Hardmask compositions having antireflective properties useful in lithographic processes, methods of using the same, and
semiconductor devices fabricated by such methods, are provided. Antireflective hardmask compositions of the invention include:(a) a
polymer component including at least one
polymer having a monomeric unit of Formula (I)whereinR1 and R2 may each independently be
hydrogen, hydroxyl,
alkyl,
aryl, allyl, halo, or any combination thereof;R3 and R4 may each independently be
hydrogen, a crosslinking functionality, a
chromophore, or any combination thereof;R5 and R6 may each independently be
hydrogen or an alkoxysilane group;R7 may each independently be hydrogen,
alkyl,
aryl, allyl, or any combination thereof; and n may be a positive integer;(b) a crosslinking component; and(c) an acid catalyst.