107 results about "Synaptic plasticity" patented technology

The invention provides a multiband photoresponse nerve synapse device based on a two-dimensional and organic heterostructure, an array and application, and belongs to the technical field of organic electric solid-state devices. The device provided by the invention adopts a three-end bottom gate top contact structure and comprises a gate substrate, an insulating layer, a channel layer and a source / drain electrode, and the channel layer forms an II-type heterojunction by a two-dimensional semiconductor material with a narrow-band gap characteristic and an organic semiconductor material. The heterostructure realizes ultraviolet to far infrared (365nm-10 [mu] m) multiband photoelectric response, and shows synaptic plasticity under light pulse modulation, including short-term enhancement, long-term enhancement and learning-forgetting-re-learning characteristics. Large-area array preparation of the device can be realized through methods such as chemical vapor deposition, solution spin coating, jet printing or layer-by-layer self-assembly. The technology not only can be used for brain-like learning and memory simulation, but also can be applied to the fields of sensing and memory integrated intelligent systems, optical neural networks, artificial vision, multi-mode intelligent sensing and the like.

The invention discloses a multi-modal sensory artificial synaptic device based on a framework material and a preparation method and application thereof. The artificial synaptic device comprises a substrate and a channel, wherein the channel is arranged on the surface of the substrate; the channel is an amorphous organic metal framework film which responds to light and gas stimulation; the metal electrode is arranged on the surface of the channel; the metal electrode comprises a source electrode and a drain electrode. Compared with the prior art, the framework material with excellent photoelectric response performance is adopted, and a novel artificial synapse device with multi-mode sensing ability is constructed by fully utilizing the regular pore structure, large specific surface area and good photoresponse characteristic of the MOF material. The two electrodes of the device are connected into electrical test equipment, the conductivity of the amorphous MOF thin film can be changed under the stimulation of optical pulse signals, and finally simulation based on photoresponse synaptic plasticity is achieved. The device is placed in different gas environments, and the conductivity of the MOF film can be changed by capturing and releasing target gas molecules through the porous characteristic of the amorphous MOF material, so that simulation based on gas response synaptic plasticity is realized.

The invention discloses an analog memristor based on a Ga2O3 / TiO2 heterojunction structure and a preparation method of the analog memristor, and belongs to the field of nonvolatile resistive random access memorizers, the preparation method comprises the following steps: under a vacuum condition, depositing a conductive film on a pretreated insulating substrate by adopting a physical vapor deposition method to serve as a bottom electrode; sequentially depositing a Ga2O3 thin film and a TiO2 thin film on the bottom electrode by adopting a magnetron sputtering method, and constructing a Ga2O3 / TiO2 heterojunction as a resistive layer; and depositing a conductive thin film on the surface of the resistive layer by adopting a physical vapor deposition method to serve as a top electrode to obtain the analog memristor based on the Ga2O3 / TiO2 heterojunction structure. A Ga2O3 semiconductor material with a wide forbidden band and high electron mobility and a TiO2 material with a high dielectric constant, stability and reliability are adopted, and the excellent and high-stability heterojunction memristor is prepared through a specific sputtering process. Bionic behaviors such as synaptic plasticity can be realized, and the method has important application potential in the fields of high-density storage, neural network calculation, biological synaptic simulation and the like.

The invention relates to the technical field of working face mine pressure multi-parameter intelligent monitoring and early warning systems, and particularly discloses a working face mine pressure multi-parameter intelligent monitoring and early warning system. The system comprises a multi-source sensing data acquisition device, a pulse sequence coding unit, a bionic pulse neural network early warning model, a dynamic attention regulation and control module and an early warning information output terminal, multi-source heterogeneous data such as hydraulic support resistance, micro-seismic energy and acoustic emission frequency are converted into a pulse event sequence similar to a biological neural signal, a rock stratum instability precursor is identified by using a bionic model simulating a neuron discharge mechanism and synaptic plasticity, key signals are self-adaptively strengthened in combination with a dynamic attention mechanism, and noise is suppressed. According to the technical scheme, multi-parameter coupling characteristics can be captured with high sensitivity, the early warning accuracy and advance are improved, the false alarm rate is reduced, and reliable guarantee is provided for deep coal mine safety.

