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54results about How to "Reduce the chance of breakdown" patented technology

Low-temperature plasma generating device

The invention relates to the technology of purifying organic waste gas in the industry and aims to provide a low-temperature plasma generating device. A reactor of the device comprises an electric corona tube support, insulators, an upper baffle and a lower baffle in a sequential connection mode, and n plasma reacting cavities are formed in parallel. Outer shells of the reacting cavities are in a hollow cylinder shape, and electric corona tubes and the outer shells of the reacting cavities are coaxial. Multiple bars of discharging fluff made of metal material are evenly distributed on the outer walls of the electric corona tubes in a spiral step shape. Inward extending lines of the discharging fluff pass through the axes of the electric corona tubes. The electric corona support is provided with supporting pillars perpendicular downwards, the supporting pillars are sleeved with the electric corona tubes, and rain caps are arranged at the bottoms of the electric corona tubes. High-energy electrons, ions, atoms in an excited state, free radical particles and other high-activity substances generated by the device are improved by 35% on the basis of the same-size reactor, and effective reaction space is enlarged. Because fluff-shaped electrodes are adopted, the probability of breakdown of a positive electrode and a negative electrode is greatly reduced, and energy consumption is greatly reduced.
Owner:浙江菲尔特环保工程有限公司

Low-temperature plasma waste gas treatment apparatus

The present invention relates to a low-temperature plasma waste gas treatment apparatus, which comprises a housing, a filtration module, a low-temperature plasma reaction module and an active carbon fiber filtration module, wherein the filtration module, the low-temperature plasma reaction module and the active carbon fiber filtration module are arranged in the housing, the low-temperature plasma reaction module comprises a first fixation plate, a second fixation plate and n low-temperature plasma reaction tubes arranged between the first fixation plate and the second fixation plate at intervals, the n low-temperature plasma reaction tubes penetrate through the first fixation plate and the second fixation plate and extend along the flowing path of a fluid, the n low-temperature plasma reaction tubes respectively comprise a cathode outer tube, an insulating medium inner tube and an anode rod arranged in the insulating medium inner tube, the cathode outer tube, the insulating medium inner tube and the anode rod form a concentric circle structure, an annular gap is arranged between the cathode outer tube and the insulating medium inner tube, the anode rod is fixed on an anode rod bracket, and a plurality of discharging fluffs prepared from a metal are uniformly distributed on the outer wall of the anode rod in a spiral ladder manner. According to the present invention, the low-temperature plasma waste gas treatment apparatus has advantages of simple structure, low manufacturing cost, good waste gas treatment effect, convenient operation, and convenient maintenance.
Owner:苏州盟力环境科技有限公司

Filter drum deduster

ActiveCN102553365ADecreased filtration rateReduce the load of filtration and purificationDispersed particle filtrationFiltrationEmission standard
The invention is an improvement of a filter drum deduster. The deduster is characterized in that a rigid non-compression eccentric rotating interference compressing piece is used for compressing between an air-out end surface of the filter drum and an overhung pore plate; a cushion space which is not less than 30cm is reserved between the bottom of the filtering drum and the bottom plane of a filtering drum box body; and a filtering air inlet is arranged in the cushion space at the lower part of the filtering drum. According to the deduster provided by the invention, over-diameter particles are ensured not to exist in the filtered gas, the filtering material is prevented from being damaged effectively, the service life of the filtering drum is prolonged, two main defects which are hard to solve by a traditional filtering drum deduster are solved completely, and the effective service life of the filtering drum is prolonged from originally maximum twelve months to eighteen months. A frame type filter is added above a filtering drum air outlet by being connected with a transition section interval, the filter precision of the frame type filter is higher than the filter grade of the lower filtering drum, thereby forming secondary filtration of upper and lower inter-phase serial connection; the minimum filtering precision can be 0.1 microns; the filter drum deduster provided by the invention can be used in the lead-acid battery industry for filtering lead dust and fume, and the dust content of the filtered gas is not more than 0.07mg/m<3>, which is far less than the national emission standard; the filtration resistance is increased by more or less than 10% on the basis of previous grade, so that the contradiction between the filtering precision and the filtering resistance is balanced well.
Owner:江苏二环环保科技有限公司

