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95 results about "Synaptic plasticity" patented technology

In neuroscience, synaptic plasticity is the ability of synapses to strengthen or weaken over time, in response to increases or decreases in their activity. Since memories are postulated to be represented by vastly interconnected neural circuits in the brain, synaptic plasticity is one of the important neurochemical foundations of learning and memory (see Hebbian theory).

Mobile brain-based device for use in a real world environment

A mobile brain-based device BBD includes a mobile base equipped with sensors and effectors (Neurally Organized Mobile Adaptive Device or NOMAD), which is guided by a simulated nervous system that is an analogue of cortical and sub-cortical areas of the brain required for visual processing, decision-making, reward, and motor responses. These simulated cortical and sub-cortical areas are reentrantly connected and each area contains neuronal units representing both the mean activity level and the relative timing of the activity of groups of neurons. The brain-based device BBD learns to discriminate among multiple objects with shared visual features, and associated “target” objects with innately preferred auditory cues. Globally distributed neuronal circuits that correspond to distinct objects in the visual field of NOMAD 10 are activated. These circuits, which are constrained by a reentrant neuroanatomy and modulated by behavior and synaptic plasticity, result in successful discrimination of objects. The brain-based device BBD is moveable, in a rich real-world environment involving continual changes in the size and location of visual stimuli due to self-generated or autonomous, movement, and shows that reentrant connectivity and dynamic synchronization provide an effective mechanism for binding the features of visual objects so as to reorganize object features such as color, shape and motion while distinguishing distinct objects in the environment.
Owner:NEUROSCI RES FOUND

Artificial synaptic device based on photoelectric coupling memristor and modulation method of artificial synapse device

The invention discloses an artificial synaptic device based on a photoelectric coupling memristor and a modulation method of the artificial synaptic device. The artificial synaptic device comprises an upper electrode, a lower electrode and a functional material layer, wherein the functional material layer is arranged between the upper electrode and the lower electrode, the upper electrode, the functional material layer and the lower electrode jointly form a sandwich structure, the functional material layer is made of a material having a photoelectric effect, the lower electrode is a transparent conductive electrode, an electrical signal is input through the upper electrode and the lower electrode, and an optical signal is input through the transparent conductive electrode. In the artificial synaptic device provided by the invention, light is introduced as a control signal of the other end except the electrical signal, two control ends of the artificial synapse device are expanded to three ends, the artificial synaptic device can generate resistance change under an external optical excitation signal by the additionally-arranged end, the artificial synaptic device can be configured to be in a plurality of resistance states correspondingly by selection and control of intensity, frequency and optical pulse time of the optical excitation signal, and various synaptic plasticity functions are correspondingly achieved.
Owner:HUAZHONG UNIV OF SCI & TECH

Unit, device and method for simulating biological neuronal synapsis

The invention discloses a unit, a device and a method for simulating biological neuronal synapsis on the basis of chalcogenide compounds. The unit comprises a first electrode layer, a function material layer and a second electrode layer, wherein the first electrode layer receives first pulse signals, and the second electrode layer receives second pulse signals. A device can change electric conductance simulation synapsis weight changes according to input signals. When the difference value between the frequency of the first pulse signals and the frequency of the second pulse signals is plus or minus, the electric conductance is changed , and the simulation of the pulse frequency dependent synaptic plasticity function of the biological neuronal synapsis is realized. When the signal difference peak value between the first pulse signals and the second pulse signals is plus or minus, the electric conductance is changed, and the simulation of the pulse time dependent synaptic plasticity function of the biological neuronal synapsis is realized. The unit, the device and the method have the advantages that the basic function of the biological neuronal synapsis can be realized on single inorganic devices, the basic device forming the artificial neural network can be provided, and the effects of integration degree improvement and power consumption reduction can be obtained.
Owner:HUAZHONG UNIV OF SCI & TECH

Synaptic transistor based on two-dimensional semiconductor material and preparation method of synaptic transistor

The invention discloses a synaptic transistor based on a two-dimensional semiconductor material and a preparation method of the synaptic transistor. The synaptic transistor comprises an insulating substrate, and a channel, a source electrode, a drain electrode and a gate electrode which are arranged on the substrate, wherein the channel is a two-dimensional semiconductor material; the source electrode and the drain electrode are arranged at the two ends of the channel respectively and form an ohmic contact with the channel material; the gate electrode and an electrical interconnection system formed by the channel, the source electrode and the drain electrode are kept in electronic insulation; an organic electrolyte covers a channel region and most of the gate electrode and comprises an organic carrier capable of being electrically insulated and ions capable of being migrated, and effective ion control of the gate to the channel material is formed. According to the synaptic transistor based on the two-dimensional semiconductor material and the preparation method of the synaptic transistor, an ion attachment-intercalation mechanism is utilized, and the characteristics of large surface area and adjustable resistance value of the two-dimensional material are combined, so that the device shows long-term and short-term synaptic plasticity, and the two characteristics can change witheach other along with the change of a gate signal. Meanwhile, the device has good linearity and ultralow operational power consumption, and the implementation and large-scale integration application of a high-precision neuromorphic device are facilitated.
Owner:PEKING UNIV

Multi-brain area cooperative autonomous decision making method based on multi-modal fusion

The invention belongs to the cognitive nerve technology field and especially relates to a multi-brain area cooperative autonomous decision making method based on multi-modal fusion. Problems that thecost of an existing unmanned aerial vehicle obstacle avoidance technology is high; the technology is not flexible; and an existing reinforcement learning method requires a control object to have a high fault tolerance capability are solved. The multi-brain area cooperative autonomous decision making method based on multi-modal fusion comprises the following steps of acquiring the space position information of an obstacle and inputting into a multi-brain area cooperative reinforcement learning model which is constructed in advance; and according to the reward information fed back by an environment, through dopamine regulation and control and a synaptic plasticity mechanism, updating the multi-brain area cooperative reinforcement learning model, and realizing unmanned aerial vehicle autonomous obstacle avoidance. In the invention, the dangerous degree of the obstacle in a scene can be accurately assessed, a brain autonomous learning process is simulated, the unmanned aerial vehicle can rapidly and accurately learn an obstacle avoidance strategy, autonomous obstacle avoidance is realized and a task is completed.
Owner:INST OF AUTOMATION CHINESE ACAD OF SCI

Mobile brain-based device for use in a real world environment

A mobile brain-based device BBD includes a mobile base equipped with sensors and effectors (Neurally Organized Mobile Adaptive Device or NOMAD), which is guided by a simulated nervous system that is an analogue of cortical and sub-cortical areas of the brain required for visual processing, decision-making, reward, and motor responses. These simulated cortical and sub-cortical areas are reentrantly connected and each area contains neuronal units representing both the mean activity level and the relative timing of the activity of groups of neurons. The brain-based device BBD learns to discriminate among multiple objects with shared visual features, and associated “target” objects with innately preferred auditory cues. Globally distributed neuronal circuits that correspond to distinct objects in the visual field of NOMAD 10 are activated. These circuits, which are constrained by a reentrant neuroanatomy and modulated by behavior and synaptic plasticity, result in successful discrimination of objects. The brain-based device BBD is moveable, in a rich real-world environment involving continual changes in the size and location of visual stimuli due to self-generated or autonomous, movement, and shows that reentrant connectivity and dynamic synchronization provide an effective mechanism for binding the features of visual objects so as to reorganize object features such as color, shape and motion while distinguishing distinct objects in the environment.
Owner:NEUROSCI RES FOUND

Fault location method of distributed generation including power distribution network of synaptic plasticity based SNP system

