290results about How to "Guaranteed withstand voltage" patented technology

In a semiconductor device, an IGBT cell includes a trench passing through a base layer of a semiconductor substrate to a drift layer of the semiconductor substrate, a gate insulating film on an inner surface of the trench, a gate electrode on the gate insulating film, a first conductivity-type emitter region in a surface portion of the base layer, and a second conductivity-type first contact region in the surface portion of the base layer. The IGBT cell further includes a first conductivity-type floating layer disposed within the base layer to separate the base layer into a first portion including the emitter region and the first contact region and a second portion adjacent to the drift layer, and an interlayer insulating film disposed to cover an end of the gate electrode. A diode cell includes a second conductivity-type second contact region in the surface portion of the base layer.

At the time of, for example, a set operation (SET) for making a phase-change element in a crystalline state, a pulse of a voltage Vreset required for melting the element is applied to the phase-change element, and subsequently a pulse of a voltage Vset that is lower than Vreset and is required for crystallizing the element is applied thereto. And, the magnitude of this voltage Vset is then changed depending on the ambient temperature so that the magnitude of the voltage Vset is small as the temperature becomes high (TH). In this manner, a margin of a write operation between the set operation and a reset operation (RESET) for making the element to be in amorphous state is improved.

The invention relates to an airship airbag with shape-control frames. The airship airbag with the shape-control frames comprises an airbag casing (1) and the shape-control frames; the airtight flexible airbag casing (1) is arranged on the outer layer of the air bag, is of a laminated structure on the whole and consists of a plurality of layered structures; the inside of every layered structure is fixedly connected with the shape-control frames which comprises a plurality of pairs of vertically-arranged folding frames (2) and two pairs of shaping frames (3) respectively hinged to two ends of the folding frames (2); the airbag casing (1) of every layered structure (4) is formed by splicing the airtight film covering pieces (91) of a plurality of convex curved surface unit (9), and every convex curved surface unit (9) not only comprises one elongated airtight film covering piece (91) but also comprises a pair of end-edge fixing parts (92) on the shaping frames (3) and a pair of pulling-resistant straps (93). The airship airbag with the shape-control frames can make full use of the space inside an airship, is good in regularity of expansion and shrinkage deformation and good in repeatability and stability, and can bear relative large overpressure when being inflated and expanded fully.

The invention discloses a medium-voltage fire-resistant cable which comprises at least one conductor (1), wherein the exterior of the conductor (1) is provided with a conductor shielding layer (2), an insulating layer (3), an insulation shielding layer (4), a metal shielding layer (6), a fire-resistant layer (8), an oxygen-and-thermal barrier layer (9) and an outer sheath (10) in sequence, wherein the fire-resistant layer (8) is a ceramic silicon rubber layer; and when the number of the conductor (1) is three, a flame-retardant asbest rope packing layer (5) is arranged between the metal shielding layer (6) and the fire-resistant layer (8), and the exterior of the flame-retardant asbest rope packing layer (5) is provided with a non-alkaline glassfibre belting cabling winding layer (7). In the technical scheme of the invention, a hard ceramic armor can be formed by virtue of high-temperature burning and a protection line can be kept unblocked, the longer the burning time is, the harder the ceramic armor is, the ceramic armor has good insulating property and can fully ensure the cable to be fire-resistant and voltage-resistant; and meanwhile, the medium-voltage fire-resistant cable has low cost, is easy to install and lay and is convenient to use.

The invention relates to a pressure sensor chip, which reduces stress because of restraint of a sensor diaphragm, and ensures desired pressure resistance. In a region S1 of a peripheral edge portion 11-2c of the stopper member 11-2 that faces one face of the sensor diaphragm 11-1, a region Sla on the outer peripheral side is a region that is bonded to the one face of the sensor diaphragm 11-1; and a region S1b on the inner peripheral side is a region that is not bonded to the one face of the sensor diaphragm 11-1. When the measurement pressure Pa is the measurement pressure on the high-pressure side and the measurement pressure Pb is the measurement pressure on the low-pressure side, and if the measurement pressure Pa of the high-pressure side is applied onto one face of the sensor diaphragm, the sensor diaphragm 11-1 is able to flex without producing excessive tensile forces due to the constraints from the stopper member 11-2 at the non-bonded region S1b of the stopper member 11-2, thus reducing the stress produced at that part.

Disclosed herein is a semiconductor device including: a semiconductor substrate; a gate insulating film formed on surfaces of the semiconductor substrate including an internal surface of a hole formed in the semiconductor substrate and formed by radical oxidation or plasma oxidation; and a gate electrode formed as buried in the hole. The gate insulating film and the gate electrode form a vertical MOS.

