134 results about "Tantalum pentoxide" patented technology

The invention belongs to the field of soft magnetic ferrite, and discloses a high-frequency low-loss manganese zinc ferrite material and a preparation method thereof, and the manganese zinc ferrite material comprises main components and auxiliary components. The main components comprise ferric oxide, zinc oxide, manganese oxide and cobaltosic oxide. The auxiliary components comprise calcium carbonate, silicon dioxide and tantalum pentoxide. The preparation method of the manganese zinc ferrite material comprises the following steps: proportioning, drying and ball-milling; pre-sintering is performed; performing secondary ball milling; performing granulation; forming is conducted; sintering is performed; and performing thermal aging. The manganese-zinc ferrite prepared by the invention has relatively low power loss under a high-frequency condition, and can be applied to the field of electronic materials related to power conversion, such as transformers and inductors.

The invention belongs to the technical field of target material production, and discloses a ZMO target material which is prepared from zinc oxide, magnesium oxide and doped metal oxide. Wherein the doped metal oxide is selected from at least one of tantalum pentoxide, cerium dioxide, titanium dioxide, niobium pentoxide, manganese sesquioxide and chromium sesquioxide, the mass ratio of metal elements in zinc oxide to metal elements in magnesium oxide is (73-91): (9-27), and meanwhile, the metal elements in the doped metal oxide account for 1000-10000 ppm of the total mass of the metal elements in the target material. Through the design, on one hand, the relative density of the target material is improved, and on the other hand, higher carrier concentration or more excellent carrier migration capability is provided for the target material by doping the metal oxide, so that the resistivity of the target material is reduced; in addition, the invention also discloses a preparation method of the ZMO target material.

The invention belongs to the technical field of external diagnosis devices, and particularly relates to a memristor for adenovirus concentration detection and a preparation method of the memristor. The memristor comprises a bottom electrode layer, a metal oxide layer, a functional layer and an upper electrode layer which are sequentially formed from bottom to top in the thickness direction, the bottom electrode layer is an FTO conductive glass layer, the metal oxide layer is tantalum pentoxide, the functional layer is a gelatin-beta cyclodextrin composite film, and the upper electrode layer is a conductive electrode layer. The gelatin-beta cyclodextrin composite film with the memristive effect serves as a functional layer, after the film makes contact with adenoviruses, the film adsorbs virus particles, then the unique resistance change characteristic of the memristor is caused, the memristive behavior of the memristor is further fed back, and the memristive effect of the memristor is improved. The method is used for recording and analyzing the electrochemical or bio-electricity signal characteristics of adenovirus solutions with different concentrations, the adenovirus solutions with different concentrations are effectively distinguished according to the electric signal difference of the adenovirus solution and the control solution, the effect is obvious, and the repeatability is good.

The invention relates to a multi-element synergistic doped ATO target material and a preparation method thereof. Comprising the following steps: 1) uniformly mixing water and a powder dispersant, then adding an oxide 1 (at least one of tantalum pentoxide, niobium pentoxide, vanadium pentoxide, gallium oxide and tungsten trioxide), an oxide 2 (at least one of zinc oxide, copper oxide, cobalt oxide, manganese oxide and cerium oxide) and ATO raw material powder, and mixing and homogenizing to prepare slurry; 2) grinding the slurry and adding a powder forming adhesive; 3) carrying out spray drying granulation on the ground slurry; according to the preparation method, the ATO target material with high compactness (relative density gt, 98.5%) and low resistance (resistivity lt, 5 * 10 <-3 > omega.cm) is prepared through multi-element synergistic doping of the oxide, and the problem that compactness and conductivity of the ATO target material are difficult to consider at the same time in the prior art is solved.

This disclosure, and the exemplary embodiments provided herein, include AM processed Ti-MMCs reinforced with either aluminum oxide or tantalum pentoxide. According to an exemplary embodiment, composite feedstock powders of Ti-6Al-4V (Ti64) with 1% and 3% (by volume) reinforcements of either nano-Al2O3 or Ta2O5 are prepared by high energy ball milling and then 3-D printed using SLM.

