7results about How to "Guaranteed withstand voltage" patented technology

This invention provides a quick-connect balloon dilation catheter and a method for preparing the balloon dilation catheter. The quick-connect balloon dilation catheter includes a catheter seat, an outer tube connected to the catheter seat, and a balloon connected to the distal end of the outer tube. The outer tube has a metal tube body extending from the proximal end to the distal end, the metal tube body having a non-cutting segment at the proximal end and a cutting segment connected to the distal end of the non-cutting segment. The outer tube also has a polymer inner liner covering the inside of the cutting segment and a polymer sheath covering the outside of the cutting segment, such that the outer tube is integrally formed as a composite tube segment with a metal tube segment at the proximal end and a composite tube segment connected to the distal end of the metal tube segment, the composite tube segment having a quick-connect port penetrating both the inside and outside. This design improves the catheter's delivery and positioning accuracy.

The utility model provides a single battery, battery pack and electronic device, this single battery includes casing, electrode assembly, lid and current collection member, the casing includes side wall, and the side wall surrounds to have the opening, electrode assembly installs in the casing, the lid blocks the opening, and is welded fixed with the side wall, current collection member sets up between the lid and electrode assembly, and current collection member and the current collection department of electrode assembly electric connection, wherein, at the side of lid away from electrode assembly, the lid includes thinning area, and the side surface of thinning area away from electrode assembly recess forms first recess, and the welding mark is formed by the welding connection of lid, side wall and current collection member, and the welding mark is located in first recess. The utility model can improve the technical problem of the welding quality of prior art because of the big thickness of lid, reduces the safety and the yield of single battery.

The application discloses an epitaxial structure of a semiconductor device, a preparation method of the epitaxial structure and the semiconductor device, and the epitaxial structure comprises a substrate, a transition layer and a gallium nitride epitaxial layer; the transition layer is located on one side of the substrate; the gallium nitride epitaxial layer is located on a side, away from the substrate, of the transition layer; wherein the thickness X of the transition layer and the thickness Y of the gallium nitride epitaxial layer satisfy: Y=c-(X-b)*a; X+Y<c+b; in the formula, c represents an initial thickness reference value of the gallium nitride epitaxial layer, Y<c; b represents an initial thickness reference value of the transition layer, X>b; the units of X, Y, c and b are all nanometers; a is a first coefficient, and is unitless, 1<a<=10. The scheme can guarantee the performance of the device, reduce the thickness of the epitaxial structure of the device, reduce the cost, and improve the production capacity of a production line.

The application discloses a cable processing device and a cable processing method, and relates to the technical field of cable processing, which comprises a closed control cabinet, supporting legs are fixedly installed at the four corners of the bottom of the closed control cabinet, a switch plate is arranged on the supporting legs, a handle is fixedly installed on the front side of the switch plate, and the closed control cabinet is characterized in that: inner ring plates are concentrically and rotatably installed at the two ends of an inlet and an outlet on the inner side of the closed control cabinet, and the two inner ring plates are fixedly connected through connecting rods. In the irradiation processing process, the multiple sets of centering rollers staggered and circumferentially distributed in cooperation with the irradiation lamps are in full contact with the outer surface of the cable, the cable is limited from multiple directions, and the cable is stably kept at the center position concentric with the inner ring plates, so that the problems of radial deviation, movement or swing of the cable in the continuous traction and conveying process are effectively avoided, the distance between the surface of the cable and the irradiation lamp is kept constant, the consistency of the irradiation dose and the processing stability are further improved, and the technical blank of the existing equipment without a synchronous centering mechanism is filled.

This invention discloses a semiconductor device, a fabrication method, a power module, a conversion circuit, and a vehicle. The semiconductor device includes: a semiconductor body comprising a well region and a first region; the first region being configured with a first conductivity type and located on a first surface, and the well region being configured with a second conductivity type and located on the side of the first region away from the first surface; the first surface having at least two trenches arranged at intervals; and at least one third region and at least one fourth region, both of the second conductivity type, and respectively located on the side of different trenches near the second surface; the distance from the third region to its corresponding trench is greater than the distance from the fourth region to its corresponding trench, and the distance between the third region and the fourth region is greater than zero; a gate located in a trench; a source located on the first surface; and a drain located on the second surface. The technical solution provided by this invention maintains low on-resistance and high cell density while suppressing electric field concentration at the bottom of the trench and reducing Miller capacitance.

A kind of terminal post structure of film capacitor, belong to electrical component technical field.The film capacitor includes shell, and the potting layer is potting in the potting cavity;Positive busbar and negative busbar are fixed in the upper portion of potting layer by potting layer, terminal post structure includes positive terminal post and negative terminal post, it is characterized that: the lower end of positive terminal post and around the surface of four around positive terminal post is formed as positive terminal post potting layer anchoring reinforcement surface, the lower end of negative terminal post and around the surface of four around negative terminal post is formed as negative terminal post potting layer anchoring reinforcement surface, the lower end of positive terminal post and negative terminal post is anchored with the potting layer by the positive terminal post potting layer anchoring reinforcement surface and negative terminal post potting layer anchoring reinforcement surface respectively.Advantages: can make positive terminal post and negative terminal post and potting layer present excellent anchoring effect, guarantee pressure resistance performance and moisture resistance performance, so that the service life of film capacitor can be reliably guaranteed.

The radiation source device for the X-ray machine comprises a square sealing cylinder, an X-ray tube core, a boosting transformer and an end face sealing cover, a base plate is arranged on the bottom side of an inner cavity of the square sealing cylinder, and a PCB is installed on the base plate beside the X-ray tube core; a KV sampling resistor and a filament transformer are respectively connected to the PCB on two sides of the boosting transformer, and an MA sampling resistor mounted on the PCB is arranged beside the filament transformer; a positive voltage-multiplying rectifying assembly and a negative voltage-multiplying rectifying assembly which are distributed in parallel are mounted on the PCB between the boosting transformer and the X-ray tube core; devices mounted on the base plate and the PCB are integrally packaged in the square sealing cylinder and sealed by the end face sealing cover, so that the boosting transformer and the X-ray tube are integrally integrated in a closed cavity, filling and sealing are facilitated, high frequency, small size and high power are met, and the requirement for miniaturization is met while the overall pressure resistance is guaranteed.