101 results about "Photoconductivity" patented technology

Improved processing methods for enhanced properties of conjugated polymer films are disclosed, as well as the enhanced conjugated polymer films produced thereby. Addition of low molecular weight alkyl-containing molecules to solutions used to form conjugated polymer films leads to improved photoconductivity and improvements in other electronic properties. The enhanced conjugated polymer films can be used in a variety of electronic devices, such as solar cells and photodiodes.

The invention discloses an artificial synaptic device based on a photoelectric coupling memristor and a modulation method of the artificial synaptic device. The artificial synaptic device comprises an upper electrode, a lower electrode and a functional material layer, wherein the functional material layer is arranged between the upper electrode and the lower electrode, the upper electrode, the functional material layer and the lower electrode jointly form a sandwich structure, the functional material layer is made of a material having a photoelectric effect, the lower electrode is a transparent conductive electrode, an electrical signal is input through the upper electrode and the lower electrode, and an optical signal is input through the transparent conductive electrode. In the artificial synaptic device provided by the invention, light is introduced as a control signal of the other end except the electrical signal, two control ends of the artificial synapse device are expanded to three ends, the artificial synaptic device can generate resistance change under an external optical excitation signal by the additionally-arranged end, the artificial synaptic device can be configured to be in a plurality of resistance states correspondingly by selection and control of intensity, frequency and optical pulse time of the optical excitation signal, and various synaptic plasticity functions are correspondingly achieved.

The invention belongs to the technical field of field effect transistors, and particularly relates to a preparation method of a graphene field effect transistor. The method comprises the steps of: providing a substrate through which infrared rays can penetrate; carrying out chemical vapor deposition on graphene to form a graphene channel layer; constructing a pattern on the graphene channel layer to form a grid medium layer; and constructing a pattern on the grid medium layer to form a grid end, wherein the graphene channel layer generates a photoconductive effect operatively under the radiation of the infrared rays so as to lead the electric characteristic of the graphene field effect transistor to be changed. In the preparation method, the technique is simple in process and is compatible with an integrated circuit manufacturing technique, the prepared field effect transistor has the advantages that the sensitivity is high, the power consumption is low, the infrared detection function is ultra-light and ultra-stable, the infrared absorbing belt is wide and the adjustability can be achieved according to the practical application needs.

The invention belongs to the technical field of graphene, and particularly discloses a graphene field effect transistor (GFET) with photoconduction effect and an infrared detector. The GFET comprises a graphene channel layer which generates photoconduction effect under infrared radiation operatively so as to change the electric characteristic of the GFET; the GFET is high in sensitivity and low in power consumption. The infrared detector manufactured by using the GFET does not need a refrigerating system, has low operating cost and is ultralight and ultrastable, the infrared absorbing bandwidth of the infrared detector can be adjusted according to the practical application need; and the problem that the traditional infrared detector is manufactured by complicated process and has hypertoxicity are also avoided; in addition, the infrared detector disclosed by the invention is especially suitable for application in sky-survey infrared detection.

The present invention provides an optical semiconductor device including a semiconductor thin film (4) having photoconductivity and a pair of electrodes (5) and (10) for applying an electric field to an inside of the semiconductor thin film (4) in a direction approximately vertical to a surface of the semiconductor thin film (4), wherein the semiconductor thin film (4) generates an electromagnetic wave when light is applied to a region thereof to which the electric field is applied. The electrodes are provided to a front surface and a back surface of the semiconductor thin film (4) with the semiconductor thin film interposed therebetween.

Each pixel formed on a TFT substrate includes a pixel electrode, and a TFT, a color filter, an opposed electrode and an insulating film are interposed between the pixel electrode and the TFT substrate. A liquid crystal layer is interposed between the TFT substrate and an opposed substrate. An alignment film is provided on each surface of the TFT substrate and the opposed substrate, the each surface being in contact with the liquid crystal layer. A material with high photoconductivity is used for forming the alignment film so as to suppress DC afterimage. Meanwhile, each thickness of the color filter for the respective colors is changed for preventing a yellow shift resulting from absorption of high intensity of light with short wavelength by the alignment film.

To provide a semiconductor substrate in which a semiconductor element having favorable crystallinity and high performance can be formed. A single crystal semiconductor substrate having an embrittlement layer and a base substrate are bonded with an insulating layer interposed therebetween; the single crystal semiconductor substrate is separated along the embrittlement layer by heat treatment; a single crystal semiconductor layer is fixed to the base substrate; the single crystal semiconductor layer is irradiated with a laser beam; the single crystal semiconductor layer is in a partially melted state to be recrystallized; and crystal defects are repaired. In addition, the energy density of a laser beam with which the best crystallinity of the single crystal semiconductor layer is obtained is detected by a microwave photoconductivity decay method.

