The invention discloses an
anodic oxidation method for improving the uniformity of a
dielectric layer of a
capacitor. The
anodic oxidation method comprises the following steps that a
tantalum block is pretreated and then placed in an electrolytic bath; adding
electrolyte into the electrolytic bath, and performing oscillation circulation through an oscillator; a
tantalum block is sequentially subjected to a pre-oxidation procedure, a main oxidation procedure, a stabilization procedure, heat treatment and constant-pressure treatment, the
tantalum block is taken out
after treatment is finished, and the tantalum block is cleaned and dried to finish
anodic oxidation. The ultrasonic oscillator is additionally arranged in the electrolytic bath, so that the
electrolyte concentration gradient can be eliminated, and the thickness uniformity of the
dielectric layer is improved. And by adding
ammonium dihydrogen
phosphate, micropores are filled, the surface of the tantalum block is passivated, and the performance of a
capacitor prepared from the tantalum block is improved. Through a staged dynamic oxidation method and a
composite electrolyte formula, the uniformity and reliability of a
tantalum oxide dielectric layer are remarkably improved, and the method is suitable for industrial production of a high-reliability
tantalum capacitor.