Technology for forming oxidation films with consistent thickness

An oxide film, consistent technology, applied in the direction of electrolytic coating, surface reaction electrolytic coating, coating, etc., can solve the problems of inconsistent thickness of tantalum pentoxide dielectric film, affecting product qualification rate, etc., to ensure thickness consistency, electric field The effect of uniform strength and reduced pressure difference

Active Publication Date: 2014-02-12
CHINA ZHENHUA GRP XINYUN ELECTRONICS COMP ANDDEV CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, the closer the anode tantalum block is to the connection point, the electrochemical reaction occurs first, and the one closer to the inside lags behind. As time goes by, the thickness of the formed tantalum pentoxide dielectric film is inconsistent, which ultimately affects the pass rate of the product.

Method used

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  • Technology for forming oxidation films with consistent thickness
  • Technology for forming oxidation films with consistent thickness
  • Technology for forming oxidation films with consistent thickness

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Embodiment Construction

[0013] The technical solution of the present invention is further described below in conjunction with the examples, but the scope of protection is not limited to the description.

[0014] A technique for forming an oxide film with a consistent thickness, comprising the following steps:

[0015] (1) Weld the sintered tantalum anode block evenly on the conductive metal strip, and then place the conductive metal strip on the bracket in turn;

[0016] (2) Put the bracket with the conductive metal strips into the electrolytic tank, which is filled with the electrolyte in advance;

[0017] (3) Make a "King"-shaped wire frame with wires, the size of the wire frame is equivalent to the size of the bracket, and the center of the "King"-shaped wire frame is the power connection point;

[0018] (4) Place the "Wang" character wire frame overlappingly on the bracket and make close contact with the metal strip spot-welded with the tantalum anode block;

[0019] (5) Connect the positive po...

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Abstract

The invention discloses a technology for forming oxidation films with consistent thickness. The technology comprises the following steps: (1) uniformly spot-welding a sintered tantalum anode block on a conductive metal bar; (2) placing a bracket with the conductive metal bar in an electrolytic cell; (3) manufacturing a lead frame in a shape of a Chinese character 'wang'; (4) placing the lead frame in the shape of the Chinese character 'wang' on the bracket in a superposed manner and compactly contacting with the metal bar spot-welded with the tantalum anode block; (5) connecting the anode of a power supply to the central position of the lead frame in the shape of the Chinese character Wang, and connecting the cathode of the power supply to the electrolytic cell; and (6) connecting the power supply for medium film forming treatment. The technology provided by the invention has the beneficial effects that the lead frame is manufactured by using a lead, so that the voltage difference between the output end of the power supply and the metal anode block of a valve is effectively reduced, the voltage applied to the anode block is guaranteed, and meanwhile, a current is applied from a terminal of a center shaft of the lead frame in the shape of the Chinese character 'wang', so that the paths of the current flowing to all directions are same, the electric field intensity is uniform, and the consistency of thickness of the generated oxidation films is guaranteed.

Description

technical field [0001] The invention relates to a technology for forming an oxide film with uniform thickness, and belongs to the technical field of metal surface coating. Background technique [0002] Tantalum electrolytic capacitors are composed of tantalum sintered anodes, dielectrics, cathode electrolytes, positive and negative leads, and insulating jackets, and the dielectric is a tantalum pentoxide film attached to the surface of tantalum particles. At present, the preparation process of the dielectric of tantalum capacitors is that the tantalum anode block is spot-welded behind the auxiliary metal strip and placed on the bracket, the bracket is placed in the electrolytic tank filled with electrolyte, the bracket is connected to the positive pole of the power supply, and the negative pole of the power supply It is connected to the electrolytic cell, so that the tantalum anode block reacts with the electrolyte under the action of an electric field, and a tantalum pentox...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D11/26
Inventor 吕林兴刘健李露黄奎熊远根
Owner CHINA ZHENHUA GRP XINYUN ELECTRONICS COMP ANDDEV CO LTD
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