272results about How to "Good high frequency characteristics" patented technology

The invention discloses a microwave film resistor and a manufacturing method thereof, and belongs to the field of circuit elements. The microwave film resistor comprises a ceramic substrate, a film resistance layer which is adhered to the upper surface of the ceramic substrate and an electrode layer which is adhered to the film resistance layer. The film resistor has the advantages of high precision, high using frequency and high resistance stability. In addition, the invention also discloses a microwave film resistor network module and a manufacturing method thereof, wherein the microwave film resistor network module is formed by integrating three or more microwave film resistors on one module.

The present invention relates to the assembling technique. According to the present invention, the present invention details the aligning and detecting techniques for placing precision of the improved components during assembling. Specifically, The present invention includes a method and a structure that are applied in all detection technologies to check and improve the position accuracy of the elements on the target platform by combining the elements with the aligning marks and the referential signs on the target platform. The sensor with a plurality of sensor probes can check the excursion of the excursion component when in assembling.

The invention discloses a low-temperature sintered high-permeability NiCuZn ferrite material for a wire wound chip inductor and a preparation method of the ferrite material. The ferrite material comprises the following main components based on oxide content: 40.5 to 49.6 moles percent of Fe2O3, 30 to 47 moles percent of ZnO, 5 to 20 moles percent of CuO and the balance of NiO. The preparation method comprises the following steps of: (1) mixing raw materials, (2) performing primary sanding, (3) performing primary spray drying and granulation, (4) pre-sintering, (5) adding trace elements, (6) performing secondary sanding, (7) performing secondary spray drying and granulation, (8) molding and (9) sintering. By adding auxiliary components such as NaCO3, B2O3, Ta2O5 and the like, the sintering temperature is greatly reduced, the sintering temperature is below 900 DEG C, the high-frequency electromagnetic performance of the material is greatly improved, the sintering density of the material is improved, the mechanical strength of the material is improved, and the manufacturing process requirement of the wire wound chip inductor is met; and on the other hand, energy is saved, and the producing and manufacturing costs are greatly reduced. The initial permeability of the material is 2,850; the specific loss coefficient of the material is less than 5.5*10<-6> under the test conditions of 100 kHz and 0.25mT; and the specific loss coefficient of the material is less than 25.6*10<-6> under the test conditions of 500 kHz and 0.25mT.

The invention relates to a parallel-resistance feedback differential low-noise amplifier, which comprises a main amplification circuit. The main amplification circuit comprises a first MOS (metal oxide semiconductor) tube, a second MOS tube, a third MOS tube and a fourth MOS tube, a grid end of the first MOS tube is connected with a first differential input end through a first input matching network, the second MOS tube is connected with a second differential input end through a second input matching network, a drain end of the first MOS tube M1 is connected with the grid end of the first MOS tube through a first parallel-resistance feedback branch, and a drain end of the second MOS tube is connected with a grid end of the second MOS tube through a second parallel-resistance feedback branch; the first parallel-resistance feedback branch comprises a first resistor and a first capacitor connected with the first resistor in series; and the second parallel-resistance feedback branch comprises a second resistor and a second capacitor connected with the second resistor in series. The parasitic capacitance of the output end of the amplifier can be reduced, the isolation between the output end and the input end of the amplifier can be improved, good high-frequency characteristics can be achieved, and the circuit stability can be enhanced.

The invention relates to a current sensor array used for measuring three-phase current and a measuring method thereof, and belongs to the technical field of sensing measurement. The device comprises three-phase current carrying leads, an operating platform, N sensing chips, a signal transmission line, a signal conditioning circuit, an analog-to-digital conversion device and a data processing device. The current sensor array formed by the three-phase current carrying leads and the N sensing chips is fixed on the operating platform in measurement. The three-phase current carrying leads are equal in distance. The N sensing chips are arranged according to different distance to the three-phase current carrying leads. Each sensing chip is connected with the signal conditioning circuit through the signal transmission line. The signal conditioning circuit, the analog-to-digital conversion device and the data processing device are connected in turn. The data processing device performs numerical processing on output data so as to obtain the current values of the three-phase current carrying leads. The current sensor array used for measuring three-phase current is large in measuring range, high in precision, low in cost, easy to prepare, safe and reliable, convenient to install and maintain without invasion and suitable for mass application.

