13 results about "Photoconductivity" patented technology

The invention provides a terahertz echo wall mode waveguide on a light control chip, which comprises an echo wall mode micro-ring, a straight waveguide and a conical coupling waveguide which are integrated on the same substrate, and a solid-state laser source positioned above the micro-ring. And the conductivity and the inherent loss of the high-resistance silicon micro-ring are dynamically changed through the photon-generated carrier effect, so that switching of an echo wall mode among an over-coupling state, a critical coupling state and an under-coupling state is accurately and continuously regulated and controlled. According to the invention, based on an active regulation and control mechanism of a photoconductive effect, large-depth and high-speed dynamic control of terahertz signal transmission amplitude and phase can be realized, the bottleneck of low integration level and limited modulation performance of an existing terahertz regulation and control device is solved, and a key technical scheme is provided for realizing a high-performance on-chip terahertz switch, an attenuator and a modulator.

A dual-mode asymmetric P-I-N perovskite radiation detector and its fabrication method are disclosed, belonging to the field of radiation detector technology. The method first involves preparing a perovskite single-crystal precursor solution. A small amount of this solution is used for seed crystal growth at a constant temperature, with the seed crystal serving as the seed for CsPbBr3 single-crystal growth on a P-type substrate. Next, a MAPbBr3 solution is prepared, and MAPbBr3 single crystals are grown to form the I layer. Finally, MAPbBr3 (Bi) is prepared... 3+ A doped solution was used to grow MAPbBr3 (Bi) as the N-layer. 3+ A dual-mode asymmetric P-I-N perovskite radiation detector is obtained by fabricating top and bottom electrodes using a doped single crystal. This invention utilizes the forward conduction and reverse cutoff characteristics of the P-I-N structure. When a negative voltage is applied to the N layer for forward bias, X-rays incident on the P layer are used for radiation detection, exciting the photoconductivity gain and achieving a sensitivity far exceeding that of CsPbBr3 single crystals; simultaneously, MAPbBr3 (Bi 3+ The doped single crystal has a natural shielding effect on soft X-rays, enabling high-sensitivity detection of hard X-rays in the I layer when X-rays are incident on the N layer with positive pressure and reverse P-I-N bias.

The invention relates to a method for optimizing carrier separation based on ion irradiation induced positive / negative photoconduction, which comprises the following steps: uniformly irradiating a single crystal sample by using an Xe35 + ion beam with the energy of 500-520MeV at room temperature, and controlling the dosage range of the ion beam to be 4.0 * 10 < 11 > cm <-2 >-3.0 * 10 < 12 > cm <-2 >. Defects with specific concentrations and types are accurately introduced into r-TiO2 crystal lattices, so that the on-demand design of the photoelectric property of the material is realized. A brand-new material preparation approach and a device prototype are provided for developing a new generation of sensing and computing integrated artificial vision sensor, a low-power-consumption neuromorphic computing chip and the like.

The invention discloses a position-sensitive Te nanowire photoelectric detector and a preparation method and application thereof, and belongs to the technical field of photoelectric detection and neuromorphic calculation. The invention discloses a suspended Te nanowire to minimize parasitic interference of a substrate so as to improve the collection efficiency of photon-generated carriers, and also can realize rapid thermal isolation to accurately control the temperature gradient so as to realize the photoelectric response of a wide spectrum at 1310-1650nm under a zero offset value. The position-adjustable positive and negative photoconductive characteristics generated by the Seebeck effect are utilized to show the calculation application of the device in the sensing under the zero offset value, 85% of accuracy is realized in the image identification application, and the problems that the calculation power consumption in the traditional sensing is large, the device separation degree is poor, the application in the communication wave band is difficult to realize and the like are solved. The device provides a thought for developing a low-power-consumption visual sensing system under wide spectrum response.

