42results about How to "Strong electric field" patented technology

The invention relates to a semiconductor device and a fabrication method thereof. A semiconductor device according to an aspect of the invention comprising: a semiconductor layer on a substrate; an isolation layer on the semiconductor layer; a source and a drain which are in contact with the semiconductor layer, each of the source and the drain comprises multiple fingers, and the multiple fingers of the source intersect the multiple fingers of the drain; and a gate on the isolation layer, the gate is located between the source and the drain and comprises a closed ring structure which encircles the multiple fingers of the source and the drain.

An electron gun for an electron microscope or similar device includes a field emitter cathode having a field emitter protrusion extending from the output surface of a monocrystalline silicon substrate, and electrodes configured to enhance the emission of electrons from a tip portion of the field emitter protrusion to generate a primary electron beam. A thin, contiguous SiC layer is disposed directly on at least the tip portion of the field emitter protrusion using a process that minimizes oxidation and defects in the SiC layer. Optional gate layers may be placed at, slightly lower than or slightly higher than the height of the field emitter tip portion to achieve high emission current and fast and accurate control of the primary emission beam. The field emitter can be p-type doped and configured to operate in a reverse bias mode, or the field emitter can be n-type doped.

The invention provides a waveguide direct-feed microwave plasma torch device, which is composed of a waveguide part, a tuning and auxiliary part, and a coaxial torch part. The waveguide part includes a gradient waveguide and a narrow-side compression waveguide; Tube, middle tube, inner tube, adjusting stud and coaxial centering washer; tuning and auxiliary parts include waveguide short-circuit sliding end, torch reflection tuning end and torch upper adjustment end, wherein the waveguide short-circuit sliding end is composed of waveguide short-circuit board Composed of sliding rods, the torch reflection tuning end includes adjustment studs and reflection plates. In the invention, microwave energy is directly fed into the metal coaxial torch through the tapered waveguide and the narrow-side waveguide, and the formed plasma has a central channel, which facilitates the introduction of samples and enhances the tolerance to samples. The device eliminates coaxial cables, coupling rings, etc., improves coupling efficiency, and expands the power of the torch tube. It can be used as an ionization source for atomizers and atomic mass spectrometers, or for the decomposition and treatment of harmful compounds and garbage.

The invention relates to a piezoresistor and a manufacturing process thereof. The piezoresistor is composed of a ceramic substrate, a leading-out end, an electrode layer and an insulating layer, wherein a concave area, namely, an electrode positioning area, is prefabricated on the ceramic substrate; the leading-out end is arranged on an electrode; the insulating layer is used for locally or wholly packaging the ceramic substrate, the electrode layer and the leading-out end; in the manner of sputtering or spraying electrode, an electrode hole of a mask plate is positioned and coated on a concave opening; a small electrode hole and a big concave opening form a bottle-shaped structure; the electrode is drifted and deposited into the concave opening so as to form the electrode and realize the concave opening being accurately filled with the electrode; the electrode eccentricity caused by the difference in diameter of the ceramic substrate in a batch sputtering process can be avoided; the thickness of the ceramic substrate at an edge of the concave opening is greater than the thickness of the interior; the reducing of the risk in edge arc crossing is benefited; the edge effect is weakened; the flowing property is greatly promoted; the preparation process of the piezoresistor comprises the following steps: manufacturing the ceramic substrate, performing electric polarization, connecting the leading-out end, coating the insulating layer, printing and testing.

The invention belongs to the technical field of removing colloidal impurities in raw water, and discloses a device for removing colloidal impurities by electrostatic field force coupled with hydraulic action of multi-stage partitions. The device includes a settling chamber and an electric field generating device. The settling chamber is equipped with a multi-stage diversion partition and a sewage device. The multi-stage diversion partition is an upper partition and a lower partition arranged in a staggered manner, and divides the settlement chamber into several Processing units connected to each other; water inlets and water outlets are respectively provided on both sides of the top of the settling chamber; the sewage discharge device is provided at the bottom of the processing unit, and the electric field generator is provided with an anode plate and a cathode plate, and the anode plate and the cathode plate are parallel to each other Set on the bottom and top of the settling chamber, the anode plate and the cathode plate are connected through an external power supply. The device utilizes the characteristics of negative charges on the surface of colloidal particles, cleverly sets up multi-stage partitions to guide flow, and forms more favorable hydraulic conditions, so that colloidal particles can be in more favorable conditions for settlement, improve the settling efficiency of colloidal impurities, reduce consumption, and operate The process realizes automatic mud discharge.