This invention relates to a method for manufacturing low conductive resitance power VDMOS transistors, which reduces the conductive resistance just opposite to a channel of the drain end and between two VDMOS elements and adds a heavily doped N+ region in a region just under the grid of the VDMOS transistor in a first N- epitaxial layer on the N+ chip under the situation of meeting the pressure of the VDMOS transistor so as to reduce conductive resistance directly and radically.

Based on traditional DC brushless motor, the disclosed structure integrates pressure compensation device with main body of electrical motor. The pressure compensation device is composed of up capping, spring, piston, contact switch, and body case of electrical motor. Being installed inside of the body case, the piston and the case form clearance fit. Spring is installed between the piston and the up capping. Being inside the motor, the contact switch is under the piston. The structure is capable of detecting and controlling running state of electrical motor, and ensuring sealing performance of electrical motor underwater operational environment. Advantages are: almost no limited depth of underwater operation, reliable performance of underwater electrical motor, compact structure, low failure rate, and good security. The invention is applicable to underwater robot, underwater operation tools and relevant industries of aquatic product.

A spark plug is disclosed as including a metal shell 10 formed with first and second bores 10c, 10d and a stepped section 10e between the first and second bores, and a porcelain insulator 20 having a largest-diameter section 20d, which is accommodated in the first bore and a small-diameter section 20e accommodated in the second bore. The first and second bores of the metal shell have a dimensional relationship, lying in a value equal to or less than 1.8 mm, which is expressed as (D1−D2) / 2 where D1 represents an inner diameter of the first bore of the metal shell and D2 represents an inner diameter of the second bore of the metal shell.

This silicon carbide semiconductor device is provided with a vertical MOSFET including: a semiconductor substrate having a high-concentration impurity layer (1) and a drift layer (2); a base region (3); a source region (4); a trench gate structure; a source electrode (9); and a drain electrode (10). In the base region, a high-concentration base region (3a) and a low-concentration base region (3b) having a lower second conductivity-type impurity concentration than the high-concentration base region are laminated. The high-concentration base region and the low-concentration base region are in contact with the side surfaces of the trench.

The invention discloses a method for manufacturing a high-voltage electrolytic capacitor. The method comprises the following steps: forming and sintering a valve metal anode block; cleaning the formed anode block; preparing an electrolyte; performing primary film coating; electrochemically forming, and cleaning and thermally treating a medium oxide film; performing secondary film coating; removing residual impurities on the surface of medium oxide film; coating a cathode electrolyte; coating a graphite layer and a silver paste layer on a tantalum core surface coated with the electrolyte in sequence; performing spot welding, bonding, assembling, die pressing and packaging; and shaping to obtain a finished product, and testing the electric performance of the product. The method has the beneficial effects that the temperature of the electrolyte and the current density are changed, and the medium oxide film is formed on the surface of anode block via an electrochemical oxidization method under the condition of relatively constant conductivity, so that the voltage resistance of the product is ensured, and the probability of break-through of the capacitor is effectively lowered.

The invention relates to the technical field of semiconductor power devices, in particular to a junction terminal structure of a transverse high-voltage power semiconductor device. According to the junction terminal structure, by reducing the total area of a P-type substrate and an N-type shift region, at the position of a curvature junction terminal, of the device, the device is prevented from being used up in advance in the region of the P-type substrate, and the withstand voltage of the device at the position of the curvature junction terminal is guaranteed. The junction terminal structure of the transverse high-voltage power semiconductor device has the advantages that the influences on the withstand voltage of the whole device from the curvature junction terminal can be obviously reduced, the electric field, in a transitional region, of the device cannot be too high, the withstand voltage of the device is optimized by changing the area of the shift region or the area of the P-type substrate, and the withstand voltage of the device is guaranteed accordingly. The junction terminal structure of the transverse high-voltage power semiconductor device is particularly suitable for junction structures of transverse high-voltage semiconductor devices.

The invention discloses a high-resilience wear-resistant EVA composite foam material, a preparation method and a composition for preparing the material. The composition comprises the ingredients in parts by mass: 30-50 parts of ethylene-vinyl acetate copolymer, 10-20 parts of polyolefin thermoplastic elastomer, 10-20 parts of polyolefin block copolymer, 4-10 parts of thermoplastic polyurethane, 5-10 parts of thermoplastic polyester elastomer, 5-10 parts of anti-wear agent, 0.5-1 part of zinc oxide, 0.5-1.5 parts of zinc stearate, 0.5-1.2 parts of cross-linker, 0.1-0.3 part of crosslinking assistant and 1.5-3.5 parts of foamer. The preparation method comprises the steps of feed weighing, reblending, granulating and foaming. The obtained high-resilience wear-resistant EVA composite foam material is high in resilience and excellent in wear resistance and is applied to production of shoe soles of sports shoes.

The invention provides a drum type micro-filtering machine which comprises a housing, a filtering barrel with a filtering net, a backwashing device, a control system and a motor, wherein the filtering barrel is located in the housing, a rotary bracket of the filtering barrel is fixedly connected with the housing, the backwashing device is arranged between the filtering barrel and the housing; the control system comprises a water level sensor arranged in the filtering barrel and a control device assembly arranged outside the housing. By adopting an automatic water level detection function, by virtue of a water level difference, the rotation of the filtering barrel and the starting of backwashing are controlled, the advantages of reducing energy consumption and labor force are achieved; the drum type micro-filtering machine is economic and applicable, simple to operate, and low in production and operation costs.

The invention discloses a packaging process for a stator of a motor. The process steps include: first, putting a metal jig into the stator wound with copper wires; then preheating the stator at a temperature of 80°C for 1 hour; Pour liquid epoxy resin colloid into the tool, press the colloid in with the center rod and squeeze it while filling the glue; stop the extrusion when the coil is completely submerged in the colloid; then put the stator after the glue filling under temperature Bake at 80°C for 4 hours, heat to solidify the glue; after the glue cools and hardens, use a hydraulic press to take out the metal jig to complete the packaging product of the motor stator. The present invention squeezes the colloid while filling the glue, which can effectively discharge the air bubbles in the colloid, making the surface of the glue filling smooth and ensuring the normal operation of the motor; and the process is simple, which fully ensures that the inside of the stator can be completely filled with glue. Furthermore, the insulation and voltage resistance of the motor stator are guaranteed, and it is suitable for mass production.

The invention relates to a kind of road marking resin, which particularly relates to the road marking resin lipid-modified by the high-quality rosin to replace petroleum resin, acrylic or chlorinated rubber for solving the pollution problem. The material has excellent mobility of construction as well as anti-shed, light resistance, wear resistance, oxidation resistance, water-resistance, pressure resistance, filthy resistance, weather resistance and chemical resistance.

The invention discloses an ultrathin three-dimensional water-cooling device and a machining method thereof, and belongs to the field of water-cooling plate machining. The ultrathin three-dimensional water-cooling device provided by the invention is machined into a three-dimensional shape from a water-cooling plate, the thickness of the water-cooling plate is 0.5mm-3.5mm, and the width of a part vertical to the plate surface of the water-cooling plate, of a water flow flowing channel, is 50%-70% of the thickness of the water-cooling plate. The water-cooling device can be machined into an integrated spatial three-dimensional structure with any size as needed; and moreover, the machined three-dimensional shape is unlimited, a leakage point at a turning point / bending part is avoided, and non-uniform local heat dissipation due to the heat leakage point is avoided. The water-cooling device is applicable to heat dissipation for a component.

The invention belongs to the field of building materials, and particularly relates to an environmental-friendly brick and a production method thereof. The brick comprises 15-25 parts by weight of coal gangue, 30-40 parts by weight of building rubbish, 5-10 parts by weight of coal cinder, 15-25 parts by weight of granite disintegrated slag, 5-10 parts by weight of water and 10-20 parts by weight of straw. The coal gangue, the building rubbish, the straw, and the like are adopted to produce the brick, thus guaranteeing the strength and the compression resistance of the brick, reducing the weight of the brick and enhancing the sound insulation effect of the brick.

The invention provides a pressure sensor chip reducing stress produced by limitation caused by sensor diaphragm and prevents excessive dislocation of the sensor diaphragm when an excessively large pressure is applied to the sensor diaphragm. A part of face PL that is in a retaining component 11-2 and in parallel with a stress face of the sensor diaphragm (11-1) is communicated with a non-bonding area SA on the periphery of a pressure guiding hole 11-2b. For example, by combining the area of the face of the non-bonding area SA with the non-bonding area SA removed, one part of the retaining component 11-21 and the other part of the retaining component 11-22 that are divided into two parts are combined into a retaining component (11-2). Thus, a face that is parallel with a stress face of the sensor diaphragm (11-1) is divided into the non-bonding area SA communicated to the periphery of the pressure guiding hole (11-2b) and a bonding area (SB) not communicated with the periphery of the pressure guiding hole (11-2b).

