11 results about "Partial thickness" patented technology

The utility model provides a collector plate, a battery and electric equipment. The flow collecting disc comprises a flow collecting disc body and a turnover piece, a through hole is formed in the flow collecting disc body, the turnover piece is arranged at the through hole, the turnover piece comprises a flow collecting part and a connecting part, the connecting part is connected with the flow collecting part and the flow collecting disc body, the partial thickness of the connecting part is smaller than the thickness of other parts of the connecting part, and / or the turnover piece is arranged on the flow collecting disc body. The thickness of at least part of the connecting part is smaller than that of the collector plate body, and / or the thickness of at least part of the connecting part is smaller than that of the collector part. According to the collector plate, the turnover piece is easier to turn over, the turnover angle of the turnover piece is guaranteed, and the unfolding effect of the collector plate is improved.

The utility model discloses a PTFE special-shaped belt measuring device which comprises a base, the top of the base is fixedly connected with a fixing frame, the top of the fixing frame is provided with a feeding port, the lower top face of the fixing frame is fixedly connected with a pair of fixing blocks, the bottoms of the fixing blocks are fixedly connected with a positioning frame, the top of the positioning frame is provided with a material guiding port, and the two sides of the positioning frame are provided with positioning holes. A bolt is in threaded connection with the interior of the positioning hole, a sliding groove is formed in the fixing frame, and a measuring mechanism is installed on the fixing frame. According to the utility model, the thickness of the PTFE special-shaped belt can be measured without contact so as to prevent errors of the measured thickness caused by deformation of the PTFE special-shaped belt, the PTFE special-shaped belt can be suspended and fixed so as to prevent local thickness distortion caused by tilting or wrinkling in the thickness measurement process, the flexibility is good, and the measurement precision is high. The height position of the measuring mechanism can be adjusted according to the length size of the PTFE special-shaped belt, and the measuring mechanism can be detached and replaced when a fault occurs.

According to the NORD flash memory device and the manufacturing method thereof provided by the invention, when the hard mask layer on the gate stack is patterned, the hard mask layer with partial thickness is reserved, and the first side wall is thinned, so that when the second side wall and the third side wall are formed by deposition and etching, the thickness of the second side wall is reduced, and the thickness of the third side wall is reduced. The position, where a defect point is prone to being generated, of the third side wall in the etching process is transferred to the vertex angle of the hard mask instead of the vertex angle of the control gate, and the problems that due to the fact that the etching process window of the first side wall is small, the third side wall is broken at the vertex angle of the control gate, and the top end of the third side wall is exposed after a word line polycrystalline silicon layer is ground and etched back are solved. Short circuit between the control gate and the word line is avoided, and device failure is further avoided.

The present invention provides a molded body in which fracturing occurs less readily at a burring structure part, said fracturing starting from surface damage of a root part of the burring structure part.　A molded body (1) according to the present invention is a steel molded body having a burring structure part (2) and a plate-like part (3) extending around the burring structure part (2), characterized in that the burring structure part (2) has a hole part (21) and a wall part (22) provided around the hole part (21) and having a leading edge part (22a) and a root part (22b), the root part (22b) has a plurality of band-like Mn segregation parts arranged at intervals in the thickness direction of the root part (22b) and extending in the surface direction of the root part (22b), the average spacing, in the thickness direction, of the band-like Mn segregation parts at a 1t / 4 position of the thickness t of the root part (22b) is between 4.0 μm and 20.0 μm, inclusive, and the Mn segregation strength of the band-like Mn segregation parts is between 2.00% and 3.50% by mass, inclusive.

The invention relates to the technical field of lasers, in particular to a preparation method of a low-power-consumption mid-infrared quantum cascade laser, and the method comprises the steps: providing an epitaxial wafer which comprises an initial lower waveguide layer, an active layer and an initial upper waveguide layer which are stacked in sequence; patterning processing is carried out on the epitaxial wafer with partial thickness to form a substrate and an initial ridge-shaped structure located on the substrate, a groove is formed in the side face of the initial ridge-shaped structure, and the initial ridge-shaped structure comprises a lower waveguide layer, an initial active region and an upper waveguide layer which are sequentially stacked in the direction away from the substrate; the initial active region is transversely etched through the groove so as to remove the initial active region with a part of width, the remaining initial active region serves as an active region, the width of the upper waveguide layer and the width of the lower waveguide layer are both larger than the width of the active region, and the lower waveguide layer, the active region and the upper waveguide layer form a ridge-shaped structure. According to the invention, the preparation difficulty of the quantum cascade laser with the narrow ridge is at least reduced, and a narrower active region can be prepared.

The invention relates to the technical field of wafer processing, in particular to a wafer stacking structure forming method and a wafer stacking structure. The forming method comprises the following steps: sequentially stacking N wafers to form a wafer stacking structure; the stacking of any ith wafer from the bottom to the top and the (i-1) th wafer comprises the following steps: trimming the partial thickness of the ith wafer inwards from the edge, so that the trimmed ith wafer forms a boss structure, the boss structure comprises a base body part and a boss part, and the horizontal size of the base body part is larger than that of the boss part; enabling the boss part to face the surface of the (i-1) th wafer, and forming a stacked intermediate with a tower-shaped structure with the (i-1) th wafer; the stacked intermediate is thinned, and the whole thickness of the base body part is removed; and repeating the steps until the (i = N) th wafer is stacked. According to the forming method, the tower-shaped structure instead of a columnar structure is finally formed, so that a large effective area of the wafer is saved, and the loss of the effective area of the wafer is reduced.

A semiconductor structure and a method of forming the same, the method comprising: providing a substrate including a substrate and a fin material layer; etching a partial thickness of the fin material layer to form an initial fin, and the etching has a first etch rate ratio; etching a remaining fin material layer exposed by the initial fin to form a fin standing on the substrate, the fin including a bottom fin, a first portion fin and a second portion fin from bottom to top, the second portion fin and the first portion fin constituting an effective fin, and the etching the partial thickness of the fin material layer exposed by the initial fin has a second etch rate ratio, the second etch rate ratio is less than the first etch rate ratio, for making a bottom line width of the first portion fin less than a top line width of the first portion fin; forming an isolation layer covering a sidewall of the bottom fin and exposing the effective fin. The present application reduces leakage current and reduces the impact on the on-current, thereby improving the on-off current ratio of the transistor.

The invention provides a semiconductor device and a manufacturing method thereof. The method comprises the following steps: providing a substrate, forming an oxide layer and a nitride layer on the substrate, etching the nitride layer, the oxide layer and a part of thickness of the substrate to form a shallow trench, and forming an isolation material layer which fills the shallow trench and covers the nitride layer; planarizing the isolation material layer to the remaining isolation material layer of partial thickness on the nitride layer; removing the residual isolation material layer on the nitride layer and the nitride layer to enable the upper surface of the oxide layer to be flush with the upper surface of the isolation material layer in the shallow trench; and removing the oxide layer and the isolation material layer flush with the oxide layer in the shallow trench to form a shallow trench isolation structure. According to the method, a flat surface is formed after the nitride layer is removed, and when the oxide layer is removed later, the flat surface can prevent the edge of the isolation material layer in the shallow trench from being subjected to transition etching, so that an edge groove is prevented from being formed at the top edge of the shallow trench isolation structure, and the performance of a device is improved.

The present disclosure provides a condom that includes an elongated tube defined by an outer wall that includes an elastomeric material. The elongated tube may have a closed end and an open end. The elongated tube may have a tip portion that extends a distance from the closed end toward the open end and a shaft portion that extends from the open end to the tip portion. The outer wall in the tip portion has a tip portion thickness, and the outer wall in the shaft portion has a shaft portion thickness. A ratio of the tip portion thickness to the shaft portion thickness (T / S) is about 1.5 or greater.

A filter forming method, comprising: after forming a first mask layer covering initial electrode fingers in an edge region, removing a partial thickness of the initial interdigital electrode on the side of the first mask layer, forming a bus bar of a bus region, and electrode fingers of a center region and the edge region, and forming a piston structure on the top of the electrode fingers at the intersection of the first mask layer and the electrode fingers in the edge region; since the first mask layer covers the initial electrode fingers in the edge region, and the projection of the first mask layer on the substrate intersects with the projection of the initial electrode fingers on the substrate, that is, the edge of the first mask layer is self-aligned with the sidewall of the initial electrode fingers in the edge region, therefore, the sidewall of the piston structure is aligned with the sidewall of the electrode fingers, which is beneficial to improve the morphology quality of the interdigital electrode, and the alignment accuracy of the electrode fingers and the piston structure, thereby improving the function of the filter in suppressing spurs.

The utility model discloses a nursing special rehabilitation seat cushion after operation relates to rehabilitation seat cushion technical field, including bottom plate, the top fixedly connected with soft pad of bottom plate, the both sides in soft pad are all embedded with water box, and one side wall of two water boxes all is fixedly connected with water pipe, and fixedly connected with a plurality of arc conduits between two water pipes, and one side wall of one water box is installed with micro water pump, the utility model discloses nursing special rehabilitation seat cushion after operation, through setting bottom plate and soft pad, and the partial thickness of soft pad is thicker, can reduce the extrusion of hip when sitting with the help of soft pad, to reduce the extrusion of wound when sitting, the arc backrest of quick assembly that can be equipped is formed with the support to the back of user, reduces the extrusion of wound when sitting and the physical strength that needs when sitting personally, and the heating sheet that is equipped with on arc backrest can heat hot compress to waist and sacrum of user when leaning, and the eight acupoints of waist and sacrum are hot compressed, can promote the blood circulation of waist.