Patents
Literature
Hiro is an intelligent assistant for R&D personnel, combined with Patent DNA, to facilitate innovative research.
Hiro

40results about How to "Uniform electric field strength" patented technology

Cleaning type heat-treatment oil smoke collecting and arranging equipment

The invention relates to a clean-type hot-treatment system for collecting and exhausting oil fume, which is characterized by comprising an oil fume inlet pipe (1), a temperature cooler (2) with heat exchange, an oil fume purifier (3), an exhaust fan (4) and a controller (5); the air outlet of the oil fume inlet pipe (1) is connected with the air inlet of the temperature cooler (2) with heat exchange; the air outlet of the temperature cooler (2) with heat exchange is connected with the air inlet of the oil fume purifier (3), and the air outlet of the oil fume purifier (3) is connected with the air inlet of the exhaust fan (4); the signal output end of the controller (5) is connected with the control signal input ends of both the oil fume purifier(3) and the exhaust fan (4); the signal input end of the controller (5) is connected with the signal output end of a temperature detector which is connected in the oil fume purifier (3). The heat of the oil fume is utilized by the invention, which is beneficial to save energy. The system of the invention has the advantages of wide application range, high working efficiency, high efficiency of dust collection and saving energy, which is especially applicable to the collection of oil fume particles that are smaller in particle diameter and lighter in weight.
Owner:GUANGDONG STRONG METAL TECH

Antenna arrangement structure for vehicle communication apparatus

An interior antenna (29, 29) of a vehicle communication apparatus (21) for performing wireless communication with a portable terminal device (22) present inside a cabin (11) is disposed in the cabin. The interior antenna includes left and right leaky coaxial cables that can transmit high-frequency band radio waves into the cabin. The left and right leaky coaxial cables are positioned under the cabin and inside left and right door inner panels (72) in a vehicle width direction, either above left and right side sills (51) or at end portions in the vehicle width direction above a floor panel (57), and extend in a vehicle front-rear direction.
Owner:HONDA MOTOR CO LTD

Ferroelectric medium-based negative capacitance MoS2 transistor and preparation method thereof

The invention discloses a ferroelectric medium-based negative capacitance MoS2 transistor and a preparation method thereof. The preparation method comprises the steps of growing a MoS2 thin film on asurface of a SiO2 substrate; sequentially growing a first High-K layer, a first TiN layer, a ferroelectric thin film layer, a second TiN layer, a second High-K layer which are used as a grid dielectric layer on a surface of the MoS2 thin film; growing a third TiN layer and a Ti / Au metal layer which are used a grid electrode on the grid dielectric layer; and growing two layers of Al metal which areused a source electrode and a drain electrode on the MoS2 thin film layer. The TiN layers wrap the ferroelectric grid dielectric thin film layer, the metal TiN is used for balancing an additional electric field generated by population and turnover of the ferroelectric grid dielectric thin film again, the additional electric field is uniformly applied to the MoS2 thin film layer, the situations that the device is started slowly and a sub-threshold is relatively larger caused by different MoS2 inversion conditions of each point in a channel are prevented, and meanwhile, the situation that the point is easy to break down when point field intensity of the High-K layers is relatively large is also prevented.
Owner:贵溪穿越光电科技有限公司

High voltage pulse electric field sterilization common-field treatment chamber with adjustable electrode distance

The invention discloses a high voltage pulse electric field sterilization common-field treatment chamber with adjustable electrode distance. The treatment chamber consists of two metallic hollow tubular electrodes and an insulator isolation tube, wherein the insulator isolation tube is positioned in a treatment cavity formed between the two metallic hollow tubular electrodes. The metallic hollow tubular grounding electrodes are in threaded fit with the insulator isolation tube, so that the adjustability of the electrode distance in the common-field treatment chamber is realized. The inner ports of the metallic hollow tubular electrodes in the treatment chamber are rounded, so that the strength of a peak electric field nearby the electrodes is reduced, the 'discharge' problem caused by over high local electric field in the treatment chamber is solved, and the electric field in the flowing direction of a material is distributed relatively uniformly. The treatment chamber is simple in structure, low in cost, convenient to process and convenient to disassemble and assemble; the adjustability of the electrode distance in the common-field treatment chamber is realized; and the electrode distance in the treatment chamber can be adjusted according to different application requirements, so that the electric field strength and the electric field distribution in the treatment chamber are improved.
Owner:JIANGNAN UNIV

