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Preparation method of anodic-aluminum-oxide-based nano imprinting template

A nano-imprinting and anodizing technology, applied in nanotechnology, coating, surface reaction electrolytic coating, etc., can solve problems such as non-reusability, poor structural order, and AAO film damage.

Inactive Publication Date: 2015-05-27
PEKING UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In order to solve the shortcomings of the high cost of preparing nanoimprint templates by electron beam exposure in the prior art, as well as the poor structural order, damage and reusability of the AAO film during the transfer process of the current AAO nanohole array pattern, this paper The invention provides a method for preparing a large-area nanoimprint template with nanohole arrays based on anodized aluminum oxide technology; through the combination of AAO and nanoimprint, the obtained AAO film is used as a nanoimprint template, and after hot embossing Two-step transfer process with UV imprinting to achieve transfer replication of periodic nanohole array patterns and preparation of nanoimprint templates

Method used

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  • Preparation method of anodic-aluminum-oxide-based nano imprinting template

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Embodiment 1

[0078] In this embodiment, sapphire is used as the rigid substrate 1, and the method of wet etching the sapphire is adopted, and the mask adopts a hard mask. The preparation method of the nanoimprint template based on anodized aluminum in this embodiment includes the following steps :

[0079] 1) Aluminum flakes with a purity of 98% and a thickness of 300 μm were mixed with a mixed solution of perchloric acid and ethanol (HClO at 5° C. 4 :C 2 h 5 OH=1:4, volume ratio) for electrochemical polishing.

[0080] 2) Perform an anodic oxidation reaction in a 0.005-0.5mol / L phosphoric acid solution at 1°C to produce a disordered nanoporous structure. However, as the reaction progresses, a self-assembled preliminary order is gradually formed at the bottom of the alumina. Nanohole array, the reaction time is 8h.

[0081] 3) Soak in a mixed solution of chromic acid and phosphoric acid (mass fraction of chromic acid is 20%, mass fraction of phosphoric acid is 6%) at 80°C for 6 hours t...

Embodiment 2

[0092] In this embodiment, sapphire is used as a rigid substrate, a method of dry etching sapphire is adopted, and a hard mask is used as a mask. The method for preparing an AAO-based nanoimprint template in this embodiment includes the following steps:

[0093] 1) to 7) are the same as in Embodiment 1.

[0094] 8) successively adopt acetone, ethanol and deionized water to clean the surface of the rigid substrate 1, after cleaning, vapor-deposit a layer of material Ni with a high selection ratio on the surface of the rigid substrate as a hard mask 5 with a thickness of 100nm; , Spin-coat 400nm-thick nano-imprint adhesive on the hard mask; for hard masks with poor adhesion, it is necessary to spray the corresponding tackifier on the hard mask before coating the nano-imprint adhesive; After the nano-imprint glue 6, it is pre-baked under high temperature conditions, the temperature is 100°C, and the time is 5 minutes.

[0095] 9) with embodiment one.

[0096] 10) remove the resid...

Embodiment 3

[0100] In this embodiment, sapphire is used as the rigid substrate, the method of dry etching sapphire is adopted, and the nano-imprint glue is used as the mask. The preparation method of the AAO-based nano-imprint template in this embodiment includes the following steps :

[0101] 1)~3) are the same as embodiment one.

[0102] 4) Since the nano-imprinting glue is used as a mask in step 11), and the selection ratio of nano-imprinting glue and sapphire etching is small, the depth of the hole array of nano-imprinting glue must reach more than 1 μm, so the hole of AAO is required. The depth needs to be more than 1 μm, and the time for controlling the secondary anodic oxidation reaction should be more than 10 minutes, so that the depth of the orderly and periodic nanohole array reaches more than 1 μm, and the others are the same as in the first embodiment.

[0103] 5) to 7 are the same as in Embodiment 1.

[0104] 8) Use acetone, ethanol and deionized water to clean the surface ...

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Abstract

The invention discloses a preparation method of an anodic-aluminum-oxide-based nano imprinting template. According to the preparation method, the nano imprinting template with periodic nano-hole arrays is prepared from ordinary aluminum sheets by an anodic oxidation method; the diagram is simple and is low in cost; the preparation cost of the nano imprinting template is skillfully reduced; due to the adoption of the anodic aluminum oxide AAO method, nano-hole arrays with different periods and different hole diameters can be prepared by controlling the reaction conditions; the method is flexible and convenient, is low in cost and can meet different requirements; the nano-hole arrays of AAO are transferred and copied by a nano imprinting method; the problems that the structure is poor in sequence and the AAO is damaged and cannot be reused in the process of transferring the current AAO nano-hole array diagram can be avoided; by virtue of the adoption of the secondary imprinting method and an intermediate polymer template IPS method, AAO is protected while the cleaning effect is also achieved, so that the AAO is reused; the cost is further reduced.

Description

technical field [0001] The invention relates to a large-area nano-pattern preparation technology, in particular to a method for preparing a nano-imprint template based on anodized aluminum. Background technique [0002] Anodic Aluminum Oxide (AAO) is a nanoporous structure formed by electrochemically corroding high-purity aluminum (>99.999%) in an acidic solution and self-assembling. As early as the 1950s, Keller proposed the oxide film structure model, and believed that anodized aluminum is a porous structure composed of hexagonal columns with a round hole in the center. The more common view now is that anodized aluminum in acidic medium is mostly a double-layer structure of barrier layer and porous layer. The barrier layer is dense and non-porous, and has high electrical resistance. Its thickness is generally at the nanometer level, and the thickness of the porous layer can be controlled between nanometers and tens of microns. In the 1990s, R.C.Furneaux studied the mi...

Claims

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Application Information

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IPC IPC(8): C25D11/12B82Y40/00
CPCC25D11/12B82Y40/00
Inventor 陈志忠蒋盛翔付星星姜显哲姜爽冯玉龙康香宁于彤军张国义
Owner PEKING UNIV
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