64results about How to "Reduce microwave-loss" patented technology

High speed printed circuit boards (PCBs) are disclosed comprising a dielectrics systems with the back-side trenches, prepregs, signal lines and ground-plans, wherein the signal line and ground-plan are located on the dielectrics. Using of the open trenches in the substrate help to reduce the microwave loss and dielectric constant and thus increasing the signal carrying speed of the interconnects. Thus, according to the present invention, it is possible to provide a simple high speed PCB using the conventional material and conventional PCB manufacturing which facilitates the design of circuits with controlled bandwidth based on the trench opening in the dielectrics, and affords excellent reliability. According to this present invention, high speed PCB with the interconnect system contains whole portion or portion of interconnects for high speed chips interconnects and that have have the dielectric system with opened trench or slot to reduce the microwave loss.

High-speed interconnect systems for connecting two or more electrical elements are provided. Interconnect system has the means, which could reduce the microwave loss induced due to the dielectrics. Reducing the effective loss tangent of the dielectrics reduces the microwave loss. With optimize design of the interconnects, the speed of the electrical signal can be made to closer to the speed of the light. The interconnect systems consists of the electrical signal line, inhomogeneous dielectric systems and the ground line, wherein inhomogeneous dielectric system consisting of the opened-trenches into the dielectric substrate or comb-shaped dielectrics to reduce the microwave loss. Alternatively dielectric structure can have the structure based on the fully electronic or electromagnetic crystal or quasi crystal with the line defect. Alternatively, dielectric structure can be made to comb-shaped structure with teethes having thickness and space making the air pocket to reduce the microwave loss. The interconnect system, can be made in rigid or flex board for off-chip interconnects for IC packages, connectors and cables, where conventional manufacturing technology can be used and yet to increase the bandwidth of the interconnects.

High speed flex printed circuit boards (FLEX-PCBs) are disclosed comprising a dielectrics systems with the back-side trenches, adhesives, signal lines and ground-plans, wherein the signal line and ground-plan are located on the dielectrics. Using of the open trenches in the substrate help to reduce the microwave loss and dielectric constant and thus increasing the signal carrying speed of the interconnects. Thus, according to the present invention, it is possible to provide a simply constructed high speed FLEX-PCB using the conventional material and conventional FLEX-PCB manufacturing which facilitates the design of circuits with controlled bandwidth based on the trench opening in the dielectrics, and affords excellent connection reliability. As the effective dielectric constant is reduced, the signal width is required to make wider or the dielectric thickness is required to make thinner keeping fixed characteristics impedance. The fundamental techniques disclosed here can also be used for high-speed packaging.

The invention discloses a microwave film resistor and a manufacturing method thereof, and belongs to the field of circuit elements. The microwave film resistor comprises a ceramic substrate, a film resistance layer which is adhered to the upper surface of the ceramic substrate and an electrode layer which is adhered to the film resistance layer. The film resistor has the advantages of high precision, high using frequency and high resistance stability. In addition, the invention also discloses a microwave film resistor network module and a manufacturing method thereof, wherein the microwave film resistor network module is formed by integrating three or more microwave film resistors on one module.

High-speed interconnect systems for connecting two or more electrical elements are provided for on-chip interconnects. The manufacturing process to fabricate the interconnect structure using standard IC process is also provided. The interconnect systems consists of the electrical signal line, inhomogeneous dielectric systems, and with and without ground line, wherein inhomogeneous dielectric system consisting of the opened-trenches into the dielectric substrate or comb-shaped dielectrics to reduce the microwave loss. The signal lines located below and/or above the opened trenches. The opened trenches helps to reduce the microwave-loss induced due to the dielectric material and increases the on-chip interconnects bandwidth. Alternatively, dielectric system can have the structure based on fully electronic or electromagnetic crystal or quasi crystal with the line defect. The interconnect system, can be made in IC for on-chip interconnects using conventional IC manufacturing technology and yet to increase the interconnects-bandwidth.

High-speed interconnect systems for connecting two or more electrical elements for both on-chip and off-chip applications are provided. Interconnect system has the means, which could reduce the microwave loss induced due to the dielectrics. Reducing the effective loss tangent of the dielectrics reduces the microwave loss. With optimize design of the interconnects, the speed of the electrical signal can be made to closer to the speed of the light. The interconnect systems consists of the electrical signal line, inhomogeneous dielectric systems and the ground line, wherein inhomogeneous dielectric system consisting of the opened-trenches into the dielectric substrate or comb-shaped dielectrics to reduce the microwave loss. Alternatively dielectric structure can have the structure based on the fully electronic or electromagnetic crystal or quasi crystal with the line defect. Alternatively, dielectric structure can be made to comb-shaped structure with teethes having thickness and space making the air pocket to reduce the microwave loss. The interconnect system, can be made in rigid or flex board for off-chip interconnects for IC packages, connectors and cables, where conventional manufacturing technology can be used and yet to increase the bandwidth of the interconnects.

The invention discloses an adjustable microwave band-pass filter. A microwave circuit substrate is provided with a double-resonance modal annular resonator and a corresponding input coupling unit, an output coupling unit and a disturbance unit, wherein an even number of micro mechanical bridge films are placed on the resonator in a mirror symmetry mode to adjust a center frequency; and one or more micro mechanical bridge films are placed on the disturbance unit to adjust the bandwidth. The filter uses a variable capacitance effect generated by a capacitance loading structure of the micro machined bridge films to load a dual-mode resonator and a disturbance structure thereof, so that the adjustment of filtering characteristics, such as the passband center frequency, the passband bandwidth and the like can be realized by fewer micro mechanical bridge films and less chip area occupation. Compared with the prior dual-mode filter and the micro mechanical adjustable band-pass filter, the adjustable microwave band-pass filter has the advantages of more flexible structure, lower technology complexity and better device overall performance, and is suitable for filtering devices based on planar transmission lines and on-chip waveguide at the same time.

A preparation method of a NiCuZn ferrite thick film material used for a Ka wave band circulator belongs to the technical field of electronic materials. The preparation method includes the following steps: 1) preparation of main materials: employing the following raw materials: 48.0-49.0 mol% of Fe2O3, 19-21.0 mol% of ZnO, 4.0-5.0 mol% of CuO and 26.0-27.0 mol% of NiO; 2) primary ball milling; 3) pre-burning: pre-burning the materials at 800-1000 DEG C and maintaining the temperature for 1-3 h; 4) doping: adding the following additives: 0.05-0.1 wt% of CaO and 0.05-0.1 wt% of Bi2O3; 5) slurry material ball milling: adding 40-50 wt% of an organic adhesive and 40-50 wt% of anhydrous ethanol to the powder material and performing ball milling for 4-8 h; 6) tape casting: performing tape casting to the slurry material to obtain raw film belts being 50-60 [mu]m; 7) lamination: laminating the raw film belts by 20-22 layers and pressing the laminated raw film belts under 5-7 MPa to obtain a green film body being 100-140 [mu]m in thickness; and 8) sintering: performing temperature-maintained sintering to the green film body at 1020-1080 DEG C for 1-3 h. The ferrite material is high in saturated magnetization intensity (4[pi]Ms), is good in temperature stability, is high in resistivity and is low in microwave loss.

A microwave circuit assembly includes a Liquid Crystalline Polymer (LCP) layer that supports at least one microwave circuit component. First and second ground plane layers form the outer surfaces of the assembly and these are spaced apart at least partially by a gas, a mixture of gases, or a vacuum, from the LCP supporting layer and the at least one microwave circuit.

The invention discloses a manufacturing method of a silicon nitride dielectric layer, a Josephson junction and a superconducting quantum bit. The manufacturing method of the silicon nitride dielectriclayer comprises the steps of depositing a silicon film on a substrate; carrying out nitridation processing on the silicon film to form a first silicon nitride film; and manufacturing a second siliconnitride film on the first silicon nitride film by using a plasma assisted molecular beam epitaxial codeposition method. According to the method, the dielectric layer is manufactured by using the silicon nitride material with a low microwave loss coefficient, so that the microwave loss of the dielectric layer is reduced. Meanwhile, in the superconducting quantum bit of the silicon nitride dielectric layer manufactured based on the method, the silicon nitride material can be adopted to manufacture a protective layer of the superconducting quantum bit, thereby effectively reducing double energylevel defects and magnetic impurities introduced by the surface interface, and being conducive to improving related performance of the Josephson junction and the superconducting quantum bit. In addition, the manufacturing method of the silicon nitride dielectric layer can obtain the high-performance silicon nitride dielectric layer under a technological condition with low requirements, thereby being conducive to mass production.