Vacuum arc-extinguishing chamber, contact assembly thereof and current coils used for contact assembly

The invention provides a vacuum arc-extinguishing chamber, a contact assembly thereof and current coils used for the contact assembly. The current coils comprise two sub coils which extend in the circumferential direction and are disposed in parallel. Each sub coil comprises an upper coil section and a lower coil section which are arranged in an up-down staggered manner and are electrically connected in series. The two lower coil sections are two one-second turns of coil sections which are symmetrically arranged around a central line of the current coils. Each of the two sub coils is a three-fourths turn of coil section formed by a one-fourth turn of coil section and a one-second turn of coil section. The current of each of two parallel branches formed by the two sub coils flows through the circumferential path of the three-fourths turn of coil section, the current path is short, the integral circuit is relatively small, and the upper and lower coil sections are symmetrically arranged around the center of the current coils, so that the distribution of magnetic fields generated by the current coils is relatively uniform.
Owner:TIANJIN PINGGAO INTELLIGENT ELECTRIC +3

Vacuum arc-extinguishing chamber, coil-type contact element and current coil

The invention provides a vacuum arc-extinguishing chamber, a coil-type contact element and a current coil. The current coil comprises two branch coils extending in the circumferential direction and arranged in parallel. Each branch coil comprises an upper coil section and a lower coil section which are distributed to be staggered in an upper direction and a lower direction and in series conductive connection. The two upper coil sections are two half turning coil sections arranged symmetrically with respect to the center line of the current coil. The two lower coil sections of the two branch coils are two quarter turning coil sections arranged symmetrically with respect to the center line of the current coil. Each branch coil is a three-fourths turning coil section formed by the quarter turning coil section and the half turning coil section. A current in each of two parallel connection branches formed by the two branch coils passes by the circumferential path of the three-fourths turning coil section, the current path is short, the whole circuit is small, the upper coil section and the lower coil section are arranged in central symmetry with respect to the center line of the current coil respectively, and thus distribution of the magnetic field generated by the current coil is uniform.
Owner:TIANJIN PINGGAO INTELLIGENT ELECTRIC +3

Semiconductor device

The conventional Schottky barrier diode has a problem that the increase in leak current is evitable for realizing low VF due to the VF and IR characteristics of the Schottky barrier diode are in a trade-off relation. In the semiconductor device of this invention, pillar shaped p type semiconductor regions that reach an n+ type semiconductor substrate are provided in an n- type semiconductor layer, so that when a reverse voltage is applied, the part of the n- type semiconductor layer between the p type semiconductor regions is filled completely by a depletion layer expanding from the p type semiconductor region and in the horizontal direction of the substrate. In other words, the leakage of the leak current generated at the Schottky junction interface to the cathode side can be suppressed. Moreover, since the impurity concentration in the n- type semiconductor layer can be increased to the extent that the depletion layer expanding from the adjacent p type semiconductor regions can still pinch off, the low VF can be realized, and a predetermined breakdown strength can be secured as long as the depletion layer can pinch off.
Owner:SANYO ELECTRIC CO LTD

Outdoor primary and secondary fusion isolation knife built-in intelligent post switch

The invention discloses an outdoor primary and secondary fusion isolation knife built-in intelligent post switch, which comprises an aluminum alloy base and an aluminum alloy housing matched with thealuminum alloy base, The aluminum alloy housing is fastened on the aluminum alloy base to form an outer enclosure box, a plurality of isolation knife main circuit driving structures are arranged in the outer enclosure box, a left current sensor is arranged at the inner end of the left outlet terminal, and a right current sensor is arranged at the inner end of the right outlet terminal; The inner end of the outer enclosure is provided with a hollow chamber, A power operating mechanism is installed in the hollow chamber, The power operation mechanism comprises a front panel and a rear panel, a component mounting chamber is formed between the front panel and the rear panel, and an isolation power mechanism for controlling the separation knife to separate and close, a circuit breaker power mechanism for controlling the circuit breaker to be on and off, and a circuit breaker closing energy storage mechanism for circuit breaker to be on and off for energy storage are installed in the component mounting chamber; The whole power operation mechanism can provide power source to the circuit breaker and the isolating knife separately or simultaneously.
Owner:XUCHANG YONGXIN ELECTRIC