The invention discloses a manufacturing method of a high voltage isolating N type laterally diffused metal oxide semiconductor (LDMOS) component. Firstly, relatively thick N type ions are respectively injected into the low portions of two different regions of the component, wherein the two different regions comprise a P type trap region and a leak end region. Two relatively deep isolated very deep N type traps are formed along with the strong deep push trap technology. Secondly, with the lighter injection condition, two relatively shallow communicated deep N type traps are formed along with the weak deep push trap condition, and then shallow junction depth is formed on a component leak end drift region. The manufacturing method of the high voltage isolating N type LDMOS component manufactures the high voltage isolating N type LDMOS component and has the advantages of being capable of guaranteeing withstand voltage of the component and optimization on resistance under a small lateral dimension and low in cost.

A high-voltage semiconductor device includes: a semiconductor region (2); a doped contact region (6); an isolating region (4); a field insulating film (16); a metal electrode (25) which is electrically connected with the N doped contact region (6); and floating plate electrodes (18a,19a). A section (25-1,25-2) of the metal electrode (25) is extended onto an interlayer dielectric film (34) and located over the respective plate electrodes (18a,19a). The extended section (25-1,25-2) is capacitively coupled to the plate electrodes (18a,19a), respectively. A CMOS circuit(7 to 11, etc), a resistor (13, etc), a capacitor (12, etc) are formed in a portion of the semiconductor region (2) which is surrounded with the N doped contact region (6).

The invention discloses a double-coating magnetic liquid sealing device. The sealing device comprises a shell, a rotating shaft, a first pole shoe, a second pole shoe and a first permanent magnet, wherein a shaft chamber is formed in the shell; the rotating shaft is rotationally arranged in the shaft chamber; a first non-magnetic coating is arranged on the outer circumferential surface of the rotating shaft; the first pole shoe and the second pole shoe are arranged on the rotating shaft in a sleeving mode and are arranged at intervals in the axial direction of the rotating shaft; second non-magnetic coatings are arranged on the inner circumferential surface of the first pole shoe and the inner circumferential surface of the second pole shoe; the first permanent magnet is arranged on the rotating shaft in a sleeving mode; the first permanent magnet is located between the first pole shoe and the second pole shoe; a first liquid cavity is formed among the first pole shoe, the second poleshoe, the first permanent magnet and the first non-magnetic coating; and the first liquid cavity is used for storing magnetic liquid. According to the double-coating magnetic liquid sealing device, the machining difficulty and cost are reduced, the magnetic liquid can be supplemented in time, the pressure resistance of the magnetic liquid sealing is maintained, the magnetic liquid further has a lubricating effect, and the torsion moment of the magnetic liquid sealing is reduced.

The invention discloses a compound soft magnetic material and a preparation method thereof. The compound soft magnetic material comprises following components by weight percent: 48.25-76.91% of FeSiCr, 15-30.5% of Fe2O3, 3-9% of NiO, 3.8-7.3% of ZnO, 1.0-2.5% of CuO, 0.01-0.65% of Bi2O3, 0.03-0.55% of V2O5, 0.15-0.75% of SiO2, and 0.1-0.5% of Mn3O4. The compound soft magnetic material has high initial permeability and high saturation magnetic flux density.

At the time of, for example, a set operation (SET) for making a phase-change element in a crystalline state, a pulse of a voltage Vreset required for melting the element is applied to the phase-change element, and subsequently a pulse of a voltage Vset that is lower than Vreset and is required for crystallizing the element is applied thereto. And, the magnitude of this voltage Vset is then changed depending on the ambient temperature so that the magnitude of the voltage Vset is small as the temperature becomes high (TH). In this manner, a margin of a write operation between the set operation and a reset operation (RESET) for making the element to be in amorphous state is improved.

The invention discloses an ultra-thin water cooling plate and a processing method thereof and belongs to the field of water cooling plate processing. The thickness of the water cooling plate is 0.5-3.5 mm. According to the water cooling plate, the thickness of the water cooling plate is greatly reduced and is up to 0.5-3.5 mm, the minimum thickness is up to 0.5 mm, the thickness of the plate is reduced while the heat exchange effect and the pressure resistant capacity of the plate are also guaranteed, the bottleneck of the existing technology is broken, the blank of the existing technology is filled, and the unexpected technical effects are obtained. The water cooling plate is suitable for processing a nonplanar heat radiation structure.

