The invention discloses an array substrate manufacturing method. According to the method, in the active layer forming process, photoresist of partial thickness on the corresponding position of a channel region between the source drain electrodes above the active layer is reserved; then a source leakage metal layer is formed, and the source drain electrodes are further formed; finally the photoresist of partial thickness on the channel region between the source drain electrodes is stripped. According to the array substrate manufacturing method, when the semiconducting film is formed, partial photoresist is reserved on the TFT channel region through the semi-permeable mask process, damage to the metal oxide layer in the source leakage electrode etching process is avoided, the photoresist is stripped in the later stripping process, a traditional etching blocking layer can be replaced, the processes of film forming and masking for etching the blocking layer are omitted, production cost is reduced, the process is simplified, and product yield and product benefits are improved.