The utility model relates to an anti-reflection film and an optical lens, the anti-reflection film comprises n metal oxide film layers and n'ceramic film layers which are staggered and laminated along the thickness direction, and n and n 'are respectively integers; wherein the metal oxides of the n metal oxide film layers are respectively and independently titanium dioxide or tantalum pentoxide, and the ceramic materials of the n'ceramic film layers are respectively and independently silicon dioxide, silicon nitride, silicon carbide or magnesium fluoride; the optical lens comprises an optical substrate and the antireflection film arranged on the optical substrate. The antireflection film provided by the utility model has the advantage of increasing the light transmittance, and can be matched with the transmittance of a grating structure through stacking at least two types of materials with refractive index differences, thereby achieving the effect that the coupling-in region, the transition region and / or the coupling-out region of the optical lens are approximately transparent.

The invention discloses a method for improving the voltage endurance capability of a chip tantalum capacitor, and belongs to the technical field of capacitor manufacturing, and the method comprises the steps: enabling an anode tantalum block formed through a powder metallurgy method to generate a dielectric oxide film in an acid solution, then placing the anode tantalum block in sputtering coating equipment, introducing oxygen, taking tantalum as a target material, and carrying out sputtering coating on the anode tantalum block; a layer of tantalum pentoxide film is generated on the surface; and finally, the chip tantalum capacitor is formed by coating a manganese dioxide or polymer cathode. The invention relates to a method for improving the voltage endurance capability of a chip-type tantalum capacitor, which plays a role in improving the reliability of the chip-type tantalum capacitor.

The invention relates to the technical field of niobium-tantalum-iron ore purification, in particular to a method for preparing high-purity tantalum pentoxide and niobium pentoxide from niobium-tantalum-iron ore. The method comprises the following steps: firstly, adding ammonium fluoride and ammonium sulfate to help mineral decomposition and reduce the roasting temperature, then treating the niobium-tantalum iron ore by using a sulfuric acid-hydrofluoric acid mixed solution to fully dissolve niobium-tantalum oxides, then extracting and separating niobium and tantalum by using a specific solvent system, and finally adding ammonia water to precipitate and calcine to obtain the niobium-tantalum iron ore. The high-purity niobium pentoxide and tantalum pentoxide are prepared, the product yield is high, the impurity content is low, and the niobium pentoxide and tantalum pentoxide are suitable for being used as raw materials of capacitor-grade tantalum powder and niobium powder.

The invention relates to the technical field of electrode coating preparation, in particular to an iridium tantalum coating for a metal electrolysis anode plate and a preparation method. The catalyst comprises the following raw materials: iridium acetylacetonate, 1, 3-propylene glycol, tantalum pentoxide and dimethylplatinum dichloride. According to the method, the grooves are formed in the surface of the metal anode plate, then part of the substrate liquid is coated on the surface of the metal anode plate, so that the substrate liquid permeates into the grooves and forms the substrate film on the surface, the doped film is formed on the substrate film through a vacuum evaporation method, and the doped film is formed on the substrate film through the bonding characteristic of the substrate film and the high adhesiveness provided by the grooves. A substrate film and a doped film are firmly combined on the surface of a metal anode plate, carboxyl functional groups in 1, 3-propylene glycol in residual substrate liquid are cross-linked and matched with dichlorodimethylplatinum, so that the corrosion resistance and the wear resistance of the coating are improved, the binding force of the coating and other materials is improved, and the iridium tantalum coating with strong adhesive force is generated; and the coating is prevented from falling off, so that the corrosion resistance of the anode plate is ensured.