High-voltage switch with three-phase bodies in triangular distribution and high-voltage switch cabinet

ActiveCN102543548AUniform distribution of electric field strengthReasonable operation and controlBus-bar/wiring layoutsAir-break switchesElectrical field strengthThree-phase
The invention provides a high-voltage switch with three-phase bodies in triangular distribution. The high-voltage switch comprises the three-phase bodies, an operating mechanism and a transmission mechanism, wherein the three-phase bodies are in triangular distribution; any body comprises an isolating stationary contact, an isolating crank arm, an isolating movable contact, a wire incoming flexible connector and a switch body; the isolating stationary contact is positioned at the top of the body; the isolating movable contact is arranged at the inner end of the isolating crank arm; the isolating crank arm is pivoted below the isolating stationary contact; when the isolating crank arm rotates to a preset position, the isolating movable contact is contacted with the isolating stationary contact and closed; and the switch body is positioned below the isolating movable contact and connected with the outer end of the isolating crank arm through the wire incoming flexible connector. By adoption of a structure that the three-phase bodies are in triangular distribution, the electric field intensity of the high-voltage switch is uniformly distributed. With a reasonable transmission mechanism, the high-voltage switch can operate more conveniently and more reliably.
Owner:STATE GRID CORP OF CHINA +1

Single-phase pouring type combination measuring dry transformer

InactiveCN104240929AReinforced internal and external insulationMoisture-proofTransformersTransformers/inductances casingsEngineeringThermal stability
The invention relates to a single-phase pouring type combination measuring dry transformer. The single-phase pouring type combination measuring dry transformer comprises a resin case, a current transformer and a voltage transformer, wherein the current transformer is arranged at the upper part of the left end of the resin case; the two terminals of the primary coil of the current transformer are respectively connected to two conducting rods vertically arranged at the left end of the resin case; the voltage transformer is arranged at the lower part of the right end of the resin case; the primary winding of the voltage transformer is connected to any terminal of the primary coil of the current transformer in the resin case; the secondary winding of the voltage transformer is connected to a plug column vertically arranged at the upper part of the right end of the resin case; the winding direction of the primary coil of the current transformer is parallel to the winding direction of the primary winding of the voltage transformer. The single-phase pouring type combination measuring dry transformer is simple in structure, convenient to produce, small in occupied space, large in creep distance, uniform in electric field distribution and high in measuring accuracy, has higher dynamic thermal stability and better overcurrent resistance, and can be suitable for being used in a high-pollution and high-altitude environment.
Owner:江苏科兴电器有限公司

Electrostatic spinning device for batch preparation of orderly nanofibers

The invention discloses an electrostatic spinning device for multi-jet batch preparation of orderly nanofibers. The device comprises a quantitative liquid supply pump, a liquid guiding pipe, a liquid inlet plate, a nozzle plate, an insulating sleeve, an upper porous plate, a lower porous plate, a roller, a support, a rotating shaft, a coupler, a motor, a pinpoint ground electrode, an X-Y moving platform and a high-voltage power supply. According to the device, multiple jets are generated through multiple nozzles to increase yield; the whipping range of jets is restrained by the electrode which is assisted by the upper and lower porous plates, so that the fibers can be easily subjected to orderly controlled deposition; linkage of rotation and translation can be generated due to the X-Y moving platform and roller collection method; the pinpoint ground electrode is used for focusing nanofiber deposition to carry out accurate and orderly winding collection of nanofibers; the runner optimizing design is introduced into the multiple jets, so that the flowrate at each nozzle is uniform, and the uniformity of the nanofiber diameter can be improved; the nozzles are coated with an insulating material and are electrically insulated, so that the electrostatic inhibiting effect among the nozzles can be reduced, and the intensities of electric fields at the nozzles can be balanced.
Owner:中科贝思达(厦门)环保科技股份有限公司

High-voltage switch with three-phase bodies in delta-shaped distribution and high-voltage switch cabinet

The invention provides a high-voltage switch with three-phase bodies in delta-shaped distribution. The switch comprises three-phase bodies, an operating mechanism and a transmission mechanism, whereinthe three-phase bodies are delta-shaped distribution; any of the bodies comprises an isolated static contact, an isolated crank arm, an isolated moving contact, an incoming soft connection and a switch body; the isolated static contact is located at the top of the body, the isolated moving contact is disposed at the inner end of the isolated crank arm, the isolated crank arm is pivotally connected below the isolated static contact and is in contact with the isolated static contact at the position where the isolated crank arm is rotated to a predetermined position, and the switch body is located below the isolated moving contact and is connected to the external end of the crank arm by the incoming soft connection. The high-voltage switch adopts a structure of three-phase bodies in delta-shaped distribution to realize uniform distribution of electric field intensity of the high-voltage switch, and a reasonable transmission mechanism is designed to make the operation more convenient andreliable.
Owner:宁波永耀信息科技有限公司

Technology for forming oxidation films with consistent thickness

The invention discloses a technology for forming oxidation films with consistent thickness. The technology comprises the following steps: (1) uniformly spot-welding a sintered tantalum anode block on a conductive metal bar; (2) placing a bracket with the conductive metal bar in an electrolytic cell; (3) manufacturing a lead frame in a shape of a Chinese character 'wang'; (4) placing the lead frame in the shape of the Chinese character 'wang' on the bracket in a superposed manner and compactly contacting with the metal bar spot-welded with the tantalum anode block; (5) connecting the anode of a power supply to the central position of the lead frame in the shape of the Chinese character Wang, and connecting the cathode of the power supply to the electrolytic cell; and (6) connecting the power supply for medium film forming treatment. The technology provided by the invention has the beneficial effects that the lead frame is manufactured by using a lead, so that the voltage difference between the output end of the power supply and the metal anode block of a valve is effectively reduced, the voltage applied to the anode block is guaranteed, and meanwhile, a current is applied from a terminal of a center shaft of the lead frame in the shape of the Chinese character 'wang', so that the paths of the current flowing to all directions are same, the electric field intensity is uniform, and the consistency of thickness of the generated oxidation films is guaranteed.
Owner:CHINA ZHENHUA GRP XINYUN ELECTRONICS COMP ANDDEV CO LTD

Semiconductor process chamber

ActiveCN112501591AUniform distribution of electric field strengthAvoid high intensityChemical vapor deposition coatingPhysicsComposite material
The invention discloses a semiconductor process chamber which comprises a chamber body, an upper electrode, a lower electrode, a shielding hood and an impedance adjusting mechanism, wherein the shielding hood is arranged on the chamber body and the shielding hood and the chamber body form an accommodation cavity, the upper electrode, the lower electrode and the impedance adjusting mechanism are arranged in the accommodation cavity, the upper electrode and the lower electrode are arranged oppositely, the upper electrode is located between the lower electrode and the shielding hood and is arranged in an electrically suspended manner, and the shielding hood and the lower electrode are earthed; the impedance adjusting mechanism is movably connected to the shielding hood and is electrically connected to the shielding hood, and the impedance adjusting mechanism can move far away from or close to the shielding hood to adjust the distance between the impedance adjusting mechanism and the upperelectrode; and / or, the impedance adjusting mechanism can move parallel to the shielding hood to change a relative area between the impedance adjusting mechanism and the upper electrode. According tothe scheme, the problem that the wafer coating uniformity is poor can be solved.
Owner:BEIJING NAURA MICROELECTRONICS EQUIP CO LTD

Energy-saving and environment-friendly high-voltage closed bus

InactiveCN102097173AEliminates complex commutation considerations necessary for uneven lossesEasy to useSingle bars/rods/wires/strips conductorsPower cablesBusbarThree-phase
The invention provides an energy-saving and environment-friendly high-voltage closed bus. The bus comprises a shell and three busbars, wherein the three busbars are uniformly and fixedly arranged in the shell; and the included angle alpha between the adjacent busbars is 120 degrees. The bus has the following beneficial effects: as the three busbars are uniformly and fixedly arranged in the shell and the included angle alpha between the adjacent busbars is 120 degrees, the synthetic magnetic potential among the busbars is zero; and during distance power transmission, the three busbars are uniformly symmetric, thus avoiding the problem of complex phase change needing to be considered due to the proximity effect and nonuniform three-phase power transmission loss, so the bus is more convenient and safer to use.
Owner:JIANGSU JIANGCHENG ELECTRIC

