The invention relates to the field of photoelectric material and device
physics, and discloses a preparation method of a Ga2O3: Sn / HfOx
heterojunction photoelectric sensor, and the method comprises the following steps: S1, cleaning a substrate, S2, preparing a Ga2O3: Sn thin film, S3, growing an
electrode, S4, preparing an HfOx thin film, and carrying out neural
synapse bionic application of the Ga2O3: Sn / HfOx
heterojunction photoelectric sensor. Comprising Ga2O3: Sn / HfOx
synaptic plasticity research and Ga2O3: Sn / HfOx
photoelectric sensor sensing and storage calculation integrated application research. The Ga2O3: Sn thin film is prepared by adopting a
sol-
gel method with accurate and controllable
doping amount, donor
doping with controllable concentration is realized by controlling the
mass of the added
tin sheet, so that the
photocurrent and
responsivity of the photoelectric sensor are increased, the HfOx thin film is prepared by adopting a magnetron
sputtering method, the photoelectric sensor with a double-layer structure is constructed, the
detection rate and
responsivity of the device are improved, and the photoelectric sensor is suitable for the field of photoelectric sensors. An
ultraviolet signal is used to simulate a plurality of synaptic functions, including EPSC, PPF and empirical learning behaviors. Furthermore, a high-
linearity light-enhanced electrical suppression behavior is realized, and a basis is provided for realizing a high-precision image recognition function.