31results about How to "Guaranteed withstand voltage" patented technology

The invention relates to the technical field of metal bearings, in particular to a reinforced liquid metal sliding bearing. The enhanced liquid metal sliding bearing comprises a rotor, a stator and liquid metal filled in an assembling gap between the rotor and the stator. The fixed positions of the rotor and the stator are provided with a spiral groove structure, a textured microstructure, an infiltration coating and a sealing coating. By adopting the enhanced liquid metal sliding bearing provided by the invention, the wettability and the wear resistance of a bearing rotating pair can be improved, and the problems of coating falling, wear, poor lubrication and the like of the enhanced liquid metal sliding bearing in a high-vacuum, high-temperature, high-pressure, high-speed and high-load use environment are effectively solved. High-pressure sealing is formed on the gaps between the stator and the rotor and between the limiting rings of the stator and the rotor, the liquid metal is kept in the bearing, the assembled bearing does not need a vacuum environment in the transfer process, meanwhile, external gas is prevented from entering the bearing structure, and the possibility that the liquid metal leaks or gets stuck is reduced.

The invention relates to a semiconductor device and a preparation method thereof. The semiconductor device comprises a semiconductor material layer; the first groove is located in the semiconductor material layer, the side wall and the bottom wall of the first groove are connected through an arc angle, and the included angle between the plane where the side wall is located and the plane where the bottom wall is located is an obtuse angle; the drain region is located in the semiconductor material layer on the periphery of the first groove, and the depth of the drain region is smaller than that of the first groove; the well region is located in the semiconductor material layer below the bottom wall; the field oxide layer extends on the part, between the well region and the drain region, of the bottom wall and the side wall; the gate dielectric layer is connected with the field oxide layer and covers part of the well region; the field plate is located on the field oxide layer; the grid electrode is located on the grid electrode dielectric layer; the source region is positioned on the surface layer of the well region; a current conduction path of the semiconductor device comprises a first current conduction path which is located in the semiconductor material layer and extends close to the bottom wall and a second current conduction path which extends close to the side wall. Therefore, the on-resistance of the device is reduced, and the voltage-resistant performance of the device is ensured at the same time.

The invention discloses a power semiconductor device and a preparation method, the power semiconductor device comprises a field plate structure layer, an epitaxial layer and a substrate layer, the epitaxial layer is internally provided with a main junction region and a plurality of field limiting ring structure regions which are arranged at intervals and surround the main junction region, and the main junction region and the field limiting ring structure regions extend into the interior from a first surface of the epitaxial layer. The field plate structure layer is arranged on the first surface of the epitaxial layer and is connected with at least one field limiting ring structure region, and in the direction away from the main junction region, the sectional areas of the multiple field limiting ring structure regions are decreased progressively, and the spacing distances between the main junction region and the multiple field limiting ring structure regions are decreased progressively; the field plate structure layer is a metal layer, the epitaxial layer and the substrate layer are both semiconductor structures of a first conductive type, and the main junction region and the field limiting ring structure region are both semiconductor structures of a second conductive type. According to the power semiconductor device and the preparation method, low sensitivity to movable charges can be kept, high breakdown voltage is achieved, the voltage resistance of the device is guaranteed, and the reliability of the device is high.

The invention belongs to the technical field of semiconductors, and particularly relates to an MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) structure and a method for manufacturing the MOSFET structure. The structure comprises a substrate; the drift region is positioned on the upper surface of the substrate and consists of a single-layer or multi-layer epitaxial layer; the drift region is provided with a plurality of first groove structures located in the active region and a plurality of second groove structures located in the terminal region, and the side walls of the second groove structures are zigzag; the first bottom oxidation layer is located in the first groove structure, and the second bottom oxidation layer is located in the second groove structure; the first bottom oxide layer and the second bottom oxide layer are of groove structures, and the thickness of the first bottom oxide layer is smaller than that of the second bottom oxide layer. The zigzag side wall is formed when the second groove structure is etched, so that the thickness of the second bottom oxide layer can be increased while the first bottom oxide layer is not increased, the withstand voltage of the terminal structure is ensured, the very small primitive cell unit size and the lower on-resistance are obtained, and the source-drain breakdown voltage is improved.

