Shift register, array substrate grid electrode drive circuit and display apparatus

Abstract

The invention discloses a shift register comprising an input unit, a pull-up output unit and a first charging unit, wherein the input unit is connected with a signal input end and a signal control end, the input unit is used for generating charging control signals and voltage maintaining signals according to input signals provided by the signal input end and control signals provided by a signal control end, and the pull-up output unit comprises pull-up nodes; the first charging unit is connected with the pull-up nodes, the input unit and a first electric level signal end; the first charging unit is used for charging the pull-up nodes according to electric level signals provided by charging control signals via the first electric level signal end, the first charging unit is also used for maintaining voltage of the pull-up nodes according to the voltage maintaining signals so as to preventing driving signals output via the shift register from voltage drop, that output at a level is prevented from drop can be ensured when high temperature TFT electric leakage occurs, and display effect can be improved during high temperature time. The invention also discloses an array substrate grid electrode drive circuit and a display apparatus.

Description

technical field [0001] The present invention relates to the technical field of display control, in particular to a shift register, a gate driver on array (GOA, Gate Driver on Array) circuit and a display device. Background technique [0002] For GOA circuits in the related art, such as 10T3C NMOS drive circuits, under high temperature conditions, TFT (Thin Film Transistor, which is a thin film transistor) leakage phenomenon will occur, which will cause a drop (voltage drop) in the output of the GOA circuit at this stage. Especially at the touch moment of TDDI (Touch and Display Driver Integration, touch and display driver integration) products, the PU (Pull UP, pull-up) point will have a large drop, resulting in a large output drop at this stage, which will bring Come to the problem of poor display effect at high temperature. Contents of the invention [0003] The present invention aims to solve one of the technical problems in the related art at least to a certain extent...

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Problems solved by technology

[0002] The GOA circuit in the related art, such as the NMOS drive circuit of 10T3C, will cause TFT (Thin Film Transistor, which is a thin film transistor) leakage phenomenon under high temperature conditions, which will cause the output of the GOA circuit at this stage to drop (voltage drop)

Especially at the touch moment of TDDI (Touch and Display Driver Integration, touch and display driver integration) products, the PU (Pull UP, pull-up) point will have a large drop, resulting in a large output drop of this stage, which will bring The problem of poor display effect at high temperature

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