Multi-layer ceramic laminar capacitor

InactiveCN103811182ASmall physical areaThere will be no problem of separation from each otherFixed capacitor electrodesStacked capacitorsPuncture resistanceHigh pressure
The invention discloses a multi-layer ceramic laminar capacitor. The multi-layer ceramic laminar capacitor comprises a laminar main body, a first lead and a second lead, wherein the laminar main body comprises two outer electrodes, and a first medium layer, a second medium layer and a third medium layer which are positioned between the two outer electrodes; the first medium layer is provided with two inner electrodes a which are distributed at a certain interval and are in the forms of small rectangles, and the two inner electrodes a are connected with the two outer electrodes respectively; the second medium layer is provided with two inner electrodes b which correspond to the positions of the two inner electrodes a and are in the forms of large rectangles; the third medium layer is provided with two inner electrodes c which correspond to the positions of the inner electrodes a and the inner electrodes b and are in the forms of frame-type quadrangles; the third medium layer is positioned between the first medium layer and the second medium layer, and the three medium layers are overlapped in sequence; the first lead and the second lead are arranged outside the outer electrodes respectively, and transverse epitaxial segments are arranged on portions connected with the outer electrodes. By adopting the multi-layer ceramic laminar capacitor, the high-voltage puncture resistance can be improved greatly under the condition of not basically increasing the overall dimensions.
Owner:CHENGDU RONGHUA ELECTRONICS

Solid tantalum electrolytic capacitor and manufacturing method thereof

The invention discloses a solid tantalum electrolytic capacitor comprising a tantalum anode body, an Ra2O5 dielectric envelope, a conducting layer, a graphite layer and a silver coating, wherein the Ra2O5 dielectric envelope is positioned on the surface of the tantalum anode body, the conducting layer is positioned on the Ra2O5 dielectric envelope, and the graphite layer and the silver coating are coated on the conducting layer. The solid tantalum electrolytic capacitor is characterized in that the conducting layer is a mixed system of composite carbon nano tubes and high-polymer conducting materials, the length directions of the composite carbon nano tubes are perpendicular to the surface of the tantalum anode body, the composite carbon nano tubes are carbon nano tubes with the surfaces uniformly attached with nano particles in a shell-core structure, and the nano particles in the shell-core structure are nano particles using magnetic nano particles as cores, wherein the surfaces of the nano particles are coated with conducting shell layers. Because the directionally arranged composite carbon nano tubes are adopted in the conducting layer, the conductivity of the conducting layer is increased, and the equivalent series resistance of the capacitor is reduced, thereby the high-frequency characteristic of the capacitor is improved.
Owner:UNIV OF ELECTRONIC SCI & TECH OF CHINA

Solid tantalum electrolytic capacitor and manufacturing method thereof

The invention discloses a solid tantalum electrolytic capacitor. The capacitor comprises a tantalum anode body, a Ta2O5 dielectric envelope, a conducting layer, a graphite layer and a silver-coated layer, wherein the Ta2O5 dielectric envelope is positioned on the surface of the tantalum anode body; the conducting layer is positioned on the Ta2O5 dielectric envelope; and the graphite layer and the silver-coated layer are coated on the conducting layer. The capacitor is characterized in that: the conducting layer is a mixed system consisting of a composite carbon nano-tube and a conducting high molecular material; the composite carbon nano-tube is a carbon nano-tube of which the surface is attached to conductive nano-particles and magnetic nano-particles uniformly; and the length direction of the composite carbon nano-tube is vertical to the surface of the tantalum anode body. Directionally-arrayed composite carbon nano-tubes are adopted in the conducting layer, so that the conductivity of the conducting layer is enhanced, the equivalent series resistance of the capacitor is reduced and the high-frequency characteristic of the capacitor is improved; simultaneously, the carbon nano-tube has high thermal conductivity, so that the capacitor has higher heat resistance, the service life of the capacitor is prolonged and the leakage current is reduced.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA

Novel silicon carbide MOSFET (Metal Oxide Semiconductor Field Effect Transistor)

The invention relates to a semiconductor device, and in particular discloses a novel silicon carbide MOSFET (Metal Oxide Semiconductor Field Effect Transistor) which is applied to occasions of electrical equipment such as an alternating current motor, a frequency converter, a switch power supply, traction transmission equipment and the like under high-voltage conditions. The novel silicon carbide MOSFET comprises a drain electrode (1) which is arranged at a lower end as well as a source electrode (8) and a gate electrode (9) which are arranged at an upper end, wherein a buffer region (2) and a drift region (3) are sequentially connected above the drain electrode (1), a source region (7) is arranged below the source electrode (8), a gate insulation layer (5) is arranged below the gate electrode (9), a P-type well region (6) is arranged below the source region (7), and a P-type doping region (4) is arranged below the gate insulation layer (5). According to the invention, on the basis of a common MOSFET structure, the doping region with low concentration is additionally arranged on the surface of a substrate below the gate electrode so that an electric field in the gate insulation layer is weakened when the high voltage is applied to the device, thereby lowering the breakdown probability of the insulation layer and improving the integral withstand voltage of the silicon carbide MOSFET.
Owner:ZHEJIANG UNIV

Carbon fiber reinforced anti-corrosion PA66 (polyamide 66)/PP (propene polymer) electric power fitting material and preparation method thereof

The invention discloses a carbon fiber reinforced anti-corrosion PA66 (polyamide 66) / PP (propene polymer) electric power fitting material and a preparation process thereof. The carbon fiber reinforced anti-corrosion PA66 / PP electric power fitting material and the preparation process thereof are characterized by using PA66, carbon fibers, glass fibers, PP, melamine cyanurate, zinc borate, aluminum hypophosphite, bamboo charcoal, silicon rubber, waterborne polyurethane, maleic anhydride grafted polypropylene, a bovine serum albumin solution, potassium hexatitanate whiskers, graphene oxide, multiwalled carbon nanotubes, epoxy resin, hollow glass beads, dibutyl phthalate, dimethyl silicone oil, polyamide, ethylene-octene copolymer-grafted-maleic anhydride, epoxy resin, guar gum, diethylenetriamine, petroleum pitch, silica sol, sodium silicate and the like as raw material. The preparation process of the carbon fiber reinforced anti-corrosion PA66 / PP electric power fitting material uses the zinc borate to wrap the melamine cyanurate so as to obtain composite flame retardant, uses bovine serum albumin to modify surfaces of glass fibers, prepares a graphite oxide-coated glass fiber composite by adopting an electrostatic adsorption principle, obtains the carbon fiber reinforced PA66 having excellent mechanical performance, self-lubrication performance and conductivity, and obtains the carbon fiber reinforced anti-corrosion PA66 / PP electric power fitting material.
Owner:马鞍山市华能电力线路器材有限责任公司

Chip aluminum electrolytic capacitor

The invention discloses a chip aluminum electrolytic capacitor. The chip aluminum electrolytic capacitor comprises a shell provided with an opening; a core bag is arranged in the shell; an electrolyteis immersed in the core bag; the core bag comprises stacked cathode foil and anode foil; electrolytic paper serving as substrates is arranged on the same sides of the cathode foil and the anode foil;a flash voltage of the electrolyte is higher than 300V, and the temperature resistance of the electrolyte reaches 125 DEG C; the tightness of the electrolytic paper is not less than 0.60g/cm<3>; theanode foil and the cathode foil adopt aluminum foils with high cubic structures; and the content of the cubic structures is more than 80%. According to the chip aluminum electrolytic capacitor, the electrolyte can ensure the flash voltage and obtain relatively high electrical conductivity; the voltage resistance and the high temperature resistance of the capacitor can be improved; the volatilization speed of the electrolyte during high-temperature working can be reduced; the saturated steam pressure can be reduced; the high-voltage resistance and the high-temperature resistance of the aluminumelectrolytic capacitor are improved; the probability that the capacitor is broken down is effectively reduced; and the stability and reliability of a product are improved.
Owner:ZHAOQING BERYL ELECTRONICS TECH

Solid tantalum electrolytic capacitor and manufacturing method thereof

The invention discloses a solid tantalum electrolytic capacitor comprising a tantalum anode body, an Ta2O5 dielectric envelope, a conducting layer, a graphite layer and a silver coating, wherein the Ta2O5 dielectric envelope is positioned on the surface of the tantalum anode body, the conducting layer is positioned on the Ra2O5 dielectric envelope, and the graphite layer and the silver coating are coated on the conducting layer. The solid tantalum electrolytic capacitor is characterized in that the conducting layer is a mixed system of composite carbon nano tubes and high-polymer conducting materials, the length directions of the composite carbon nano tubes are perpendicular to the surface of the tantalum anode body, the composite carbon nano tubes are carbon nano tubes with the surfaces uniformly attached with nano particles in a shell-core structure, and the nano particles in the shell-core structure are nano particles using magnetic nano particles as cores, wherein the surfaces of the nano particles are coated with conducting shell layers. Because the directionally arranged composite carbon nano tubes are adopted in the conducting layer, the conductivity of the conducting layer is increased, and the equivalent series resistance of the capacitor is reduced, thereby the high-frequency characteristic of the capacitor is improved.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA

Solid tantalum electrolytic capacitor and manufacturing method thereof

The invention discloses a solid tantalum electrolytic capacitor comprising a tantalum anode body, a Ta2O5 dielectric envelope, a conducting layer, a graphite layer and a silver coating, wherein the Ta2O5 dielectric envelope is positioned on the surface of the tantalum anode body, the conducting layer is positioned on the Ta2O5 dielectric envelope, and the graphite layer and the silver coating are coated on the conducting layer. The solid tantalum electrolytic capacitor is characterized in that the conducting layer is a high-polymer conducting layer doped with magnetic carbon nano tubes, wherein the length directions of the magnetic carbon nano tubes are perpendicular to the surface of the tantalum anode body. Because the directionally arranged magnetic carbon nano tubes are adopted in the conducting layer, the conductivity of the conducting layer is increased, the equivalent series resistance of the capacitor is reduced so that the high-frequency characteristic of the capacitor is improved, and meanwhile, because the carbon nano tubes have excellent thermal conductivity, the capacitor has higher thermal resistance, prolonged service life, and reduced leakage current.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA

Semiconductor device and forming method thereof

The invention provides a semiconductor device and a forming method thereof, and the method comprises the following steps: providing a substrate, and forming a first sub-fin part after removing a partof fin parts in thickness on the substrate; adjusting the end, away from the substrate, of the first sub-fin part to enable S1 to be greater than or equal to S2, wherein S1 is the distance from the middle area of the end face of one end of the first sub-fin part to the substrate, and S2 is the distance from the edge area of the end face of the first sub-fin part to the substrate, and in a cross section formed perpendicular to the length direction of the first sub-fin part, the contour line of one side, far away from the substrate, of the first sub-fin part is in smooth transition. The semiconductor device is manufactured through the forming method of the semiconductor device. The distance from the middle area of the end face of one end of the first sub-fin part to the substrate is greaterthan or equal to the distance from the edge area of the first sub-fin part to the substrate, the contour line of the side, away from the substrate, of the first sub-fin part is in smooth transition, the probability that the bottom area of the first sub-fin part is broken down by voltage can be reduced, and therefore the performance of the semiconductor device is optimized.
Owner:SEMICON MFG INT (SHANGHAI) CORP +1

A Chip Type Aluminum Electrolytic Capacitor

The invention discloses a chip aluminum electrolytic capacitor. The chip aluminum electrolytic capacitor comprises a shell provided with an opening; a core bag is arranged in the shell; an electrolyteis immersed in the core bag; the core bag comprises stacked cathode foil and anode foil; electrolytic paper serving as substrates is arranged on the same sides of the cathode foil and the anode foil;a flash voltage of the electrolyte is higher than 60V, and the temperature resistance of the electrolyte reaches 125 DEG C; the tightness of the electrolytic paper is not less than 0.55g / cm<3>; the anode foil and the cathode foil adopt aluminum foils with high cubic structures; and the content of the cubic structures is more than 80%. According to the chip aluminum electrolytic capacitor, the electrolyte can ensure the flash voltage and obtain relatively high electrical conductivity; the voltage resistance and the high temperature resistance of the capacitor can be improved; the volatilization speed of the electrolyte during high-temperature working can be reduced; the saturated steam pressure can be reduced; the high-voltage resistance and the high-temperature resistance of the aluminumelectrolytic capacitor are improved; the probability that the capacitor is broken down is effectively reduced; and the stability and reliability of a product are improved.
Owner:江华绿宝石新能源储能科技有限公司
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