The invention discloses a synaptic plastic mechanism bionic circuit based on a threshold symmetric memristor, and relates to the technical field of bionic circuits, the bionic circuit comprises a pre-synaptic neuron circuit, the threshold symmetric memristor and a post-synaptic neuron circuit; the bionic circuit is divided into an excitatory synaptic moldability mechanism circuit and an inhibitory synaptic moldability mechanism circuit according to a synaptic moldability mechanism; the design method of the circuit comprises the following steps: firstly, designing neuron waveforms before and after synapse, then traversing changes of memristive synapse conductance values at different time intervals to obtain a corresponding curve of the conductance changes and the time intervals, verifying the fitting degree of a biological synapse plastic mechanism curve and the curve, and if the fitting degree is low, determining that the biological synapse plastic mechanism curve is not matched with the curve. And if not, redesigning the pulse waveforms before and after synapse. The synaptic plasticity mechanism simulated by the bionic circuit provided by the invention and a biological synaptic STDP mechanism model have a small fitting error, the provided design method is higher in universality, circuit parameters can be adjusted according to different memristors, and different forms of biological synaptic plasticity mechanisms can be simulated.

The invention provides an organic photoelectrochemical synaptic transistor and a preparation method and a regulation and control method thereof, and belongs to the technical field of transistors. The transistor comprises a substrate, a gate electrode, a source electrode, a drain electrode, an organic semiconductor channel layer and an electrolyte layer; according to the invention, various synaptic plasticity functions can be realized on a single synaptic transistor device through a simple and efficient preparation process; the method has the advantages of simplicity, high efficiency and convenience in large-scale integration. The synergistic effect of photons, electrons and ions is used as a regulation and control mechanism, a single-component n-type organic semiconductor is used as a channel layer material, voltage programming pulses are applied to a grid electrode, light irradiation is applied to a channel layer to simulate biological synaptic stimulation, output current is obtained at a source electrode and a drain electrode to simulate post-biological synaptic current, and the potential safety hazard is eliminated. Information encryption, compiling, hiding and recovery of the Morse code are simulated based on the output pulse current, and the method can be widely applied to the brain-like intelligence field of cognitive judgment with information double anti-counterfeiting encryption.

The present application relates to a nutritional composition, a product comprising the same and use thereof in the preparation of a product for alleviating synaptic plasticity impairment of a body. The nutritional composition comprises: docosahexaenoic acid (DHA) and / or a metabolic precursor thereof, sodium hyaluronate (SH), and lactoferrin (LF). When docosahexaenoic acid (DHA), sodium hyaluronate (SH) and lactoferrin (LF) are used in combination, they can synergistically alleviate synaptic plasticity impairment of a body, in particular, increase nerve growth factor (NGF) content and / or brain-derived neurotrophic factor (BDNF) content in PC12 cells of the body, and / or increase expression of synaptic-related proteins in PC12 cells of the body.

This invention relates to the fields of semiconductor information storage and artificial synaptic devices, specifically to a biological synaptic intrinsically self-assembled topological phase-change memristor and its fabrication method. The fabrication method includes: providing a substrate; depositing a bottom electrode; and depositing SrFeO on the bottom electrode. x The thin film serves as the storage medium layer; the storage medium layer undergoes heat treatment, including in-situ annealing and post-annealing. By controlling the oxygen pressure difference between in-situ and post-annealing, the single-component SrFeO is made more efficient. x An intrinsically self-assembled superlattice structure, characterized by alternating vertical and horizontal orientation regions of oxygen vacancy channels, spontaneously forms within the thin film. This structure restricts the formation sites of conductive filaments, significantly improving the consistency and stability of the device's resistive switching cycle. The process of this invention is simple, requiring no introduction of a second-phase material. The resulting memristor requires no electrical formation, exhibits a high on / off ratio, multi-level storage, and short-term synaptic plasticity, making it applicable to neuromorphic computing chips and artificial intelligence devices.

