40results about How to "Strong electric field" patented technology

The invention relates to a semiconductor device and a fabrication method thereof. A semiconductor device according to an aspect of the invention comprising: a semiconductor layer on a substrate; an isolation layer on the semiconductor layer; a source and a drain which are in contact with the semiconductor layer, each of the source and the drain comprises multiple fingers, and the multiple fingers of the source intersect the multiple fingers of the drain; and a gate on the isolation layer, the gate is located between the source and the drain and comprises a closed ring structure which encircles the multiple fingers of the source and the drain.

The invention discloses an MSM (Metal-Semiconductor-Metal) photodetector with an improved structure and a preparation method thereof. The detector comprises an active layer, a buffering layer and an insulating substrate arranged from upside to downside in sequence, wherein an electrode is also arranged on the active layer; and the electrode is at least locally buried in the active layer; the preparation method comprises the following steps of: etching an active layer surface mask overlapped on the insulating substrate to form a buried electrode channel and filling a conductive material in the buried electrode channel to form an electrode with a set form. According to the invention, the original surface electrode structure is replaced by the electrode structure buried in the semiconductor material so that the buried electrode can form an electric field in the horizontal direction in the interior of the material so as to obtain an electric field intensity stronger than that of a surface electrode structure; and the electron moves along an approximate straight track under the stronger field intensity effect so that the photon-generated carrier drift is accelerated, the response time of the device is effectively reduced, the responsiveness of the device is improved and the preparation process is simple and controllable.

An IPS (in-plane switching) liquid crystal display has a color filter substrate (3), a TFT (thin film transistor) substrate (8), and a liquid crystal layer (7) interposed therebetween. The TFT substrate includes a TFT plate (5), a protrusion layer (6), and an electrode matrix. The electrode matrix includes a plurality of transversely disposed gate lines (22), a plurality of longitudinally disposed data lines (21), switching elements, a plurality of common electrodes (27), and a plurality of pixel electrodes (28). The protrusion layer has a plurality of protrusion portions (61). The common and pixel electrodes are formed on the protrusion portions in one-to-one correspondence to provide an array of protrusive electrodes that generate a strong and highly uniform parallel electric field. This provides better picture quality, and can lower power consumption and / or yield a higher aperture ratio.

The invention relates to a clean-type hot-treatment system for collecting and exhausting oil fume, which is characterized by comprising an oil fume inlet pipe (1), a temperature cooler (2) with heat exchange, an oil fume purifier (3), an exhaust fan (4) and a controller (5); the air outlet of the oil fume inlet pipe (1) is connected with the air inlet of the temperature cooler (2) with heat exchange; the air outlet of the temperature cooler (2) with heat exchange is connected with the air inlet of the oil fume purifier (3), and the air outlet of the oil fume purifier (3) is connected with the air inlet of the exhaust fan (4); the signal output end of the controller (5) is connected with the control signal input ends of both the oil fume purifier(3) and the exhaust fan (4); the signal input end of the controller (5) is connected with the signal output end of a temperature detector which is connected in the oil fume purifier (3). The heat of the oil fume is utilized by the invention, which is beneficial to save energy. The system of the invention has the advantages of wide application range, high working efficiency, high efficiency of dust collection and saving energy, which is especially applicable to the collection of oil fume particles that are smaller in particle diameter and lighter in weight.

The invention relates to a piezoresistor and a manufacturing process thereof. The piezoresistor is composed of a ceramic substrate, a leading-out end, an electrode layer and an insulating layer, wherein a concave area, namely, an electrode positioning area, is prefabricated on the ceramic substrate; the leading-out end is arranged on an electrode; the insulating layer is used for locally or wholly packaging the ceramic substrate, the electrode layer and the leading-out end; in the manner of sputtering or spraying electrode, an electrode hole of a mask plate is positioned and coated on a concave opening; a small electrode hole and a big concave opening form a bottle-shaped structure; the electrode is drifted and deposited into the concave opening so as to form the electrode and realize the concave opening being accurately filled with the electrode; the electrode eccentricity caused by the difference in diameter of the ceramic substrate in a batch sputtering process can be avoided; the thickness of the ceramic substrate at an edge of the concave opening is greater than the thickness of the interior; the reducing of the risk in edge arc crossing is benefited; the edge effect is weakened; the flowing property is greatly promoted; the preparation process of the piezoresistor comprises the following steps: manufacturing the ceramic substrate, performing electric polarization, connecting the leading-out end, coating the insulating layer, printing and testing.

The invention discloses a blue-phase LCD (Liquid Crystal Display) panel which comprises an array substrate, a color film substrate and a blue-phase liquid crystal molecule, wherein the array substrate and the color film substrate are arranged opposite to each other; the blue-phase liquid crystal molecule is arranged between the array substrate and the color film substrate; the blue-phase LCD panel further comprises multiple first common electrodes with strip-type structures, multiple pixel electrode with strip-type structures and second common electrodes with strip-type structures; the multiple first common electrodes and the multiple pixel electrodes are alternately arranged on the array substrate; a spacing is reserved between the first common electrode and the pixel electrode which are adjacent to each other; the second common electrodes are arranged on the color film substrate; each second common electrode is arranged opposite to one first common electrode; and an electric field between the array substrate and the color film substrate is formed by virtue of the coaction of the pixel electrodes, the first common electrodes and the second common electrodes, so that the strength of the electric field between the array substrate and the color film substrate has stronger uniformity. According to the blue-phase LCD panel provided by the invention, smaller voltages are only needed to be provided for the pixel electrodes, the first common electrodes and the second common electrodes.

There is provided a liquid crystal display device comprising: a first substrate (20); a second substrate (50); a first electrode (140) formed on a first surface of the first substrate (20), the first surface facing the second substrate (50), the first electrode (140) including a plurality of convex and concave portions (141); a first oriented film (21) formed on the first surface of the first substrate (20); a second electrode (160) formed on a second surface of a second substrate (50), the second surface facing the first substrate (20); and a liquid crystal layer (70) provided between the first substrate (20) and the second substrate (50), wherein at least one of the convex portions (143,144) includes a plurality of stepped portions. There is also provided a method of manufacturing a liquid crystal display device.

The invention discloses a formaldehyde gas sensor and a making method thereof and a formaldehyde monitoring and treatment device with the formaldehyde gas sensor. The formaldehyde gas sensor is an electrochemical two-electrode system, a Pd-Ni / SiNWs formaldehyde catalytic electrode is used as a working electrode, a Ni / SiNWs electrode is used as a counter electrode, and the formaldehyde gas sensor is made by electrolyte encapsulation. Each SiNWs of the Pd-Ni / SiNWs electrode in the designed formaldehyde gas sensor can be regarded as a micro electrode with a micro / nano-scale curvature radius tip,so that catalytic reaction of formaldehyde gas molecules on the surface of the Pd-Ni / SiNWs electrode is promoted. The clearances among numerous SiNWs also have micro or nano scale, so that the effective diffusion layer soaked into a solution is smaller, and meanwhile, the double-electrode layer of the solution / electrode interface has stronger electric field effect. The formaldehyde monitoring and treatment device can be used for monitoring the formaldehyde concentration in the indoor air and treating the formaldehyde in real time, and has the advantages of low cost, simplicity in operation, easiness in implementation and the like.

The invention relates to a semiconductor device and a fabrication method thereof. A semiconductor device according to an aspect of the invention comprising: a semiconductor layer on a substrate; an isolation layer on the semiconductor layer; a source and a drain which are in contact with the semiconductor layer, each of the source and the drain comprises multiple fingers, and the multiple fingers of the source intersect the multiple fingers of the drain; and a gate on the isolation layer, the gate is located between the source and the drain and comprises a closed ring structure which encircles the multiple fingers of the source and the drain.

The invention provides a B4-flash device and a manufacture method thereof. The B4-flash device comprises a substrate, a first silicon oxide layer, a silicon nitride layer and a second silicon oxide layer, wherein the first silicon oxide layer, the silicon nitride layer and the second silicon oxide layer are sequentially installed on the substrate, the first silicon oxide layer comprises a first section, a second section and a third section which are sequentially distributed along a channel direction, and the thickness ratio of the first section, the second section and the third section is 1.5-2.5:0.8-1.2:1.5-2.5. An embodiment of the B4-flash device remits degeneration of silicon oxide and influences of electronic local area injection compiling and hole uniformity injection wiping through a heterogeneous silicon oxide structure so as to increase reliability of the device.

An electron gun for an electron microscope or similar device includes a field emitter cathode having a field emitter protrusion extending from the output surface of a monocrystalline silicon substrate, and electrodes configured to enhance the emission of electrons from a tip portion of the field emitter protrusion to generate a primary electron beam. A thin, contiguous SiC layer is disposed directly on at least the tip portion of the field emitter protrusion using a process that minimizes oxidation and defects in the SiC layer. Optional gate layers may be placed at, slightly lower than or slightly higher than the height of the field emitter tip portion to achieve high emission current and fast and accurate control of the primary emission beam. The field emitter can be p-type doped and configured to operate in a reverse bias mode, or the field emitter can be n-type doped.

The embodiment of the invention provides an electrode plate, an electrolysis device and clothes treatment equipment, a plurality of through holes penetrating through the electrode plate in the thickness direction of the electrode plate are formed in the electrode plate, and the density of the through holes in the electrode plate is 1-10 / cm < 2 >. According to the electrode plate disclosed by the embodiment of the invention, on one hand, the charge density of the junction surface of the inner wall of the through hole and the surface of the electrode plate is relatively high, and the electric field intensity nearby the junction surface is relatively high, so that the electrolysis efficiency can be greatly improved, more active substances such as hydroxyl radicals and active chlorine can be generated, and meanwhile, more microbubbles can also be generated; the sterilization, color crossing prevention and washing effects can be improved; on the other hand, water flow can flow from one side of the electrode plate to the other side of the electrode plate through the through holes, the water flow can take away microbubbles on the surface of the electrode plate and the inner wall surfaces of the through holes in time, and the microbubbles are prevented from gathering to form large bubbles.

The invention provides a waveguide direct-feed microwave plasma torch device, which is composed of a waveguide part, a tuning and auxiliary part, and a coaxial torch part. The waveguide part includes a gradient waveguide and a narrow-side compression waveguide; Tube, middle tube, inner tube, adjusting stud and coaxial centering washer; tuning and auxiliary parts include waveguide short-circuit sliding end, torch reflection tuning end and torch upper adjustment end, wherein the waveguide short-circuit sliding end is composed of waveguide short-circuit board Composed of sliding rods, the torch reflection tuning end includes adjustment studs and reflection plates. In the invention, microwave energy is directly fed into the metal coaxial torch through the tapered waveguide and the narrow-side waveguide, and the formed plasma has a central channel, which facilitates the introduction of samples and enhances the tolerance to samples. The device eliminates coaxial cables, coupling rings, etc., improves coupling efficiency, and expands the power of the torch tube. It can be used as an ionization source for atomizers and atomic mass spectrometers, or for the decomposition and treatment of harmful compounds and garbage.

The invention relates to a piezoresistor and a manufacturing process thereof. The piezoresistor is composed of a ceramic substrate, a leading-out end, an electrode layer and an insulating layer, wherein a concave area, namely, an electrode positioning area, is prefabricated on the ceramic substrate; the leading-out end is arranged on an electrode; the insulating layer is used for locally or wholly packaging the ceramic substrate, the electrode layer and the leading-out end; in the manner of sputtering or spraying electrode, an electrode hole of a mask plate is positioned and coated on a concave opening; a small electrode hole and a big concave opening form a bottle-shaped structure; the electrode is drifted and deposited into the concave opening so as to form the electrode and realize the concave opening being accurately filled with the electrode; the electrode eccentricity caused by the difference in diameter of the ceramic substrate in a batch sputtering process can be avoided; the thickness of the ceramic substrate at an edge of the concave opening is greater than the thickness of the interior; the reducing of the risk in edge arc crossing is benefited; the edge effect is weakened; the flowing property is greatly promoted; the preparation process of the piezoresistor comprises the following steps: manufacturing the ceramic substrate, performing electric polarization, connecting the leading-out end, coating the insulating layer, printing and testing.

The invention discloses an organic solid-state laser based on a metal nano core-shell structure-metal thin film plasma composite structure, comprising a substrate, a metal thin film layer, a core-shell structure layer and a gain medium layer sequentially stacked; wherein, the metal thin film layer It is a metal thin film capable of producing non-localized surface plasmon effect SPP; the shell layer material in the core-shell structure layer is an isolation dielectric material, and the central core material is the first metal nanoparticle capable of realizing the localized surface plasmon effect LSPR. The present invention cleverly uses the shell of the core-shell structure as the isolation layer, and by changing the thickness of the shell, regulates the distance between the LSPR and the SPP, realizes the coupling between the two and generates a strong local electric field, the structure is simpler, and the preparation method Easier.

The invention belongs to the technical field of removing colloidal impurities in raw water, and discloses a device for removing colloidal impurities by electrostatic field force coupled with hydraulic action of multi-stage partitions. The device includes a settling chamber and an electric field generating device. The settling chamber is equipped with a multi-stage diversion partition and a sewage device. The multi-stage diversion partition is an upper partition and a lower partition arranged in a staggered manner, and divides the settlement chamber into several Processing units connected to each other; water inlets and water outlets are respectively provided on both sides of the top of the settling chamber; the sewage discharge device is provided at the bottom of the processing unit, and the electric field generator is provided with an anode plate and a cathode plate, and the anode plate and the cathode plate are parallel to each other Set on the bottom and top of the settling chamber, the anode plate and the cathode plate are connected through an external power supply. The device utilizes the characteristics of negative charges on the surface of colloidal particles, cleverly sets up multi-stage partitions to guide flow, and forms more favorable hydraulic conditions, so that colloidal particles can be in more favorable conditions for settlement, improve the settling efficiency of colloidal impurities, reduce consumption, and operate The process realizes automatic mud discharge.

The invention relates to a liquid crystal display device and a driving method thereof. The liquid crystal display device comprises a first base plate, a second base plate and liquid crystal molecules positioned between the first base plate and the second base plate. A first common electrode is arranged on the first base plate. A pixel electrode and a second common electrode are arranged on the surface of the second base plate over the first common electrode; the second common electrode surrounds the pixel electrode; a slit is formed between the second common electrode and the pixel electrode;and when the second common electrode obtains a driving signal, an electric field for driving the liquid crystal molecules positioned in the slit to pre-tilt is formed between the second common electrode and the pixel electrode. As the slit, the second common electrode and the pixel electrode are all formed through exposure development, the electric field required for the pre-tilt of the liquid crystal molecules is obtained under the situation that no process is added; and compared with the conventional MVA (Machinery Vibration Analysis) method and the conventional PVA (Patterned Vertical Alignment) method, the production cost and the process complexity are reduced.