83results about How to "Improve high temperature reliability" patented technology

A multilayer ceramic capacitor includes: a ceramic body having first and second surfaces opposing each other and third and fourth surfaces connecting the first and second surfaces to each other; a plurality of internal electrodes disposed in the ceramic body, exposed to the first and second surfaces, and each having one end exposed to the third or fourth surface; and first and second side margin portions disposed on the first and second surfaces and covering exposed surfaces of the internal electrodes. A dielectric composition contained in the first and second side margin portions is different from a dielectric composition contained in the ceramic body, the first and second side margin portions contain a barium titanate-based base material powder and magnesium (Mg), manganese (Mn), and aluminum (Al) as accessory ingredients, and a content ratio of manganese (Mn) to magnesium (Mg), manganese (Mn), and aluminum (Al) satisfies 0.316≤Mn/(Mn+Mg+Al)≤0.500, based on a molar content of Mn, Mg and Al in the first and second side margin portions.

The invention discloses a shift register comprising an input unit, a pull-up output unit and a first charging unit, wherein the input unit is connected with a signal input end and a signal control end, the input unit is used for generating charging control signals and voltage maintaining signals according to input signals provided by the signal input end and control signals provided by a signal control end, and the pull-up output unit comprises pull-up nodes; the first charging unit is connected with the pull-up nodes, the input unit and a first electric level signal end; the first charging unit is used for charging the pull-up nodes according to electric level signals provided by charging control signals via the first electric level signal end, the first charging unit is also used for maintaining voltage of the pull-up nodes according to the voltage maintaining signals so as to preventing driving signals output via the shift register from voltage drop, that output at a level is prevented from drop can be ensured when high temperature TFT electric leakage occurs, and display effect can be improved during high temperature time. The invention also discloses an array substrate grid electrode drive circuit and a display apparatus.

A magnetic sensor is provided in which in a case where magnetization amounts of the first ferromagnetic layer and the second ferromagnetic layer in the first magnetic sensor element are respectively set to be Mst11 and Mst12 and magnetization amounts of the first ferromagnetic layer and the second ferromagnetic layer in the second magnetic sensor element are respectively set to be Mst21 and Mst22, in a case of Mst11>Mst12, a relationship of Mst21>Mst22 is satisfied, and in a case of Mst11<Mst12, a relationship of Mst21<Mst22 is satisfied.

A polarization element includes a plurality of metallic thin lines that extend in one direction on one surface of a substrate, a protecting layer that is provided on the plurality of metallic thin lines, and a cavity portion that is surrounded by two metallic thin lines which are adjacent to each other, the substrate, and the protecting layer. Each end portion of the plurality of metallic thin layers has a forward tapered shape in a cross-section parallel to the one direction, and the protecting layer extends from the upper portion of the plurality of metallic thin lines to the one surface of the substrate through each end portion.

The invention provides an inter-layer bonding sheet for a multi-layer board and a preparation method and application of the inter-layer bonding sheet. The inter-layer bonding sheet for the multi-layerboard comprises a PTFE substrate and a dielectric resin layer bonded to the surface of the PTFE substrate. The PTFE substrate is a PTFE substrate of which the surface is subjected to plasma treatment, and the surface treatment depth of the PTFE substrate is 5-15nm. After the surface of the PTFE substrate is subjected to plasma treatment, functional modification is achieved, wettability is remarkably improved, and the PTFE substrate can be stably bonded with the dielectric resin layer in a high-strength mode. According to the inter-layer bonding sheet for the multi-layer board, through the synergistic cooperation of the PTFE substrate with the surface subjected to plasma treatment and the dielectric resin layer, the inter-layer bonding sheet for the multi-layer board has excellent dielectric property, fluidity and bonding strength, the bonding stability is high, and the signal high-frequency requirement and the stability and reliability requirements of the multi-layer board can be fully met.