The invention discloses a novel active peptide composition for improving concentration and a preparation method and application thereof. Belongs to the technical field of new active peptide composition preparation. The novel active peptide composition is prepared through synergism of the novel active peptide PAVP, the blood-brain barrier penetrating peptide and the metabolism regulator, when the novel active peptide PAVP, the blood-brain barrier penetrating peptide and the metabolism regulator act together, the novel active peptide composition has a synergistic effect, and the concentration improving effect of the novel active peptide composition is better than that of each independent component; the time for the mouse to explore new things can be prolonged to a certain extent, the relative expression quantity of synaptic plasticity markers PSD-95, BDNF and p-CREB can be increased to a certain extent, and technical support is provided for research and development of concentration-related products.

The invention discloses an application of a pyruvate dehydrogenase kinase (PDKS) inhibitor in preparation of a composition for treating Alzheimer's disease (AD), and particularly discloses an application of the PDKs inhibitor in preparation of the composition for treating the AD. According to the invention, the level of oxidative phosphorylation (OXPHOS) of microglial cells is obviously enhanced, the inflammatory response of the microglial cells is effectively reduced, the migration and aggregation capabilities of the microglial cells are obviously improved, the capability of the microglial cells to phagocytize and degrade extracellular beta-amyloid protein (A beta) plaque is obviously enhanced, the cognitive function defect of AD model mice is effectively improved, and the application of the microglial cells in the treatment of the AD model mice is promoted. The preparation is simple, and the application is wide.

The application discloses a kind of artificial synapse devices with color / electric dual weight regulation.The composition of the device includes: the surface edge of substrate, source electrode and drain electrode are respectively distributed with interval, and the surface of substrate between source electrode and drain electrode is covered with nanowire film;Nafion film and ion glue are sequentially covered on nanowire film.The device obtained by the application can realize the dual regulation of color weight and conductance weight under electric stimulation, and make the two weights have extremely short synaptic plasticity, and after removing stimulation for only 1 second, excitatory chroma is completely reduced to 0, and residual excitatory post-synaptic current is reduced to 1 / 3000 of initial value.

This invention discloses a method for screening or assessing the risk of GLP-1 receptor agonist-related mood disorders. It reveals for the first time that TTR is a key molecular switch for the bidirectional mood effects of GLP-1 receptor agonists, and its expression level needs to be maintained within a specific physiological window to ensure mood homeostasis. This invention assesses the risk of developing mood disorders after using GLP-1 receptor agonists by detecting the expression level or activity of TTR in subjects. This invention also provides kits for assessing the mood side effects of GLP-1 receptor agonists, methods for screening candidate drugs for the prevention or treatment of related mood disorders, and pharmaceutical compositions containing TTR or its agonists. This invention elucidates the molecular mechanism by which GLP-1 receptor agonists inhibit TTR expression through the cAMP / PKA / Gli3 signaling pathway, thereby affecting the ERK / CREB pathway and synaptic plasticity, providing novel targets and strategies for precise drug use, risk warning, and intervention for related mood disorders using GLP-1 receptor agonists.

The invention discloses an intelligent hardware configuration optimization method based on deep learning. The method comprises the following steps of collecting system operation data and performing preprocessing; generating a high-dimensional input feature matrix by using an input feature analysis module of the improved NCGM model; introducing a microsynaptic plasticity mechanism to form initial local performance characterization; introducing a continuous time topological evolution mechanism, and constructing a dynamic topological structure; forming a global performance representation vector; adopting a multi-domain collaborative adaptive optimization mechanism to obtain a convergence parameter set; and outputting a hardware configuration parameter set, thereby realizing intelligentization and adaptive configuration optimization of the target hardware system, and improving the self-learning ability, performance prediction precision and energy consumption utilization rate of the hardware system.

