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Method of depositing films on aluminum alloys and films made by the method

a technology of aluminum alloy and film, applied in the direction of liquid/solution decomposition chemical coating, surface reaction electrolytic coating, coating, etc., can solve the problems of metal or alloy electroless deposition, metal or alloy capacitance typically degrades, and adverse effects on electrodeposition or electroless deposition, so as to increase the nucleation of discrete metallic nanoparticles thereon

Inactive Publication Date: 2006-11-16
STC UNM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0010] In an illustrative embodiment of the invention, the etching step is conducted to leave a partial thickness of the barrier oxide to increase nucleation of discrete metallic nanoparticles thereon. This embodiment of the present invention provides an aluminum alloy substrate having a partial thickness of the barrier oxide on the surface and a porous, three dimensional film structure of electrically interconnected, discrete metallic metal nanoparticles deposited by galvanic or elect...

Problems solved by technology

This oxidation creates a dielectric film of native aluminum oxide, which has an adverse effect on electrodeposition or electroless deposition of metals or alloys such as Ni, Ag, Au, and Cu and their alloys.
First, capacitance of these materials typically degrades at frequencies higher than 10 Hz.
The second limitation arises from problematic incorporation of these capacitors into technologically relevant materials such as silicon.

Method used

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  • Method of depositing films on aluminum alloys and films made by the method
  • Method of depositing films on aluminum alloys and films made by the method
  • Method of depositing films on aluminum alloys and films made by the method

Examples

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example 1

Galvanic Displacement Type Deposition

[0036] In particular, aluminum-copper alloy film covered wafers used in this Example were fabricated as follows: First, a 600-nm layer of SiO2 was thermally grown by steam oxidation of each silicon wafer. Second, a 3 -μ m thick layer Al-Cu alloy (99.5 weight % aluminum and 0.5 weight % copper) was deposited on the layer of Sio2 by physical vapor deposition (PVD). Third, each wafer having the Al-Cu alloy layer was anodized in an electrochemical cell at 50 V dc for 20 min in 3% by weight oxalic acid aqueous solution at 0° C. The electrical contact was made to the top metallic layer outside the electrochemical cell. The steady state current density, established after 5 minutes of anodization, was approximately 1.4 mA / cm . Preliminary experiments revealed that the entire 3 μ m thick metallic layer was anodized in approximately 80-85 min. Thus, anodization for 20 min consumed about 0.75 μ m of the metallic layer. Following anodization, the porous and...

example 2

[0055] In particular, aluminum-copper alloy covered wafers used in this Example were fabricated as follows: First, silicon wafers with a 600 nm thick layer of SiO2 overlayed with a 3 μ m thick layer of 99.5 wt % Al and 0.5 wt % Cu (deposited by physical vapor deposition) were used in all experiments. The Al-Cu alloy layer was anodized with a Pt mesh counter electrode at 50 V DC for 20 min in 3 wt % H2C2O4 acid and at 0° C. The electrical contact was made to the top metallic layer outside the electrochemical cell. After anodization, the porous and barrier layers of aluminum oxide were etched in a mixture of 0.4 M H3PO4 and 0.2 M H2CrO4 acids at 50 ° C. for approximately 90 minutes to remove the outer porous aluminum oxide and partially remove the thickness of the barrier aluminum oxide. Upon completion of etching the specific capacitance of barrier aluminum oxide was determined to be 5.8 μ F / cm2. Assuming that the dielectric constant was 8.6, the layer of barrier aluminum oxide remai...

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Abstract

Method for depositing a metallic material on an aluminum alloy surface for galvanic displacement type deposition, electrodeposition or electroless deposition of a metallic film on the surface wherein the alloy surface is oxidized (e.g. anodized) to form aluminum oxide and the oxidized surface is etched to leave a partial thickness of a barier aluminum oxide on the alloy surface. The partial thickness of the barrier oxide is controlled by etching to form a porous, metallic particulate film for a thin barrier oxide, or a continuous metallic film for thicker barrier oxide. The metallic film then is electrodeposited or electroless deposited on the barrier film.

Description

[0001] This application is a continuation-in-part of U.S. Ser. No.11 / 201,766 filed Aug. 11, 2005, and claims benefits and priority of provisional application Serial No. 60 / 663,659 filed Mar. 21, 2005.FIELD OF THE INVENTION [0002] The invention relates to galvanic displacement type deposition, electroless deposition or electrodeposition of metallic films on treated aluminum alloys as well as to the deposited metallic films and components, such as capacitor electrodes, embodying the metallic films. BACKGROUND OF THE INVENTION [0003] The surface of aluminum metal is spontaneously oxidized in the ambient atmosphere. This oxidation creates a dielectric film of native aluminum oxide, which has an adverse effect on electrodeposition or electroless deposition of metals or alloys such as Ni, Ag, Au, and Cu and their alloys. [0004] With respect to overcoming the problem of electrodeposition, the zincate process has been employed in industry for the deposition of adhesive metallic films on alu...

Claims

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Application Information

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IPC IPC(8): C25D5/34
CPCC23C18/1844C23C18/42C25D15/00C25D11/18C23C18/54
Inventor BREVNOV, DMITRI A.OLSON, TIM S.
Owner STC UNM
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