The invention discloses a selective catalytic reduction (SCR) urea jet device of a diesel engine, and belongs to the technical field of engine exhaust purification treatment. The SCR urea jet device comprises a mixing cavity; the mixing cavity is provided with a gas source inlet, a urea inlet and a liquid outlet pipe; the gas source inlet is sequentially connected with an air pressure maintainingvalve and an air electromagnetic valve through pipelines; a nozzle is fixedly arranged on the urea inlet; the nozzle is sequentially connected with a safety pressure limiting valve, a gear pump, a urea filter and a urea tank through pipelines; the tail end of the liquid outlet pipe is connected with a mechanical atomizer; and the atomizer is arranged on an exhaust pipe of the external diesel engine. The SCR urea jet device of the diesel engine has simple structure and is reasonable in design. Quantitative jet of aqueous solution of urea is realized through the electromagnetic nozzle; and meanwhile, the urea corrosion and high temperature resistant mechanical atomizer is directly arranged on the high temperature exhaust pipe by adopting an air assisting mode, so that the reliability of thesystem is promoted.

The invention discloses an LED bracket with good moisture-proof performance, an LED device and a preparation method thereof. The LED bracket comprises as a first pad and a second pad as conductive pins and reflective cups arranged on the pads. The first pad and the second pad are connected through an insulation block. The contact surfaces of the first pad and the second pad with the bottoms of the reflective cups are provided with metal lugs, and the metal lugs and the pads are integrally formed. Reflective side walls are formed by the inner side walls of the metal lugs and the inner walls of the reflective cups. The upper surfaces of the metal lugs are tightly attached with outer side walls and the bottom of the reflective cup, the outer side walls of the metal lugs are tightly attached with the bottoms of the reflective cups. The first pad and the second pad are also provided with water-adsorbing grooves which are arranged around the periphery of the metal lugs. Water-adsorbing material layers are filling the water-adsorbing grooves and are covered by the bottoms of the reflective cups. According to the LED bracket with good moisture-proof performance, the LED device and the preparation method, double water resistance with the use of the metal lugs and the water-adsorbing material layers in the water-adsorbing grooves is used, and the LED bracket and a package device with good moisture-proof performance and high reliability are obtained.

The invention provides an interlayer bonding sheet for a multilayer board and a preparation method and application of the interlayer bonding sheet. The interlayer bonding sheet for the multilayer board comprises a PTFE substrate and a dielectric resin layer bonded to the surface of the PTFE substrate; the PTFE substrate is a PTFE substrate of which the surface is treated by a sodium naphthalene solution, and the surface treatment depth of the PTFE substrate is 0.5-2 microns; after the surface of the PTFE substrate is treated by a sodium naphthalene solution, the wettability is remarkably improved, and the PTFE substrate can be stably bonded with the dielectric resin layer in a high-strength manner. The interlayer bonding sheet for the multilayer board has excellent dielectric property, flowability and bonding strength through the synergistic cooperation of the PTFE substrate with the surface treated by the sodium naphthalene solution and the dielectric resin layer, is high in bonding stability, can fully meet the signal high-frequency requirement and the stability and reliability requirements of the multilayer board, and has bright application prospect.

The invention discloses a graphene buried heat radiation layer and vertical channel GaN MISFET cellular structure and a preparation method; the cellular structure comprises a substrate, an AIN isolation layer, a graphene buried heat radiation layer, an AIN nucleating layer, a GaN buffer layer, a n type heavy doping GaN layer, a n type GaN layer, a P type GaN electronic stop layer, a non-doping GaN layer and an AlGaN barrier layer arranged from bottom to top; a cellular structure grating groove hole extends from the cellular structure top to the n type GaN layer; the gating groove hole side wall and bottom are respectively provided with a gate medium layer. An existing normally off GaN MISFET device cannot simultaneously have even and stable large threshold-voltage, low device conductive resistance and high switching rate; aiming at the normally off type GaN base III-V family material power device, the normally off GaN MISFET cellular structure with the vertical grid structure and the preparation method are provided so as to solve said problems, thus realizing GaN MISFET device stable large threshold-voltage normally off operations, and effectively reducing the device starting conduction resistance.