The invention discloses a power device and a preparation method thereof. The power device comprises a substrate; the epitaxial layer of the first conduction type is arranged on the substrate, and an active region and a terminal region arranged on the periphery of the active region are arranged on the epitaxial layer; the first injection region of the second conduction type comprises a main junction, and the main junction is arranged at the position, close to the active region, of the terminal region; the first anti-breakdown structure comprises a voltage-dividing deep groove and a field oxide layer; the voltage-dividing deep groove is arranged in a terminal area outside the main junction, and the depth of the voltage-dividing deep groove is greater than the junction depth of the main junction; and the field oxide layer is filled in the partial pressure deep groove and extends out of the partial pressure protection region to cover the surface of the partial pressure deep groove. The power device has the advantages that the anti-breakdown effect is guaranteed, the preparation process is simple, and the cost is relatively low.

The invention discloses a relay, which comprises a shell, a magnetic circuit part, a contact part and a pushing part, and is characterized in that the magnetic circuit part is mounted on the shell and comprises at least two magnetic circuit units; the contact part is arranged on the shell and comprises a movable spring group, a static contact group and a load terminal; the movable spring groups and the static contact groups are arranged corresponding to the magnetic circuit unit, and each movable spring group is provided with a movable contact group corresponding to the static contact group; each movable spring group and the corresponding static contact group jointly form a switch; the movable spring group and the static contact group in each switch are respectively connected with different load terminals, and at least one load terminal is shared by at least two switches and forms a common terminal; and the pushing part comprises a pushing piece accommodated in the shell, the pushing piece and the magnetic circuit unit are correspondingly arranged, and the pushing piece is driven by the corresponding magnetic circuit part to drive the corresponding movable spring group, so that the movable contact group and the corresponding static contact group are closed or opened. By adopting the technical scheme, the occupied space is smaller than that in the prior art for realizing the functions of more than two switches.

The utility model provides an LDMOS (Laterally Diffused Metal Oxide Semiconductor) device and electronic equipment. The LDMOS device comprises a substrate; the gate structure is located on the surface of the substrate; the source region and the drain region extend into the substrate from the surface of the substrate and are located on the two sides of the gate structure; the field oxide layer covers at least part of the surface of the drain region and extends to cover part of the surface, close to the drain region, of the gate structure; the at least one string of field plate structure is located on the field oxide layer and is arranged between the gate structure and the drain region, each string of field plate structure comprises a plurality of conductive contact field plate holes, and the plurality of conductive contact field plate holes are arranged in a string in a plane parallel to the surface of the substrate; and in the length extension direction of at least one string of field plate structures, a gap exists between the adjacent conductive contact field plate holes.

This invention provides a quick-connect balloon dilation catheter and a method for preparing the balloon dilation catheter. The quick-connect balloon dilation catheter includes a catheter seat, an outer tube connected to the catheter seat, and a balloon connected to the distal end of the outer tube. The outer tube has a metal tube body extending from the proximal end to the distal end, the metal tube body having a non-cutting segment at the proximal end and a cutting segment connected to the distal end of the non-cutting segment. The outer tube also has a polymer inner liner covering the inside of the cutting segment and a polymer sheath covering the outside of the cutting segment, such that the outer tube is integrally formed as a composite tube segment with a metal tube segment at the proximal end and a composite tube segment connected to the distal end of the metal tube segment, the composite tube segment having a quick-connect port penetrating both the inside and outside. This design improves the catheter's delivery and positioning accuracy.

