Patents
Literature
Patsnap Copilot is an intelligent assistant for R&D personnel, combined with Patent DNA, to facilitate innovative research.
Patsnap Copilot

130 results about "Beak shape" patented technology

Most species of birds have external nares (nostrils) located somewhere on their beak. The nares are two holes—circular, oval or slit-like in shape—which lead to the nasal cavities within the bird's skull, and thus to the rest of the respiratory system.

Biomimetic robotic dolphin

The invention discloses a biomimetic robotic dolphin. The biomimetic robotic dolphin comprises a beak part, a head shell, a pectoral fin mechanism, a main advancing mechanism, a tail part, a control part and a dolphin skin, wherein the beak part, the head shell and the pectoral fin mechanism form a streamlined head for the robotic dolphin; a left pectoral fin and a right pectoral fin are arranged on the two sides outside the head of the robotic dolphin and driven by six steering engines to swing, flap and turn respectively; the main advancing mechanism consists of a main flapping mechanism, a turning mechanism, a main advancing mechanism shell, a main advancing mechanism rubber pipe, a supporting frame and a dorsal fin which are driven by a direct current motor and the steering engines to realize flapping and turning of the body; the tail part comprises connecting nuts, a tail part skeleton and a tail fin flapping mechanism which are driven by the steering engines to realize the flapping of the tail fin; the control part consists of a control board, a communication module and a motor driver and is used for controlling the movement of the dolphin; and the dolphin skin is sleeved outside the mechanical structure of the robotic dolphin to realize integral sealing. The biomimetic robotic dolphin has the advantages of compact structure, realistic appearance and capability of providing an experiment platform for manufacturing tools for underwater operation.
Owner:INST OF AUTOMATION CHINESE ACAD OF SCI

Dwarfing, close planting and early fruiting culturing method for lychees with shape of chicken beak

The invention provides a dwarfing, close planting and early fruiting culturing method for lychees with the shape of a chicken beak. The culturing method comprises the following steps: grafting, namely selecting Sapindaceae dwarfing rootstocks and adopting scion grafting method to perform cleft grafting; field setting, namely arranging the planting holes in rectangle or staggered different line manner; nutrient and water management, namely primarily adopting the method of frequent and low-amount fertilization, applying phytocide, and utilizing a mulching film; shaping and trimming, namely controlling each tree crown to be an expanding heart shape with two layers and seven leader branches through trunk fixing, bud carving and branch trimming, and controlling tree height through cutting the trunk in a ringing manner, trimming in a retractable manner in the winter, and promoting growth of new buds through cutting main branches and side branches in a ringing manner; drug spraying, namely applying growth regulation substances; insect disease prevention. The culturing method adopts the dwarfing rootstocks which is in the same family as the lychees with the shape of the chicken beak to complete grafting; the tree height and tree crown shape are controlled through trimming; the seedlings of lychees with the shape of the chicken beak is shortened through applying drugs; the fertility is reserved through utilizing the mulching film; the sunlight utilization ratio is increased, and early fruiting and high yield of the lychees with the shape of the chicken beak are obtained; the culturing method provided by the invention is quick in bringing production, early in fruiting, high in yield, and good in fruit quality.
Owner:北海市东雨农业科技有限公司

Determination device for metallic hydrogen diffusion current

The invention discloses a determination device for metallic hydrogen diffusion current. The determination device comprises a cathode chamber, an anode chamber and a CS double constant potential workstation, wherein the cathode chamber and the anode chamber are communicated with each other; a hole provided with a drain valve is formed in the lower part of one side of each of the cathode chamber and the anode chamber; a beak bent-tube stretching from the anode chamber to a communicating channel is mounted at the top opening of the anode chamber through a tightened rubber plug, a saturated calomel reference electrode is mounted in the beak bent-tube through a rubber plug, and an auxiliary electrode II connected with a conducting wire is also arranged in the anode chamber and positioned near to one side of the beak bent-tube; an auxiliary electrode I connected with the conducting wire is also arranged in the cathode chamber; a sample connected with the conducting wire is clamped between the connecting end faces of the communicating channel through sealed rubber rings; the auxiliary electrode I, the sample, the saturated calomel reference electrode and the auxiliary electrode II are connected to related interfaces in the CS double constant potential workstation through the conducting wires. The determination device has the advantages that the good accuracy is realized, the operation is convenient, the measuring results are stable and reliable and the usage and maintenance cost is low.
Owner:JIANGSU UNIV OF SCI & TECH