The present invention relates to polymorphs of a nitrogen-containing heterocyclic compound. The polymorphs of the present invention can effectively enhance or reactivate synaptic plasticity, and inhibit or eliminate the accumulation of beta-amyloid, without causing side effects, thereby exerting a therapeutic effect on various nervous system diseases or neurodegenerative diseases. In addition, the polymorphs of the present invention exhibit excellent physicochemical properties, such as stability, solubility, hygroscopicity, and mechanical strength, and show excellent permeability to the blood-brain barrier (BBB).

The invention discloses a novel brain protein enzymolysis active peptide for improving concentration and application thereof. Belongs to the technical field of new active peptide preparation. According to the invention, fresh pig brain is used as a raw material for enzymolysis and purification to successfully prepare the novel active peptide PAVP through brain protein enzymolysis. Efficacy verification is further carried out on the oligopeptide PAVP, and experimental results show that the oligopeptide PAVP can remarkably prolong the time of exploration of mice on new things in a new things recognition experiment and improve the concentration degree; in order to further verify the action mechanism of the PAVP, the expression quantities of synaptic plasticity markers PSD-95, BDNF and p-CREB in a mouse body are detected on the molecular level, and experimental results show that the PAVP not only repairs the synaptic touchable injury, but also possibly further enhances the synaptic function so as to achieve the purpose of improving the concentration degree.

The present invention relates to a synergistic composition for the treatment of disorders related to central nervous system (CNS) excitability. The synergistic composition comprises combination of GABA receptor agonists and synaptic plasticity enhancer or salts thereof along with pharmaceutically acceptable excipients. The GABA receptor agonists are selected from the group consisting of 4-[(2R)-2,4-Dihydroxy-3,3-dimethylbutanamido]butanoic acid, 4- (Pyridine-3-carbonylamino)butanoic acid and 4-(hexadecanoylamino)butanoic acid or salts thereof. The synaptic plasticity enhancer are selected from magnesium 2- acetamidoethanesulfonate, magnesium bis (2-aminoethane-1-sulfonate), magnesium;(2S,3R)- 2,3,4-trihydroxybutanoate, N-(2-Hydroxyethyl)hexadecanamide, 1-(4-aminobutyl)guanidine and 5'-inosinic acid or salts thereof.

The invention belongs to the technical field of artificial intelligence, and particularly discloses a cross-modal injury perception associative memory circuit based on an AIST memristor, and the circuit comprises an injury perception module which is used for converting touch, visual and auditory multi-modal injury signals into corresponding pulse voltage signals; the associative learning module is used for simulating synaptic plasticity through a memristor and strengthening the associative memory of a cross-modal signal; when the multi-modal damage signals are input at the same time, the resistance value of the memristor is reduced, the connection weight between neurons is enhanced, and associated storage and mutual activation of cross-modal signals are realized; the generalization differentiation module is used for extracting common characteristics of cross-modal signals, enabling similar stimuli to trigger the same response, and distinguishing signal specificity characteristics by using a resistance state separation mechanism of a memristor; and the output neuron module is used for generating a final response signal according to the processing result of the generalization differentiation module and simulating the stress response of the organism. The biological nervous system information processing mechanism can be comprehensively simulated.

