125results about "Capacitor dielectric layers" patented technology

A solid electrolytic capacitor includes: a capacitor element including an anode part and a cathode part; a substrate that supports the capacitor element; a sealing body that seals the capacitor element; a first external electrode electrically connected to the anode part; a second external electrode electrically connected to the cathode part; and an adhesive layer disposed between the capacitor element and a first surface of the substrate. At an interface between the first surface and the adhesive layer, a maximum height Rz1 of surface roughness of the first surface is 5 μm or more, and a maximum height Rz2 of surface roughness of the adhesive layer is 3 μm or more.

The invention provides a tantalum capacitor dielectric layer gradient oxidation preparation method and an oxidation film and an anode block thereof, and the method employs a multi-stage gradient boost rate to carry out electrochemical oxidation on a tantalum anode, and controls the boost rate and the oxidation voltage at different stages. And the oxide film forms a grain size gradient structure from the compact layer at the bottom to the nanocrystalline layer at the top, and the film thickness is 400-900 nm. Meanwhile, an electrolyte formula is optimized, ammonium dihydrogen phosphate and cerous nitrate are added into a phosphoric acid solution, the compactness of the film is improved, and oxygen vacancies are inhibited; ozone bubbling treatment is introduced in the constant-pressure stage, and the defect concentration is further reduced. The prepared dielectric layer has high breakdown voltage, low leakage current and high specific capacitance performance, the reliability of the tantalum capacitor is remarkably improved, the service life of the tantalum capacitor is remarkably prolonged, and the dielectric layer is suitable for high-reliability electronic equipment.

To provide a solid electrolytic capacitor having high reliability and high productivity by maintaining high airtightness while maintaining excellent electrical characteristics and a manufacturing method of the same.SOLUTION: A solid electrolytic capacitor comprises: a capacitor element 1 which has an anode body 2, a dielectric oxide covering layer 3 covering the anode body 2, and a cathode body 6 formed on the dielectric oxide covering layer 3 so as to be insulated from the anode body 2; an exterior body 10 which covers the capacitor element 1; a contact layer 11 which is formed in an anode terminal part 9 being an end of the anode body 2 and has a surface 11S with prescribed surface roughness; and an anode side electrode layer (12) which covers the surface 11S.SELECTED DRAWING: Figure 2

A method for manufacturing a capacitor member according to the present disclosure includes forming, on a valve metal, a modified layer containing a metal other than the valve metal by a cathodic reaction. In this manufacturing method, εH / KH [V / nm] > εL / KL [V / nm] is satisfied. εH is the dielectric constant of oxide of the metal other than the valve metal. KH [nm / V] is the thickness of the first oxide film of the metal per 1 V of anode potential when the first oxide film is formed by anodic oxidation. εL is the dielectric constant of the oxide of the valve metal. KL [nm / V] is the thickness of the second oxide film including the oxide of the valve metal per 1 V of anode potential when the second oxide film is formed by anodic oxidation.

This invention provides a solid electrolytic capacitor that can achieve high capacitance. [Solution] The solid electrolytic capacitor comprises a capacitor element containing a conductive polymer. The capacitor element comprises an anode, a first dielectric layer containing a first dielectric (excluding a composite oxide of titanium and aluminum) covering at least a portion of the surface of the anode, a second dielectric layer containing a second dielectric covering at least a portion of the surface of the first dielectric layer, and the conductive polymer covering at least a portion of the surface of the second dielectric layer. The second dielectric is an oxide containing at least one element selected from the group consisting of silicon, aluminum, and zinc. The dielectric constant D1 of the first dielectric is higher than the dielectric constant D2 of the second dielectric. The thickness T2 of the second dielectric layer is 0.003T1 or more and 0.170T1 or less with respect to the thickness T1 of the first dielectric layer.

A capacitor capable of exhibiting good electrical properties under a wide variety of conditions is provided. The capacitor comprises a capacitor element consisting of a sintered porous anode body, a dielectric material covering the anode body, and a solid electrolyte containing a conductive polymer, also covering the dielectric. The capacitor also includes multiple anode conduction sections extending from the ends of the capacitor element. Furthermore, the capacitor includes a housing that defines an internal cavity in which the capacitor element is arranged and hermetically sealed.

The invention discloses an aluminum electrolytic capacitor composite oxide film suitable for a hydrogen fuel cell and a preparation method, and belongs to the technical field of aluminum electrolytic capacitors. The preparation method comprises the following steps: sequentially carrying out surface cleaning, neutralization, formation and activation pretreatment on a high-purity aluminum foil to prepare a surface-activated Al2O3 base film; the preparation method comprises the following steps: selecting tetrabutyl titanate as a titanium source, mixing a solvent, a chelating agent and a hydrolytic agent according to a preset molar ratio, stirring, modifying with a coupling agent, and performing ultrasonic dispersion to prepare TiO2 sol; coating the TiO2 sol on the surface of the Al2O3 base film by adopting a dip-coating process to form a wet film; and the wet film is converted into an anatase type TiO2 coating through segmented sintering, and the Al2O3-TiO2 composite oxide film is obtained. The composite oxide film comprises an Al2O3 base film and an anatase type TiO2 coating which are sequentially compounded, and the interface is tightly combined without gaps. Through material compounding and process optimization, the composite oxide film has the characteristics of low dielectric loss, high breakdown voltage, high humidity resistance and vibration resistance, adapts to the harsh working condition of a hydrogen fuel cell, and improves the service life and stability of a capacitor.

An electrode foil for an electrolytic capacitor comprises a substrate containing a valve-acting metal and a dissimilar metal composite layer covering the surface of the substrate. The dissimilar metal composite layer includes a mixed region containing a first metal and a second metal different from the first metal. The mixed region constitutes at least 50% of the thickness of the dissimilar metal composite layer. The mixed region is used to achieve a content of at least 1 atom% for both the first metal (M1) and the second metal (M2) relative to the total metal content.

The present invention provides a thin-film capacitor capable of arranging a pair of terminal electrodes on the same side. The thin-film capacitor (1) comprises: a metal foil (10) having a roughened upper surface (11); a dielectric film (D) covering the upper surface (11) of the metal foil (10) and having an opening that partially exposes the metal foil (10); a first electrode layer connected to the metal foil (10) via the opening; and a second electrode layer connected to the dielectric film (D) but not connected to the metal foil (10). Thus, both the first and second electrode layers can be arranged on the upper surface (11) of the metal foil (10). Moreover, since the metal foil (10) is roughened, a larger capacitance can be obtained.

A capacitor element that has an anode body, a dielectric oxide film layer covering the anode body, and a cathode body formed on the dielectric oxide film layer; an exterior body that covers the capacitor element; a contact layer that is on an anode terminal, which is an end portion of the anode body, and has a surface with a predetermined surface roughness; and an anode-side electrode layer that covers the surface are provided.

The present invention provides a thin-film capacitor with high adhesion to a circuit board. The thin-film capacitor (1) comprises: a metal foil (10) having a roughened upper surface (11); a dielectric film (D) covering the upper surface (11) of the metal foil (10) and having an opening that partially exposes the metal foil (10); a first electrode layer connected to the metal foil (10) via the opening; and a second electrode layer connected to the dielectric film (D) but not connected to the metal foil (10). The angle θa formed by another main surface (12) and the side surface (13) of the metal foil (10) is greater than 20° and less than 80°. Thus, the angle of the side surface (13) is a conical shape greater than 20° and less than 80°, thereby suppressing warping and improving adhesion to the multilayer substrate when embedded in the multilayer substrate.

Various embodiments of an electrical component and a method of forming such component are disclosed. The electrical component includes a substrate having a first major surface, a second major surface, and a cavity disposed in the substrate. The cavity extends between the first major surface and the second major surface. The electrical component also includes an anode electrode that includes a conductive foil layer disposed on the second major surface of the substrate and over the cavity. Tantalum material is disposed within the cavity and includes tantalum particles. A dielectric layer is disposed on the tantalum particles, and an electrolyte cathode layer is disposed on the dielectric layer. The electrical component also includes a cathode electrode disposed over the cavity.

A capacitor 1a includes tantalum metal 20 and a dielectric layer 10. The dielectric layer 10 covers the tantalum metal and contains tantalum oxide. The dielectric layer 10 contains fluorine and phosphorus. The dielectric layer 10 includes, for example, a first portion 11 and a second portion 12. The first portion 11 is separate from the tantalum metal 20 in the thickness direction of the dielectric layer 10. The second portion 12 is in contact with the tantalum metal 20 in the thickness direction of the dielectric layer 10.

This capacitor 1a comprises a metal tantalum 10, a conductor 20, and a tantalum oxide film 30. The tantalum oxide film 30 is disposed in contact with the metal tantalum 10, and is disposed between the metal tantalum 10 and the conductor 20. The tantalum oxide film 30 includes a first part 31 and a second part 32 containing fluorine. The second part 32 exists at a position closer to the metal tantalum 10 than the first part 31 in the thickness direction of the tantalum oxide film 30. Additionally, the concentration of fluorine in the second part 32 is lower than the concentration of fluorine in the first part 31.