The present invention provides a low-cost hydrogen gas sensor, which exhibits high sensory selectivity for protons and operates at room temperature, and can also provide a highly sensitive sensor capable of fulfilling the important functions of detecting hydrogen gas and preventing leakage accidents in production plants that use hydrogen gas as a carrier, in hydrogen gas storage facilities, and in so-called fuel cells that use hydrogen gas as an energy source. In addition, the sensor is also effective as an acid sensor for hydrofluoric acid and the like. The present invention relates to an acid and hydrogen gas sensor, wherein protons are brought into contact with an organic compound containing an introduced pyridine ring (such as pyridine-DPP), and the change in electrical resistivity, photoconductivity, or optical absorption band for the organic compound that accompanies proton addition is detected.

An image recording medium includes: a support which is transparent to radiation for use in recording, and resistant to shock; a wavelength conversion layer which contains an organic binder and a fluorescent material which converts the radiation into visible light; a first electrode layer which is transparent to the visible light; a recording-side photoconductive layer which exhibits photoconductivity when the recording-side photoconductive layer is exposed to the visible light; a charge storage region which stores electric charges which are generated in the recording-side photoconductive layer in response to exposure to the visible light; a reading-side photoconductive layer which exhibits photoconductivity when the reading-side photoconductive layer is exposed to reading light; and a second electrode layer which is transparent to the reading light.

The invention discloses a method for measuring the carrier concentration of graphene by virtue of Goos-Hanchen shift. The variation of the Goos-Hanchen shift after introduction of the graphene is measured to measure the photoconductivity of the graphene and further measure the carrier concentration of the graphene. The method specifically comprises the following steps: covering a metamaterial with a refractive index approaching to zero with a single layer of graphene, obliquely emitting a terahertz beam to the surface of the graphene, detecting the Goos-Hanchen shift of reflected light, and calibrating the carrier concentration or the Fermi energy level of the graphene according to a relationship between the calibrated Goos-Hanchen shift and the carrier concentration or the Fermi energy level of the graphene. According to the method, a method of optically measuring the Goos-Hanchen shift without direct contact with a graphene sample is adopted, and is a non-contact and damage-free measurement method, so that additional influencing factors are avoided.

A photorefractive composite, a spatial light modulator and a hologram display device using the same include at least one carborane compound expressed as the following Chemical Formulae 1A through 1C:

wherein the photorefractive composite exhibits photoconductivity and optical nonlinearity.

A high quality liquid crystal display device has an alignment film with a photoconductive characteristic. Since a region having gate lines situated therebelow does not undergo irradiation of a backlight, no photoconductive effect can be obtained. A photoresist is disposed below the alignment film situated over the gate lines in order to transfer the charges in the region to an opening portion of the alignment film in an early stage. Since the photoresist has a thickness of about 1.5 μm, which is 20 times or more the 70 nm thickness of the alignment film, the resistance in the lateral direction is low in a portion where the photoresist is present. Accordingly, since the charges on the alignment film present over the gate line transfer to the opening portion of the alignment film and are eliminated in an early stage, the residual image is eliminated in the early stage.

The invention relates to a light-enhancement type flexible supercapacitor and a preparation method thereof. The supercapacitor comprises two electrode plates and an electrolyte positioned between thetwo electrode plates, wherein the electrode plates are flexible electrode plates, and each flexible electrode plate comprises a polydimethylsiloxane substrate and a graphene/carbon nano tube/polyaniline composite material covering one side of the polydimethylsiloxane substrate, and the electrolyte is polyvinyl alcohol/phosphoric acid hydrogel and is coated on the flexible electrode plates. Compared with the prior art, the supercapacitor constructed by the invention employs the excellent photoconductivity of the covalently connected graphene/carbon nano tube, so the prepared supercapacitor hasthe excellent mechanical performance and good electrochemical energy storage performance, and is expected to be applied to the fields of wearable electronic devices, photosensitive flexible integrateddevices and the like.

The invention discloses an iron-doped carbon thin-film material with photovoltaic and photoconductive effects and a preparation method thereof, belonging to the technical field of thin-film solar cell and the photoelectric device which use the new energy. The iron-doped carbon thin-film material is prepared by arranging an aluminum oxide layer and an iron-doped carbon layer on an n-type Si (silicon) substrate with the pulsed laser deposition process without using any toxic, flammable and explosive substances during the preparation process. The iron-doped carbon thin-film material has excellent performances and low price and is the excellent material for the visible light sensor material and the potential photovoltaic device. When irradiated by a simulated sunlight source of 100 mW/cm2 (AM 1.5) in the room temperature, the photoelectric thin film can ensure that the device has the open-circuit voltage of 436 mV, the short-circuit current of 14 mA/cm2 and the fill factor of more than 33 percent. The photoelectric thin film has the photoconductive change value of more than 400 times under the condition that the test voltage is about 1 V.