The invention relates to a fault location method of a distributed generation including power distribution network of a synaptic plasticity based SNP system. The fault location method comprises the following steps of (1), selecting a power cut interval; (2), establishing a fault location model of the distributed generation including power distribution network of the synaptic plasticity based SNP system; (3), determining a fault section; according to fault information and a forward synaptic matrix which are read by the system, carrying out operation on the established fault location model; (4),verifying fault location accuracy; according to a fault location result obtained by a reasoning algorithm and the value of a sequential pulse train in a bidirectional functional neuron O, verifying the accuracy of the fault location result by combining an actual current matrix C and the reasoning algorithm; and (5), completing the fault location and the verification of the fault location accuracythrough a fault judgment standard and a fault current information verification standard. The fault location method of the distributed generation including power distribution network of the synaptic plasticity based SNP system, which is provided by the invention, has high accuracy and high reliability, and can be widely applied to the fault location of the distributed generation including power distribution network.
Owner:ELECTRIC POWER SCI & RES INST OF STATE GRID TIANJIN ELECTRIC POWER CO +2

Fast memory coding method and device based on multi-synaptic plasticity spiking neural network

The invention provides a fast memory coding method based on a multi-synaptic plasticity pulse neural network. The fast memory coding method comprises the steps of 1, converting external stimulation into an input pulse sequence based on a hierarchical coding strategy; 2, after the pulse neural network receives an input pulse, updating a membrane potential of neurons of an output layer based on an improved SRM model; 3, updating a synaptic weight input to an output layer by using a supervisory group Tempotron, and activating neuron memory input of the output layer; step 4, after the neurons of the output layer are activated, using the unsupervised STDP to update synaptic weights among the activated neurons in the layer, and forming an enhanced cyclic sub-network storage memory; and step 5, while executing the step 4, using unsupervised inhibition synaptic plasticity, updating a synaptic weight between an inhibition layer and an output layer, and inhibiting separation of distribution time of neural populations with different inputs of feedback guarantee memories. The invention further provides a fast memory coding device based on the multi-synaptic plastic spiking neural network. According to the invention, the coding speed and stability of memory are effectively improved.
Owner:ZHEJIANG LAB +1

Glial-like cell neuromorphic device and preparation method thereof

The invention discloses a glial-like cell neuromorphic device and a preparation method thereof. The device includes an insulating substrate and a bottom electrode, a resistive layer, a dielectric layer and a top electrode located on the substrate. The bottom electrode is located on the insulating substrate, the dielectric layer is located on the bottom electrode, a hole structure is subjected to graphic etching in the dielectric layer, and the bottom portion of the hole is exposed out of the bottom electrode; the resistive layer covers the bottom portion and the side wall of the hole and coatsthe dielectric layer around the hole; the top electrode is located on the resistive layer; the resistive layer and the dielectric layer are semiconductor materials, the ionic mobility or the ionic concentration in the resistive layer is different from that of the dielectric layer, and the thickness of the dielectric layer is larger than that of the resistive layer. The voltage is applied to the top electrode and the bottom electrode to change the electric field intensity distribution in the dielectric layer and the resistive layer and generate interaction of ions of the dielectric layer and the resistive layer so as to influence the formation and fusing kinetics of conductive fine wires in the resistive layer and effectively simulate the influence of synaptic surroundings on synaptic plasticity.
Owner:PEKING UNIV

Calculation method of neural synaptic plasticity based on calcium concentration

The invention relates to a calculation method of neural synaptic plasticity based on calcium concentration, which relates to the field of brain simulation, in particular to the calculation problem ofneural synaptic plasticity of impulse neural network in brain simulation. The first is the calculation of calcium ion concentration. According to the membrane potential values of presynaptic neurons and postsynaptic neurons at the initial time t0 and the initial connecting weight w0 of synapses, the calcium ion concentrations in dendrites and spines at the next time t1 are calculated respectivelyfor the synapses that need to be calculated. Secondly, according to the calcium ion concentration in dendritic spine, the direction of weight change was obtained by comparing with the calcium ion concentration threshold Ca0s and Ca1s. According to the synaptic state tag Tag and the plasticity related protein PRP concentration, the change of synaptic weight was calculated, and the new weight at time t1 was obtained. the above procedure is repeated to calculate the strength of synaptic connections within the simulation time. The method of the invention is applied to constructing a brain-like neural network, completing the simulation of the learning and memory process required by the brain-like intelligence, realizing the universal strong artificial intelligence, and is applied to intelligentmedia, medical treatment and the like.
Owner:COMMUNICATION UNIVERSITY OF CHINA
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