The invention discloses application of a Kunlun chrysanthemum aqueous extract in preparation of drugs for improving autism core symptoms, and belongs to the technical field of biological medicines. In order to solve the problem that the prior art lacks a medicine which is small in side effect, natural in source and capable of improving the autism core symptom, the invention provides application of a coreopsis tinctoria aqueous extract in preparation of the medicine for improving the autism core symptom, and the coreopsis tinctoria aqueous extract has a multi-dimensional synergistic effect of adjusting synaptic plasticity, inhibiting neuroinflammation, improving behavioral phenotype and the like. The concept of treating complex nervous system diseases by traditional Chinese medicine is met, and the autism core symptom is fundamentally improved; the medicine containing the coreopsis tinctoria aqueous extract provided by the invention has the advantages of high safety and small side effect.

This invention provides a freeze-thaw enhanced low-energy PEDOT:PSS composite fiber-based artificial synaptic transistor and its applications. The fiber-based artificial synaptic transistor consists of source / drain fiber electrodes, a gate fiber electrode, and an ion gel electrolyte. The source / drain and gate fiber electrodes are prepared from PEDOT:PSS composite fibers. Using PEDOT:PSS, antifreeze, and polymers as substrates, the anisotropic composite fiber electrodes with high strength, short energy dissipation paths, and stretchability are prepared through freeze-thaw pretreatment and wet spinning technology. The freeze-thaw enhanced low-energy PEDOT:PSS composite fiber-based artificial synaptic transistor provided by this invention exhibits a high on / off ratio, fast response rate, low energy consumption, excellent synaptic plasticity, and good pulse cycle stability, showing great application potential in brain-computer interfaces, human-computer interaction, smart healthcare, and smart electronic fabrics.

The application discloses an IGFBP-2 derived polypeptide and application thereof in preparation of an antidepressant, and relates to the technical field of biological medicines. The amino acid sequence of the polypeptide is Pro-Lys-Lys-Leu-Arg-Pro, the N terminal of which is acetylated and the C terminal of which is amidated, and the amino acid sequence is shown as SEQ ID NO:1. The polypeptide has a small molecular weight, can easily penetrate the blood-brain barrier, and has good stability after terminal modification. Animal experiments prove that the polypeptide can significantly improve the depressive behavior of Shank3 gene knockout mice, including improving the spatial cognitive ability, enhancing the social interaction and curiosity, and relieving the anxiety behavior. Cell experiments prove that the polypeptide can significantly improve the viability of hippocampal neuron cells from Shank3 gene knockout mice, and up-regulate the expression level of synaptic plasticity related proteins GluA1 and SYN1. The polypeptide can be prepared by a chemical synthesis method, has low cost, and can be used for preparing a medicine for preventing or treating depression (especially depression related to Shank3 gene mutation).

The application provides application of a GPR65 agonist in preparation of a medicine for preventing and / or treating Alzheimer's disease, and belongs to the technical field of biological medicine.The application researches and finds that the GPR65 agonist improves the cognitive function of an AD mouse model, reduces neural inflammation and pathological characteristics, and enhances synaptic plasticity.The application provides a molecular target and an intervention window for a treatment strategy in AD research, and provides important theoretical basis and experimental support for subsequent drug development and translational medicine research.

The application discloses application of TESC as an Alzheimer's disease prevention and treatment target and relates to the field of biological medicines. A TESC overexpression (TESC-OE) hippocampal neuron cell line is constructed through lentivirus transfection, and the result shows that TESC-OE has the ability to resist A beta-induced neuron apoptosis and synapse damage. A TESC overexpression model in the hippocampus of a mouse is constructed through stereotactic injection of an adeno-associated virus, and the result shows that the hippocampal gray matter volume in the brain of the TESC-OE mouse is significantly larger than that of a wild type mouse. A beta stereotactic modeling is performed on the basis of TESC overexpression in the hippocampus, and the result shows that the TESC-OE mouse can significantly resist A beta-induced hippocampal atrophy, learning and memory dysfunction and impaired synaptic plasticity. Immunoblotting analysis reveals the molecular mechanism that TESC can increase the expression of anti-apoptotic genes in the hippocampus and reduce the expression of pro-apoptotic genes to exert a neuroprotective effect.