The utility model provides a single battery, battery pack and electronic device, this single battery includes casing, electrode assembly, lid and current collection member, the casing includes side wall, and the side wall surrounds to have the opening, electrode assembly installs in the casing, the lid blocks the opening, and is welded fixed with the side wall, current collection member sets up between the lid and electrode assembly, and current collection member and the current collection department of electrode assembly electric connection, wherein, at the side of lid away from electrode assembly, the lid includes thinning area, and the side surface of thinning area away from electrode assembly recess forms first recess, and the welding mark is formed by the welding connection of lid, side wall and current collection member, and the welding mark is located in first recess. The utility model can improve the technical problem of the welding quality of prior art because of the big thickness of lid, reduces the safety and the yield of single battery.

The utility model provides a transformer framework, transformer, power module and electric equipment, the transformer framework includes the body, the body has two side plate and winding reel, one side plate is connected with one end of winding reel, the body has the magnetic core jack, the magnetic core jack passes through winding reel and two side plate in the axial direction of winding reel, the side plate is provided with the fixed wire pin, and the fixed wire pin is connected with the winding reel. The wire fixing pin is provided with a pin part and a wire fixing part, in the height direction of the body, the pin part extends out of the side plate, the height direction is perpendicular to the axial direction, the wire fixing part is located on the side, opposite to the winding reel, of the side plate, the wire fixing part is provided with a wire clamping groove, and the wire fixing part can be plastically deformed. The transformer is provided with the transformer framework, the power module is provided with the transformer, the electric equipment is provided with the power module, the transformer framework has the advantages of being convenient to produce and capable of reducing production process difficulty and cost, and the transformer framework can improve the quality and voltage resistance of the transformer.

The utility model discloses a withstand voltage test device for insulating boots, comprising a test bench, the test bench is provided with a water storage tank body, a mounting rack and a water inlet pipe I for supplying water to the water storage tank body, the water inlet pipe I is provided with a water inlet valve I, the water storage tank body is connected with a water drainage pipe I, the water drainage pipe I is provided with a water drainage valve I, and the water drainage valve I is connected with the mounting rack. The bottom of the water storage tank body is provided with a porous water absorption pad used for placing an insulating boot, a conductive part is arranged between the bottom surface of the water storage tank body and the porous water absorption pad, the conductive part is connected with a connecting wire used for grounding, the mounting rack is provided with a conductive wire I used for connecting a power supply, the conductive wire I is provided with an ampere meter, and the ampere meter is connected with a power supply. A second electric lead is detachably arranged at the bottom end of the first electric lead, a conductive metal sheet is arranged at the bottom end of the second electric lead, and the shape of the conductive metal sheet corresponds to the shape of the inner bottom face of the insulating boot. The positioning device has the advantages of being convenient to operate, stable in positioning and simple in structure.

The centrifugal casting mold comprises a first half mold and a second half mold, an inner cavity of the first half mold and an inner cavity of the second half mold are spliced to form a ball casting cavity, and a spherical inner core is arranged in the ball casting cavity; the ball valve is characterized in that the spherical inner core adopts a hollow ball structure formed by connecting an outer cylindrical surface of a straight cylinder with a spherical surface, so that under the condition of ensuring the pressure resistance of the ball, the weight can be greatly reduced, the rotating torque of the ball in the ball valve is reduced, the configuration cost of an actuator is reduced, the bearing pressure of the ball valve on a pipeline system is reduced, and the use performance of the ball is greatly improved; the method is particularly suitable for casting of large-diameter balls.

The invention relates to the technical field of aircraft tail boom retracting and releasing systems, and particularly discloses a tail boom retracting and releasing system with a centering mechanism, which comprises a tail boom strut actuating cylinder connected with an aircraft body, and a lateral spring pull rod connected with the upper part of the tail boom strut actuating cylinder, the lower part of the tail boom strut actuating cylinder is respectively connected with a tail boom retracting and releasing actuating cylinder, a cabin door pull rod mechanism and a tail boom strut uplock, the free end of the cabin door pull rod mechanism is connected with an aircraft cabin door, the free end of the tail boom retracting and releasing actuating cylinder is connected with a rotating rocker arm mechanism, and the other end of the rotating rocker arm mechanism is connected with a course spring pull rod. According to the tail boom retracting and releasing system, an aircraft hydraulic system serves as energy, the tail boom retracting and releasing system which is simple in structure, reliable, stable and high in self-adaptability and has an automatic adjusting and centering function is provided, and the technical problems that an existing tail boom retracting and releasing system is complex in structure, poor in stability, weak in interchangeability, poor in environmental adaptability and the like are solved.