The invention belongs to the technical field of antennas, and provides a high-frequency micro-strip antenna with a substrate made of high resistance silicon. The high-frequency micro-strip antenna comprises the substrate made of high resistance silicon, right-square-pyramid-frustum-shaped grooves, radiation patches, feeder lines of the radiation patches and a ground lug, wherein the right-square-pyramid-frustum-shaped grooves are formed in the bottom of the substrate, and the radiation patches are arranged on the upper surface of the substrate and provided with degeneration units. Due to the fact that air slots in the reverse side of the substrate made of high resistance silicon are designed into the right-square-pyramid-frustum-shaped grooves, MEMS wet etching can be adopted, the conical surfaces of the right-square-pyramid-frustum-shaped grooves are automatically etched into conical surfaces of which the angle is the same as the material crystal orientation interfacial angle, a waste masking layer cannot be generated, and the etching speed and flatness of the top surfaces of the grooves are respectively increased by about 10 times and 20 times of the etching speed and flatness in the background technology. The high-frequency micro-strip antenna has the advantages that the structural design of the antenna is advanced, the production process is easy and convenient to conduct, production efficiency is high, the yield is high, microwave losses are low, radiation efficiency is high, the performance of the antenna is excellent, the antenna is easily integrated to form an array type micro-strip antenna, production cost is low, and the requirements for large-scale production can be met.

The invention discloses a coplanar stripline traveling wave electrode and a silicon-based Mach-Zehnder modulator, the coplanar stripline traveling wave electrode is provided with a broadband transition structure of a coplanar waveguide coplanar stripline, and the coplanar stripline traveling wave electrode comprises a first ground wire, a signal wire and a second ground wire; a first earth pole access end, a signal access end, a second earth pole access end, a first transition section, a second transition section and a field dissipation transition section form a transition structure of a coplanar waveguide coplanar stripline; the first earth pole access end, the signal access end and the second earth pole access end form a coplanar waveguide structure; and by utilizing the coplanar stripline traveling wave electrode structure, single-ended push-pull driving can be realized by virtue of one group of traveling wave electrodes, the electrode area is reduced, the modulator is suitable forintegration of a plurality of modulators, and the integration level is improved.

The invention belongs to the field of manufacturing of microwave dielectric materials, and in particular relates to a ceramic-polymer composite microwave material as well as a preparation method and an application method thereof. The composite microwave material consists of a ceramic phase and a polymer phase, wherein the polymer phase is used as a matrix material, and the microwave dielectric ceramic phase is used as a filling material which is wrapped by a wrapping material for microwave dielectric ceramics to form a microwave dielectric ceramic phase and then is filled into the polymer phase to obtain the ceramic-polymer composite microwave material; the volume content of the microwave dielectric ceramic phase is 0-50%, and the volume content of the polymer phase is 50-100%. The preparation method of the composite material comprises the following steps: firstly, performing surface modification on ceramic powder by using an organic substance or coupling agent, then wrapping the ceramic powder by using a small amount of polymer, and finally, processing by adopting an extrusion molding process. Under the condition that the microwave frequency is about 10GHz, the dielectric constant of the composite material is 3-13 and the dielectric loss is 0.0003-0.001, so that the ceramic-polymer composite microwave material can be applied to microwave devices such as micro-strip antenna, microwave substrates and the like.

The invention discloses a preparation method of rectangular cross section heterologous metal composite wire. It assemblies the metal core rob which surface is treated in coated metal tube and installs it on the positioning device of bottom, blocks the top of coated metal pipes and metal core rob with top positioning device, the gap between inner wall of coated metal pipe and metal core rob is 0.5mm - 2.5mm; puts the coated metal pipe and metal core rob in cylindrical annular tube, setting explosives and electric detonator between the coated metal pipe and cylindrical annular tube uniformly; detonates electric detonator and realizes the explosive recombination of two metal of coated metal pipe and metal core rob in a moment; heat treats the combination rob which is connected and combined by explosion, plastically rotating forges and draws at temperature of 350 DEG C-950DEG C, then prepares the needed round cross section heterologous metal composite wire; rolls the round cross section heterologous metal composite wire into rectangular cross section heterologous metal composite wire. The invention is a method of simple production processes, high production yield and productivity, reducing the manufacturing cost significantly.

According to a symmetric MEMS directional microwave power coupler with an online self-detection function, the signal lines of the two sections of ACPS transmission lines are symmetrically distributedat the upper side and the lower side of a main transmission line, and the length of each section of ACPS transmission line is a quarter wavelength, so that a symmetrical directional coupler is formed.The incident microwave power is respectively coupled to the third coupling end port and the fifth coupling end port by utilizing the symmetrical directional coupler, so that the symmetric MEMS directional microwave power coupler has the output microwave power of two coupling ends, and the dual-port coupling output is realized. Four connection nodes of a CPW transmission line and an ACPS transmission line of the symmetric directional coupler are respectively provided with four capacitive MEMS microwave power sensors, and the capacitive MEMS microwave power sensors are used for measuring the microwave power transmitted by each port of two branches, thereby achieving an online self-detection function. In addition, by adopting a full-passive structure, the symmetric MEMS directional microwavepower coupler has the characteristics of zero direct-current power consumption, compatibility with a gallium arsenide monolithic microwave integrated circuit process and the like.