The invention discloses an improved oilfield downhole electromagnetic flowmeter which comprises a sleeve, wherein the hollow structure of the sleeve and a lower-end sealing connector are combined to form an excitation coil placement bin; an excitation coil framework is arranged in the excitation coil placement bin; an encapsulation coating is arranged on the outer side of the sleeve; two inward concave electrode slice storage grooves are formed in positions where the encapsulation coating corresponds to the excitation coil framework; electrode slices are fixed in the storage grooves through the encapsulation coating; an excitation coil lead perforation for communicating a circuit tube and the excitation coil placement bin is arranged at the solid end of the sleeve; an excitation coil is mounted on the excitation coil framework; a lead-out wire of the excitation coil penetrates through the excitation coil lead perforation and is connected with a circuit board in the circuit tube. The electrode slices are positioned on the outer surface of the sleeve, so that the pressure-resistant capability of the sleeve is greatly improved; a high-pressure sealing plug is arranged in the sleeve, so that the impact of external mechanical impact force is avoided. Therefore, the overall pressure-resistant capability and reliability of the improved oilfield downhole electromagnetic flowmeter are remarkably improved.

The invention provides a split type optic fiber strain sensor assembly. Under the premise that fiber bragg grating prestressed encapsulation is not influenced, an encapsulation mode and an assembling mode are decoupled, and the problem that a sensor cannot be used again after being mounted once is solved through separation of a metal encapsulation protection piece and an assembling base. The split type optic fiber strain sensor assembly comprises a sensing element, the encapsulation protection piece and the assembling base. The sensing element is a fiber bragg grating, and the encapsulation protection piece is a metal tube. After the fiber bragg grating penetrates through the mental tube, the clearance between the fiber bragg grating and the metal tube is welded and fastened in an ultrasonic welding mode. Optical fibers are led out from the two ends of the metal tube. The two ends of the metal tube are banded tightly through flange plates. The metal tube with the encapsulated sensing element is supported by the assembling base, and the flange plates at the two ends of the metal tube are connected with the assembling base.

The invention relates to a high-voltage pulse capacitor. The high-voltage pulse capacitor comprises a shell, a capacitor core group and an electrode, wherein a lower epoxy resin layer, an insulating layer which completely covers the capacitor core group, a fixing sleeve and an upper epoxy resin layer are successively arranged in the shell from bottom to top; the bottom of the capacitor core group is fixedly connected with the bottom of the shell through the lower epoxy resin layer; a mounting hole which is matched with the electrode is formed in the fixing sleeve; the top of the upper epoxy resin layer is parallel and level to the top of the shell; and the upper epoxy resin layer is fixedly connected with the shell. The high-voltage pulse capacitor is simple in manufacturing process, on the premise of guaranteeing voltage resistance and penetration resistance of the capacitor, airtightness of sealing of the shell is remarkably improved, sealing cost is low, and safety is high. The high-voltage pulse capacitor is good in heat dissipation property, heat generated by the capacitor core group can be dissipated outwards in time through the insulating layer, airtightness of sealing is prevented from being affected by heat, the implementing effect is good, and application value is high.

The invention belongs to the technical field of power semiconductors, and in particular relates to a grooved gate MOS having a buried layer structure. Compared with conventional grooved gate MOSes, the grooved gate MOS herein introduces a P type body region having different depths in the x direction and y direction of a sketch map, such that the grooved gate is still provided with a P type region therebelow, which reduces the ratio between a grid leak capacitor (Cgd) and a grid source capacitor (Cgs) of the structure. An inverted-trapezoid P type body region in the x direction also improves peak electric field of a grooved gate corner region. A transverse electric field is introduced through the adding of a proper inverted buried layer area to an epitaxial layer area, which effectively increases pressure resistance capability of the grooved gate MOS. The added buried layer structure enables the N-epitaxial layer area below the grooved gate to be able to increase doped concentration and reduce on resistance.

In a semiconductor device, an IGBT cell includes a trench passing through a base layer of a semiconductor substrate to a drift layer of the semiconductor substrate, a gate insulating film on an inner surface of the trench, a gate electrode on the gate insulating film, a first conductivity-type emitter region in a surface portion of the base layer, and a second conductivity-type first contact region in the surface portion of the base layer. The IGBT cell further includes a first conductivity-type floating layer disposed within the base layer to separate the base layer into a first portion including the emitter region and the first contact region and a second portion adjacent to the drift layer, and an interlayer insulating film disposed to cover an end of the gate electrode. A diode cell includes a second conductivity-type second contact region in the surface portion of the base layer.