Manufacturing method of semiconductor device of discrete field oxide structure

The invention discloses a manufacturing method of a semiconductor device of a discrete field oxide structure. The method comprises steps: a buffer oxide layer grows on the surface of a wafer; a silicon nitride layer is formed on the buffer oxide layer through deposition; a field region is defined through photoetching and etching is carried out, and silicon nitride in the field region is removed; ion implantation is carried out on the field region; a field oxide layer grows; the silicon nitride layer is removed; wet dip is carried out on the wafer, and the buffer oxide layer and partial field oxide layer are removed; the buffer oxide layer grows again on the surface of the wafer and the silicon nitride layer is formed on the newly-grown buffer oxide layer through deposition; a drift region is defined through photoetching and etching is carried out, and silicon nitride in the drift region is removed; ion implantation is carried out on the drift region; and a drift region oxide layer grows. According to the method, the silicon nitride layer is removed after growing of the field oxide layer is finished, the length of a field oxide beak can be optimized through adjusting the amount of wet dip and the problem that the field oxide beak is excessively long can be solved.
Owner:CSMC TECH FAB2 CO LTD

Semiconductor diode chip and manufacturing method thereof

The invention belongs to the technical field of semiconductors, and relates to a diode chip, in particular to a semiconductor diode chip and a manufacturing method thereof. The semiconductor diode chip comprises a silicon chip substrate, wherein the bottom part of the silicon chip substrate is provided with a phosphorus diffusion layer, the upper part is provided with a boron diffusion layer, metal electrodes are arranged on the upper part of the boron diffusion layer and the bottom part of the phosphorus diffusion layer, a novel passivation layer is arranged at the outer side of the peripheryof the silicon chip substrate, and the novel passivation layer comprises a transition portion and a 'beak' portion. The manufacturing method comprises the steps of original sheet cleaning, diffusion,sand blasting, cleaning, primary photoetching, stepped corrosion, secondary photoetching, grooving corrosion, cleaning, passivation, third-time photoetching, metallization, electrical performance testing and scribing. The semiconductor diode chip has the advantages that the 'beak' portion of the semiconductor diode chip is protected by glass, the glass is not higher than the table board of the chip, ignition is not caused, the manufacturing cost is low (higher than that of a knife scraping manufacturing process, and lower than that of a photoresist manufacturing process), the effective use area of the chip is large, the VF is lower, the glass is thick, the pressure endurance capability is high, the service life is long, the high temperature reliability is high and the like.
Owner:济南兰星电子有限公司

Molding method of window opening

The invention belongs to the technical field of building construction, and relates to a molding method of a window opening. A beam bottom molding plate is braced on the bottom of a structural beam firstly, a first batten is additionally arranged on the inner side of the beam bottom molding plate corresponding to a window, beam side molding plates are symmetrically braced on the two sides of the structural beam, sill lintel side molding plates are symmetrically braced on the two sides of a sill lintel, a second batten is fixedly braced at a window bottom outer port, the window opening is pouring-molded along with a concrete structure, after the concrete structure is poured, a braced window top opening molding plate and a window bottom opening molding plate are disassembled, an opening which is increased in height from outside to inside and comprises an eagle beak is formed in the upper port of a window cavity, and the opening which is increased in height from outside to inside and comprises a water slope is formed in a lower port of the window cavity, so that the once molding of the window opening is achieved. The molding method is simple in method, convenient to operate, high in production efficiency, low in cost, and capable of effectively solving the window leakage problem and can be widely applied to the molding processes of the window openings during building construction.
Owner:THE FIRST COMPARY OF CHINA EIGHTH ENG BUREAU LTD

High-frequency low-amplitude vibration tooth-extracting instrument

InactiveCN103006336AReduce postoperative painReduce the number of follow-up visits after surgeryDentist forcepsDental patientsBeak shape
The invention relates to a tooth-extracting instrument, and in particular relates to a high-frequency low-amplitude vibration tooth-extracting instrument. The high-frequency low-amplitude vibration tooth-extracting instrument comprises a high-frequency low-amplitude vibration generator, a transmission rod and a tooth fixing device, wherein the output end of the high-frequency low-amplitude vibration generator is connected to one end of the transmission rod; the tooth fixing device is arranged at the other end of the transmission rod; the tooth fixing device comprises a clamping ring, a beak matched with a tooth and a knurled nut; the basal part of the beak is sleeved on the transmission rod; the clamping ring is arranged outside the beak and clamped on a clamping groove of the transmission rod; and the knurled nut is arranged inside the beak and spirally connected with the transmission rod. The invention aims to design the high-frequency low-amplitude vibration tooth-extracting instrument, which has the advantages of being controllable in acting force, adjustable, strong in operability and predictable in tooth-extracting effect. Compared with the prior art, the high-frequency low-amplitude vibration tooth-extracting instrument disclosed by the invention has the advantages of being easy to operate, convenient for teaching and small in operative wound and is capable of relieving dread feeling of dental patients and the like.
Owner:温州医科大学附属口腔医院
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products