The invention relates to a parallel optical emission assembly based on a 45-degree fiber array and a manufacturing method thereof. The parallel optical emission assembly comprises the 45-degree fiber array with an MT connector, a ceramic substrate and a VCSEL laser device array, wherein an electrode and a bonding pad are arranged on the ceramic substrate, the VCSEL laser device array is fixedly bonded on the electrode of the ceramic substrate, a bonding pad of a chip of the VCSEL laser device array is connected with the bonding pad of the ceramic substrate in a gold wire bonding mode, the 45-degree optical reflection surface of the 45-degree fiber array with the MT connector is in one-to-one aligned coupling with the VCSEL laser device array, and the 45-degree fiber array with the MT connector is fixed on the ceramic substrate. During usage, a user only needs to bond the ceramic substrate on a printed circuit board (PCB) of the user, driving signals of the VCSEL laser device array are connected with the bonding pad on the ceramic substrate in a routing mode, high-speed signals can demodulate and drive the VCSEL laser device array, parallel electric signals can be converted into parallel optical signals, and the parallel optical signals can be output to the standard MT connector through direct coupling of the 45-degree fiber array to be connected with the outside.

There is provided a connector used for connection between a printed circuit board and a device or between printed circuit boards such as between a computer, a server, or a backboard-package and in particular a high-speed transmission connector for transmitting a high-frequency electric signal. The high-speed transmission connector (1) includes a plurality of signal terminals and an insulation housing having a plurality of containing holes for containing the signal terminals arranged in right-left direction in multiple stages arranged in vertical direction. In one containing hole (2c), a paired terminal (4, 4) for transmitting one electric signal is contained in such a manner that the terminals are located near to each other in the right-left direction. This increases the high-speed transmission characteristic and reduces the number of parts required.

The invention discloses a high-magnetic-inductance high-frequency iron-based nanocrystalline soft magnetic alloy and a preparation method thereof. The molecular formula of the iron-based nanocrystalline soft magnetic alloy is FeaSibBcPdNbeVfMogCuh, the a, the b, the c, the d, the e, the f, the g and the h in the molecular formula correspondingly represent the atomic percentage contents of all thecorresponding alloy elements, and satisfy the following conditions that the a is greater than or equal to 75.5 and less than or equal to 77.5, the b is greater than or equal to 8.5 and less than or equal to 13.5, the c is greater than or equal to 7 and less than or equal to 10, the d is greater than or equal to 0.2 and less than or equal to 1, the e is greater than or equal to 1.0 and less than orequal to 1.7, the f is greater than or equal to 0.05 and less than or equal to 0.4, the g is greater than or equal to 0.1 and less than or equal to 1.5, the h is greater than or equal to 0.8 and lessthan or equal to 1.2, and the sum of the a, the b, the c, the d, the e, the f, the g and the h is 100. The high-magnetic-inductance high-frequency iron-based nanocrystalline soft magnetic alloy material has the advantages of excellent comprehensive soft magnetic performance, low cost, high thermal stability and the like, particularly, the high-frequency performance is good, the magnetic conductivity under the condition of 10 kHz can reach 28000 or above, a good application prospect is achieved, and the high-magnetic-inductance high-frequency iron-based nanocrystalline soft magnetic alloy material can be applied to the technical fields of high-frequency transformers, common mode chokes, wireless charging and the like.

The invention provides an axial air gap switch reluctance motor and a preparation method thereof. The axial air gap switch reluctance motor includes stators, rotor iron cores, a motor rotation shaft, a rotor disc and a shell; the motor rotation shaft is fixed in the shell; the rotor disc is assembled on the motor rotation shaft; the rotor iron cores are fixed on the rotor disc; the stators are fixed in the shell; the stators are corresponding to the rotor iron cores; and axial air gaps exist between the stators and the rotor iron cores. The axial air gap switch reluctance motor of the invention is convenient to assemble, and spatial layout and wire winding mode of the axial air gap switch reluctance motor can be flexibly adjusted according to different application conditions, the number of the phases, the size and the power of the motor can be expanded through adjusting the number of the stator iron cores or rotor iron cores, so that the requirements of the use of motors of various kinds of power in various kinds of conditions can be satisfied, and the application range of the axial air gap switch reluctance motor can be extended.