Semiconductor process equipment and gas distribution device thereof

The invention discloses semiconductor processing equipment and a gas distribution device thereof, and relates to the technical field of semiconductor processing equipment. The semiconductor process equipment comprises a cavity and a base arranged in the cavity. The gas distribution device comprises a gas distribution plate, and the gas distribution plate is arranged in the cavity and is opposite to the base. A plurality of gas distribution holes are formed in the gas distribution plate and are used for inputting process gas into the cavity; the side, facing the base, of the gas distribution plate is provided with a concave area and a convex area, the distance between the concave area and the base is a first distance, the distance between the convex area and the base is a second distance, and the first distance is larger than the second distance. According to the scheme, the concave area and the convex area enable the distance between each part in the gas distribution plate and the base to be different, so that the electric field between the gas distribution plate and the base is adjusted, the intensity of the electric field between the gas distribution plate and the base is more uniform, and the density of the insulating medium film is more uniform.
Owner:BEIJING NAURA MICROELECTRONICS EQUIP CO LTD

Porous medium auxiliary molten salt electrolysis metal refining device

The invention discloses a porous medium auxiliary molten salt electrolysis metal refining device, and belongs to the field of molten salt electrolysis metal refining devices. The device comprises a shell, an outer barrel and an inner barrel, wherein a through hole is formed in a barrel body of the inner barrel; an electrode is fixed on the inner wall of the inner barrel; the inner barrel is positioned in the outer barrel; a heating device is arranged on the outer side of the outer barrel; and the outer barrel is positioned in the shell. Multiple cylindrical projections are arranged on the inner wall of the through hole; lattices are arranged on the end surfaces of two ends of the through hole; and the radius of the end surfaces of two ends of the through hole is smaller than the radius of the cross section of the middle part of the through hole. The device aims to overcome the defect of incapability of smoothly performing electrolysis refining due to incapability of fixing electrolytes between crude metal and refined metal with close densities in the molten salt electrolysis refining of metal melts in the prior art, realizes fixation of the electrolytes between the crude metal and the refined metal with close densities, widens the application range of a molten salt electrolysis refining technology, and improves the metal refining effect.
Owner:ANHUI UNIVERSITY OF TECHNOLOGY

A built-in isolating knife structure for outdoor intelligent post switch

The invention discloses a built-in isolating knife structure for an outdoor intelligent post switch, which comprises an aluminum alloy base and an aluminum alloy housing matched with the aluminum alloy base, The aluminum alloy housing is fastened on the aluminum alloy base to form the outer enclosure box, A plurality of isolate knife main circuit drive structure is arranged in parallel and in series in the outer enclosure box, A left outlet terminal is arranged at that left end of the driving structure of the isolate knife main circuit, a right outlet terminal is arranged at the right end of the driving structure of the isolating knife main circuit, a left voltage sensor and a right voltage sensor are arranged on the driving structure of the isolating knife main circuit, a left current sensor is arranged at the inner end of the left outlet terminal, and a right current sensor is arranged at the inner end of the right outlet terminal; The outer enclosure box and the insulation box are arranged in two layers, and the whole structure is box-type, with built-in isolation knife and voltage / current sensor; the main drive is linearized; the electric field strength is uniform; the arc extinguishing chamber adopts vacuum arc extinguishing chamber; and the insulation medium adopts environment-friendly gas insulation.
Owner:XUCHANG YONGXIN ELECTRIC

