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Epitaxial growing lanthanum aluminate film material on silicon substrate and preparation method

A technology of epitaxial growth and thin film materials, which is applied in the directions of single crystal growth, crystal growth, single crystal growth, etc., can solve the problems of uneven interface reaction layer and oxide film, achieve a wide range of applications and application value, and the process is simple and low , low cost effect

Inactive Publication Date: 2006-01-25
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In order to epitaxially grow oxide materials on silicon substrates, after a lot of efforts, although there are still problems such as the interface reaction layer between oxide and silicon and the unevenness of oxide films, people have used different methods to epitaxially grow oxide materials on silicon substrates. SrTiO 3 (such as document 1, The interface of epitaxial SrtiO 3 on silicon: in situ and ex situ studies, Xiaoming Hu et al., Appl. Phys. Lett., Vol.82, No.2, 203(2003). And literature 2, Epitaxial oxode thin films on Si(001), Z .Yu et al., J.Vac.Sci.Technol.B, VOl.18, No.4, 2139 (2000)); There are also people who grow ZrO epitaxially on silicon substrates 2 , such as literature 3, Epitaxial Y-stabilized ZrO 2 films on silicon: Dynamic growth process and interface structure, S.J.Wang et al., Appl.Phys.Lett., Vol.80, No.14, 2541 (2002); so far, no one has directly epitaxially grown lanthanum aluminate on a silicon substrate

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  • Epitaxial growing lanthanum aluminate film material on silicon substrate and preparation method
  • Epitaxial growing lanthanum aluminate film material on silicon substrate and preparation method
  • Epitaxial growing lanthanum aluminate film material on silicon substrate and preparation method

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Embodiment 1

[0036] Use conventional laser molecular beam epitaxy equipment to epitaxially grow 500nm thick LaAlO on n-type silicon wafers 3 Thin film, the present invention is described in detail below in conjunction with preparation method:

[0037] The LaAlO of this embodiment 3 The specific preparation process of the film is:

[0038] 1. Choose a no-clean 2-inch single-side polished n-type single crystal Si substrate;

[0039] 2. Use single crystal LaAlO 3 make target;

[0040] 3. After rinsing in 1% hydrofluoric acid washing solution for 10 seconds, directly put the silicon wafer into the epitaxial chamber;

[0041] 4. Vacuum the epitaxial chamber to 2×10 -5 Pa, ~5 cell layers (~150 laser pulses) of LaAlO sputtered on a Si substrate using an excimer laser with an output energy of 250 mJ 3 thin film, the temperature of the silicon wafer was raised to 620°C in 10 minutes, and the LaAlO 3 The crystallization of the film, after the RHEED diffraction fringes appear (such as figure...

Embodiment 2

[0046] Make according to embodiment 1, prepare the LaAlO of 400nm 3 film. The difference from Example 1 is that a high-temperature sintered lanthanum aluminate target is used instead of a single crystal lanthanum aluminate target, a p-type silicon substrate is selected, and 3×10 -1 Pa reactive oxygen species to prepare 400nm LaAlO 3 film.

[0047] figure 2 For the epitaxial growth of 400nm thick LaAlO on p-type Si substrate 3 RHEED diffraction fringes of thin films, sharp and clear diffraction fringes, indicating the epitaxial growth of LaAlO on p-type Si substrate 3 The film not only has good crystallinity, but also has a smooth surface.

Embodiment 3

[0049] With conventional laser molecular beam epitaxy equipment, the LaAlO 3 The thin film is used as a buffer layer, and 800nm ​​thick La is epitaxially grown on the n-type silicon wafer 0.7 Sr 0.3 MnO 3 film.

[0050] Using laser molecular beam epitaxy, select a no-clean 4-inch single-side polished n-type single crystal Si substrate, rinse it in 1% hydrofluoric acid for 20 seconds, and then directly put the silicon wafer into the epitaxial chamber, put the epitaxial chamber Vacuum down to 2 x 10 -5 Pa, LaAlO sputtered with ~10 cell layers (~300 laser pulses) on Si substrate 3 thin film, the temperature of the silicon wafer was raised to 680°C in 10 minutes, and LaAlO was observed with RHEED 3 The crystallization of the film, after the RHFFD diffraction fringes appear (such as figure 1 shown), the LaAlO 3 Thin film is used as a buffer layer, and La 0.7 Sr 0.3 MnO 3 The target starts continuous laser sputtering epitaxial growth with a pulsed laser frequency of 2 Hz ...

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Abstract

This invention relates to a method for epitaxial growing LaAlO3 film material and its preparation method, which takes type n or p silicon chip as the substrate to epitaxial grow a La a AlO film material layer on it directly. The preparation method includes: taking out cleaned silicon chip from hydrofluoric acid solution directly and putting it into the sample-feeding chamber or epitaxial chamber of an epitaxial device, applying two steps for the epitaxial growth: growing LaAlO3 material directly on the silicon substrate or taking LaALo3 grown on the silicon plate as the buffer layer then to grow YBCO, BaTiO3, LaMnO3, SrTiO3 and its doped BaTiO3, LaMnO3, SrTiO3 CaTi oxide films and multi-layer film.

Description

technical field [0001] The invention relates to an epitaxial growth thin film material and a preparation method, in particular to a lanthanum aluminate thin film material and a preparation method for epitaxial growth on a silicon substrate. Background technique [0002] Lanthanum aluminate (LaAlO 3 ) lattice structure with BaTiO 3 , SrTiO 3 , LaMnO 3 Many perovskite oxides such as YBCO and YBCO are relatively matched, so they are widely used as substrates for preparing perovskite oxide films, especially lanthanum aluminate has very small microwave loss, and is considered to be the best choice for YBCO superconducting films. One of the good substrates. But on the one hand, the size of lanthanum aluminate single crystal is currently limited, and the price is relatively expensive, especially the lanthanum aluminate single crystal substrate has many domain structures, which greatly affects the quality of the prepared thin film. The lanthanum aluminate film has no domain str...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/08C30B25/00C30B29/24
Inventor 吕惠宾何萌相文峰黄延红陈正豪周岳亮程波林金奎娟杨国桢
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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