Disclosed herein are a dielectric composition including a compound represented by the following Chemical Formula A_5-xB₁₀O_30-x (A necessarily includes Ba, and a portion of Ba is substituted by at least one selected from Sr and Ca; B necessarily includes Nb, and a portion of Nb is substituted by at least one selected from Ta and V; and x satisfies the following equation: 1<x<5) as a main component and a multilayered ceramic capacitor including the same as a dielectric layer.

Provided is a composition for forming an adhesive film, comprising: a phenoxy-based thermosetting resin; a cyclic epoxy-based photo-curable compound; an isocyanate-based heat hardening agent; and a cationic photoinitiator.

The invention discloses an automatic thermal equalization control device and method for an interleaved parallel circuit, and the device comprises a temperature equalization circuit and acontrol loop;the temperature equalization circuit is used for generating a temperature compensation signal based on a temperature signal corresponding to each power circuit of the interleaved parallel circuit, andthe temperature compensation signal is used for compensating the temperature difference between the power circuits; and the control loop is connected with the temperature equalization circuit and isused for generating a driving control signal based on the output sampling signal of each power supply circuit and the temperature compensation signal, and the driving control signal is used for controlling a control signal generator for controlling a switching element of each power supply circuit.

The invention discloses a preparation method of a high thermal conductivity phase change temperature control composite packaging substrate, wherein, a low-melting-point alloy solid phase change material is integrated directly into an LTCC-ALN composite substrate and a phase change temperature control device with high integration and high thermal conductivity is formed. The invention is realized bythe following technical scheme: a phase change temperature control cavity is produced on the middle AlN green ceramic plate of the multi-layer AlN green ceramic plate, and then the aluminum nitride AlN substrate embedded with the sandwich of the phase change temperature control cavity is formed by laminated isostatic pressing and co-firing; matrix-distributed electronic component mounting cavities are fabricated on the LTCC green ceramic substrate, and then the AlN substrate and the LTCC green ceramic substrate are laminated and co-fired to form the LTCC-AlN composite substrate in which an electronic active device can be embedded. At last, solid phase change material of the low melting point alloy is heated and melted into the liquid state and poured into the phase change temperature control cavity of the composite substrate, and the phase change temperature control composite substrate with high thermal conductivity is prepared by sealing a cover plate.

The invention discloses a silicon carbide ohmic contact electrode and a manufacturing method of the silicon carbide ohmic contact electrode. The manufacturing method includes the steps of providing a SiC wafer material, and cleaning the surface of a SiC wafer; depositing ohmic contact metal Ni on the surface of the SiC wafer; depositing TiW alloy on the ohmic contact metal Ni; conducting high-temperature annealing on ohmic contacts, and completing manufacturing of SiCohmic contact structures. According to the silicon carbide ohmic contact electrode and the manufacturing method, as the TiW alloy has certain oxidation resistance, ohmic contact partial oxidation efficacy losing in the ohmic contact annealing and follow-up technological process can be prevented; the ohmic contacts of TiW/Ni/SiC structures have the better reliability compared with ohmic contacts of Ni/SiC structures.

The invention discloses a high-temperature one-way valve which comprises a valve body (1), a sealing ceramic ball (2), a piston (3), a sealing gasket I (4), a sealing gasket II (7) and a valve deck (8), wherein an external thread is formed in the outer side of the lower end of the valve body (1); a taper hole is formed in the inner side of the lower end of the valve body (1); a taper sealing valve seat and a cylindrical cavity are sequentially arranged upwards along an air inlet; the piston (3) takes the shape of a step shaft; two annular grooves (301) are formed in the excircle of the large end; a deeper inner hole is formed in the small end; and two annular grooves (301) are formed in a cylinder at one end of the valve deck (8). The high-temperature one-way valve has the characteristics of being compact in structure and small in flow resistance of a direct connection passageway; in addition, the heat insulation and heat dissipation design enables the high-temperature one-way valve to have higher high temperature reliability; and the high-temperature one-way valve has the advantage of practical engineering application, can be widely applied to industrial control and other industries and is suitable for fuel gas and other high-temperature media.