The invention provides a high-purity structural color device based on a metasurface and a color developing method, and relates to the technical field of structural color metasurface, the structural color device is a double-layer nanoring array based on an all-dielectric metasurface, adopts an optical design based on Fabry-Perot interference and Mie resonance, and comprises a plurality of structural units, the structure unit comprises a vertical stacking double-layer circular ring structure formed by a tantalum pentoxide Ta2O5 functional layer and a silicon dioxide SiO2 top cover layer, and has sub-wavelength periodic two-dimensional arrangement; through the technical path of the invention, a structural color solution with high purity, wide color gamut and high reflection is provided by utilizing the wide band gap characteristic and high-quality manufacturing capability of Ta2O5. The application scenarios include but are not limited to high-end displays, optical sensors, information encryption and precision optical elements, and brand new possibility is provided for development of the next generation of photonics technology.

The present invention belongs to the technical field of silicon carbide crystal growth, and specifically relates to a preparation device, method and graphite component for a tantalum carbide film layer on the surface of a graphite component. The preparation device comprises: a crucible part, which has a hollow structure, the lower part of the hollow structure is a tantalum pentoxide receiving part, which includes a circumferentially surrounding crucible wall; a graphite component, which is coaxially arranged with the crucible part, is located above the crucible part, and its lower end is sealed and fixedly connected with the upper end of the crucible wall; a flow guide, which comprises a columnar section, the columnar section is located inside the graphite component, the columnar section is coaxially arranged with the graphite component, the outer wall of the columnar section and the inner surface of the graphite component are spaced, and the columnar section is located above the tantalum pentoxide receiving part, and the aforementioned space is connected to the tantalum pentoxide receiving part. The method of the present invention can significantly reduce the preparation cost of the tantalum carbide film layer, improve the compactness of the tantalum carbide film layer, extend the service life of the graphite component, reduce the number of inclusions inside the crystal, and significantly improve the crystal quality.

The application provides a tantalum-based alloy and a preparation method thereof. The preparation method of the tantalum-based alloy comprises the following steps: sequentially laying a first mixed material, a second mixed material and magnesium chips in a reaction crucible in a top-down direction, igniting the reaction crucible to generate an aluminothermic reduction reaction, and then sequentially performing a temperature reduction treatment and a surface finishing treatment to obtain the tantalum-based alloy. The first mixed material comprises aluminum particles, tantalum pentoxide, titanium oxide, potassium chlorate and aluminum fluoride. The second mixed material comprises aluminum particles, tantalum pentoxide, titanium oxide, potassium chlorate, aluminum fluoride and calcium fluoride. By adopting double dosing and covering the magnesium chips with the upper material, the application improves the ignition efficiency, significantly improves the material loss caused by the slow ignition speed and insufficient ignition of the material in the traditional off-oven method, and introduces a titanium source to form an AlTaTi compound, thereby significantly enhancing the alloy uniformity.

The invention relates to the technical field of rare metal preparation, in particular to a method for preparing metal tantalum by adopting a calcium thermal reduction method, which comprises the following steps: S1, material mixing: mixing tantalum pentoxide, calcium powder and calcium chloride according to a preset proportion to obtain a mixture; s2, synthesizing, namely putting the mixture into a high-temperature reaction device, and carrying out calcium thermal reaction, so that the calcium powder and the tantalum pentoxide react to generate tantalum and calcium oxide; s3, separation: after a product obtained in the synthesis step is cooled to room temperature, tantalum is separated from the eutectic of calcium chloride and calcium oxide, and a tantalum block is obtained; s4, smelting: smelting the tantalum block into a tantalum plate under a preset condition; thus, calcium chloride serving as a fluxing agent is added, calcium oxide generated in the reaction and calcium chloride form a liquid eutectic, a liquid environment is provided, and an ion transmission mode among raw materials is converted into solid-liquid mass transfer, so that the lower temperature limit of effective proceeding of the calcium thermal reaction is reduced, the reaction rate of tantalum pentoxide and calcium powder is greatly increased, and the preparation speed of tantalum is increased; the preparation period is shortened.

This invention discloses a ruthenium-based catalyst based on a Ta₂O₅ support, its preparation method, and its applications, belonging to the field of electrode materials technology. The invention employs a process combining hydrothermal loading and high-temperature calcination, using water as the reaction solvent and tantalum pentoxide as the support for ruthenium, applying it to the hydrogen evolution reaction in seawater electrolysis. This catalyst utilizes Lewis acid sites on the Ta₂O₅ surface to promote the dissociation of water molecules, providing a continuous proton supply for the hydrogen evolution reaction, thereby enhancing both catalytic activity and long-term stability in seawater systems. The method employed in this invention is simple and the structure is controllable, demonstrating excellent application potential in seawater electrolysis and possessing significant research and engineering value for promoting the practical application of ruthenium-based catalysts.

The present application relates to non-ferrous metal technical field, specifically to a kind of method for preparing large bulk density of tantalum pentoxide by chemical method, comprising the following steps: (1) adjust acid;(2) heating;(3) heating after fluorotantalate solution is passed into ammonia;(4) second stage ammonia precipitation;(5) static washing;(6) drying, obtain dry tantalum hydroxide;(7) push boat furnace roasting, obtain large bulk density of tantalum pentoxide.The present application uses static continuous washing, without through physical filter pressing, change physical performance parameter.The present application uses push boat furnace static continuous roasting, and the bulk density of tantalum pentoxide grows naturally.The powder of the present application is loose and uniform after roasting, without screening.The present application can efficiently produce the tantalum pentoxide with bulk density greater than 2g / cm 3 .

The present disclosure relates to memristor devices for neuromorphic computing. A memristor device may include a first electrode, an oxide layer, an interface layer fabricated on the oxide layer, and a second electrode fabricated on the interface layer. The first electrode may include a noble metal and / or an inert metal, such as platinum, palladium, iridium, tungsten, molybdenum, ruthenium, etc. The oxide layer may include a dielectric oxide, such as silicon dioxide, hafnium dioxide, tantalum pentoxide, etc. The interface layer may include a discontinuous layer of a  dielectric material,  such as Al2O3, Y2O3, MgO, etc. The second electrode may include one or more metallic materials that may provide metal ions in response to the application of a suitable voltage to the memristor device, such as copper, silver, etc. In some embodiments, the memristor device may further include an interface layer positioned between the first electrode and the oxide layer.

The invention discloses a petuntse composition, ceramic and application, and relates to the technical field of ceramic. The ceramic disclosed by the invention is obtained by sequentially carrying out ageing treatment, sieving treatment, injection molding, airing, drying and sintering treatment on a petuntse composition. The petuntse composition comprises a ceramic waste material A, a ceramic waste material B and modified particles with gallium-coated cuprous oxide as a core and aluminum oxide as a shell in a specific proportion. And the components such as a high-entropy oxide solid solution generated by the reaction of hafnium oxide, tantalum pentoxide, niobium pentoxide, titanium dioxide, zirconium dioxide, chromium sesquioxide and carbon powder, and chromium heptacarbide are introduced, so that the ceramic prepared from the ceramic waste has excellent fracture toughness, bending strength, wear resistance, high temperature resistance and self-repairing ability. Therefore, the method has a wide application prospect.

The application discloses a carbon aerogel-tantalum pentoxide interface evaporation composite material, a preparation method and application thereof, relates to the technical field of carbon aerogel, and first synthesizes an alkali catalyzed phenolic resin sol, after the fluidity of the sol is reduced, under the action of ultrasonic waves, a photocatalyst Ta2O5 is added to make it fully dispersed, then the sol-gel process is completed through acid catalysis and heat treatment to obtain a phenolic resin-Ta2O5 wet gel, secondly, the wet gel is aged, washed and replaced, and dried at normal pressure to obtain a phenolic resin-Ta2O5 organic composite aerogel, and finally, the organic composite aerogel is carbonized at high temperature. The carbon aerogel-tantalum pentoxide interface evaporation composite material prepared by the application has the advantages of complete structure, no cracking, no powder and slag falling, good heat insulation performance, simple preparation process, low raw material cost, low toxicity, low requirement for heat treatment equipment and molds, short preparation period, high safety degree in the production process, and is expected to be applied to industrialized large-scale production.

