146results about How to "Avoid over etching" patented technology

The invention discloses a PCB circuit manufacturing method and a PCB. The method comprises the following steps: using a thin copper foil with the diameter of 10 to 13 microns as the outermost layer ofcopper foil of a type setting PCB, then laminating, reducing the copper on the outer layer to be 7 to 9 microns after laminating, then carrying out hole drilling and low-speed chemical adhesive cleaning, using vertically continuous electroplating manufacturing in later electroplating working procedure, controlling the thickness of copper on the inner wall of the hole to be 15 to 20 microns and the thickness of copper on the surface to be 24 to 30 microns, then carrying out surface roughening in a cinerite spraying mode for turning off a polishing brush, then using a laser direct imaging exposure machine for exposure in the manufacturing process of an outer circuit, carrying out developing and etching by using a low-pressure and high-speed mode, and presetting 10% to 20% of a circuit compensating value in advance. The problems, such as a great number of too thin and too wide lines, excessive etching, under developing, short circuits and open circuits existing in the circuit manufacturing process, of the PCB product with fine circuits (for example, the ratio of line width to line gap is smaller than or equal to 2 mil/2 mill) can be solved.

The invention provides a memory device and a manufacturing method thereof. Forming a sacrificial layer in a first sub-channel hole in a first stacked layer; then forming an etch stopping layer; and then continuing to form a second stacked layer over the etch stopping layer; forming a second sub-channel hole above the first sub-channel hole using the etch stopping layer as an etching focus when thesecond sub-channel hole is formed in the second stacked layer; so that a through channel hole is formed after the etch stopping layer above a second sacrificial layer and the second sacrificial layerare removed. Therefore, the integration of the memory device is effectively improved; meanwhile, the over etching to the second sacrificial layer is avoided during etching of the second sub-channel hole by setting the etch stopping layer; therefore, the process stability is improved, and the device yield is increased.

Disclosed are a MIM capacitor and a manufacturing method thereof. The manufacturing method includes: setting a covering layer on a second conducting layer (used for forming an upper electrode plate of an MIM capacitor). Etching gas which is slower in etching the covering layer than etching dielectric layers is selected in the process of dry etching performed to form through holes respectively exposing a first conducting layer (a lower electrode plate) and a second conducting layer, so that excessive etching of the second conducting layer (the upper electrode plate) is avoided when the dielectric layers embedding the second conducting layer and the first conducting layer are etched simultaneously at the same height. Thus, probability of breakdown of the MIM capacitor is lowered, and reliability of the MIM capacitor is increased.

The invention discloses transparent super-hydrophobic glass with anti-fog and dewdrop self-cleaning functions and a preparation method of the transparent super-hydrophobic glass. The preparation method comprises the steps of: performing high-temperature phase splitting treatment on sodium borosilicate glass to form an alkali-rich sodium-boron phase and a silicon-rich oxygen phase which are interpenetrated, then removing the alkali-rich sodium-boron phase through an acid etching process to reserve a high-silicon-content glass-phase porous three-dimensional network structure coating, and finallyreducing the surface energy through a fluorination process to obtain a transparent super-hydrophobic glass coating. The transparent super-hydrophobic glass with anti-fog and dewdrop self-cleaning functions and the preparation method of the transparent super-hydrophobic glass have the advantages of a simple process, easy operation, low requirements for equipment and low cost, and a new idea is provided for the preparation of transparent glass with a self-cleaning property.

The invention provides a method for removing residual photoresist, which comprises the following steps: providing a semiconductor substrate; performing plasma treatment on the semiconductor substrate to remove the residual photoresist; and taking a photoresist layer as a mask to treat a second doped region and remove the photoresist layer, wherein the semiconductor substrate is provided with a first doped region, a second doped region and a graphic photoresist layer; the photoresist layer covers the first doped region on the semiconductor substrate and exposes the second doped region; the first doped region is doped with first ions by injecting ions; a junction region is arranged at the junction of the second doped region and the first doped region; the junction region has different light reflection performances with other parts of the second doped region; and the junction region is reserved with the residual photoresist. The residual photoresist generated by the difference of the light reflection performances on the junction region is removed by the method, and the influence of the residual photoresist on the process of the second doped region for subsequent treatment is prevented.

The invention provides a preparation method of a NiAu projection. The method comprises that a Ti or TiW metal layer and an Au metal layer are formed between a wafer and the NiAu projection from top to bottom, the Au metal layer outside the projection is removed from top to bottom in a physical dry etching manner, the Ti or TiW metal layer is removed via a wet etching manner, and reaction of a galvanic cell and excessive etching of the Ni material of the projection caused by the wet etching manner are avoided. The invention also provides a NiAu projection assembly which comprises the projection, a seed metal layer and a substrate metal layer, wherein the projection comprises a reserved layer, the Au metal layer and a Ni metal layer are successively from top to bottom, the seed metal layer and the substrate metal layer are arranged at the bottom of the projection, the lateral side of the Au metal layer and the lateral side of the projection are leveled in the vertical direction, and relatively large combination area and combination force between the projection and the wafer are ensured.

A method for forming a CMOS transistor comprises the following steps: providing a semiconductor substrate consisting of a first region and a second region, wherein a first dummy gate structure, first spacers on the two side surfaces of the first dummy gate structure and a first hard mask layer on the first dummy gate structure are formed on the first region, and a second dummy gate structure and second spacers on the two side wall surfaces of the second dummy gate structure are formed on the second region; forming a second hard mask layer; forming a filling layer covering the second hard mask layer and a mask layer disposed on part of the surface of the filling layer on the second region on the surface of the semiconductor substrate; etching a partial thickness of the filling layer on the first region and part of the second hard mask layer on the top of the first dummy gate structure; and removing the filling layer, the mask layer and the second hard mask layer, and forming a first stress layer covering the first dummy gate structure and a second stress layer covering the second dummy gate structure. By adopting the method of the invention, the performance of a formed CMOS transistor can be improved.

The invention provides a novel wafer level tin solder micro bump manufacturing method, and belongs to the field of semiconductor chip packaging. Photoresist of which the opening is formed through exposure development is utilized to act as a mask film firstly. A copper layer, a barrier layer and solder alloy are electroplated on an under bump metal layer in turn, and the solder alloy is enabled to completely wrap a copper layer-barrier layer of the bottom part. Then tin solder micro bumps are formed via a method of backflow and then photoresist removing. Finally the micro bumps act as an etching mask film and a wet etching technology is adopted to remove the excess under bump metal layer. Excessive etching of electroplating copper of a bump layer in isotropic etching of the under bump metal layer can be avoided, and bridging caused by collapsing of backflow of the micro bumps can be avoided so that reliability of the micro bumps and packaging products can be enhanced.

A method for forming contact holes is disclosed and comprises: an underlayer, on which a plurality of grids is formed, is provided and the side walls of the grids have side wall layers; an added medium layer is deposited on the undeerlayer; the added medium layer is corroded and added side wall layers are formed at the side walls of the grids; a corroding and stopping layer is deposited on the underlayer; an interlaminar medium layer is deposited on the corroding and stopping layer; the interlaminar medium layer is made into a design and is corroded to form contact holes. The invention, through thickening the thickness of the side wall layer of the grids, strengthens the protection of the side wall of the grids, avoids over-corrosion of side wall layers, prevents the damage of groove and the drift of the device properties, and increases the rate of finished products and the reliability of devices while the device parameter remains the same.

The invention provides a plasma etching technology comprising a dielectric layer penetrating and etching step and a silicon main etching step, wherein, technical gas in the dielectric layer penetrating and etching step comprises fluorine-base etching gas, first light resistance protection gas and dilution gas; technical gas in the silicon main etching step comprises main etching gas, carbon-base by-product removing gas and second light resistance protection gas. In a preferable embodiment, the fluorine-base etching gas is CF4 or SF6, the first light resistance protection gas is CH2F2 or CHF3 or HBr, and the dilution gas is He, Ar or N2; the main etching gas is Cl2, the carbon-base by-product removing gas is O2, and the second light resistance protection gas is HBr. In semiconductor plasma etching, the invention can improve sidewall steepness in figure etching and prevent the upper edge and the lower edge of a line from producing fillets.

The invention is applicable to the technical field of display panel, and provides a manufacturing method of an active element array substrate, comprising the following steps of: firstly, forming a gate, a capacitor electrode, a first insulating layer, a channel layer, a source electrode and a drain electrode; secondly, forming a second insulating layer on the substrate on all sides, and forming a patterning photo-resistant layer on the substrate; thirdly, removing the second insulating layer above the drain electrode and the capacitor electrode to form a contact window and an opening by taking the patterning photo-resistant layer as a mask, wherein the contact window is exposed out of the drain electrode, while the opening is exposed out of the first insulating layer positioned above the capacitor electrode; and fourthly, forming a pixel electrode on the substrate, wherein the pixel electrode passes through the contact window so as to be electrically connected with the drain electrode and filled in the opening. A storage capacitor is formed by the pixel electrode, the capacitor electrode, and the first insulating layer positioned between the pixel electrode and the capacitor electrode. In the invention, the manufacturing method of the active element array substrate has good process yield, and can avoid the occurrence of over-etching or insufficient etching.

The invention discloses a method for preventing over etching of passivation layers, comprising the following steps of: step A, preparing two passivation layers different in compactness on a substrate, wherein the passivation layer close to the side of the substrate is a compact passivation layer, while the passivation layer far away from the side of the substrate is a loose passivation layer; step B, applying a photoresist on the passivation layers through spin coating, and exposing and developing the photoresist according to a predetermined element template; step C, with the photoresist left after exposure and development on the substrate as the mask, performing dry etching on the loose passivation layer; and step D, with the photoresist left after exposure and development on the substrate as the mask, performing wet etching on the compact passivation layer. The method provided by the invention avoids over etching of the base layer SiC and also guarantees the etching quality by growing two SiO2 layers different in compactness and separately etching the two SiO2 layers different in compactness by combining the advantages of the wet etching and the dry etching.

A forming method of a semiconductor structure includes: providing a substrate having a plurality of gate structures on the surface, with the sidewall surface, provided with a sidewall, of each gate structure and impurity arranged on the surface of the substrate between each two adjacent sidewalls; putting the substrate in a sputtering etching chamber, subjecting the surface of the substrate between the adjacent sidewalls to primary sputtering etching which is used for primary removal of the impurity and which provides a first radio frequency power and a first direct-current bias voltage; and subjecting the surface of the substrate to secondary sputtering etching which is used for secondary removal of the impurity and which provides a second radio frequency power and a second direct-current bias voltage. The second radio frequency power is less than the first radio frequency power; the second direct-current bias voltage is greater than the first direct-current bias voltage. The forming method has the advantages that an advancing direction of a plasma beam is perpendicular to the surface of the substrate in the sputtering etching process, the impurity is more effectively removed by etching, and impact of the plasma beam upon the surfaces of the sidewalls is decreased.

The invention discloses an NOR-type flash memory unit for lifting a common source region and a preparation method thereof. The flash memory unit comprises a substrate; common source and drain regions formed below the surface of the substrate through injection; a channel region formed on the surface of the substrate between the common source and drain regions; a tunneling layer formed over the channel region; a storage layer formed over the tunneling layer; a barrier layer formed over the storage layer; and a gating electrode formed over the barrier layer. In the forming process of the common source region, an epitaxial process is first used for lifting the common source region, and then low resistance connection is formed between below the shallow slot isolation region and the common source region through ion injection for below a shallow slot isolation region and the common source region of the flash memory unit. Through the introduction of the epitaxial process, the shallow slot isolation region expands along an active region in a channel width direction along while the common source region is lifted, punch-through effects are effectively simulated in the size reduction process of a conventional NOR-type flash memory device, and the NOR-type device is further scaled down in a channel length direction.

The invention discloses a crystalline silicon solar cell resource classifying recycling method. The crystalline silicon solar cell resource classifying recycling method comprises the following steps: cleaning crystalline silicon solar cells to obtain clean silicon wafers; removing aluminium from the surfaces of the silicon wafers; removing silver from the surfaces of the silicon wafers; removing anti-reflecting layers and N-type knots from the surfaces of the silicon wafers; at room temperature, cleaning the silicon wafers from which the aluminium and the silver are removed, and placing the silicon wafers in a mixed acid aqueous solution, wherein the mixed acid aqueous solution comprises HNO3 with the volume fraction of 39 to 41 percent and HF with the volume fraction of 5.5 to 6.5 percent; and enabling the silicon wafers to react for over 75 minutes in the mixed acid aqueous solution to obtain pure silicon wafers. According to the crystalline silicon solar cell resource classifying recycling method, the aluminium is removed by adopting hydrochloric acid; a good effect of removing the blue anti-reflecting layers and the N-type knots from the silicon wafers is achieved in a mode of mixed acid of nitric acid and hydrofluoric acid; and the silicon wafers with high purity can be obtained.

The invention provides a preparing method of a triaxial anisotropic magnetoresistor. The preparing method includes: in first etching, etching only magnetic material on the bottom surface of a trench; in second etching, etching the magnetic material on the surface of a substrate to form planar magnetic resistance and vertical resistance spaced, thereby forming the triaxial anisotropic magnetoresistor. The bottom surface of the trench and the surface of the substrate are never etched at the same time, and thus, the surface of the substrate being over-etched due to difference of etching rates is avoided. Therefore, separate etching of the magnetic material on the trench and that on the surface of the substrate leads to no over-etching and ensures performance of the triaxial anisotropic magnetoresistor.

The invention provides a manufacturing method of a semiconductor device, which comprises the following steps of: removing a dielectric layer with partial thickness in a peripheral region through a dryetching process, so that over etching of the dielectric layer can be avoided, and pits are prevented from being formed in a control gate layer; then removing the residual dielectric layer in the peripheral region through a wet etching process, removing pollutants generated in dry etching in the previous step, avoiding the residual of the dielectric layer, and then removing a control gate layer, aspacer layer and a floating gate structure layer in the peripheral region. Since pits are prevented from being formed in the control gate layer, when the control gate layer, the spacer layer and thefloating gate structure layer in the peripheral region are removed, pits can be prevented from being formed in the semiconductor substrate in the active region, and the problems of defects caused by the pits and pollution to a semiconductor device are solved.