9results about How to "Improve high temperature reliability" patented technology

The invention discloses a double-groove super junction structure and a manufacturing method thereof, the double-groove super junction structure comprises a plurality of MOS cells which are connected in parallel, and each MOS cell comprises a drain electrode, an upper metal source electrode, a grid electrode, a semiconductor epitaxial layer, a substrate layer, a P well layer and an N well layer; a groove is formed between adjacent MOS cells and in the middle of the heavily doped P well layer I through etching, an oxide layer is deposited at the bottom of the groove, a side metal source electrode is arranged on the surface of the oxide layer, and the top of the side metal source electrode is in contact with the upper metal source electrode; the side surface of the side metal source is in ohmic contact with the N well layer, the lightly doped P well layer I and the heavily doped P well layer I; the grid electrode is a longitudinal groove type grid electrode and is arranged between the two N well layers of the single MOS cell, and the grid electrode is connected with the N well layers, the first lightly-doped P well layer and the diffusion layer in an isolated mode through a grid oxide layer. According to the invention, the injection depth of the heavily doped P well layer I is increased through the groove, and the (11-20) surface channel is adopted, so that the interface state density is greatly reduced, and the overall size of the device is reduced.

This invention discloses a molten salt pump with a bearing cooling system, belonging to the technical field of high-temperature molten salt pumps. It includes: a pump body, a pump shaft, a frame, a bearing housing, a cooling device, and a support frame. The pump body is mounted on the frame; the frame is mounted on the top of the pump body, and the bearing housing is mounted within the frame. The pump shaft is rotatably connected to the bearing housing via bearings. The cooling device is installed inside the bearing housing, with multiple microchannel coils respectively fitted onto the outer surface of the bearing. A flywheel energy storage device is installed inside the bearing housing, driving ambient air to enter through the air inlet and generating a forced airflow that blows across the cooling end of the cooling device for heat exchange. The cooling end of the cooling device is connected to a cold air inlet pipe, which is connected to multiple microchannel coils, and all microchannel coils are connected to an outlet pipe. An outlet is provided at the bottom of the bearing housing, and the outlet pipe is connected to the outlet. This invention miniaturizes and integrates a compressor-free cooling device into the bearing housing for active phase change cooling, extending the lifespan of the molten salt pump.

Provided is a pouch for a secondary battery and a lithium secondary battery including the same. The pouch for the secondary batter includes a barrier layer, a base material layer disposed on one surface of the barrier layer, and a sealant layer disposed on the other surface of the barrier layer. The sealant layer includes a first sealant layer in contact with the other surface of the barrier layer, and a second sealant layer disposed on the first sealant layer opposite to the barrier layer. The sealant layer has a melt flow rate (MFR) of about 14.0 g / 10 min or less, which is measured at a temperature of about 230°C under a load condition of about 2.16 kg.

The invention relates to a process method for forming high-temperature-resistant 4H-SiC P-type ohmic contact. The process method comprises the following steps: providing a SiC wafer; carrying out ion implantation; performing high-temperature activation annealing on the implanted ions; depositing a gate oxide and polycrystalline silicon in the gate region, and sequentially depositing SiO2 / Si3N4 / SiO2 in other regions as an interlayer medium; carrying out photoetching trepanning on the ohmic contact area; si3N4 is deposited through chemical vapor deposition, then Si3N4 is removed through dry etching, and a Si3N4 side wall is formed in the ohmic contact hole; and depositing a Pd / Al / Pd metal laminated layer as metal for forming ohmic contact, and forming the ohmic contact through rapid thermal annealing. The method disclosed by the invention has the beneficial effects that SiO2 / Si3N4 / SiO2 is sequentially deposited as an interlayer medium after ion activation annealing, and the middle layer of Si3N4 can prevent reaction and penetration of Al to SiO2 in subsequent treatment.