This invention discloses a solid-phase ligand exchange film formation method based on CuInSeS quantum dots. The method involves dispersing long-chain ligand-terminated CuInSeS quantum dots in a dispersion solvent to prepare a CuInSeS quantum dot solution with a predetermined quantum dot concentration. The quantum dot solution is then coated onto a target substrate surface and annealed at a first annealing temperature to obtain an initial CuInSeS quantum dot film. A short-chain ligand solution is then coated onto the initial CuInSeS quantum dot film, and solid-phase ligand exchange is performed to exchange the long-chain ligands on the initial CuInSeS quantum dot film with the short-chain ligands in the short-chain ligand solution, resulting in a ligand-exchanged initial CuInSeS quantum dot film. Finally, the ligand-exchanged initial CuInSeS quantum dot film is annealed at a second annealing temperature to form a target CuInSeS quantum dot film on the target substrate surface. This invention can improve photoconductivity gain, avoid film breakage, reduce trapped states, and improve film uniformity.

This invention belongs to the fields of semiconductor thin film material growth technology and optoelectronic device technology, and discloses a gallium oxide epitaxial structure based on an n-plane sapphire substrate and its application in the fabrication of optoelectronic semiconductor devices or device arrays. The gallium oxide epitaxial structure includes a substrate and a Ga2O3 layer on the substrate. The substrate is the sapphire layer, which is a (11-23) oriented single-crystal sapphire, i.e., n-plane sapphire. The dual-mode device fabricated based on this gallium oxide epitaxial structure can achieve reversible functional switching under different bias voltages: it exhibits high sensitivity and fast response photodetector performance under low bias voltage; and it displays a significant and continuous photoconductivity effect under high bias voltage, which can be used to simulate the synaptic characteristics of brain-like neurons. This invention features a simple structural design and controllable process, enabling the simultaneous realization of high-performance ultraviolet photodetector and synaptic neural network functions in a single device, effectively improving the device's integration and application flexibility, and is suitable for fields such as ultraviolet imaging, optical communication, and intelligent sensing.

This invention belongs to the field of semiconductor device technology, specifically relating to a method for fabricating amorphous gallium oxide photoelectric synaptic devices at room temperature and their applications. Amorphous gallium oxide channels are formed on a gate insulating dielectric layer using room temperature sputtering. By controlling the magnetron sputtering power, the amorphous gallium oxide layer is given an oxygen vacancy concentration suitable for generating continuous photoconductivity and synaptic response. The device generates postsynaptic currents under 254nm ultraviolet pulse irradiation, which can be used for simulating ultraviolet irradiation skin damage perception and pain sensitization. It can also convert sound data into cochlear images and further into postsynaptic current characteristics for snoring recognition. This solution combines room temperature fabrication, low power consumption, complete photoelectric synaptic functionality, and information processing capabilities for medical and health monitoring.

The invention discloses a gallium oxide / zinc oxide-based multi-mode photoelectric synapse device and a preparation method and application thereof in neuromorphic calculation, and the gallium oxide / zinc oxide-based multi-mode photoelectric synapse device is prepared through asymmetric contact engineering of contact between a metal layer / Ga2O3 Schottky junction and a Ga2O3 / ZnO heterojunction and a defect-mediated photoconductive effect. The invention relates to a planar two-end type photoelectric artificial synapse device which can respond to both a signal (6V, 6V) and a deep ultraviolet (255 nm) optical signal. The obtained device has a remarkable photoelectric synaptic synapse characteristic, overcomes the limitation that the previous multi-mode Ga2O3-based photoelectric synapse depends on a complex three-terminal device, and provides a compact and efficient platform for multi-mode neuromorphic calculation and intelligent sensing. The device can be used as a physical reserve pool, and time sequence coding electric / optical pulses are mapped into high-dimensional conductivity dynamic characteristics; event-driven image edge extraction can also be realized under the control of pre-voltage and bias voltage, and the application potential of the method in the aspect of constructing a low-power-consumption neuromorphic sensing calculation system is shown.

The invention belongs to the technical field of semiconductor photoelectric integration, and discloses a preparation method of a three-dimensional graphene film photoelectric detector, a three-dimensional graphene film keeps the characteristics of zero band gap and high light absorption of graphene, has the characteristic of wide spectrum absorption, and can realize effective absorption from ultraviolet to infrared to microwave bands. The three-dimensional graphene thin film has a rough surface and a three-dimensional porous internal structure, the utilization rate of light can be greatly improved, efficient migration of carriers can be achieved through construction of a three-dimensional network, oxygen defects existing in a system can promote separation of photo-generated electron hole pairs and limit photo-generated holes, and therefore the obvious optical gain effect is generated, and the photoelectric conversion efficiency is improved. The photoconductive effect is enhanced, and larger photocurrent is obtained.