The utility model discloses a resin lens resistant to ultraviolet radiation. The resin lens comprises a substrate; the first anti-ultraviolet layer is arranged on the outer side of the substrate and comprises a silicon monoxide layer arranged on the outer side of the substrate and a trititanium pentoxide layer arranged on the outer side of the silicon monoxide layer; the second anti-ultraviolet layer is arranged on the inner side of the substrate and comprises a zirconium dioxide layer arranged on the inner side of the substrate and a tantalum pentoxide layer arranged on the outer side of the zirconium dioxide layer; the hardening layer is arranged on the outer side of the first anti-ultraviolet layer; the potassium ion layer is arranged on the outer side of the second anti-ultraviolet layer; the high refraction layer is arranged on the outer sides of the hardening layer and the potassium ion layer; the wear-resistant layer is arranged on the outer side of the high refraction layer; the waterproof layer is arranged on the outer side of the wear-resistant layer. The first uvioresistant layer is arranged on the outer side of the substrate, and the second uvioresistant layer is arranged on the inner side of the substrate, so that the uvioresistant capacity inside and outside the lens is greatly enhanced.

The invention discloses a soldering flux for soft soldering of tantalum materials and a preparation method and application of the soldering flux, and relates to the technical field of soldering, and the soldering flux for soft soldering of the tantalum materials comprises, by mass, 15-25% of ammonium fluotitanate, 10-16% of citric acid, 5-8% of sodium gluconate, 10-16% of glycerin, 5-8% of boric acid, 1-3% of sodium dodecyl benzene sulfonate and the balance absolute ethyl alcohol. The soldering flux for soft soldering of the tantalum material is composed of ammonium fluotitanate, citric acid, sodium gluconate, boric acid, glycerin, sodium dodecyl benzene sulfonate and absolute ethyl alcohol according to the specific mass percent, a tantalum pentoxide film on the surface of a tantalum lead can be effectively damaged, and the welding effect of a positive electrode metal pin of a tantalum capacitor and the tantalum lead is improved.

The invention relates to the technical field of optical fiber sensors, in particular to a double-parameter photonic crystal optical fiber sensor based on surface plasma resonance, which comprises a fiber core and a perfect matching layer coated outside the fiber core, and circular air holes with different sizes are symmetrically distributed in the fiber core; the fiber core is provided with double groove channels, the surface of the upper groove channel is coated with a gold film, and the surface of the lower groove channel is coated with a gold film and a tantalum pentoxide film. According to the invention, dual-channel sensing and dual-parameter measurement can be realized, the refractive index range of an analysis liquid sample to be measured is 1.38-1.4, and the sensitivity of 5000nm / RIU and the resolution of 2 * 10 <-5 > RIU can be obtained; the temperature measurement range of the temperature-sensitive liquid is 20-40 DEG C, and the sensitivity of 4.2 nm / DEG C and the resolution of 0.024 DEG C can be obtained. The sensitivity and the resolution ratio of the sensor are superior to those of an existing sensor, and the sensor has great application prospects in the fields of biomedicine, industrial nondestructive testing and the like.

The present invention discloses a method for preparing a hexagonal tantalum pentoxide single crystal thin film, belonging to the technical field of optoelectronic information functional materials. Using tantalum ethoxide as an organometallic compound material and high-purity oxygen as the oxidizing gas, a twin-free hexagonal tantalum pentoxide single crystal thin film is prepared on a hexagonal lanthanum fluoride single crystal substrate using metal organic chemical vapor deposition equipment. The hexagonal tantalum pentoxide single crystal thin film prepared by the present invention has high single crystal quality and good stability, and therefore has good application prospects in the field of semiconductor devices.

In some implementations, an optical interference filter includes a substrate and one or more sets of layers disposed on the substrate. Each layer set comprises: a first layer comprising at least tantalum and oxygen (e.g., tantalum pentoxide (Ta2O5) material); a second layer including at least aluminum and nitrogen (e.g., aluminum nitride (AlN) material); and a third layer comprising at least hydrogen and silicon (e.g., a silicon hydride (Si: H) material). The second layer is disposed between the first layer and the third layer. In some implementations, the first surface of the second layer is disposed on the surface of the first layer, and the second surface of the second layer is disposed on the surface of the third layer.

The invention discloses an anti-radiation shielding plate and a preparation method thereof. The anti-radiation shielding plate comprises a middle core layer and two surface reinforcing layers, wherein the two surface reinforcing layers are correspondingly compounded on the upper end face and the lower end face of the middle core layer; the middle core layer comprises the following components in percentage by mass: 25%-45% of tantalum pentoxide (Ta2O5), 26%-46% of bismuth trioxide (Bi2O3), 4%-16% of thulium oxide (TM2O3), 8%-22% of natural rubber (NR) and 2%-6% of a coupling additive; the surface reinforcing layer comprises the following components in percentage by mass: 5%-25% of boron carbide (B4C), 2%-10% of thulium oxide (TM2O3), 65%-85% of natural rubber (NR) and 2%-6% of a coupling additive. The radiation-proof shielding plate has the advantages that through function layering, material cooperation and matrix supporting, the triple core advantages of full-spectrum radiation protection, mechanical property balance and environment-friendly and convenient processing are achieved, the problems that a traditional shielding material is single in function, unbalanced in performance and serious in pollution are solved, industrial production and actual requirements are taken into consideration, and the radiation-proof shielding plate is worthy of popularization and application. And the method can adapt to multi-scene application and is high in use adaptability.

The invention relates to a rare earth oxide high-temperature thermistor material suitable for temperature measurement and control of an aero-engine and a preparation method thereof, the thermistor takes holmium oxide, erbium trioxide, thulium trioxide, ytterbium trioxide, lutetium trioxide and tantalum pentoxide as raw materials, the chemical composition is RETaO4, Ln = Ho, Er, Tm, Yb, Rm = 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 16, 17, 17, 17, 17, 17, 17, 17, 17, 17, 17, 17, 17, 17, 17, 17, 17, 17, 17, 17 The material constant B value range is 10565-15673 K, the resistivity is 2.20 * 10 < 5 >-1.295 * 10 < 6 > omega.cm at the temperature of 500 DEG C, the linear determination coefficient R2 of ln rho and 1000 / T is greater than 99%, the resistance drift rate is between 3.01% and 60%, and the absolute value of the resistance drift rate of (HoErTmYbLu) 1 / 5TaO4 after aging for 50 hours at the temperature of 1500 DEG C is less than 3.01%. The high-temperature thermistor prepared by the preparation method is stable in resistance performance and good in consistency, has an excellent negative temperature coefficient thermosensitive characteristic in a wide temperature range of 400-1500 DEG C, and is suitable for manufacturing a high-performance high-temperature thermistor suitable for temperature measurement and control of an aero-engine.

The invention provides a modified copper-chromium alloy contact material, a preparation method, an electrical contact and application of the modified copper-chromium alloy contact material, and the modified copper-chromium alloy contact material comprises the following components in percentage by weight: 43-55.4% of copper, 0.03-0.07% of tantalum pentoxide and the balance of chromium and inevitable impurities. According to the modified copper-chromium alloy contact material disclosed by the invention, under the synergistic matching adjustment of a formula system taking tantalum pentoxide as a reinforcing phase and a preparation process, the synergistic improvement of force, electricity, frictional wear resistance and arc ablation resistance is realized, the modified copper-chromium alloy contact material has excellent comprehensive performance, and the conductivity of the modified copper-chromium alloy contact material disclosed by the invention is greater than or equal to 42.3% IACS (20 DEG C), and the conductivity of the modified copper-chromium alloy contact material is greater than or equal to 42.3% IACS (20 DEG C). The conductivity (Ms / m) is greater than or equal to 24.5, the hardness (HB) is greater than or equal to 102, and the arc ablation resistance is improved by greater than or equal to 25%. And the requirements of ablation wear and service reliability of the electric contact of the arc extinguish chamber of the vacuum circuit breaker applied to the voltage class of 72.5 kV and above are met.

