Semiconductor diode chip and manufacturing method thereof

Abstract

The invention belongs to the technical field of semiconductors, and relates to a diode chip, in particular to a semiconductor diode chip and a manufacturing method thereof. The semiconductor diode chip comprises a silicon chip substrate, wherein the bottom part of the silicon chip substrate is provided with a phosphorus diffusion layer, the upper part is provided with a boron diffusion layer, metal electrodes are arranged on the upper part of the boron diffusion layer and the bottom part of the phosphorus diffusion layer, a novel passivation layer is arranged at the outer side of the peripheryof the silicon chip substrate, and the novel passivation layer comprises a transition portion and a 'beak' portion. The manufacturing method comprises the steps of original sheet cleaning, diffusion,sand blasting, cleaning, primary photoetching, stepped corrosion, secondary photoetching, grooving corrosion, cleaning, passivation, third-time photoetching, metallization, electrical performance testing and scribing. The semiconductor diode chip has the advantages that the 'beak' portion of the semiconductor diode chip is protected by glass, the glass is not higher than the table board of the chip, ignition is not caused, the manufacturing cost is low (higher than that of a knife scraping manufacturing process, and lower than that of a photoresist manufacturing process), the effective use area of the chip is large, the VF is lower, the glass is thick, the pressure endurance capability is high, the service life is long, the high temperature reliability is high and the like.

Description

technical field

[0001] The invention belongs to the technical field of semiconductors and relates to diode chips, in particular to a semiconductor diode chip and a manufacturing method thereof. Background technique

[0002] With the advancement and development of semiconductor technology, the performance requirements of semiconductor devices are getting higher and higher. In the diode industry, the improvement of device performance is undoubtedly due to the birth of the GPP process. The so-called GPP process is the use of glass to passivate the surface of the PN junction. The process, the device produced by this process has high electrical performance and reliability, and the passivation material glass has good chemical stability. This process mainly exposes the PN junction through trench corrosion, and then cleans the PN junction surface to obtain a clean PN junction surface, then directly coats the glass on the PN junction surface, and melts it according to the temperature...

Examples

Embodiment 1

[0036] Example 1, such as figure 1 Shown, the present invention provides a kind of semiconductor diode chip, comprises silicon chip substrate, and the bottom of its silicon chip substrate is provided with phosphorus diffusion layer, and upper part is provided with boron diffusion layer, for the shape of silicon chip substrate and boron diffusion layer The design is also relatively simple, mainly depending on the design of the external passivation layer. In addition, the upper part of the boron diffusion layer and the bottom of the phosphorus diffusion layer are provided with metal electrodes. For welding, the inventor is provided with a novel passivation layer wrapping the silicon wafer substrate and the side of the boron diffusion layer on the outside of the silicon wafer substrate (chip), from figure 1 It can be seen from the figure that the new passivation layer includes the silicon wafer substrate and the surrounding sides of the boron diffusion layer. However, when the ne...

technical field

[0001] The invention belongs to the technical field of semiconductors and relates to diode chips, in particular to a semiconductor diode chip and a manufacturing method thereof. Background technique

[0002] With the advancement and development of semiconductor technology, the performance requirements of semiconductor devices are getting higher and higher. In the diode industry, the improvement of device performance is undoubtedly due to the birth of the GPP process. The so-called GPP process is the use of glass to passivate the surface of the PN junction. The process, the device produced by this process has high electrical performance and reliability, and the passivation material glass has good chemical stability. This process mainly exposes the PN junction through trench corrosion, and then cleans the PN junction surface to obtain a clean PN junction surface, then directly coats the glass on the PN junction surface, and melts it according to the temperature...

Examples

Embodiment 1

[0036] Example 1, such as figure 1 Shown, the present invention provides a kind of semiconductor diode chip, comprises silicon chip substrate, and the bottom of its silicon chip substrate is provided with phosphorus diffusion layer, and upper part is provided with boron diffusion layer, for the shape of silicon chip substrate and boron diffusion layer The design is also relatively simple, mainly depending on the design of the external passivation layer. In addition, the upper part of the boron diffusion layer and the bottom of the phosphorus diffusion layer are provided with metal electrodes. For welding, the inventor is provided with a novel passivation layer wrapping the silicon wafer substrate and the side of the boron diffusion layer on the outside of the silicon wafer substrate (chip), from figure 1 It can be seen from the figure that the new passivation layer includes the silicon wafer substrate and the surrounding sides of the boron diffusion layer. However, when the ne...

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