Glial-like cell neuromorphic device and preparation method thereof

A glial cell and neuromorphic technology, applied in electrical components and other directions, to achieve the effect of low power consumption and high degree of bionics

Active Publication Date: 2019-04-05
PEKING UNIV
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

However, in the current research process of neuromorphic devices, everyone only focuses on the biological synapse itself and the cumul...

Method used

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  • Glial-like cell neuromorphic device and preparation method thereof
  • Glial-like cell neuromorphic device and preparation method thereof
  • Glial-like cell neuromorphic device and preparation method thereof

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Embodiment Construction

[0042] The present invention will be further elaborated below through specific embodiments in conjunction with the accompanying drawings.

[0043] Here, in order to successfully simulate the role of glial cells in organisms, that is, to demonstrate the practicability of glial cell-like neuromorphic devices, we selected two dielectric layers with different ion mobility to prepare devices. By comparison, To demonstrate the effect of the dielectric layer on the performance of glial cell-like neuromorphic devices.

[0044] The structure of the glial cell-like neuromorphic device prepared in this example is as follows: Figure 5 As shown, it includes: a substrate, a bottom electrode 3, a dielectric layer 4, a resistive layer 5, and a top electrode 6; wherein, the pattern of the bottom electrode 3 is defined on the substrate; the dielectric layer 4 is grown after peeling off the photoresist; Engraving and etching to form the through hole of the resistive switch layer, growing the r...

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Abstract

The invention discloses a glial-like cell neuromorphic device and a preparation method thereof. The device includes an insulating substrate and a bottom electrode, a resistive layer, a dielectric layer and a top electrode located on the substrate. The bottom electrode is located on the insulating substrate, the dielectric layer is located on the bottom electrode, a hole structure is subjected to graphic etching in the dielectric layer, and the bottom portion of the hole is exposed out of the bottom electrode; the resistive layer covers the bottom portion and the side wall of the hole and coatsthe dielectric layer around the hole; the top electrode is located on the resistive layer; the resistive layer and the dielectric layer are semiconductor materials, the ionic mobility or the ionic concentration in the resistive layer is different from that of the dielectric layer, and the thickness of the dielectric layer is larger than that of the resistive layer. The voltage is applied to the top electrode and the bottom electrode to change the electric field intensity distribution in the dielectric layer and the resistive layer and generate interaction of ions of the dielectric layer and the resistive layer so as to influence the formation and fusing kinetics of conductive fine wires in the resistive layer and effectively simulate the influence of synaptic surroundings on synaptic plasticity.

Description

technical field [0001] The invention belongs to the field of semiconductors and bionics, and relates to a neuromorphic device, in particular to a glial cell-like neuromorphic device and a preparation method thereof. Background technique [0002] With the advent of the era of big data, the problems of low computing efficiency and high power consumption of the computer are becoming more and more serious due to the characteristics of the traditional Von Neumann architecture, such as independent memory and computing modules and sequential computing. To solve this problem, neuromorphic computing, which simulates the computing architecture of the human brain, has attracted widespread attention. Therefore, the neuromorphic device, which is the most basic unit of neuromorphic computing, has also become a hot research topic. The current research on neuromorphic devices mainly focuses on artificial synaptic devices and neuron devices. [0003] Neuron devices, as the name implies, si...

Claims

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Application Information

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IPC IPC(8): H01L45/00
CPCH10N70/24H10N70/821H10N70/011
Inventor 杨玉超程彩蝶黄如
Owner PEKING UNIV
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