The application discloses a financial guarantee circle big data analysis system and method, relates to the technical field of data analysis, and comprises the following steps: collecting industrial and commercial, judicial and financial data in real time through an API gateway, constructing a quantum guarantee network model and a quantum annealing parameter configuration file after preprocessing, executing implicit relation detection by using a quantum annealing machine, generating a high-correlation guarantee circle list and a quantum calculation log in combination with Bayesian confidence calibration, simulating a risk transmission path based on a synapse plasticity model of a pulse neural network, outputting a synapse weight change table and a dynamic transmission graph, mapping a risk level to a hierarchical blocking strategy matrix through a dynamic blocking decision engine, performing topology reinforcement by using a minimum spanning tree algorithm in combination with historical data, generating a stable subnet list and a protection path graph, and finally weighting and fusing quantum logs, transmission models and subnet data to construct a three-dimensional risk atlas and optimizing real-time decision by using a long short-term memory network and an attention mechanism network.

The application discloses an individualized transcranial electrical stimulation system and method based on a multi-scale fusion brain model, which comprises the following modules: a large-scale brain model construction module, which is used for reconstructing an individualized brain function connection matrix by using electroencephalogram (EEG) data, then constructing an individualized large-scale brain model based on an average field model, and equivalent transcranial electrical stimulation to an external current input of the large-scale brain model, and constructing a large-scale brain model under the action of external stimulation; a microscopic neural circuit dynamics model construction module, which is used for fusing single neuron dynamics and synaptic plasticity, adopting a coupled leaky integrate-and-fire model and a spike-timing-dependent plasticity model to establish long-term plasticity between synapses, and then establishing a local neural circuit model through a stimulation target and downstream brain areas; an individualized multi-scale fusion brain model construction module, which is used for replacing corresponding nodes in the large-scale brain model with the local neural circuit model, and constructing an individualized multi-scale fusion brain model; and a stimulation response simulation module, which is used for adjusting transcranial electrical stimulation parameters by using the constructed individualized multi-scale fusion brain model, and obtaining EEG activity and short-term response and long-term effect. The application can more accurately describe the complexity of brain activity by establishing an individualized multi-scale fusion brain model.

The application discloses a kind of non-volatile non-monotonic neuron device and preparation method thereof, it is related to neuron device technical field, including substrate, floating gate structure is set on substrate, two-dimensional material heterojunction is set on the side of floating gate structure away from substrate, two-dimensional material heterojunction is composed of semiconductor channel layer and bridge layer, bridge layer is used to form heterojunction section and realize the transport of carrier, electrode structure includes top electrode and bottom electrode, top electrode is set on the side of floating gate structure away from substrate and is electrically connected with two-dimensional material heterojunction, bottom electrode is set on the side of substrate away from floating gate structure.The application can produce clock-shaped response curve that is most intense to medium-intensity input similar to neuron pair reaction by combining p-type two-dimensional semiconductor and n-type two-dimensional semiconductor with bridge layer, while integrated floating gate structure endows the device with non-volatility, so that it can simulate long-term memory and synaptic plasticity of biological neuron.

The application relates to an artificial visual nervous system based on a bimodal neural device, comprising a bimodal visual information calculation array composed of a physical convolution kernel array and a synapse calculation array, the physical convolution kernel array is used for receiving an ambient light signal and converting into an electrical signal output, the synapse calculation array is used for receiving the electrical signal and converting into a visual signal, and the physical convolution kernel array and the synapse calculation array are both composed of a plurality of bimodal transistors. The application has excellent bimodal collaborative calculation capability, the receptive field mechanism (excitatory / inhibitory response) of a retinal bipolar cell is simulated through the physical convolution kernel array, image feature extraction and preprocessing are realized, the synaptic plasticity (LTP / LTD mechanism) of a central nervous system is simulated in combination with the synapse calculation array, high-level calculation of the visual signal is completed, and a complete visual nerve bionic system is formed by virtue of an array composed of single devices.

