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Method for manufacturing high-voltage electrolytic capacitor

A manufacturing method, high-voltage electrolysis technology, applied in the direction of electrolytic capacitors, capacitors, capacitor dielectric layers, etc., can solve the problems of reduced dielectric oxide film withstand voltage performance, affecting the uniformity and compactness of dielectric oxide film, etc., to ensure the withstand voltage Performance, the effect of reducing the chance of being broken down

Active Publication Date: 2013-11-20
CHINA ZHENHUA GRP XINYUN ELECTRONICS COMP ANDDEV CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the conductivity of the solution is too high, it will affect the uniformity and compactness of the dielectric oxide film, resulting in a decrease in the withstand voltage of the dielectric oxide film

Method used

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  • Method for manufacturing high-voltage electrolytic capacitor

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Effect test

Embodiment 1

[0026] A kind of manufacture method of high-voltage electrolytic capacitor, it comprises the following steps:

[0027] (1) Carry out the molding and sintering of the valve metal anode block, press molding a tantalum block with a size of 3.1×1.0×4.3 (mm), sintering at high temperature and vacuum to volatilize the binder and effectively bond the tantalum powder, the sintering ratio Capacity is 37,000CV / g;

[0028] (2) Clean the formed anode block;

[0029] (3) Prepare an electrolyte solution with a conductivity of 10mS / cm, and then heat the electrolyte solution;

[0030] (4) Initial coating: Put the anode block in the electrolyte at 75°C, turn on the power supply to meet the rated voltage of 245V, and the initial current density is 0.5mA / g, then increase the voltage at a constant current until the oxide film formation voltage reaches the set value at the same time Constant value, every time the voltage increases by 5V, the current density doubles, and the temperature of the el...

Embodiment 2

[0053] A kind of manufacture method of high-voltage electrolytic capacitor, it comprises the following steps:

[0054] (1) Forming and sintering valve metal anode blocks;

[0055] (2) Clean the formed anode block;

[0056] (3) Prepare an electrolyte solution with a conductivity of 0.3mS / cm, and then heat the electrolyte solution;

[0057] (4) Initial coating: put the anode block in the electrolyte at 45°C, turn on the power supply to meet the rated voltage, the initial current density is 0.1A / g, and then boost the voltage at a constant current until the oxide film formation voltage reaches the set value at the same time value, that is, start constant pressure drop and keep the temperature of the electrolyte constant until a uniform and dense dielectric oxide film is formed on the surface of the anode block, and the constant pressure time is 1.5 hours;

[0058] (5) Cleaning and heat treatment of dielectric oxide film after electrochemical formation;

[0059] (6) Secondary co...

Embodiment 3

[0066] A kind of manufacture method of high-voltage electrolytic capacitor, it comprises the following steps:

[0067] (1) Forming and sintering valve metal anode blocks;

[0068] (2) Clean the formed anode block;

[0069] (3) Prepare an electrolyte solution with a conductivity of 65mS / cm, and then heat the electrolyte solution;

[0070] (4) Initial coating: put the anode block in the electrolyte at 85°C, turn on the power supply to meet the rated voltage, the initial current density is 50mA / g, and then boost the voltage at a constant current until the oxide film formation voltage reaches the set value at the same time , that is, start constant pressure drop and keep the temperature of the electrolyte constant until a uniform and dense dielectric oxide film is formed on the surface of the anode block, and the constant pressure time is 10 hours;

[0071] (5) Cleaning and heat treatment of dielectric oxide film after electrochemical formation;

[0072] (6) Secondary coating: ...

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Abstract

The invention discloses a method for manufacturing a high-voltage electrolytic capacitor. The method comprises the following steps: forming and sintering a valve metal anode block; cleaning the formed anode block; preparing an electrolyte; performing primary film coating; electrochemically forming, and cleaning and thermally treating a medium oxide film; performing secondary film coating; removing residual impurities on the surface of medium oxide film; coating a cathode electrolyte; coating a graphite layer and a silver paste layer on a tantalum core surface coated with the electrolyte in sequence; performing spot welding, bonding, assembling, die pressing and packaging; and shaping to obtain a finished product, and testing the electric performance of the product. The method has the beneficial effects that the temperature of the electrolyte and the current density are changed, and the medium oxide film is formed on the surface of anode block via an electrochemical oxidization method under the condition of relatively constant conductivity, so that the voltage resistance of the product is ensured, and the probability of break-through of the capacitor is effectively lowered.

Description

technical field [0001] The invention relates to a method for manufacturing a high-voltage electrolytic capacitor, belonging to the technical field of electrolytic capacitor manufacturing. Background technique [0002] With the rapid development of modern electronic complete systems, the performance indicators of components in the fields of aviation, aerospace, communications and microelectronics are also getting higher and higher. Electrolytic capacitors are one of the important components of electronic technology, especially tantalum electrolytic capacitors occupy an important position in the capacitor industry due to their advantages of volume efficiency, high reliability and good stability. How to produce high-quality products to meet the requirements of the development of modern electronic equipment is one of the urgent problems to be solved in the tantalum capacitor manufacturing industry. A large number of failure analysis data and DPA analysis data show that tantalum...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G9/00H01G9/07C25D11/26
CPCY02E60/13
Inventor 田东斌张选红冯建华刘健陈德舜沈伟
Owner CHINA ZHENHUA GRP XINYUN ELECTRONICS COMP ANDDEV CO LTD
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