The application belongs to the technical field of nanocomposites, and particularly relates to a kind of nano Cu@Sn powder and its preparation method and application. The preparation method of the nano Cu@Sn powder comprises the following steps: S1, under nitrogen protection, ammonia is added to an aqueous solution of copper salt, then a vinylpyrrolidone-vinyl acetate copolymer is added, the temperature is raised, an aqueous solution of hydrazine hydrate is added, stirring is continued, after the stirring is completed, the product is centrifuged under nitrogen protection, washed, and dried to obtain nano copper powder; S2, a complexing agent, a complexing agent, and an antioxidant are dissolved uniformly in a eutectic ionic liquid, nano copper powder is added, stirring is performed until the nano copper powder is uniformly dispersed, a stannous chloride hydrochloride solution is added, stirring is continued, an EVA solution is added, stirring is continued, after the stirring is completed, the product is centrifuged, washed, and dried to obtain Cu@Sn powder. The solder prepared by the application has high mechanical strength of solder joints and excellent high-temperature reliability.

This application relates to a heat dissipation substrate and its manufacturing method, a power semiconductor module, and a power converter. Embodiments relate to a heat dissipation substrate for power semiconductors, a power semiconductor module including the same, a power converter including the same, and a manufacturing method thereof. The method for manufacturing a heat dissipation substrate for power semiconductors according to an embodiment may include the following steps: preparing a first ceramic substrate; forming a bonding metal layer having a first thickness by sputtering on one or another surface of the first ceramic substrate; disposing a metal plate on the first ceramic substrate on which the bonding metal layer can be formed; and performing a hot pressing process while disposing the metal plate. In the hot pressing process step, the bonding metal layer may react with the first ceramic substrate to become an oxide bonding layer.

The invention discloses a plastic package unit, a unit integrated power module and a preparation method thereof, and relates to the field of power electronic power modules. Comprising a conducting strip which comprises a conducting strip first area and a conducting strip second area which are arranged at an interval; the power chip set comprises a plurality of power chips, is electrically connected to the first area of the conducting strip and is electrically connected with the second area of the conducting strip through a plurality of connecting parts; the plastic package body is wrapped on the conducting strip; and the first exposed area and the second exposed area of the conducting strip are respectively exposed from the plastic package body. Specifically, the first exposed area and the second exposed area of the conducting strip are located on different surfaces of the plastic package body. Specifically, a certain height difference exists between the bottom surface of the second area of the conducting strip and the bottom surface of the first area of the conducting strip, and the height difference ranges from 0.2 mm to 10 mm. The unit integrated power module adopts a plastic package unit integration idea, the size of a plastic package body is small, the process yield is higher, and the reliability is higher.

The present invention relates to a polymerizable liquid crystal composition and a display device thereof, and belongs to the field of liquid crystal materials. The polymerizable liquid crystal composition comprises at least one compound having a structure shown in general formula I: at least one compound shown in general formula P: at least one compound shown in general formula II: at least one compound shown in general formula III: and at least one compound shown in general formula M, wherein compound M is selected from compounds represented by general formula M-I and / or M-II: The liquid crystal composition of the present invention has very low rotational viscosity, good phase performance and good low-temperature performance, and can form a lower pretilt angle after UV irradiation, has less RM residue, lower threshold voltage and faster response time, and the formed pretilt angle has long-term stability under high and low temperature conditions, and can meet the requirements of liquid crystal display devices for low power consumption and good display effect.

The invention relates to a preparation method of silver-based high-temperature brazing filler metal for low-temperature connection of patch-type heterogeneous materials, which is characterized by comprising the following steps: step 1, weighing soluble silver salt, adding the soluble silver salt into a solvent, and uniformly mixing the solvent and the soluble silver salt according to the weight ratio of 1: 1-10: 1; performing ultrasonic treatment for at least 10 minutes to completely dissolve the soluble silver salt to obtain a precursor solution; wherein the soluble silver salt is silver nitrate or silver acetate; the solvent comprises water or alcohol; the silver-based high-temperature brazing filler metal prepared through the method has the advantage of being easy to synthesize, compared with a traditional silver nano material synthesis step, time consumed by the synthesis process is greatly shortened, the yield of the nano material is increased, and the method is suitable for large-scale preparation.