This application discloses a deep ultraviolet (DUV) photodetector, its fabrication method, and its application. The DUV photodetector includes a substrate, a gallium oxide layer of a first conductivity type, and a transparent conductive layer of a second conductivity type; at least a selected area on the surface of the substrate is formed of a metallic material; the gallium oxide layer is disposed at least in the selected area on the surface of the substrate and forms an ohmic contact or a Schottky contact with the metallic material; the transparent conductive layer is disposed on the gallium oxide layer and forms a pn junction with the gallium oxide layer. The DUV photodetector of this application has advantages such as a high detection area ratio, high photoconductivity gain, fast response speed, high responsivity, and small size for easy integration. Furthermore, the fabrication process is simple and the manufacturing cost is low, which can well meet the needs of large-scale production.

The application discloses a kind of based on heterostructure energy band engineering regulation and control negative photoconductive device, belong to optoelectronic device and semiconductor hetero integration field, including substrate, wide band gap photosensitive material layer, narrow band gap two-dimensional channel material layer, electrode;Two material layers contact and form heterojunction and pass energy band structure and Fermi level matching design, so that the device is in no light, two-dimensional channel material layer forms stable conductive channel under the action of source-drain electrode bias voltage, and the device presents normal conduction characteristic;Under illumination, photosensitive material layer absorbs photon and generates the photo-generated carrier opposite to two-dimensional channel material layer multi-subtype, and the photo-generated carrier is injected into two-dimensional channel material layer under the driving of interface built-in electric field, and is combined with two-dimensional channel material layer multi-subtype, reduces two-dimensional channel material layer carrier concentration and current, realizes negative photoconductive effect.The device structure is simple, repeatability is strong, process compatible, suitable for sensing storage integration and brain-like computing system.

The application relates to the field of optoelectronic technology and discloses a local-shading-resistant perovskite photovoltaic module and a preparation method thereof. The module is divided into multiple sub-cells connected in series by multiple isolation line grooves, a photosensitive material layer with reverse photoconductivity is filled in the first isolation line groove, the photosensitive material layer is made of cadmium sulfide material co-doped with chlorine and copper, when a local sub-cell is shaded and the light intensity is lower than a preset light intensity threshold, the resistance of the photosensitive material layer is suddenly reduced due to the loss of strong light inhibition, thereby a bypass conduction loop across the shaded sub-cell is automatically constructed. The application breaks the physical bottleneck of the conventional module relying on an external bypass diode, solves the barrel effect of the series circuit under uneven light by using the negative photoconductivity of the material, significantly reduces the internal power loss, improves the actual power generation efficiency under complex working conditions, and the overall preparation process is highly compatible with the existing patterning mass production process.

The invention belongs to the technical field of photoelectric functional materials, and discloses a multi-acid-group photoelectric functional material with a reverse photoconduction programmable switching characteristic, and a preparation method and application of the multi-acid-group photoelectric functional material. The polyacid-based photoelectric functional material with the reverse photoconduction programmable switching characteristic is inorganic-organic hybrid polyniobium oxysalt, the chemical composition of the polyacid-based photoelectric functional material is [Ni (BTP)] 4 [Nb10O26]. 35H2O, BTP is a Bis-tris propane organic ligand, and the Bis-tris propane organic ligand is a Bis-tris propane organic ligand. When the multi-acid-group photoelectric functional material with the reverse photoconduction programmable switching characteristic is constructed into a photoelectric device and applied with external bias voltage and illumination, the photoconduction response polarity can be reversibly switched between positive photoconduction and reverse photoconduction, and reversible switching is regulated and controlled by excitation light wavelength and environment relative humidity. The method has important application value in the fields of photoelectric detection, environment sensing and multi-stimulus response optoelectronic devices.