A laminated coil device includes a magnetic part (5) that includes a metallic magnetic material and a first glass component, and a non-magnetic part (6) that includes a ceramic material and a second glass component, and a coil conductor (1) is formed such that at least a main surface of the coil pattern contacts the non-magnetic part (6). The magnetic part (5) is formed such that the volume content of the first glass component in the total of the metallic magnetic material and the first glass component is 46 to 60 volume%. The non-magnetic part (6) is formed such that the volume content of the second glass component in the total of the ceramic material and the second glass component is 69 to 79 volume%. As a result, it is possible to achieve a highly reliable laminated coil device and manufacturing method therefor which can provide good high-frequency characteristics and good magnetic characteristics without impairing insulation, and can reduce the occurrence of structural defects such as cracks or peeling.

The invention discloses a GaAs PIN diode, which comprises: a semi-insulating GaAs underlay for supporting the whole GaAs diode; a high doped layer N growing in extension on the semi-insulating GaAs underlay, resistive formations I and P close to eigen growing in extension in turn on the high doped layer N; By wet process and etching, the areas of the said high doped layer N, resistive formations I and P reduced in turn to form a mesa structure; a top electrode of the round structure formed by metal evaporator on layer P; a semi-orbicular bottom electrode formed by metal evaporator on layer N. The invention also discloses a manufacturing method of GaAs PIN diode. The invention efficiently lowers the parasitic capacitance of the PIN diode without increasing the difficulty of the process and simultaneously greatly shortens the microstrip line connected with the top electrode. The spurious inductance brought by the invention can be greatly reduced or even omitted without using the air-bridge process. The invention has the advantages of easy making, better high frequency characteristic, which is easy to realize the single scale integration.

The invention provides a ceramic packaging structure and a pressure sensitive apparatus shell of the ceramic packaging structure, and relates to a packaging structure of the pressure sensitive apparatus shell, in particular to the pressure sensitive apparatus shell of the ceramic packaging structure. Accordingly, the problem that in the prior art, the pressure sensitive apparatus shell is prone to corrosion and oxidation when used at a high temperature or the pressure sensitive apparatus shell is influenced by thermal mechanical stress is solved. Ceramic is adopted to serve as an insulating material of the ceramic packaging structure, a metallization layer is sintered on the surface of the ceramic at a high temperature, and the metallization layer and a metal shell are sintered through solder, such as nickel or gold or Ag-Cu, serving as a transition material to form a sealing structure. The pressure sensitive apparatus shell comprises a lead, the metallization layer, a seal ring, the solder, a ceramic body, a transition layer and a tube base, wherein the metallization layer is arranged on the junction surface of the ceramic body and the tube base, the ceramic body and the metallization layer are sintered to form a whole under a high temperature, the transition layer is formed between the metallization layer and the tube base through the sintering effect of the solder, and the lead and the surface of an inner hole of the seal ring are sintered to form a whole through the solder.

The invention discloses an IGBT serial-connected composite voltage balancing circuit with grid-side and load-side control. The composite voltage balancing circuit comprises load-side and grid-side control voltage sharing circuits; the load-side voltage sharing circuit is connected in parallel between collectors and emitters of IGBTs, is composed of a resistor, a diode and a capacitor, and realizes static and dynamic voltage balancing in the load side; and the grid clamping voltage sharing circuit is connected in parallel between collectors and grids of IGBTs, is composed of a diode, a capacitor and a resistor, and can realize dynamic voltage balancing of the grids. The composite voltage balancing circuit realizes composite voltage balancing in the load side and the grid side via discrete passive devices, solves the problem of voltage imbalance due to characteristic difference of the devices and asynchronous driving signals in the IGBT switching on/off process, and ensures the working stability of the IGBT serial-connected circuit.

