High-voltage-resistant semiconductor device

A semiconductor, high withstand voltage technology, applied in the direction of semiconductor devices, transistors, electric solid devices, etc., can solve the problem of withstand voltage drop of high withstand voltage semiconductor devices

Inactive Publication Date: 2003-01-08
PANASONIC CORP
View PDF0 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this way, as shown in FIG. 22, a P-type inversion layer 43 is generated between the guard ring regions 44 and 45, and the conduction between the guard ring regions 44 and 45 reduces the withstand voltage of the high withstand voltage semiconductor device.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-voltage-resistant semiconductor device
  • High-voltage-resistant semiconductor device
  • High-voltage-resistant semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0080] Below, refer to figure 1 Turning to FIG. 3, the high withstand voltage semiconductor device in Embodiment 1 will be described. figure 1 Fig. 2 schematically shows the cross-sectional structure of the high withstand voltage semiconductor device of the present embodiment, and FIG. 2 schematically shows the planar structure of the high withstand voltage semiconductor device of the present embodiment. In FIG. 2, only the silicone-made plate electrodes, metal electrodes, and N-type diffusion regions for contact are shown for easy viewing.

[0081] figure 1In the shown high withstand voltage semiconductor device, the plate electrodes 18a, 19a and a part (25-1, 25-2) of the metal electrodes provided through the interlayer insulating film 34 on them are capacitively coupled to each other, so as to prevent the The withstand voltage drops. The principle of preventing the withstand voltage drop at high temperature will be described later. The high withstand voltage semicond...

Embodiment 2

[0104] FIG. 5 schematically shows the cross-sectional structure of the high withstand voltage semiconductor device in the second embodiment. In this embodiment, different from the above embodiments, the lateral width of the metal electrodes 25-1, 25-2 is 1 / 2 of the plate electrodes 18a, 19a.

[0105] If the same verification as in Example 1 is carried out to the high withstand voltage semiconductor device of Example 2, in the structure of this example, because the potential (about 240V) of the semiconductor region 2 directly below the plate electrode 18a is in contact with the metal electrode 25 The potential difference of -1 voltage 600V is divided by the series circuit of Ca1 and Cb1 to obtain the potential difference (about 120V) between the plate electrode 18a and the semiconductor field 2, so the plate electrode 18a is about 360V. In addition, if the potential of the plate electrode 19a is verified, the potential is about 530V. This is because the potential is obtained b...

Embodiment 3

[0113] FIG. 6 schematically shows the cross-sectional structure of the main part of the high withstand voltage semiconductor device in the third embodiment. In the present example, unlike the second example, the ratio of capacitive coupling between plate electrodes and metal electrodes and capacitive coupling between plate electrodes and the semiconductor field 2 is different for each plate electrode. According to this structure, even if the insulating property of the surface protection film 35 is impaired, the influence on the plate electrode 19a on the high potential side can be reduced.

[0114] In the structure shown in FIG. 6, the lateral width of the ring-shaped metal electrode 25-1 is 1 / 2 of that of the plate electrode 18a, and the lateral width of the ring-shaped metal electrode 25-2 is increased. In short, the lateral width of ring-shaped metal electrode 25 - 2 is widened so as to cover the entire upper surface of plate electrode 19 a closest to N-type diffusion regio...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A high-voltage semiconductor device includes: a semiconductor region (2); a doped contact region (6); an isolating region (4); a field insulating film (16); a metal electrode (25) which is electrically connected with the N doped contact region (6); and floating plate electrodes (18a,19a). A section (25-1,25-2) of the metal electrode (25) is extended onto an interlayer dielectric film (34) and located over the respective plate electrodes (18a,19a). The extended section (25-1,25-2) is capacitively coupled to the plate electrodes (18a,19a), respectively. A CMOS circuit(7 to 11, etc), a resistor (13, etc), a capacitor (12, etc) are formed in a portion of the semiconductor region (2) which is surrounded with the N doped contact region (6).

Description

technical field [0001] The present invention relates to a high withstand voltage semiconductor device. In particular, it relates to high withstand voltage semiconductor devices for transformer control. Background technique [0002] Figure 16 The illustrated transformer control system for lighting is an example of a conventionally used high voltage semiconductor device for transformer control. Figure 16 The brief structure of the transformer control system for lighting is shown. [0003] Figure 16 The illustrated transformer control system for lighting includes: an LC resonant circuit including a fluorescent lamp 100, high withstand voltage power NchMOSFETs 101 and 102 for supplying power to the fluorescent lamp 100, and a high voltage side drive circuit 105 for driving the high withstand voltage power NchMOSFET 101. The drive circuit 106 is used to drive the low voltage side of the high withstand voltage power MOSFET 102 . The high voltage side drive circuit 105 is cons...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/76H01L27/06
CPCH01L27/0629H01L29/76
Inventor 野田正明生田晃久
Owner PANASONIC CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap