Semiconductor device and forming method thereof

Abstract

The invention provides a semiconductor device and a forming method thereof, and the method comprises the following steps: providing a substrate, and forming a first sub-fin part after removing a partof fin parts in thickness on the substrate; adjusting the end, away from the substrate, of the first sub-fin part to enable S1 to be greater than or equal to S2, wherein S1 is the distance from the middle area of the end face of one end of the first sub-fin part to the substrate, and S2 is the distance from the edge area of the end face of the first sub-fin part to the substrate, and in a cross section formed perpendicular to the length direction of the first sub-fin part, the contour line of one side, far away from the substrate, of the first sub-fin part is in smooth transition. The semiconductor device is manufactured through the forming method of the semiconductor device. The distance from the middle area of the end face of one end of the first sub-fin part to the substrate is greaterthan or equal to the distance from the edge area of the first sub-fin part to the substrate, the contour line of the side, away from the substrate, of the first sub-fin part is in smooth transition, the probability that the bottom area of the first sub-fin part is broken down by voltage can be reduced, and therefore the performance of the semiconductor device is optimized.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor device and a forming method thereof. Background technique [0002] With the development of integrated circuits to ultra-large-scale integrated circuits, the circuit density inside the integrated circuit is increasing, and the number of components contained in the integrated circuit is also increasing, and the size of the components is also reduced. In order to further reduce the size of semiconductor devices, fin field effect transistors have been developed. The fin field effect transistor is a three-dimensional structure, and one or more protruding fins are formed on the fin field effect transistor, insulating isolation parts are arranged between the fins, and the gate spans the fins and covers the top and side walls of the fins . [0003] LDMOS (Laterally Diffused Metal Oxide Semiconductor) is an important part of FinFET (Fin Field Effect Transistor), i...

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide a semiconductor device and its forming method, which solves the problem that the uniformity and shape of the surface of the fin cannot be well controlled when manufacturing the semiconductor device in the prior art

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