The invention provides an application of circRNA 31549 in preparation of a medicine for preventing, treating and / or relieving disorder of transformation from short-term memory to long-term memory after an operation, and belongs to the technical field of biological medicine. The invention provides an application of circRNA31549 or a preparation of over-expressed circRNA31549 in preparation of a medicine for preventing, treating and / or relieving the disorder of transformation from short-term memory to long-term memory after an operation. The hippocampus CA1 region circRNA 31549 / miR-497a-5p mediated BDNF down-regulation participates in the postoperative synaptic plasticity injury and the transformation disorder from short-term memory to long-term memory of old mice. The circRNA 31549 and the miR-497a-5p can be perfectly paired in the form of 7mer-m8, and the BDNF expression is regulated and controlled to mediate the transformation disorder of the old patient from the short-term memory to the long-term memory after the operation.

The invention belongs to the technical field of photoelectric detection, and particularly relates to a near-infrared photoelectric synapse device and a preparation method thereof. The near-infrared photoelectric synapse device comprises a conductive substrate, a transition metal sulfide layer, a perovskite active layer and an electrode layer which are stacked from bottom to top, wherein when the thickness of the transition metal sulfide layer is gradually increased within a preset thickness range, a high-density interface capture state is formed between the transition metal sulfide layer and the perovskite active layer, so that the double-pulse facilitation index of the near-infrared photoelectric synapse device is gradually increased under the stimulation of near-infrared pulses; therefore, photoelectric response and short-time synaptic plasticity are realized in a near-infrared band. The photoelectric synaptic device designed in the scheme can sense infrared signals, the working wave band range of the device is widened, and meanwhile, the photoelectric synaptic device has a high double-pulse simplification index, namely, the device can show a low-energy-consumption strong synaptic behavior in a near-infrared wave band, so that the photoelectric synaptic device can be used for constructing a brain-like vision and neuromorphic computing system.

The application discloses an anti-radiation ferroelectric neural device and a preparation method and brain-like application thereof, and relates to the technical field of semiconductor devices.The multifunctional anti-radiation ferroelectric neural device structure is sequentially provided with a top electrode, a dielectric layer, a ferroelectric layer and a bottom electrode from top to bottom.The microphysical essence of realizing the functional characteristics of a conventional ferroelectric brain-like device is ferroelectric domain nucleation growth or continuous domain wall motion, and such gradual quasi-linear ferroelectric domain motion can only be used to simulate synaptic plasticity, which causes problems such as single function and low integration of the ferroelectric brain-like device.The application utilizes the ripple wave motion of patterned ferroelectric domains and the linking effect of conductive domain walls between adjacent patterned ferroelectric domain structures, adjusts the ripple wave motion of ferroelectric domains and charge dynamics characteristics through the dielectric layer containing nano-conductive columns, so that the simulation of various neural behaviors is realized, and more importantly, the application has strong anti-radiation capability.

The application discloses a kind of all ferroelectric neural-paradigm units and preparation methods thereof.A kind of all ferroelectric neural-paradigm unit, the all ferroelectric neural-paradigm unit structure includes the upper electrode array, ferroelectric layer and lower electrode array sequentially arranged from top to bottom;The single electrode shape of the upper electrode array and the lower electrode array is rectangle, the width of single electrode is 1nm~10 μm respectively, the spacing between adjacent electrodes is 10nm~50 μm;The width ratio of the single electrode of the upper electrode array and the single electrode of the lower electrode array is 0.001~1000;The upper electrode array and the lower electrode array electrode staggered arrangement, the angle range of staggered angle is 0~180°.The application can efficiently simulate neuron firing, synaptic plasticity and other behaviors by fine changing electric field loading conditions to regulate polarization, shielding, space charge dynamics in ferroelectric functional layer, can also realize the simulation of neuron and synapse simultaneously, to build all ferroelectric brain network.