The invention discloses an optical coupler. The optical coupler comprises a substrate, and a luminous thin film group, a transparent electric insulating and isolating layer and a photosensitive thin film group, which are sequentially stacked on the substrate, wherein the photosensitive thin film group further comprises a first electrode of the photosensitive thin film group, a photosensitive functional layer and a second electrode of the photosensitive thin film group; the photosensitive functional layer comprises an organic photosensitive layer with photoelectric conduction effects or photosensitivity; and the absorption spectrum width of the photosensitive layer is more than or equal to 300nm; the color coordinates of the luminous thin film group are CIEx=0.05 to 0.7 and CIEy=0.05 to 0.7. According to the optical coupler, by the photosensitive layer with a great absorption spectrum width, the range of the color coordinates of the luminous thin film group can be widened, limitations to the selection of light sources are reduced, the transmittance of a medium is ensured, and meanwhile, the luminous intensity is also effectively enhanced, so that the effective absorption of the photosensitive thin film group over light rays emitted by the luminous thin film group is ensured, and the current transmission ratio is increased.

Bolometer system and method for detecting, at BLIP levels, presence of radiation over a broad range of wavelengths in an infrared spectrum and in a temperature range from 20 K to as high as room temperature. The radiation is received by a Si crystal having a region that is doped with one or more of In, Ga, S, Se, Te, B, Al, P, As and Sb in a concentration ratio in a range such as 5×10⁻¹¹ to 5×10⁻⁶. Change in electrical resistance ΔR due to receipt of the radiation is measured through a change in voltage difference or current within the crystal, and the quantity ΔR is converted to an estimate of the amount of radiation received. Optionally, incident radiation having an energy high enough to promote photoconductivity is removed before detection.

The present invention provides novel strategies for mitigating the Staebler-Wronski Effect (SWE), that is, the light induced degradation in performance of photoconductivity in amorphous silicon. Materials according to the present invention include alloys or composites of amorphous silicon which affect the elasticity of the materials, amorphous silicon that has been grown on a flexed substrate, compression sandwiched comprising amorphous silicon, and amorphous silicon containing nanoscale features that allow stress to be relieved. The composites are formed with nanoparticles such as nanocrystals and nanotubes. Preferred are boron nitride nanotubes (BNNT) including those that have been surface modified.

A photorefractive dendron compound, a photorefractive dendrimer compound and applications thereof, and more particularly, a photorefractive dendron compound, including a non-linear chromophore containing a tricyanopyrroline-based electron-withdrawing group and a carbazole derivative having excellent charge transport properties, a method of preparing the photorefractive dendrimer compound, a photorefractive device including the photorefractive dendrimer compound, and a method of manufacturing the photorefractive device. In the photorefractive dendrimer compound, dendron has the non-linear optical chromophore and carbazole introduced thereto to thus impart one molecule with both photoconductivity and non-linear optical properties, thereby solving conventional problems caused by poor compatibility between photoconductive material and chromophores in conventional photorefractive material. The dendrimer compound may be applied to bio-imaging techniques thanks to the use of the non-linear optical chromophore, which is sensitive to near infrared light.

An illuminating container comprises an insulated housing used for storing at a cool temperature. The housing comprises a solar portion that harvests solar energy to generate electricity, and thereby constantly recharge a power source. The power source powers an illumination portion to emit a light towards an interior cavity of the housing. An adjustable reflector directionally guides the light towards the cavity, or in other directions. A positional switch triggers the illumination portion to power on when the lid is opened, which is useful at night time or dark places. A photoresistor exhibits photoconductivity to enable selective lighting by the illumination portion when it is substantially dark. The position of the lid and the intensity of the incident light determine whether the illumination portion is powered on or off. A power switch overrides both the position switch and the photoresistor in powering on and off the illumination portion.

A process for producing poly-p- phenylacetylene/phthalocyanine composite material excellent in photoconductivity comprises the steps of preparing the synthetic acid amide zinc phthalocyanine, producing carboxyl zinc phthalocyanine by carboxyl used instead of amido, based on which, acyl chloride zinc phthalocyanine is obtained by means of the chloridization with the production of synthetic polystyrene and a complex reaction between the acyl chloride zinc phthalocyanine and the polystyrene. The poly-p- phenylacetylene/phthalocyanine composite material formed by the process is characterized by an excellent film formation, a high photoconductive performance and a good use in solar batteries of soft foundation.

An electrophotographic imaging apparatus having a first toner accepting layer and an intermediate transfer member. The first toner accepting layer is positioned in electrical contact with a) a charge provider, b) an irradiation source that activates photoconductivity in the first toner accepting layer, and b) at least one toner applicator, so that a first toner image can be formed on the first toner accepting layer. The first toner layer is movable, after interaction with a), b) and c), into contact with the intermediate transfer layer from which the first toner image can be transferred to an image bearing member. The intermediate transfer member comprises a non-conductive flexible film layer, a layer of an electrically conductive material affixed to a first surface of the non-conductive flexible film layer and segmented into electrically isolated regions or zones, and the electrically conductive material layer has an electrically resistive polymeric coating thereon.