A method includes forming a metal cathode on a substrate, anodizing an outer surface of the metal cathode to form an anodized porous layer, and forming a metal anode over the anodized porous layer, wherein the anodized porous layer defines a dielectric layer between the metal anode and the metal cathode, and wherein the metal anode, the anodized porous layer, and the metal cathode define a sensor.

A capacitor 1a is provided with a tantalum metal 10, a conductor 20, and a tantalum oxide film 30. And a tantalum oxide film (30) that is in contact with the tantalum metal (10) and is disposed between the tantalum metal (10) and the conductor (20). The tantalum oxide film 30 includes a first site 31 and a second site 32. The first site 31 contains fluorine. The second portion 32 is located closer to the metal tantalum 10 than the first portion 31 in the thickness direction of the tantalum oxide film 30. In the tantalum oxide film (30), the concentration of fluorine in the second region (32) is lower than the concentration of fluorine in the first region (31). The ratio (d1 / d0) of the thickness (d1) of the first portion to the thickness (d0) of the tantalum oxide film (30) is greater than 0.4 and 0.8 or less.

A solid electrolytic capacitor having a thickness of about 1,000 µm or less is provided. The capacitor comprises a capacitor element comprising an anode component comprising a porous anode body disposed on a surface of an anode substrate. The anode substrate is formed from a valve metal composition and the porous anode body is formed from a sintered powder containing a valve metal composition and having a thickness of about 650 µm or less. The capacitor element further comprises a cathode coating disposed over a dielectric and the porous anode body. The cathode coating comprises a solid electrolyte containing conductive polymer particles, wherein at least a region of the anode substrate is free of the cathode coating. An anode termination is electrically connected to the region of the anode substrate that is free of the cathode coating, and a cathode termination is electrically connected to the cathode coating.

A dielectric 10 includes a complex oxide. The complex oxide is amorphous and has a composition represented by CexAl1–xOk. In said composition represented by CexAl1–xOk, the condition 0.400≤x<0.90 is satisfied, and k is a value that preserves the electroneutrality of the complex oxide.

This solid electrolytic capacitor comprises a capacitor element including a conductive polymer. The capacitor element comprises: a positive electrode body; a first dielectric layer that includes a first dielectric covering at least a portion of the surface of the positive electrode body; a second dielectric layer that includes a second dielectric covering at least a portion of the surface of the first dielectric layer; and the conductive polymer that covers at least a portion of the surface of the second dielectric layer. The first dielectric is an oxide other than a composite oxide of titanium and aluminum. The second dielectric is an oxide including at least one element selected from the group consisting of silicon, aluminum, and zinc. When the dielectric constant of the first dielectric is D1 and the dielectric constant of the second dielectric is D2, D1 is higher than D2. A thickness of the first dielectric layer is T1, and T2 is 0.003 T1 to 0.170 T1.

The utility model discloses a low temperature resistant aluminum electrolytic capacitor, which relates to the technical field of electrolytic capacitors, and comprises an aluminum shell, a core arranged in the aluminum shell and a cover plate arranged at an opening of the aluminum shell and used for sealing the opening, a sleeve is arranged outside the aluminum shell, a low temperature resistant cavity is arranged between the aluminum shell and the sleeve, and the low temperature resistant cavity is arranged in the aluminum shell. The low-temperature-resistant cavity is filled with an aluminum oxide ceramic layer, one side of the cover plate is fixedly connected with an insulating plate, the insulating plate is provided with a ventilation channel, and one end of the ventilation channel is arranged on one side of the cover plate. According to the utility model, the low-temperature-resistant cavity is arranged between the aluminum shell and the sleeve, the aluminum oxide ceramic layer is filled in the low-temperature-resistant cavity, and the aluminum oxide ceramic layer has good low-temperature performance, so that the electrolytic capacitor can still maintain good performance in a low-temperature environment; the insulating property between the capacitor and the circuit board can be effectively improved, and the risk of short circuit between the capacitor and the circuit board is reduced.

A method of producing a capacitor electrode includes forming an oxide layer on a foil. The method also includes heating the foil to a target temperature so as to induce defects in the oxide layer. The target temperature is about 450 °C to 560 °C and the duration of heating the foil to the target temperature is less than 4 minutes. The oxide layer is reformed so as to generate a reformed oxide layer that is an aluminum oxide with a boehmite phase and a pseudo-boehmite phase.

Provided is an improved method for forming a solid electrolytic capacitor. The method includes forming a first dielectric oxide on a tantalum anode by applying a first formation electrolyte on the anode;forming a second dielectric oxide on the first dielectric oxide by applying a second formation electrolyte on the anode;wherein at least one of the first formation electrolyte or the second formation electrolyte comprises a derivative of inositol as defined by Formula 1:Wherein each of R1-R6 is defined.

A solid electrolytic capacitor according to one embodiment of the present disclosure may include a stacked body having a plurality of stacked solid electrolytic capacitor elements being stacked, a first side electrode arranged on a first side surface of the stacked body, and a second side electrode arranged on a second side surface of the stacked body. Each of the solid electrolytic capacitor elements may include an anode electrode layer, a dielectric layer, a cathode electrode layer, a solid electrolyte layer, and an insulating region arranged on the anode electrode layer and adjacent to a side of the solid electrolyte layer. The first distance between the anode electrode layer and the second side electrode may be smaller than the second distance between the insulating region and the second side electrode.

A capacitor includes metallic tantalum, a solid electrolyte, and a tantalum oxide film. The tantalum oxide film is disposed between the metallic tantalum and the solid electrolyte. A first portion includes fluorine. A second portion is in contact with the first portion, the second portion being closer to the solid electrolyte than the first portion in a thickness direction of the tantalum oxide film. A fluorine concentration in the second portion is lower than a fluorine concentration in the first portion.

A tantalum capacitor according to an embodiment of the present disclosure includes: a tantalum body; a tantalum wire connected to the tantalum body; a conductive polymer layer disposed on the tantalum body; and a first reinforcement layer disposed on the conductive polymer layer and including iron (Fe) doped carbon nanotubes.

An electrolytic capacitor includes a porous anode body, a dielectric layer formed on a surface of the anode body, and a conductive polymer and a salt compound that are filled inside pores of the anode body. L is a shortest distance from a center of the anode body to a first principal surface of the anode body, the first principal surface being closest to the center, and a region in which a minimum value of respective distances to principal surfaces of the anode body is L / 3 or less, and a region in which the minimum value is 2L / 3 or more, are defined as a surface layer part and a central part, respectively, inside the anode body. A ratio B / A of an ion strength B derived from the salt compound to a sum A of all ion strengths measured by time-of-flight secondary ion mass spectrometry (TOF-SIMS) in a cross section that passes through the center and that is perpendicular to the first principal surface is defined as an ion strength ratio. A ratio R2 / R1 of an ion strength ratio R2 in the central part of the anode body to an ion strength ratio R1 in the surface layer part of the anode body is 0.15 or more.

A new species of capacitive mass energy storage system employing eutectic liquid metallic materials and 2D / 2.5D electrode structures to achieve energy densities capable of replacing battery chemistries as well as petrochemical fuels. The system utilizes metallic bonding principles and submicron-scale electrode separation to sequester high electrical and ionic charge values. Operating at substantially higher voltages than conventional capacitors, the system employs synergistic charge storage mechanisms, and specialized fabrication techniques including capillary printing. Simulations show that the technology provides high energy density simultaneous with rapid charging and near instant discharging capabilities, configurable power output in DC or AC forms, and thermal stability at elevated temperatures. Applications include electric vehicles, autonomous robotics, and medical devices, among others.

Disclosed is an electrolytic capacitor (100) including a capacitor element (10). The capacitor element (10) includes a positive electrode, a dielectric layer formed on a surface of the positive electrode, a negative electrode, and an electrolyte layer and a separator that are arranged between the dielectric layer and the negative electrode. The electrolyte layer includes a non-aqueous solvent, electrically conductive particles, and an electrically conductive polymer. The amount of electrically conductive particles present in a dielectric-layer-side first portion of the electrolyte layer differs from the amount of electrically conductive particles present in a negative-electrode-side second portion of the electrolyte layer.

A capacitor (1a) is provided with a tantalum metal (10), a solid electrolyte (20), and a tantalum oxide film (30). The tantalum oxide film (30) is disposed between the metal tantalum (10) and the solid electrolyte (20). The first site 31 contains fluorine. The second portion 32 is in contact with the first portion 31 at a position closer to the solid electrolyte 20 than the first portion 31 in the thickness direction of the tantalum oxide film 30. The concentration of fluorine in the second site 32 is lower than the concentration of fluorine in the first site 31.

This electrode foil for electrolytic capacitors contains a valve action metal and is provided with a core part and a porous part continuous with the core part. The porous part has a thickness of Τ μm and has an inner layer region on the core part side and a surface layer region on the side opposite from the core part. The surface layer region is a region in which the distance from the outer surface of the porous part is T / 4 or less, and the inner layer region is a region in which the distance from the boundary of the porous part with the core part is T / 4 or less. The average diameter D1 nm of pores in the surface layer region is smaller than the average diameter D2 nm of pores in the inner layer region.