Ultraviolet light detector with titanium dioxide nanotube array serving as matrix and preparation method thereof

A nanotube array and titanium dioxide technology, which is applied in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problem that the UV-visible suppression ratio cannot be improved, the time response performance of the detector is deteriorated, and the dark current of the detector is large, etc. problem, to achieve the effect of high UV-visible suppression ratio, good time response performance and simple structure

Inactive Publication Date: 2013-01-02
HEFEI UNIV OF TECH
View PDF5 Cites 27 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the film grown by this sol-gel method has many unavoidable holes, serious stoichiometric ratio mismatch, and obvious oxygen vacancies, which eventually lead to a large dark cu

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ultraviolet light detector with titanium dioxide nanotube array serving as matrix and preparation method thereof
  • Ultraviolet light detector with titanium dioxide nanotube array serving as matrix and preparation method thereof
  • Ultraviolet light detector with titanium dioxide nanotube array serving as matrix and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] In this embodiment, the ultraviolet light detector based on the titanium dioxide nanotube array is composed of a titanium sheet substrate 1, a titanium dioxide nanotube array 2, an insulating layer 3 and a graphene film 4 from bottom to top, The lower surface of the titanium sheet substrate 1 and the upper surface of the graphene film 4 are respectively provided with extraction electrodes 5, and the extraction electrodes 5 are connected by a current measuring device 6;

[0031]The insulating layer 3 is a PET film with a frame-shaped hollow structure, the graphene film 4 is in contact with the insulating layer 3, and the graphene film 4 forms a Schottky contact with the titanium dioxide nanotube array 2;

[0032] The extraction electrode 5 is a silver electrode, and the extraction electrode 5 forms an ohmic contact with the graphene film 4 , and the extraction electrode 5 forms an ohmic contact with the titanium substrate 1 .

[0033] The specific preparation method is a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses an ultraviolet light detector with a titanium dioxide nanotube array serving as a matrix and a preparation method thereof. The ultraviolet light detector comprises a titanium sheet substrate (1), the titanium dioxide nanotube array (2), an insulating layer (3) and a graphene film (4) sequentially from bottom to top, extraction electrodes (5) are arranged on the lower surface of the titanium sheet substrate (1) and the upper surface of the graphene film (4) respectively and are connected with a current measurer (6). The titanium dioxide nanotube array is prepared on the titanium sheet substrate by an anodizing method, oxygen vacancy of the array prepared by the method is less, and mismatch of stoichiometric ratio is avoided. Therefore, titanium dioxide is good in crystalline structure after annealing to lead to high response, low dark current and high ultraviolet-to-visible rejection ratio.

Description

1. Technical field [0001] The invention relates to the field of semiconductor photoelectric detection, and relates to a preparation method of a novel ultraviolet light detector. Specifically, a Schottky diode optoelectronic device that responds significantly to ultraviolet light. This equipment is sensitive to ultraviolet light and can be widely used in astronomy, environmental monitoring, spectroscopic and medical monitoring instruments, etc. 2. Background technology [0002] Ultraviolet detection technology has become another important photoelectric detection technology concerned by countries all over the world after infrared and laser detection technology, and has broad application prospects in scientific research, military, civil and many industrial fields. At present, the widely used ultraviolet detectors are mainly silicon-based ultraviolet photocells and photomultiplier tubes. Their technology is mature and their sensitivity is high. Filtering and other shortcomings...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L31/108H01L31/18
CPCY02P70/50
Inventor 罗林保王铭正曾龙辉吕鹏聂彪
Owner HEFEI UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap