Light emitting diode with stepped quantum well structure and preparation method thereof

A technology of light-emitting diodes and quantum wells, which is applied to electrical components, circuits, semiconductor devices, etc., can solve the problems of low radiation recombination efficiency, low overlap rate of electron and hole wave functions, and high composition, so as to improve radiation recombination efficiency. and luminous efficiency, increase the overlap ratio, and improve the effect of band bending

Pending Publication Date: 2020-07-31
HAINAN NORMAL UNIV
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[0005] In view of this, the present invention provides a light-emitting diode with a stepped quantum well structure and a preparation method thereof. By growing a stepped quantum well active region, the AlGaN-based deep-ultraviolet LED has a relatively h

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  • Light emitting diode with stepped quantum well structure and preparation method thereof
  • Light emitting diode with stepped quantum well structure and preparation method thereof

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[0026] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0027] Such as figure 1 As shown, the embodiment of the present invention discloses a light-emitting diode with a stepped quantum well structure and an emission wavelength of 280nm, including: an N-type electrode 1, a P-type electrode 2, a substrate 3, and sequentially stacked on the substrate 3 N-type conductive layer 4, quantum well active region 5, P-type electron blocking layer 6 and P-type conductive layer 7;

[0028] Wherein, the N-type electrode 1 is e...

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Abstract

The invention discloses a light-emitting diode with a stepped quantum well structure. The light-emitting diode comprises an N-type electrode, a P-type electrode, a substrate, and an N-type conductivelayer, a quantum well active region, a P-type electronic barrier layer and a P-type conductive layer which are sequentially stacked on the substrate, wherein the N-type electrode is electrically connected with the N-type conductive layer; the P-type electrode is electrically connected with the P-type conductive layer; the quantum well active region comprises a quantum well layer and an Al0. 6Ga0.4N quantum barrier layer which are sequentially stacked on the N-type conductive layer; and the quantum well layer is a stepped quantum well, and the thickness of the quantum well layer is 2nm. By arranging the quantum well active region, an extremely strong polarization electric field cannot be caused, so that energy band bending caused by a polarization effect is improved, the electron and holewave function overlapping rate is improved, and finally the radiation recombination efficiency and the light emitting efficiency of the diode are improved.

Description

technical field [0001] The invention relates to the technical field of diode structures, in particular to a light-emitting diode with a stepped quantum well structure. Background technique [0002] Since the beginning of the 21st century, the field of AlGaN-based deep ultraviolet LEDs has developed rapidly, and deep ultraviolet LEDs have shown their very important technical application value in many aspects. However, the composition of Al in AlGaN-based deep-ultraviolet LEDs is relatively high, which has a very strong polarization electric field, and the bending deformation of the energy band leads to a decrease in the overlap rate of electron and hole wave functions, low radiation recombination efficiency, and low luminous efficiency. Increasing the overlap ratio of electron and hole wave functions solves the problem of low luminous efficiency. [0003] However, on the one hand, in order to obtain high radiation recombination efficiency, the composition of Al needs to be r...

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Application Information

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IPC IPC(8): H01L33/06H01L33/32H01L33/00
CPCH01L33/0066H01L33/0075H01L33/06H01L33/32
Inventor 赵志斌曲轶谢琼涛乔忠良徐东昕陈劲松刘国军
Owner HAINAN NORMAL UNIV
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