The invention provides a dual-channel self-detection MEMS microwave power divider and a preparation method thereof. The dual-channel self-detection MEMS microwave power divider comprises a microwave power divider located on a gallium arsenide substrate, a thermoelectric MEMS microwave power sensor and three capacitive MEMS microwave power sensors. The microwave power divider is of a T-shaped symmetrical structure and comprises three ports, and an ACPS signal line is arranged in the middle of the microwave power divider. The thermoelectric MEMS microwave power sensor is located in an annular area formed by the ACPS signal line. Each capacitive MEMS microwave power sensor is connected with one of the ports through a CPW structure. By the capacitive MEMS microwave power sensors and the thermoelectric MEMS microwave power sensor, whether two ports of the MEMS microwave power divider are equally divided into microwave power or not or whether mismatch occurs or not can be detected on line inreal time through the capacitive channel and the thermoelectric channel; and the ratio of the microwave power at the input port to the microwave power at the output port is measured on line, so thatthe real-time on-line power self-detection of the MEMS microwave power divider is realized.

The invention discloses an MEMS microwave standing wave meter based on thermoelectric and capacitive dual-channel online detection, which is characterized in that signal lines of an ACPS transmissionline are symmetrically placed at two ends of a main transmission line to serve as auxiliary transmission lines so as to form a symmetrical directional coupler; the symmetrical directional coupler extracts incident microwave power and reflected microwave power to the coupling end and the isolation end of an upper branch and a lower branch respectively; a thermoelectric MEMS microwave power sensor and a capacitive MEMS microwave power sensor are placed on the upper branch and the lower branch respectively, the microwave power of the coupling end and the isolation end of the upper branch and thelower branch is measured, and then the standing-wave ratio is obtained. The thermoelectric MEMS microwave power sensor is suitable for measuring small microwave power, and the capacitive MEMS microwave power sensor is suitable for measuring large microwave power, so that a larger measurement dynamic range of the microwave standing wave meter can be obtained by adopting the two sensors to perform measurement at the same time. The MEMS microwave standing wave meter has the characteristics of low loss, small chip area and compatibility with a gallium arsenide monolithic microwave integrated circuit process.

The invention provides a composite ceramic gyromagnetic nonlinear transmission line. The whole composite ceramic gyromagnetic nonlinear transmission line is of a multi-layer coaxial cylindrical structure, is sequentially provided with a coaxial inner conductor, a ferrite magnetic ring layer, an insulating medium layer, a coaxial outer conductor, a coil and an oil gas charging nozzle from the axis to the outside, and further comprises an inner ceramic layer laid on the outer wall of the coaxial inner conductor and/or an outer ceramic layer laid on the inner wall of the coaxial outer conductor. According to the composite ceramic gyromagnetic nonlinear transmission line provided by the invention, the inner ceramic layer and the outer ceramic layer are respectively laid on the outer side of the coaxial inner conductor and the inner side of the coaxial outer conductor, so that the structure of the gyromagnetic nonlinear transmission line is optimized, and the insulating strength between the coaxial inner conductor and the coaxial outer conductor is enhanced, and therefore, broadband electromagnetic pulses with higher power can be output; and the technical defect that local breakdown easily occurs between the inner conductor and the outer conductor of the gyromagnetic nonlinear transmission line in the prior art, so that the improvement of the power capacity of the gyromagnetic nonlinear transmission line is restricted is effectively overcome.

The invention discloses a state-controllable symmetric thermoelectric MEMS microwave standing wave meter, which is characterized in that a symmetric directional coupler is adopted to extract incidentmicrowave power and reflected microwave power to a coupling end and an isolation end of an upper branch and a lower branch respectively; a thermoelectric MEMS microwave power sensor is adopted to measure the power of each port of the two branches, more accurate incident microwave power and reflected microwave power can be obtained by averaging, and then the standing-wave ratio can be obtained. Thedesigned two branches can work independently to realize a measurement function, so that the failure rate is reduced; in order to realize a state switching function of the MEMS microwave standing wavemeter, an MEMS microwave switch is additionally arranged on an extraction branch of the MEMS microwave standing wave meter; and when the MEMS microwave switch is in an off state, the incident microwave power is not extracted any more and is directly transmitted to an output port, so that the loss of the microwave power when detection is not needed is reduced. The state-controllable symmetric thermoelectric MEMS microwave standing wave meter improves the reliability of the MEMS microwave standing wave meter, and has the characteristics of low loss, small chip area and compatibility with a gallium arsenide monolithic microwave integrated circuit process.