plasma processing equipment. Background technique [0002] Plasma processing equipment is widely used in today's semiconductor integrated circuits, solar cells, flat panel displays and other manufacturing processes. Plasma processing equipment that has been widely used in the industry is of the following types: for example, a DC discharge type, a capacitive coupling (CCP) type, an inductive coupling (ICP) type, and an electron cyclotron resonance (ECR) type. These types of plasma processing equipment are currently used in processes such as deposition, etching, and cleaning. [0003] Sputtering chamber is a kind of deposition equipment that is often used. It connects a high-power DC power supply to the target, and the plasma generated by the DC power supply bombards the target, thereby depositing the material of the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34H01J37/32H01L21/00
CPCH01J37/32467H01J37/3411C23C14/564H01J37/32871C23C14/3471H01J37/32651C23C14/358C23C14/35H01J37/34H01J37/3441H01J37/3488C23C14/50
Inventor 陈鹏张良吕铀赵梦欣郑金果丁培军杨柏耿波韦刚吴桂龙
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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