The invention provides a tantalum oxide optical coating material, the tantalum oxide optical coating material is black oxygen-lost tantalum pentoxide, the main phase is alpha-Ta2O5, and the phase purity of alpha-Ta2O5 is greater than or equal to 96%. The high-tantalum-oxide optical coating material is high in phase purity, the transmittance of a coated film layer is high, and the problems that the air pressure is unstable and the coating efficiency is reduced due to low phase purity in the coating pre-melting stage can be greatly solved; the invention also provides a preparation method of the tantalum oxide optical coating material, which comprises the following steps: granulating, crushing and sieving tantalum pentoxide powder with a certain particle size to obtain a granulated material; carrying out first compression molding on the granulation material to obtain a first molding material; the first forming material is crushed into particles and sieved, and particles with the particle size being 1-5 mm are obtained; performing primary sintering on the particles to obtain a first sintered material; performing vacuum sintering on the first sintered material to obtain a second sintered material; and screening the second sintered material, and assembling the second sintered material into a particle aggregate to obtain the tantalum pentoxide optical coating material.

The invention relates to the technical field of rare metal purification, and discloses an electronic-grade tantalum oxide-oriented method for deeply removing tungsten and molybdenum from a fluorine tantalic acid solution, which comprises the following steps of: adding peroxide into a fluorine tantalic acid raw material solution containing tungsten and molybdenum to carry out oxidative complexation, and then adding ammonia to adjust the pH value of the solution to obtain a precipitate; and after solid-liquid separation, drying and roasting to obtain the high-purity tantalum oxide. According to the method, deep removal of tungsten and molybdenum in the fluorine tantalic acid solution can be realized, and the obtained tantalum oxide product can meet the requirement for preparing a 5N-grade high-purity tantalum oxide product; the method provided by the invention has remarkable advantages in reagent selection, does not need to use a special reagent with high price, and can realize a target treatment effect only by consuming part of peroxy ions. By means of the design, reagent cost is greatly reduced, pollution is reduced due to the fact that use of complex chemical reagents is avoided, and meanwhile the quality of final products can be guaranteed.

Various embodiments may relate to a hydrogen gas sensor. The hydrogen gas sensor may include a first electrode for sensing hydrogen gas. The hydrogen gas sensor may also include a second electrode. The hydrogen gas sensor may further include a dielectric layer between the first electrode and the second electrode. The dielectric layer may include or consist of tantalum pentoxide (Ta2O5). The hydrogen gas sensor may additionally include an interlayer between the first electrode and the dielectric layer, the interlayer including or consisting of titanium (Ti). The first electrode may be configured to dissociate hydrogen gas into hydrogen atoms. The interlayer may be configured to form bonds with the hydrogen atoms.

The invention relates to the technical field of impurities in metal oxides, in particular to a method for detecting impurity elements in tantalum pentoxide, which comprises the following steps: adding quantitative dried tantalum pentoxide powder into a polytetrafluoroethylene digestion bottle; adding hydrofluoric acid and nitric acid, sealing the bottle body, putting the polytetrafluoroethylene digestion bottle into holes of a porous electric heating plate, and carrying out gradient heating to dissolve the tantalum pentoxide powder, so as to obtain a fluorine tantalum salt solution; the fluorine complex tantalum salt solution is transferred into a separating funnel, sulfuric acid is added for oscillation, then an extracting agent is added for oscillation and standing, after complete phase separation, a water phase solution and an organic phase solution are obtained, the water phase solution mainly comprises impurity elements, and the organic phase solution mainly comprises a tantalum matrix; the water-phase solution is collected into a plastic volumetric flask by rotating a cock of the separating funnel; taking a preset amount of water phase solution from the plastic volumetric flask as a to-be-detected sample, and detecting the content of impurity elements in the to-be-detected sample by using an inductively coupled plasma emission spectrometer.