Silicon carbide semiconductor device and method for manufacturing same

An oxide semiconductor, semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as self-conduction and threshold voltage reduction

Active Publication Date: 2016-01-20
DENSO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] However, in the vertical MOSFET of the trench gate structure described in the above-mentioned Patent Document 1, there arises a problem that noise and th...

Method used

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  • Silicon carbide semiconductor device and method for manufacturing same
  • Silicon carbide semiconductor device and method for manufacturing same
  • Silicon carbide semiconductor device and method for manufacturing same

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no. 1 approach

[0028] refer to figure 1 A SiC semiconductor device in which an inverted vertical MOSFET with a trench gate structure is formed according to the first embodiment of the present application will be described.

[0029] figure 1 The shown SiC semiconductor device has a structure in which a vertical MOSFET with a trench gate structure is formed in a cell region, and although not shown, has a peripheral withstand voltage structure in an outer peripheral region surrounding the cell region.

[0030] SiC semiconductor devices use n + The front side of type substrate 1 is formed by the n + type substrate 1 compared to SiC with low impurity concentration n - A semiconductor substrate made of a type drift layer 2 is formed. no + type substrate 1 is set, for example, to have an n-type impurity concentration of 1.0×10 19 / cm 3 , n - type drift layer 2 is set, for example, to have an n-type impurity concentration of 0.5 to 2.0×10 16 / cm 3 .

[0031] in n - Base region 3 is forme...

no. 2 approach

[0059] A second embodiment of the present application will be described. Compared with the first embodiment, this embodiment has changed p + The rest of the structure of the SiC layer 5 is the same as that of the first embodiment, so only the parts different from the first embodiment will be described.

[0060] Such as Figure 5 As shown, in this embodiment, compared with the first embodiment, p + type SiC layer 5 depth such that p + Type SiC layer 5 has a depth up to a position in contact with base region 3 . with p + The various effects described in the first embodiment can also be obtained in the SiC layer 5 . Furthermore, since p + Type SiC layer 5 can be formed deep, so it is possible to pass from n + Type source region 4 surface ion implantation of p-type impurities to form p + Type SiC layer 5. Therefore, unlike the first embodiment, by embedding p in the trench + p + Compared with the case of the SiC layer 5, the manufacturing process can be simplified by ad...

no. 3 approach

[0063] A third embodiment of the present application will be described. This embodiment also changes p from the first embodiment + The rest of the structure of the SiC layer 5 is the same as that of the first embodiment, so only the parts different from the first embodiment will be described.

[0064] Such as Image 6 As shown, in this embodiment, p + Type SiC layer 5 is formed by dividing into two in the depth direction. Specifically, let it be assumed to have from n - The surface of the type drift layer 2 is formed to the lower layer portion 5a deeper than the trench gate structure, and from n + The structure of the upper layer portion 5b formed in such a way that the surface of the type source region 4 reaches the base region 3 . Played by the lower part 5a as p + The role of the deep layer is played by the upper part 5b as p + The role of the type contact layer.

[0065] with p + The various effects described in the first embodiment can also be obtained in the SiC...

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Abstract

This silicon carbide semiconductor device is provided with a vertical MOSFET including: a semiconductor substrate having a high-concentration impurity layer (1) and a drift layer (2); a base region (3); a source region (4); a trench gate structure; a source electrode (9); and a drain electrode (10). In the base region, a high-concentration base region (3a) and a low-concentration base region (3b) having a lower second conductivity-type impurity concentration than the high-concentration base region are laminated. The high-concentration base region and the low-concentration base region are in contact with the side surfaces of the trench.

Description

[0001] Cross References to Related Applications [0002] This application is based on Japanese application number 2013-118962 for which it applied on June 5, 2013, and uses the description content here. technical field [0003] The present application relates to a silicon carbide (hereinafter referred to as SiC) semiconductor device having a vertical MOSFET having a trench gate structure and a method of manufacturing the same. Background technique [0004] In a vertical MOSFET with an inverted trench gate structure, the following operation is performed: a gate voltage is applied to the gate electrode in the trench to form a channel in the p-type base region located on the side of the trench. A channel flows current between the drain and source. In such a vertical MOSFET, the on-resistance and the element breakdown voltage are largely dependent on the impurity concentration of the p-type base region. That is, if the impurity concentration of the p-type base region is reduce...

Claims

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Application Information

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IPC IPC(8): H01L29/78H01L21/336H01L29/06H01L29/12
CPCH01L29/7813H01L21/02529H01L21/02579H01L21/0262H01L21/041H01L29/1095H01L29/1608H01L29/66068
Inventor 竹内有一铃木巨裕森本淳副岛成雅
Owner DENSO CORP
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