The invention relates to the technical field of electronic material and
semiconductor manufacturing, and discloses a DCB substrate high-precision pattern half-
etching processing technology. The method comprises the steps that S1, a DCB substrate is taken, cleaned, coarsened and washed with water; s2, a negative dry film is attached to the
copper surface of the DCB substrate treated in the step S1 in a
hot pressing mode to serve as an anti-
etching mask; s3, designing a
laser engraving pattern; s4, performing scanning
exposure on the DCB substrate pressed and covered with the dry film in the step S2 by adopting
laser direct imaging equipment according to the
laser engraving pattern designed in the step S3; s5, developing the DCB substrate subjected to scanning
exposure in the step S4 by using a developing solution to form a graphical anti-
etching window; s6, immersing the DCB substrate developed in the step S5 into an etching solution, and etching the
copper layer exposed from the anti-etching window; and S7, taking the DCB substrate after chemical etching in the step S6, removing the dry film, washing with water, and
drying. The method has high precision and high flexibility, and the product quality is remarkably improved.