The invention discloses a pressure-resistant PVC pipe, and relates to the technical field of PVC pipe bodies, the pressure-resistant PVC pipe comprises an outer pipe, a reinforcing assembly and an inner pipe assembly, the circumferential inner wall of the outer pipe is fixedly connected with the reinforcing assembly, the circumferential inner wall of the reinforcing assembly is fixedly connected with the inner pipe assembly, the reinforcing assembly is arranged outside the inner pipe assembly, and the inner pipe assembly is fixedly connected with the outer pipe. The outer pipe is arranged outside the reinforcing assembly, the inner pipe assembly comprises a straight pipe, a first injection molding layer is arranged on the circumferential outer wall of the straight pipe, arc-shaped pipes are arranged on the circumferential inner wall of the straight pipe, and the arc-shaped pipes are distributed in the straight pipe at equal intervals; the straight pipe, the first injection molding layer and the arc-shaped pipe are all integrally formed through injection molding, the pipe body can have good pressure resistance, other materials do not need to be compounded, the production efficiency of the PVC pipe body is guaranteed while the pressure resistance strength of the PVC pipe body is improved, and the use requirements of people are met.

The invention belongs to the technical field of heat management, and discloses an energy storage device direct cooling type heat management device which comprises a machine body, an upper cabin is formed in the machine body, a lower cabin is arranged at the bottom of the upper cabin, a cabinet door is arranged on one side of the machine body, a cooling fan is arranged on one side of the cabinet door, and filter screens are arranged on the front side of the upper cabin and located on the left side and the right side of the upper cabin. A condenser is arranged in the upper cabin, a communicating pipe is fixedly installed on one side of the condenser and penetrates through the upper cabin to extend into the lower cabin, a first connecting pipe is fixedly installed at one end of the communicating pipe, a first conveying pipe is fixedly installed at the bottom of the other end of the communicating pipe, and a second connecting pipe is fixedly installed at one end of the first connecting pipe. The direct cooling design is adopted, a circulating water pump, a heat exchanger and the like which are necessary for a liquid cooling system are omitted, the problems of size, energy consumption, vibration and the like of the liquid cooling system are reduced, the buried pipe type cold plate design is adopted, professional calculation is configured, and the pressure resistance and heat exchange efficiency of the battery cold plate are guaranteed.

According to the technical scheme, the pressure-resistant packaging carton is characterized by comprising a main body mechanism, the main body mechanism comprises a first paper layer, the inner wall of the first paper layer is connected with a waterproof layer in a bonding mode, the side face, away from the first paper layer, of the waterproof layer is provided with four hard reinforcing rings, and the outer wall of the first paper layer is connected with the waterproof layer in a bonding mode. The hard reinforcing ring is connected with the waterproof layer in a bonding mode, and a second paper layer is arranged on the side face, away from the waterproof layer, of the hard reinforcing ring. According to the packaging carton, the main body mechanism is arranged, so that the use strength of the carton body of the packaging carton is higher, the pressure resistance of the carton body is improved through the hard reinforcing ring, the situation that the carton body is easily sunken, bent and even damaged due to the fact that the outside applies pressure to the side walls in the using process is avoided, and meanwhile the plastic pad is arranged, so that the bottom of the first paper layer is prevented from being corroded by water.