Insulation sealing plug

The invention relates to an insulation sealing plug which comprises a main insulator (1) and a top sealing flange (2), wherein the top sealing flange (2) is arranged at one end of the main insulator (1), wherein a bottom sealing flange (3) is arranged at the other end of the main insulator (1); an air discharge device is arranged inside the main insulator (1); and the air discharge device is embedded inside the main insulator (1). Therefore, the insulation sealing plug has the advantages that an air discharge pipeline is wound inside an insulation material, under the condition that normal insulation condition is ensured, the air generated inside electric equipment is discharged at any time so as to ensure the stable pressure inside the equipment; the plug sealing flange and the insulation material are integrally made; the mechanical structure is reliable in strength; the electric field intensity is uniform; and meanwhile, external inserted type electric equipment can be configured, so that the insulation sealing plug is convenient to install and maintain.
Owner:WUHAN CREATIVE ELECTRIC

Negative capacitance molybdenum disulfide transistor based on ferroelectric gate dielectric and preparation method thereof

The invention discloses a ferroelectric medium-based negative capacitance MoS2 transistor and a preparation method thereof. The preparation method comprises the steps of growing a MoS2 thin film on asurface of a SiO2 substrate; sequentially growing a first High-K layer, a first TiN layer, a ferroelectric thin film layer, a second TiN layer, a second High-K layer which are used as a grid dielectric layer on a surface of the MoS2 thin film; growing a third TiN layer and a Ti / Au metal layer which are used a grid electrode on the grid dielectric layer; and growing two layers of Al metal which areused a source electrode and a drain electrode on the MoS2 thin film layer. The TiN layers wrap the ferroelectric grid dielectric thin film layer, the metal TiN is used for balancing an additional electric field generated by population and turnover of the ferroelectric grid dielectric thin film again, the additional electric field is uniformly applied to the MoS2 thin film layer, the situations that the device is started slowly and a sub-threshold is relatively larger caused by different MoS2 inversion conditions of each point in a channel are prevented, and meanwhile, the situation that the point is easy to break down when point field intensity of the High-K layers is relatively large is also prevented.
Owner:贵溪穿越光电科技有限公司

An intelligent water purifier that uses electric field adsorption to remove heavy metals in water

The invention relates to the field of water purifiers, and discloses an intelligent water purifier that uses electric field adsorption to remove heavy metals in water. The filter element includes a honeycomb tubular adsorption electrode and a conical electrode, and a trapezoidal water flow gap is formed between the two electrodes. The positive and negative outputs of the intelligent control constant current power supply module are respectively connected to the honeycomb tubular adsorption electrode and the conical electrode. The control system The signal input end of the sensor is connected to the water TDS sensor, and the control output end is connected to the intelligent control constant current power supply module. The intelligent water purifier of the present invention absorbs heavy metals in water through the electric field, and through the detection and intelligent calculation of the water TDS value, it always controls the most reasonable electric field between the electrodes; at the same time, the water purifier filter element used in the present invention can The distance between the electrodes is gradually shortened as the medium and heavy metals are continuously reduced, and the electric field strength is increased to achieve a uniform adsorption effect.
Owner:JIANGMEN TENGFEI TECH LTD

Reflection-permeation array substrate and method for manufacturing same

The invention relates to an anti-penetration typed array substrate and a preparation method thereof; the anti-penetration typed array substrate comprises a soft substrate and an array mainbody which is arranged on the soft substrate; the soft substrate is provided with a penetration area and a reflection area; the reflection area of the soft substrate forms an emboss which is provided with a reflection plate; the emboss, the reflection plate and the array mainbody are arranged on the same surface of the soft substrate; the preparation method of the anti-penetration typed array substrate comprises the steps as follows: the emboss is formed on the soft substrate and the array mainbody is formed on the soft substrate; wherein, the emboss is formed on the soft substrate by the detailed steps as follows: step 101: the soft substrate and a neilsbed are arranged; the soft substrate is provided with the penetration area and the reflection area; the neilsbed is heated to 150-200 DEG C; step 102: the neilsbed is pressed and stamped on the reflection area of the soft substrate to form the emboss; and step 103: the reflection is formed on the emboss. The anti-penetration typed array substrate and the preparation method thereof solve the problem that all parameters of the anti-penetration typed array substrate of the prior art are greatly difficult to be arranged and reduce the preparation cost of the anti-penetration typed array substrate.
Owner:BOE TECH GRP CO LTD +1

Resin insulated dry-type oblong pancake coil and its winding method

ActiveCN105023745BReduce the amount of iron coreReduce manufacturing costCoils manufactureEpoxyElectrical field strength
The invention discloses a resin-insulation dry-type long-round-cake-shaped coil. The resin-insulation dry-type long-round-cake-shaped coil comprises end insulators, wires, an inner surface insulator, an outer surface insulator and line outlet terminals. According to the resin-insulation dry-type long-round-cake-shaped coil and a winding method, the use amount of an iron core of a transformer is reduced, the manufacturing cost is reduced by about 12%, and the no-load losses, the no-load current, the noise and the like of the transformer are optimized; due to a continuously-arranged coil structure, the wire filling coefficient is increased, the heat dissipation performance is good, the overloading capacity is higher, the electric field intensity in the coil is balanced, partial discharging is reduced, convenience is brought to pouring of epoxy resin, air holes, shrinkage porosity, cracks and the like are not prone to occurrence, the safety performance of the transformer is improved, and losses are reduced; as non-full-turn design is adopted for the portions, close to the ends, of the coil, the electric field intensity is optimized.
Owner:LUTE ELECTRIC

Reflection-permeation array substrate and method for manufacturing same

ActiveCN101398558BOvercoming the problem of excessive difficulty in parameter settingOvercoming rising manufacturing costsPhotomechanical apparatusNon-linear opticsEngineeringMaterials science
The invention relates to an anti-penetration typed array substrate and a preparation method thereof; the anti-penetration typed array substrate comprises a soft substrate and an array mainbody which is arranged on the soft substrate; the soft substrate is provided with a penetration area and a reflection area; the reflection area of the soft substrate forms an emboss which is provided with a reflection plate; the emboss, the reflection plate and the array mainbody are arranged on the same surface of the soft substrate; the preparation method of the anti-penetration typed array substrate comprises the steps as follows: the emboss is formed on the soft substrate and the array mainbody is formed on the soft substrate; wherein, the emboss is formed on the soft substrate by the detailed steps as follows: step 101: the soft substrate and a neilsbed are arranged; the soft substrate is provided with the penetration area and the reflection area; the neilsbed is heated to 150-200 DEG C; step 102: the neilsbed is pressed and stamped on the reflection area of the soft substrate to form the emboss; and step 103: the reflection is formed on the emboss. The anti-penetration typed array substrateand the preparation method thereof solve the problem that all parameters of the anti-penetration typed array substrate of the prior art are greatly difficult to be arranged and reduce the preparationcost of the anti-penetration typed array substrate.
Owner:BOE TECH GRP CO LTD +1

Silicon carbide Schottky diode and preparation method thereof

The invention provides a Schottky diode and a preparation method thereof. The Schottky diode comprises a substrate and a plurality of P-type junctions. Each P-type junction comprises a first end partand a second end part which are opposite to each other, and the P-type junction is embedded in the substrate so that the second end part is located in the substrate, and the adjacent P-type junctionsare arranged at intervals. The connection line connecting the first end part and the second end part and located on the side surface of the P-junctions is a smooth arc line. With application of the structure that the connection line connecting the first end part and the second end part and located on the side surface of the P-type junctions is the smooth arc line, the electric field strength injected into the edge of the P-type junctions is more uniform, and the reverse withstand voltage and the reliability of the silicon carbide Schottky diode chip can be further improved.
Owner:GLOBAL ENERGY INTERCONNECTION RES INST CO LTD +2

Magnetic assembly

ActiveCN108987038AHomogenization of electric field strengthReduced risk of partial discharge phenomenaWindings insulation shape/form/constructionTransformers/inductances coils/windings/connectionsMagnetic coreHigh pressure
The invention provides a magnetic assembly with high reliability which is used for medium and high voltage electronic systems. The magnetic assembly includes a magnetic core and windings. The magneticcore includes an upper cover plate, a lower cover plate and at least one winding column arranged between the upper cover plate and the lower cover plate. Each winding column is prismatic and is provided with at least three side surfaces. Any two of the at least three side surfaces are intersected to form at least two longitudinal edges. The longitudinal edges are arranged along the longitudinal direction of the winding column. A first semi-conductive component is arranged at a position corresponding to the longitudinal edges between each winding column and the windings.
Owner:DELTA ELECTRONICS INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products