The invention discloses a magnetism, copper and zinc-iron soft magnetic ferrite material and a preparation method thereof. Formula of main components by mole percentage comprises ferric oxide, zinc oxide, magnesium oxide and copper oxide. First assistant components of doping agents comprise one of or mixture of several of components of calcium carbonate or cobalt oxide or silicon dioxide. Second assistant components of the doping agents comprise one of or mixture of any two or three of components of vanadium pentoxide or bismuth oxide or lithium carbonate. The preparation method includes primary ball-milling, presintering, secondary ball-milling, forming and sintering. Then a blank part is placed in a sintering furnace for sintering, four-hour heat preservation at temperature of 1250 DEG C is carried out, and a finished magnetic core is obtained. Technical performance of the magnetism, copper and zinc-iron soft magnetic ferrite material is the same as that of nickel zinc ferrite, and rod-shaped, I-shaped and annular-shaped magnetic cores manufactured by the preparation method have large cost advantages.

The invention discloses an automatic storage battery charging-discharging and capacity detection device which comprises an ARM control unit, a storage battery charging unit and a BUCK step-down circuit drive and constant current output unit. The output end of the ARM control unit is connected with the storage battery charging unit and the BUCK step-down circuit drive and constant current output unit; the ARM control unit is formed by a signal acquisition circuit, an ARM minimum system circuit, a communication control circuit and an upper computer, and the signal acquisition circuit, the ARM minimum system circuit, the communication control circuit and the upper computer are connected in sequence; the storage battery charging unit comprises a charger, a storage battery and a corresponding charging control circuit, the positive electrode of the charger is connected with the power supply positive electrode of the ARM control unit, and power supply to the ARM control unit is achieved; the BUCK step-down circuit drive and constant current output unit comprises an MOS drive circuit, a BUCK step-down circuit and a discharging load resistor. The automatic storage battery charging-discharging and capacity detection device is simple in structure and high in anti-jamming capability and has application and popularization value, and the storage battery is automatically charged and discharged without manual operation.

The invention discloses a device and a method for placing a predetermined element on a target platform, and relates to an assembly technique. According to the device and the method, alignment and detection techniques for improving element placing accuracy in the assembly are described. Particularly, the device and the method include that the placing accuracy of the element on the target platform is detected and improved by combining alignment signs on the element and reference signs on the target platform in various detection techniques. A group of sensors which form an array to form multi-sensor probes can detect the offset of offset elements in the assembly.

The multi-waveband antenna includes tuner, earthing element, circuit shorter and feeding lines. The tuner provides the first resonant mode and the second resonant mode corresponding to the first waveband and the second waveband separately. The earthing element includes the main earthing surface, the first earthing regulator and the second earthing regulator. The main earthing surface includes the first earthing point corresponding to the first resonant mode and the second earthing point corresponding to the second resonant mode, the first earthing regulator is used in regulating impedance matching of the first resonant mode and the bandwidth of the first waveband and the second earthing regulator is used in regulating impedance matching of the second resonant mode and the bandwidth of the second waveband. The circuit shorter has one end connected to the tuner, the other end to the second earthing point and feeding points connected to the feeding lines.

The invention discloses a planar transformer. The planar transformer comprises an upper magnetic core, a lower magnetic core and multiple flat coils arranged between the upper magnetic core and the lower magnetic core. The adjacent flat coils are insulated. Each flat coil is formed by multiple turns of metal conductors coiled into a spiral shape. The flat coils are vertically projected in space and overlapped vertically. Some flat coils form primary windings of the planar transformer, and the other flat coils form secondary windings of the planar transformer. The planar transformer is characterized in that according to the direction from the center to the outer side of each flat coil, the widths of the turns of each flat coil change as the following form: W1:W2:...:Wn=1:a:...:a(n-1), W represents the widths of the coils, n represents the number of turns of the coils and is larger than or equal to 1, a is larger than or equal to 0.5 and smaller than 1 or a is larger than 1 and smaller than or equal to 1.5, and the widths of the turns of each flat coil change consistently. Magnetic field distribution of the transformer can be changed by changing the widths of the turns of each coil, so that coupling performance and the alternating current loss are changed. The planer transformer has the advantage that leakage inductance and alternating current resistance of the planer transformer can be adjusted according to the actual needs.