The invention provides a fluidized bed and a coal ash tank car for a railway based on the fluidized bed, which are used for solving the problems that the volume is small when the existing railway transportation tank car is used for transporting coal ash, so that the carrying capacity each time is low; the horizontal conveying distance of the railway cement tanker cannot meet the long-distance unloading requirement, so that the residual amount after unloading is high, and the transportation economy is poor. The fluidized bed is supported by the three supporting units, the two partition plates and the two end sockets to form a large-dip-angle fluidized bed structure with multiple gas bins and multiple material bins, and the first through hole and the second through hole in the fluidized bed are supported and shaken through the fluidization cloth, so that residual powder in a tank can be fully fluidized, and the fluidization efficiency is improved. The problem of excessive residual powder in the tank during unloading is effectively solved, and the complete unloading rate of a vehicle is greatly improved.

The invention relates to an MOSFET device based on F ion gate modulation and a preparation method thereof. The device comprises a substrate layer, a first N-type GaN layer, a second N-type GaN layer, a P-type GaN layer and a third N-type GaN layer which are sequentially arranged from bottom to top. The gate groove extends into the second N-type GaN layer from the two ends of the upper surface of the third N-type GaN layer; the side, close to the third N-type GaN layer, of the gate groove is a gate region, and the side, away from the third N-type GaN layer, of the gate region is a modulation region. The gate structure extends to the gate region from the upper surface of the third N-type GaN layer; a source recess; a source electrode; a drain electrode; and the F ion implantation region is located in the modulation region and extends into the second N-type GaN layer from the bottom of the gate groove. The F ion injection region is arranged in the modulation region, electrons on the surface of the third N-type GaN layer are exhausted, the electric field concentration phenomenon of the device is relieved, the breakdown voltage of the device is improved, and the voltage resistance of the device is ensured.

The present invention discloses a circuit board for heat conduction by inlaying ceramics and a manufacturing method thereof. The circuit board comprises a first insulating substrate and a second insulating substrate which are distributed up and down. The first insulating substrate and the second insulating substrate are bonded together by an insulating adhesive layer. A vertical channel which passes through the first insulating substrate, the second insulating substrate and the insulating adhesive layer is provided in the circuit board. A ceramic body which is convenient for heat conduction is installed in the vertical channel. The lower end of the ceramic body is provided with an insulating heat-conducting layer, and the upper end is flush with the upper surface of the first insulating substrate to form a first plane. The lower surface of the insulating heat-conducting layer is flush with the lower surface of the second insulating substrate to form a second plane. A first metal layer for connecting a heating element thereto is laid on the first plane, and a second metal layer which is convenient for heat dissipation is laid on the second plane.

The present invention discloses a multi-way valve, including a driver and a first fixed part, a first rotating structure, a liquid distribution structure, a second rotating structure and a second fixed part which are stacked in sequence. The first rotating structure and the second driving structure rotate relative to the first fixed part under the drive of the driver, and the first rotating structure has a first passage connected to the liquid inlet of the first fixed part; the liquid distribution structure has a second passage and a third passage, the second passage is connected to the first passage, and the second passage and the third passage are connected to each other; the second rotating part has a fourth passage connected to the third passage; the second fixed part and the fourth passage are connected to each other. During the liquid transportation process, both the liquid inlet and the liquid outlet are fixed parts, and during the output process, it is only necessary to directly connect the various passages to each other, thereby changing the side rotation fit of the original device to an axial rotation fit, changing the liquid flow direction, and greatly reducing the possibility of liquid leakage.

The present application discloses a power diode and a method for preparing the same. The power diode includes a plurality of first epitaxial structures, wherein the first epitaxial structure includes a second epitaxial layer and a first conductive layer, wherein the second epitaxial layer is located on the inner surface of the first epitaxial trench, and the first conductive layer is located in the first epitaxial trench, wherein the second epitaxial layer has a second doping type, and the second epitaxial layer and the first conductive layer form a Schottky contact; and at least one second epitaxial structure, wherein the second epitaxial structure includes a third epitaxial layer and a second conductive layer, wherein the third epitaxial layer is located on the inner surface of the second epitaxial trench, and the second conductive layer is located in the second epitaxial trench, wherein the third epitaxial layer has a second doping type, wherein the first conductive layer and the second conductive layer have different conductive materials, the third epitaxial layer has a second doping type, and the third epitaxial layer and the second conductive layer form an ohmic contact. This is to solve the problem that the performance advantage of power devices in the related art is not obvious.

The utility model relates to a heat exchange module, a parallel flow heat exchanger comprising the heat exchange module and engineering machinery comprising the parallel flow heat exchanger. The heat exchange module comprises a heat exchange core body and two collecting pipes. The heat exchange core body comprises a plurality of heat exchange tubes which are arranged side by side; the two collecting pipes are arranged on the two end sides of the heat exchange core correspondingly and communicate with fluid of the heat exchange pipes. The circumferential contour of the inner wall of the collecting pipe is round, and an abutting boss protruding outwards is arranged on the side, opposite to the plane where the heat exchange core is located, of the outer wall of the collecting pipe and used for assembling and positioning the heat exchange module. And a connecting through hole extending from the abutting surface of the abutting boss to the interior of the collecting pipe is formed in at least one abutting boss. According to the heat exchange module, the inner walls of the collecting pipes are kept round, the pressure resistance of the collecting pipes can be guaranteed, and the abutting bosses are arranged on the outer walls of the collecting pipes, so that a plurality of heat exchange modules can be assembled and positioned conveniently.

Provided are: a coil board which ensures a withstand voltage and enables a motor having stable performance to be obtained, a motor coil board formed by using the coil board, and a motor formed by using the motor coil board. A coil board of an embodiment comprises: a flexible board having a first face and a second face on the opposite side to the first face; and coils formed by coil-shaped wires provided on the first face and coil-shaped wires provided on the second face. An inter-wire distance of the wires on the first face is greater than an inter-wire distance of the wires on the second face.

The utility model provides a packaging tin, which comprises a tin cover, a cutting line, a sealing strip, a sealing strip and a sealing strip, wherein the cutting line extends along the circumferential direction of the tin cover; the pull ring is connected to the portion, on the inner circumference of the nick line, of the can cover through a rivet, and the end, away from the axis of the can cover, of the pull ring corresponds to the nick line, and is characterized in that the portion, on the inner circumference of the nick line, of the can cover is sequentially provided with a first reinforcing structure, a second reinforcing structure and a third reinforcing structure in the direction close to the axis of the can cover, the end part corresponds to the part, between the axis of the rivet and the cutting line, of the pull ring; the second reinforcing structure is a closed curve, and a sunken part in the axis direction of the can cover is arranged at the position corresponding to the rivet. According to the utility model, the first reinforcing structure and the second reinforcing structure are arranged on the can cover, so that the force for pulling the pull ring is concentrated on the cutting line, a user can easily open the can cover when pulling the pull ring, the pull ring cannot fall off due to overlarge pulling force for pulling the pull ring, and the experience of the user is improved.

The application discloses an epitaxial structure of a semiconductor device, a preparation method of the epitaxial structure and the semiconductor device, and the epitaxial structure comprises a substrate, a transition layer and a gallium nitride epitaxial layer; the transition layer is located on one side of the substrate; the gallium nitride epitaxial layer is located on a side, away from the substrate, of the transition layer; wherein the thickness X of the transition layer and the thickness Y of the gallium nitride epitaxial layer satisfy: Y=c-(X-b)*a; X+Y<c+b; in the formula, c represents an initial thickness reference value of the gallium nitride epitaxial layer, Y<c; b represents an initial thickness reference value of the transition layer, X>b; the units of X, Y, c and b are all nanometers; a is a first coefficient, and is unitless, 1<a<=10. The scheme can guarantee the performance of the device, reduce the thickness of the epitaxial structure of the device, reduce the cost, and improve the production capacity of a production line.

The application discloses a cable processing device and a cable processing method, and relates to the technical field of cable processing, which comprises a closed control cabinet, supporting legs are fixedly installed at the four corners of the bottom of the closed control cabinet, a switch plate is arranged on the supporting legs, a handle is fixedly installed on the front side of the switch plate, and the closed control cabinet is characterized in that: inner ring plates are concentrically and rotatably installed at the two ends of an inlet and an outlet on the inner side of the closed control cabinet, and the two inner ring plates are fixedly connected through connecting rods. In the irradiation processing process, the multiple sets of centering rollers staggered and circumferentially distributed in cooperation with the irradiation lamps are in full contact with the outer surface of the cable, the cable is limited from multiple directions, and the cable is stably kept at the center position concentric with the inner ring plates, so that the problems of radial deviation, movement or swing of the cable in the continuous traction and conveying process are effectively avoided, the distance between the surface of the cable and the irradiation lamp is kept constant, the consistency of the irradiation dose and the processing stability are further improved, and the technical blank of the existing equipment without a synchronous centering mechanism is filled.

This invention discloses a semiconductor device, a fabrication method, a power module, a conversion circuit, and a vehicle. The semiconductor device includes: a semiconductor body comprising a well region and a first region; the first region being configured with a first conductivity type and located on a first surface, and the well region being configured with a second conductivity type and located on the side of the first region away from the first surface; the first surface having at least two trenches arranged at intervals; and at least one third region and at least one fourth region, both of the second conductivity type, and respectively located on the side of different trenches near the second surface; the distance from the third region to its corresponding trench is greater than the distance from the fourth region to its corresponding trench, and the distance between the third region and the fourth region is greater than zero; a gate located in a trench; a source located on the first surface; and a drain located on the second surface. The technical solution provided by this invention maintains low on-resistance and high cell density while suppressing electric field concentration at the bottom of the trench and reducing Miller capacitance.

A kind of terminal post structure of film capacitor, belong to electrical component technical field.The film capacitor includes shell, and the potting layer is potting in the potting cavity;Positive busbar and negative busbar are fixed in the upper portion of potting layer by potting layer, terminal post structure includes positive terminal post and negative terminal post, it is characterized that: the lower end of positive terminal post and around the surface of four around positive terminal post is formed as positive terminal post potting layer anchoring reinforcement surface, the lower end of negative terminal post and around the surface of four around negative terminal post is formed as negative terminal post potting layer anchoring reinforcement surface, the lower end of positive terminal post and negative terminal post is anchored with the potting layer by the positive terminal post potting layer anchoring reinforcement surface and negative terminal post potting layer anchoring reinforcement surface respectively.Advantages: can make positive terminal post and negative terminal post and potting layer present excellent anchoring effect, guarantee pressure resistance performance and moisture resistance performance, so that the service life of film capacitor can be reliably guaranteed.

The present invention relates to the technical field of vacuum micro-nanoelectronics, and more specifically, to an addressable flat-panel X-ray source driven by a high-voltage TFT and a preparation method thereof. The high-voltage TFT comprises a bottom gate electrode and a top gate electrode. An active layer arranged on the top of a gate insulating layer comprises a plurality of parallel channels, and a gap is formed between adjacent channels. The bottom gate electrode and the top gate electrode together form a double-gate structure, which enhances the regulation effect on the gate-controlled channel of the high-voltage TFT, can effectively improve the threshold voltage and subthreshold swing of the high-voltage TFT, and increase the saturation current; the gap between adjacent channels can enhance the heat dissipation effect, ensure that the device will not have the problem of thermal breakdown, and the parallel channel structure enables the double-gate high-voltage TFT to achieve a large current while ensuring its withstand voltage performance, thereby meeting the requirements of the flat-panel X-ray source for a high operating voltage and a large operating current of a driving unit, and realizing an addressable flat-panel X-ray source with high voltage, large current, high resolution and accurate current regulation.